JPS63136685A - Semiconductor laser device - Google Patents
Semiconductor laser deviceInfo
- Publication number
- JPS63136685A JPS63136685A JP28350486A JP28350486A JPS63136685A JP S63136685 A JPS63136685 A JP S63136685A JP 28350486 A JP28350486 A JP 28350486A JP 28350486 A JP28350486 A JP 28350486A JP S63136685 A JPS63136685 A JP S63136685A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor laser
- substrate
- laser element
- marker
- stripe electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 70
- 239000000758 substrate Substances 0.000 claims abstract description 46
- 239000003550 marker Substances 0.000 claims abstract description 22
- 238000012544 monitoring process Methods 0.000 abstract description 6
- 230000003287 optical effect Effects 0.000 description 5
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- 238000005253 cladding Methods 0.000 description 3
- 241000282326 Felis catus Species 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
Landscapes
- Semiconductor Lasers (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体レーザ装置に係り、特に半導体レーザ素
子の基板への取付けに関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a semiconductor laser device, and more particularly to attachment of a semiconductor laser element to a substrate.
本発明は活性領域上のキャップ層にテーパ状キャビティ
を形成してストライプ電極とした半導体レーザ素子を基
板上に配設し、該半導体レーザ素子の近傍に受光素子を
配設し、この半導体レーザ素子の近傍に受光素子を設け
た半導体レーザ装置に於いて、基板上に半導体レーザ素
子の取付位置を定めるマーカを付して、半導体レーザ素
子のストライプ電極の形成された面と反対側の面が基板
に接触するようにして、基板上のマーカと半導体レーザ
素子のストライプ電極を位置合せして配置することで、
半導体レーザ素子の発光点位置を正確に位置決め出来る
様にしたものである。In the present invention, a semiconductor laser element is provided on a substrate with a tapered cavity formed in a cap layer above an active region to form a striped electrode, a light receiving element is provided near the semiconductor laser element, and the semiconductor laser element is In a semiconductor laser device in which a light-receiving element is provided near the substrate, a marker is attached on the substrate to determine the mounting position of the semiconductor laser element, and the surface opposite to the surface on which the stripe electrode of the semiconductor laser element is formed is located on the substrate. By aligning and arranging the marker on the substrate and the stripe electrode of the semiconductor laser element so that they are in contact with the
The light emitting point position of the semiconductor laser element can be accurately positioned.
従来の半導体レーザ装置は、第５図に示す如く構成させ
ていた。即ち、第５図でキャップベース（１１にはアウ
タリード（２）を有し、このリード（２）は半導体レー
ザ素子（３）とＰＩＮダイオード等からなる受光素子（
４）への入出力端子となるものである。キャツブベース
（１）上にはモニタ用の受光素子（４）が配設され、こ
の受光素子（４）の近傍に半導体レーザ素子（３）を配
設した基板（５）を植立し、半導体レーザ素子（３）か
らディスクへ放射するレーザ光とは反文・ｉ側から放出
されるレーザ光をモニタ用の受光素子（４）が受光する
。これら半導体レーザ素子（３）を含む基板（５）と受
光素子（４）はキャンプ（６）で覆われ、キャップ（６
）の上面にはウィンドガラス（７）が嵌め込まれている
。A conventional semiconductor laser device was constructed as shown in FIG. That is, in FIG. 5, the cap base (11) has an outer lead (2), and this lead (2) is connected to a light receiving element (2) consisting of a semiconductor laser element (3) and a PIN diode.
4) serves as an input/output terminal. A light receiving element (4) for monitoring is arranged on the cat base (1), and a substrate (5) on which a semiconductor laser element (3) is arranged is planted near this light receiving element (4). The light receiving element (4) for monitoring receives the laser light emitted from the i side, which is the opposite of the laser light emitted from the element (3) to the disk. The substrate (5) containing these semiconductor laser elements (3) and the light receiving element (4) are covered with a camp (6) and a cap (6).
) is fitted with a window glass (7).
基板（５）上に配設する半導体レーザ素子（３）として
は種々の構成のものをとり得るが、特に、第６図に示す
如（、レーザ活性領域上のキャップＦ！（３ｅ）にテー
パ状キャビティを形成してストライプ電極（３ｇ）とし
たものを用いる。即ち、第６図で半導体レーザ素子（３
）の半導体基板（３ａ）は、例えば、ｎ型のＧａＡｓ
（ガリウムひ素）よりなり、この半導体基板（３ａ）上
にクランド層（３ｂ）としてｎ型の八ｊ！、Ｇａ１−．
Ａ：（アルミニウム、ガリウムひ素）を、更に、この
クラッド層（３ｂ）上に活性Ｎ（３ｃ）としてｐ型の７
４１！ ｙ Ｇａ ＋ −ｙ ”を形成し、活性層（３
ｃ）上にｐ型のＡ ｌ ｘ Ｇａ１−ｘ Ａｓからなる
クラッドＪ！ （３ｄ）を積層し、クラッド１ｍ （３
ｄ）上にはｐ型のＧａＡｓからなるキャンプＮ （３ｅ
）及び絶縁層（３ｆ）を設けて、このキャップ層（３ｅ
）と絶縁層（３ｆ）にテーバストライプからなるキャビ
ティを形成してストライブ電極（３ｇ）とすることで、
低雑音のマルチモードを維持しつつ、単峰性の遠視野像
が得られる半導体レーザ素子り３）を得ている。The semiconductor laser element (3) disposed on the substrate (5) can have various configurations, but in particular, as shown in FIG. A stripe electrode (3g) formed by forming a shaped cavity is used.In other words, as shown in FIG.
), the semiconductor substrate (3a) is, for example, n-type GaAs.
(gallium arsenide), and an n-type 8j! , Ga1-.
A: (aluminum, gallium arsenide) is further applied as active N (3c) on this cladding layer (3b) to form a p-type 7
41! y Ga + −y” and the active layer (3
c) Cladding J! consisting of p-type Al x Ga1-x As on top! (3d) is laminated, cladding 1m (3
d) On top is a camp N made of p-type GaAs (3e
) and an insulating layer (3f), and this cap layer (3e
) and the insulating layer (3f) to form a cavity consisting of a Taber stripe to form a striped electrode (3g),
A semiconductor laser device 3) that can obtain a single-peak far-field pattern while maintaining a low-noise multi-mode pattern has been obtained.
上述の第５図に示す半導体レーザ装置における基板（５
）上の半導体レーザ素子（３）と受光素子（４）との相
対関係を拡大して示すと、第７図の如くなる。The substrate (5) in the semiconductor laser device shown in FIG.
FIG. 7 shows an enlarged view of the relative relationship between the semiconductor laser element (3) and the light-receiving element (4) above.
一般的には半導体レーザ素子（３）を基板（５）上に配
置する場合には、活性１（３ｃ）からのレーザ発光を考
慮して、活性層（３ｃ）側の面、即ちテーパ状キャビテ
ィのあるストライブ電極（３ｇ）側を基板（５）と接す
る様にしたアンプサイド−ダウン或はジャンクション−
ダウン構造を採っている。Generally, when a semiconductor laser element (3) is placed on a substrate (5), the surface on the active layer (3c) side, that is, the tapered cavity, is Amplifier side - down or junction - with the stripe electrode (3g) side in contact with the substrate (5)
It has a down structure.
この為に半導体レーザ素子（３）の発光点（８）の位置
決めを基板（５）に対して行う場合には３００μ−×２
５０μ鋼の寸法を有する半導体レーザ素子（３）の外形
を基準として行なうことになる。この為にキャップ（６
）内に組み込んだ場合の発光点（８）の軸ずれは数１０
μ−の誤差を含むことになる。この結果、精密な光学系
を設定しても光源となる半導体レーザ装置の光源位置が
不正確となって全体の精度は上らずに光学系を組み立て
た後に光学ヘッドでは位置調整を行なわなければならな
い欠点があった。For this reason, when positioning the light emitting point (8) of the semiconductor laser element (3) with respect to the substrate (5), 300μ-×2
The measurement will be performed based on the outer shape of the semiconductor laser element (3) having dimensions of 50μ steel. For this purpose, use a cap (6
), the axis misalignment of the light emitting point (8) is several 10
This includes an error of μ−. As a result, even if a precise optical system is set up, the light source position of the semiconductor laser device that serves as the light source becomes inaccurate, and the overall accuracy does not improve, and the position of the optical head must be adjusted after the optical system is assembled. There were some drawbacks.
を問題点を解決するための手段〕
本発明は活性領域上のキャンプ層（３ｄ）にテーパ状キ
ャビティを形成してストライブ電極（３ｇ）とした半導
体レーザ素子（３）を基板（５）上に配設し、半導体レ
ーザ素子（３）の近傍に受光素子（４）を設けた半導体
レーザ装置に於いて、基板（５）上に半導体レーザ素子
（３）の取付位置を定めるマーカ１９）、 ０１． Ｑ
ａ、 Ｑ９を付し、半導体レーザ素子（３）のストライ
ブ電極（３ｇ）の形成された面と反対側の面が基板（５
）に接触するようニシテ、基板（５）上（７）？−力＋
９１．０１． Ｑ４１． （＋９と半導体レーザ素子の
ストライブ電極（３ｇ）とを位置合せする様にしたもの
である。[Means for Solving the Problem] The present invention provides a semiconductor laser device (3) with a striped electrode (3g) formed by forming a tapered cavity in a camp layer (3d) on an active region on a substrate (5). In a semiconductor laser device in which a light-receiving element (4) is provided in the vicinity of a semiconductor laser element (3), a marker 19) that determines the mounting position of the semiconductor laser element (3) on the substrate (5); 01. Q
a, Q9 is attached, and the surface opposite to the surface on which the stripe electrode (3g) of the semiconductor laser element (3) is formed is the substrate (5).
) on the board (5) (7)? -force+
91.01. Q41. (+9 and the stripe electrode (3g) of the semiconductor laser element are aligned.
本発明の半導体レーザ装置は基板に設けたマーカと半導
体レーザ素子のストライブ電極とを位置合せするために
半導体レーザ素子の発光点位置精度を数μ園又はそれ以
下のオーダの設定が可能となる。In the semiconductor laser device of the present invention, in order to align the marker provided on the substrate and the stripe electrode of the semiconductor laser element, it is possible to set the light emitting point position accuracy of the semiconductor laser element to an order of several micrometers or less. .
〔実施例〕
以下、本発明による半導体レーザ装置の一実施例を第１
図について説明する。第１図は第７図と同様に半導体□
レーザ装置の基板（５）上に配設した半導体レーザ素子
（３）と受光素子（４）とを併設した場合の拡大斜視図
を示すものであり、基板（５）上には半導体レーザ素子
（３）を位置決めするためのマーカ（９）。[Example] Hereinafter, a first example of a semiconductor laser device according to the present invention will be described.
The diagram will be explained. Figure 1 is a semiconductor □ similar to Figure 7.
This figure shows an enlarged perspective view of a laser device in which a semiconductor laser element (3) and a light receiving element (4) are arranged on a substrate (5). 3) Marker (9) for positioning.
αｅが刻設又は印刷等で形成されている。モニタ用の受
光素子（４）はディスクヘレーザ光を放出する発光点（
８）を有する面とは反対側の基板（５）上に配設される
。半導体レーザ素子（３）は活性１ｉ（３ｃ）が形成さ
れている側の面、即ち、ストライプ電極（３ｇ）を上側
にし、半導体基板（３ａ）側を基板（５）側に接触させ
て、配置し、三つの三角印で示すマーカ（９）の頂点を
半導体レーザ素子（３ｇ）の臂開面Ｑｌ）の下端線αの
に合せると共に、三つの三角印の真中のマーカ（９）及
び受光素子（４）側に形成したマーカＯｍがストライプ
電極（３ｇ）のライン上にある様に調整して基板（５）
上に固定させる様になされている。αe is formed by engraving or printing. The light receiving element (4) for monitoring is a light emitting point (4) that emits laser light to the disk.
8) on the opposite side of the substrate (5). The semiconductor laser element (3) is arranged with the surface on which the active layer 1i (3c) is formed, that is, the stripe electrode (3g) facing upward, and the semiconductor substrate (3a) side in contact with the substrate (5) side. Then, align the apex of the marker (9) indicated by the three triangular marks with the lower end line α of the arm opening surface Ql of the semiconductor laser element (3g), and place the marker (9) in the middle of the three triangular marks and the light receiving element. Adjust so that the marker Om formed on the (4) side is on the line of the stripe electrode (3g), and then move the substrate (5).
It is designed to be fixed at the top.
第２図は本発明の半導体レーザ素子の取付けを示す他の
実施例を示すものであり、基板（５）上にはモニタ用の
受光素子（４）が一体に形成され、半導体レーザ素子（
３）からのモニタ用レーザ光を基板平面内で受光する様
になされている。マーカ（９１，Ｑｌの配置は第１図と
同様である。FIG. 2 shows another embodiment of the mounting of the semiconductor laser element of the present invention, in which a light receiving element (4) for monitoring is integrally formed on the substrate (5), and the semiconductor laser element (
The monitor laser beam from 3) is received within the plane of the substrate. The arrangement of markers (91, Ql) is the same as in FIG.
第３図は本発明の半導体レーザ素子の取付けを示す更に
他の実施例を示すものであり、基板（５）上には第２図
に示すと同様にモニタ用の受光素子（４）とディスクへ
放射したレーザの戻り光を検出するための検出用のＰＩ
Ｎダイオードの如き受光素子０３を３分割して２組設け
たもので、半導体レーザ素子（３）を取付ける位置は基
板（５）の略真中で、この位置にマーカＴ’ｌｌｌ、
Ｑｌが形成され、第１図と同様の位置合セを行なった後
に基板（５）上に半導体レーザ素子（３）が固定される
。FIG. 3 shows still another embodiment showing the mounting of the semiconductor laser element of the present invention, in which a light receiving element (4) for monitoring and a disk are mounted on the substrate (5) in the same way as shown in FIG. A detection PI for detecting the return light of the laser emitted to the
The light-receiving element 03, such as an N diode, is divided into three parts and two sets are provided.The position where the semiconductor laser element (3) is installed is approximately in the center of the substrate (5), and a marker T'llll is placed at this position.
After Ql is formed and the same alignment as shown in FIG. 1 is performed, the semiconductor laser element (3) is fixed on the substrate (5).
上述の各実施例ではマーカ（９）、α〔を三角形状に形
成したが、マーキングの他の実施例を第４図Ａ。In each of the embodiments described above, the markers (9) and α were formed in a triangular shape, but another embodiment of the marking is shown in FIG. 4A.
Ｂに示す、第４図Ａ、 Ｂは受光素子（＾）の形成され
た基板（５）の上に半導体レーザ素子を配設した場合の
平面図であり、第４図Ａの場合は基板（５）の長手方向
に線状のマーカ■を三本形成し、真中の線状マーカと半
導体レーザ素子（３）のストライプ電極（３ｇ）のライ
ンが同一となる様に合せ、三本の上下の線状のマーカα
船、圓間の間隔を例えば半導体レーザ素子（３）の臂開
面αＤの長さし、に等しく取って、半導体レーザ素子（
３）の上下壁を合せる様に固定させている。4A and 4B are plan views when a semiconductor laser element is disposed on a substrate (5) on which a light receiving element (^) is formed, and in the case of FIG. 4A, the substrate (5) is 5) Form three linear markers ■ in the longitudinal direction, align the middle linear marker so that the lines of the stripe electrode (3g) of the semiconductor laser element (3) are the same, and linear marker α
For example, the distance between the circles is set equal to the length of the arm opening αD of the semiconductor laser device (3),
3) are fixed so that the top and bottom walls are aligned.
第４図Ｂに示すものは基板（５）の幅方向に半導体レー
ザ素子（３）の奥行き方向の長さＬ２と等しく二本の線
状のマーカα９を形成し、発光点を合すための三角形マ
ーカ（９）、Ｑｌを線状のマーカ０！９の中心に設ける
様にしたものである。The one shown in FIG. 4B has two linear markers α9 equal to the length L2 in the depth direction of the semiconductor laser element (3) in the width direction of the substrate (5), and is used to align the light emitting points. A triangular marker (9), Ql, is provided at the center of the linear marker 0!9.
上述においては、本発明の各実施例を説明したが、本発
明はこれらに限られるものではなく、その他種々の変形
が可能である。Although each embodiment of the present invention has been described above, the present invention is not limited to these, and various other modifications are possible.
本発明は叙上の様に構成させたので、従来の半導体レー
ザ素子（３）の発光点（８）位置を基板（５）の所定位
置に合せるための取付精度が１０μｍであったものが、
ストライプ電極（３ｇ）位置は活性Ｊｉｉ（３ｃ）の発
光点（８）の真上にある関係から、数μ霧又はそれ以下
の取付精度で半導体レーザ素子（３）を基板（５）に取
付けることが出来た。更にレーザ出射光の方向を０．１
度のオーダで設定可能となり、精密な光学系との組合せ
で組立後の調整が不要な光学ラドが構成可能である。Since the present invention is configured as described above, the mounting accuracy for aligning the light emitting point (8) position of the semiconductor laser element (3) with a predetermined position on the substrate (5) was 10 μm in the conventional method.
Since the stripe electrode (3g) is located directly above the light emitting point (8) of the active Jii (3c), the semiconductor laser element (3) can be mounted on the substrate (5) with a mounting accuracy of several μm or less. was completed. Furthermore, the direction of the laser emitted light is set to 0.1
Settings can be made on the order of degrees, and in combination with a precise optical system, it is possible to construct an optical rad that does not require adjustment after assembly.
本発明の半導体レーザ装置によればレーザ発光点の基板
に対する取付精度を数μｍのオーダに向上させることが
出来て、レーザ出射光の方向角度を０．１度のオーダで
設定できる特長を有する。According to the semiconductor laser device of the present invention, it is possible to improve the mounting precision of the laser emitting point to the substrate on the order of several μm, and the directional angle of the laser emitted light can be set on the order of 0.1 degree.
第１図は本発明の半導体レーザ素子取付状態の一実施例
を示す拡大斜視図、第２図は本発明の半導体レーザ素子
取付状態の他の実施例を示す拡大斜視図、第３図は本発
明の半導体レーザ素子取付状態の更に他の実施例を示す
拡大斜視図、第４図Ａ、Ｂは本発明のマーカの他の実施
例を示す基板の平面図、第５図は従来の半導体レーザ装
置の一部を切り欠いた斜視図、第６図は従来の半導体レ
ーザ素子の模式的斜視図、第７図は従来の半導体レーザ
素子の取付状態を示す拡大斜視図である。
（１）はキャップペース、（３）は半導体レーザ素子、
（３ｇ）はストライプ電極、（４）は受光素子、（５）
は基板、＋９１．Ｑ呻、α０．ａ９はマーカである。FIG. 1 is an enlarged perspective view showing one embodiment of the semiconductor laser device according to the present invention in a state in which it is attached, FIG. 2 is an enlarged perspective view showing another embodiment in which the semiconductor laser device in accordance with the present invention is mounted, and FIG. 4A and 4B are plan views of a substrate showing other embodiments of the marker of the present invention, and FIG. 5 is a conventional semiconductor laser. FIG. 6 is a schematic perspective view of a conventional semiconductor laser device, and FIG. 7 is an enlarged perspective view showing how the conventional semiconductor laser device is mounted. (1) is a cap paste, (3) is a semiconductor laser element,
(3g) is a stripe electrode, (4) is a light receiving element, (5)
is the board, +91. Q groan, α0. a9 is a marker.
Claims (1)
てストライプ電極とした半導体レーザ素子を基板上に配
設し、該半導体レーザ素子の近傍に受光素子を設けた半
導体レーザ装置に於いて、上記基板上に半導体レーザ素
子の取付位置を定めるマーカを付して成り、 上記半導体レーザ素子の上記ストライプ電極の形成され
た面と反対側の面が上記基板に接触するようにして、 上記基板上のマーカと半導体レーザ素子のストライプ電
極とが位置合せして配置されて成ることを特徴とする半
導体レーザ装置。[Scope of Claims] A semiconductor laser device in which a semiconductor laser element is provided on a substrate with a tapered cavity formed in a cap layer above an active region to serve as a stripe electrode, and a light receiving element is provided in the vicinity of the semiconductor laser element. A marker is attached on the substrate to determine the mounting position of the semiconductor laser element, and the surface of the semiconductor laser element opposite to the surface on which the stripe electrode is formed is in contact with the substrate. , A semiconductor laser device characterized in that the marker on the substrate and the stripe electrode of the semiconductor laser element are aligned and arranged.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61283504A JP2513198B2 (en) | 1986-11-28 | 1986-11-28 | Semiconductor laser device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61283504A JP2513198B2 (en) | 1986-11-28 | 1986-11-28 | Semiconductor laser device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63136685A true JPS63136685A (en) | 1988-06-08 |
| JP2513198B2 JP2513198B2 (en) | 1996-07-03 |
Family
ID=17666404
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61283504A Expired - Fee Related JP2513198B2 (en) | 1986-11-28 | 1986-11-28 | Semiconductor laser device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2513198B2 (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6170781A (en) * | 1984-09-13 | 1986-04-11 | Fujitsu Ltd | Semiconductor laser and manufacture thereof |
| JPS61127661U (en) * | 1985-01-30 | 1986-08-11 |
-
1986
- 1986-11-28 JP JP61283504A patent/JP2513198B2/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6170781A (en) * | 1984-09-13 | 1986-04-11 | Fujitsu Ltd | Semiconductor laser and manufacture thereof |
| JPS61127661U (en) * | 1985-01-30 | 1986-08-11 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2513198B2 (en) | 1996-07-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5414787A (en) | Coupling structure between optical semiconductor and optical waveguide, and coupling method of the same | |
| CA2100115C (en) | Method for producing a semiconductor light emitting device | |
| US4768199A (en) | Mechanism for self-adjusting positioning of a semiconductor laser relative to an optical fiber to be coupled thereto | |
| US5124281A (en) | Method of fabricating a photonics module comprising a spherical lens | |
| US5181216A (en) | Photonics module apparatus | |
| US5357536A (en) | Method and apparatus for the positioning of laser diodes | |
| US5659566A (en) | Semiconductor laser module and method of assembling semiconductor laser module | |
| US20020039805A1 (en) | Method for manufacturing laser diode chip, optical transmitting/receiving module and method for aligning positions thereof | |
| JP2006039563A (en) | Optoelectronic assembly with coupling mechanism for alignment | |
| EP0984533A3 (en) | Positioning and mounting method of a semiconductor laser diode chip | |
| JPS63136685A (en) | Semiconductor laser device | |
| JP2002357748A (en) | Light path converting reflective body, mounting structure thereof and optical module | |
| US6377385B1 (en) | Optical module and optical element configuring the optical module | |
| US7517158B2 (en) | Method for manufacturing an optical module | |
| CN114144950A (en) | Semiconductor laser device | |
| JP2005017684A (en) | Optical module and method for manufacturing the same | |
| US6999494B2 (en) | Packaging and passive alignment of microlens and molded receptacle | |
| JPS6218722A (en) | Semiconductor device | |
| JPH0339706A (en) | Optical module | |
| US20030053763A1 (en) | Optical module and method of producing the optical module | |
| JPH04280487A (en) | Semiconductor laser equipment | |
| US6922425B2 (en) | Semiconductor laser device and optical pickup device | |
| JPH06160676A (en) | Manufacture of semiconductor laser module | |
| JPS62140484A (en) | Optical semiconductor device | |
| JPS6381988A (en) | Opto-electronic device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |