JPS63128760U - - Google Patents
Info
- Publication number
- JPS63128760U JPS63128760U JP1965987U JP1965987U JPS63128760U JP S63128760 U JPS63128760 U JP S63128760U JP 1965987 U JP1965987 U JP 1965987U JP 1965987 U JP1965987 U JP 1965987U JP S63128760 U JPS63128760 U JP S63128760U
- Authority
- JP
- Japan
- Prior art keywords
- conductive foil
- solder reservoir
- board body
- soldering
- reservoir conductive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Structure Of Printed Boards (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1965987U JPH0537494Y2 (enExample) | 1987-02-13 | 1987-02-13 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1965987U JPH0537494Y2 (enExample) | 1987-02-13 | 1987-02-13 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63128760U true JPS63128760U (enExample) | 1988-08-23 |
| JPH0537494Y2 JPH0537494Y2 (enExample) | 1993-09-22 |
Family
ID=30814456
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1965987U Expired - Lifetime JPH0537494Y2 (enExample) | 1987-02-13 | 1987-02-13 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0537494Y2 (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7109548B2 (en) | 1997-07-29 | 2006-09-19 | Micron Technology, Inc. | Operating a memory device |
| US7141824B2 (en) | 1997-07-29 | 2006-11-28 | Micron Technology, Inc. | Transistor with variable electron affinity gate |
-
1987
- 1987-02-13 JP JP1965987U patent/JPH0537494Y2/ja not_active Expired - Lifetime
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7109548B2 (en) | 1997-07-29 | 2006-09-19 | Micron Technology, Inc. | Operating a memory device |
| US7141824B2 (en) | 1997-07-29 | 2006-11-28 | Micron Technology, Inc. | Transistor with variable electron affinity gate |
| US7154153B1 (en) | 1997-07-29 | 2006-12-26 | Micron Technology, Inc. | Memory device |
| US7169666B2 (en) | 1997-07-29 | 2007-01-30 | Micron Technology, Inc. | Method of forming a device having a gate with a selected electron affinity |
| US7242049B2 (en) | 1997-07-29 | 2007-07-10 | Micron Technology, Inc. | Memory device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0537494Y2 (enExample) | 1993-09-22 |