JPS63135975U - - Google Patents
Info
- Publication number
- JPS63135975U JPS63135975U JP2908887U JP2908887U JPS63135975U JP S63135975 U JPS63135975 U JP S63135975U JP 2908887 U JP2908887 U JP 2908887U JP 2908887 U JP2908887 U JP 2908887U JP S63135975 U JPS63135975 U JP S63135975U
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- crucible
- melt
- raw materials
- growth apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 claims description 10
- 238000005192 partition Methods 0.000 claims description 5
- 239000002994 raw material Substances 0.000 claims description 5
- 230000005855 radiation Effects 0.000 claims description 3
- 239000000155 melt Substances 0.000 claims 5
- 238000010438 heat treatment Methods 0.000 claims 1
- 230000008018 melting Effects 0.000 claims 1
- 238000002844 melting Methods 0.000 claims 1
- 238000009413 insulation Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2908887U JPH0523580Y2 (US08177716-20120515-C00003.png) | 1987-02-27 | 1987-02-27 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2908887U JPH0523580Y2 (US08177716-20120515-C00003.png) | 1987-02-27 | 1987-02-27 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63135975U true JPS63135975U (US08177716-20120515-C00003.png) | 1988-09-07 |
| JPH0523580Y2 JPH0523580Y2 (US08177716-20120515-C00003.png) | 1993-06-16 |
Family
ID=30832657
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2908887U Expired - Lifetime JPH0523580Y2 (US08177716-20120515-C00003.png) | 1987-02-27 | 1987-02-27 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0523580Y2 (US08177716-20120515-C00003.png) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1991013192A1 (en) * | 1990-03-02 | 1991-09-05 | Nkk Corporation | Single crystal production apparatus |
| JPH05105578A (ja) * | 1991-10-17 | 1993-04-27 | Shin Etsu Handotai Co Ltd | 単結晶引上装置 |
| JPH05163095A (ja) * | 1991-12-12 | 1993-06-29 | Shin Etsu Handotai Co Ltd | 単結晶引上装置 |
| WO2023007830A1 (ja) * | 2021-07-30 | 2023-02-02 | グローバルウェーハズ・ジャパン株式会社 | シリコン単結晶の製造方法及び単結晶引上装置 |
-
1987
- 1987-02-27 JP JP2908887U patent/JPH0523580Y2/ja not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1991013192A1 (en) * | 1990-03-02 | 1991-09-05 | Nkk Corporation | Single crystal production apparatus |
| JPH05105578A (ja) * | 1991-10-17 | 1993-04-27 | Shin Etsu Handotai Co Ltd | 単結晶引上装置 |
| JPH05163095A (ja) * | 1991-12-12 | 1993-06-29 | Shin Etsu Handotai Co Ltd | 単結晶引上装置 |
| WO2023007830A1 (ja) * | 2021-07-30 | 2023-02-02 | グローバルウェーハズ・ジャパン株式会社 | シリコン単結晶の製造方法及び単結晶引上装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0523580Y2 (US08177716-20120515-C00003.png) | 1993-06-16 |
