JPS6312665A - Semiconductive resin composition - Google Patents
Semiconductive resin compositionInfo
- Publication number
- JPS6312665A JPS6312665A JP15657486A JP15657486A JPS6312665A JP S6312665 A JPS6312665 A JP S6312665A JP 15657486 A JP15657486 A JP 15657486A JP 15657486 A JP15657486 A JP 15657486A JP S6312665 A JPS6312665 A JP S6312665A
- Authority
- JP
- Japan
- Prior art keywords
- resin composition
- specific resistance
- conductivity
- resistance value
- semiconductive resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011342 resin composition Substances 0.000 title claims description 26
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 19
- 239000011256 inorganic filler Substances 0.000 claims abstract description 12
- 229910003475 inorganic filler Inorganic materials 0.000 claims abstract description 12
- 239000006229 carbon black Substances 0.000 claims abstract description 10
- 229920000620 organic polymer Polymers 0.000 claims abstract description 9
- 229920000573 polyethylene Polymers 0.000 claims abstract description 6
- 239000003607 modifier Substances 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 8
- -1 polyethylene Polymers 0.000 abstract description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 6
- 238000010438 heat treatment Methods 0.000 abstract description 6
- 239000000203 mixture Substances 0.000 abstract description 6
- 239000004698 Polyethylene Substances 0.000 abstract description 5
- 239000000377 silicon dioxide Substances 0.000 abstract description 4
- 239000004743 Polypropylene Substances 0.000 abstract description 2
- 230000001747 exhibiting effect Effects 0.000 abstract description 2
- 230000020169 heat generation Effects 0.000 abstract description 2
- 239000010445 mica Substances 0.000 abstract description 2
- 229910052618 mica group Inorganic materials 0.000 abstract description 2
- 229920001155 polypropylene Polymers 0.000 abstract description 2
- 239000000654 additive Substances 0.000 abstract 1
- 239000006231 channel black Substances 0.000 abstract 1
- 238000013329 compounding Methods 0.000 abstract 1
- 239000006234 thermal black Substances 0.000 abstract 1
- 229920000642 polymer Polymers 0.000 description 7
- 230000005484 gravity Effects 0.000 description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 239000000945 filler Substances 0.000 description 4
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 3
- 239000005977 Ethylene Substances 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- 239000004952 Polyamide Substances 0.000 description 2
- 239000006230 acetylene black Substances 0.000 description 2
- TZCXTZWJZNENPQ-UHFFFAOYSA-L barium sulfate Chemical compound [Ba+2].[O-]S([O-])(=O)=O TZCXTZWJZNENPQ-UHFFFAOYSA-L 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229920001179 medium density polyethylene Polymers 0.000 description 2
- 239000004701 medium-density polyethylene Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 229920002647 polyamide Polymers 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- HJIAMFHSAAEUKR-UHFFFAOYSA-N (2-hydroxyphenyl)-phenylmethanone Chemical compound OC1=CC=CC=C1C(=O)C1=CC=CC=C1 HJIAMFHSAAEUKR-UHFFFAOYSA-N 0.000 description 1
- 229920000089 Cyclic olefin copolymer Polymers 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000003712 anti-aging effect Effects 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000004927 clay Substances 0.000 description 1
- 229910052570 clay Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- HQQADJVZYDDRJT-UHFFFAOYSA-N ethene;prop-1-ene Chemical group C=C.CC=C HQQADJVZYDDRJT-UHFFFAOYSA-N 0.000 description 1
- 229920006242 ethylene acrylic acid copolymer Polymers 0.000 description 1
- 239000005038 ethylene vinyl acetate Substances 0.000 description 1
- 229920006226 ethylene-acrylic acid Polymers 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 238000007765 extrusion coating Methods 0.000 description 1
- 239000006232 furnace black Substances 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 229920001903 high density polyethylene Polymers 0.000 description 1
- 239000004700 high-density polyethylene Substances 0.000 description 1
- 239000006233 lamp black Substances 0.000 description 1
- 229920001684 low density polyethylene Polymers 0.000 description 1
- 239000004702 low-density polyethylene Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920002239 polyacrylonitrile Polymers 0.000 description 1
- 229920001610 polycaprolactone Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 239000004711 α-olefin Substances 0.000 description 1
Landscapes
- Resistance Heating (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Conductive Materials (AREA)
Abstract
Description
【発明の詳細な説明】
〈産業上の利用分野〉
この発明は、半導電性樹脂組成物に関し、より詳しくは
、固有抵抗値を容易に調整ザることができ、発熱体等と
して好適な半導電性樹脂組成物に関プるものである。[Detailed Description of the Invention] <Industrial Application Field> The present invention relates to a semiconductive resin composition, and more specifically, to a semiconductive resin composition whose specific resistance value can be easily adjusted and which is suitable as a heating element, etc. It relates to a conductive resin composition.
〈従来の技術と発明が解決しようとする問題点〉従来、
発熱体に用いられる半導電性樹脂組成物として、ポリエ
チレン等の有機高分子と、４電性付与剤としてのカーボ
ンブラック等とからなる組成物が知られており、半導電
性樹脂組成物の固有抵抗値は、導電性の大きなカーボン
ブラックの含有量により調整されている。<Problems to be solved by conventional technology and invention> Conventionally,
As a semiconductive resin composition used in a heating element, a composition consisting of an organic polymer such as polyethylene and carbon black as a tetraelectricity imparting agent is known. The resistance value is adjusted by the content of highly conductive carbon black.
しかしながら、半導電性樹脂組成物を所定の固有抵抗値
、例えば１０２〜１０６Ω−ｃｔｎの範囲に調整する場
合、カーボンブラックが大きな導電性を有しているため
、カーボンブラックの微少な添加量の変化により、固有
抵抗値が大ぎく変動し、所定の固有抵抗値を有する半導
電性樹脂組成物を得るのが非常に困難であり、ひいては
、発熱体として用いた場合、発熱特性がばらつくという
問題があった。However, when adjusting a semiconductive resin composition to a predetermined specific resistance value, for example, in the range of 102 to 106 Ω-ctn, since carbon black has high conductivity, minute changes in the amount of carbon black added As a result, the specific resistance value fluctuates greatly, making it extremely difficult to obtain a semiconductive resin composition having a predetermined specific resistance value, and furthermore, when used as a heating element, there is a problem that the heat generation characteristics vary. there were.
く発明の目的〉
この光間は、上記の問題点に鑑みてなされたものであり
、所定の固有抵抗値に容易かつ正確に調整することがで
き、安定した発′？、特性を示す半導電性樹脂組成物を
提供することを目的とする。OBJECT OF THE INVENTION This light interval has been developed in view of the above problems, and can be easily and accurately adjusted to a predetermined specific resistance value, resulting in stable light emission. An object of the present invention is to provide a semiconductive resin composition exhibiting the following characteristics.
く問題点を解決ηるための手段および作用〉上記目的を
達成するため、この５１明の半導電性例１指組成物は、
有ｉＦｌ高分子と、導電性付与剤と、導電性調整剤とし
ての無ｎ充填剤とを含有するものである。Means and action for solving the problems In order to achieve the above object, this 51-light semiconductive Example 1 finger composition has the following features:
It contains an iFl polymer, a conductivity imparting agent, and a non-n filler as a conductivity modifier.
この光間は、上記の構成よりなり、固有抵抗値の微調整
を無ｎ充填剤で行なうものであり、無ｎ充填剤の添加量
に対する固有抵抗値の変動が小さいので、従来のカーボ
ンブラックのみによる固有抵抗値による調整に比べ、非
常に容易かつ正確に固有抵抗値の調整ができる。すなわ
ち、前記導電性付与剤の添加量を調整すると共に、無機
充填剤の添加量を微ＦＡ整することにより、所望の固有
抵抗値に容易かつ正確に調整することができる。This optical fiber has the above-mentioned structure, and the specific resistance value is finely adjusted by using a non-n filler, and since the variation in the specific resistance value with respect to the amount of the non-n filler added is small, only conventional carbon black can be used. Compared to the adjustment using the specific resistance value, the specific resistance value can be adjusted very easily and accurately. That is, by adjusting the amount of the conductivity imparting agent added and also finely adjusting the amount of the inorganic filler added in FA, it is possible to easily and accurately adjust the specific resistance value to a desired value.
以下、この発明の詳細な説明する。The present invention will be explained in detail below.
上記有機高分子としては、低密度、中密度、高密度ポリ
エチレン、ポリプロピレン、ポリアクリロニトリル、ポ
リアミド答の結晶性高分子の他に、エチレン−プロピレ
ン共１１′！合体、エチレン−酢酸ビニル共重合体、エ
チレン−αオレフィン共重合体、エチレン−アクリル酸
共重合体、エチレン−アクリル酸エステル共東合体等の
エチレン系ポリマー、ポリメタクリル酸メチル等のアク
リル系ポリマー、ポリ塩化ビニル等のビニル系ポリマー
、エポキシ樹脂、シリコーン樹脂、ポリエステル、ポリ
ウレタン、ポリアミド、ポリカプロラクトン等の各種の
有機高分子中ル
有機高分子中、結晶性高分子は、正の抵抗温度係数を有
１ノ’る半′１９電性樹脂組成物を得る上で、特に好ま
しく、結晶化度が、適宜のもの、例えば、結晶化度１０
〜９０％の範囲のものが使用できる。Examples of the organic polymer include crystalline polymers such as low density, medium density, and high density polyethylene, polypropylene, polyacrylonitrile, and polyamide, as well as ethylene-propylene. ethylene-based polymers such as ethylene-vinyl acetate copolymer, ethylene-α-olefin copolymer, ethylene-acrylic acid copolymer, and ethylene-acrylic acid ester copolymer; acrylic polymers such as polymethyl methacrylate; Among various organic polymers such as vinyl polymers such as polyvinyl chloride, epoxy resins, silicone resins, polyesters, polyurethanes, polyamides, and polycaprolactones, crystalline polymers have a positive temperature coefficient of resistance. It is particularly preferable to obtain a semi-conductive resin composition having a crystallinity of 10%, and a crystallinity of an appropriate value, for example, a crystallinity of 10%.
~90% can be used.
上記有機高分子のうち、安価で、しかも後述する導電性
付与剤として好適なカーボンブラックとの濡れや、混和
性がよく、半導電性樹脂組成物の自己温度制御特性に優
れたポリエチレンや、エチレンとの共重合体であるエチ
レン系ポリマー、特にポリエチレンが好ましい。これら
の有□高分子は、ｔｊ１独または２種以上混合して用い
ることができる。Among the organic polymers mentioned above, polyethylene and ethylene are inexpensive, have good wettability and miscibility with carbon black, which is suitable as a conductivity imparting agent, and have excellent self-temperature control properties for semiconductive resin compositions. Ethylene-based polymers, particularly polyethylene, which are copolymers with polyethylene are preferred. These polymers can be used alone or in combination of two or more.
また、上記導電性付与剤としては、上記有ｎａＪｉ分子
に４電性を付与するものであれば、いかなるものでも使
用できるが、チャンネル、暑ナーマル、ファーネスブラ
ック、ランプブラック、アセチレンブラック等、各種の
カーボンブラックが好ましい。中でも、アセチレンブラ
ック等の導電性が大ぎく、安価な４宙性カーボンブラツ
クが好ましい。In addition, as the conductivity imparting agent, any substance can be used as long as it imparts tetraelectricity to the naJi molecules, and various types such as channel, heat nermal, furnace black, lamp black, acetylene black, etc. can be used. Carbon black is preferred. Among these, preferred is acetylene black, which has high electrical conductivity and is inexpensive.
上記の導電性付与剤は、半導電性樹脂組成物の固有抵抗
値に応じて適宜の串が使用されるが、１０％小吊以Ｖ、
好ましくは、１０〜４０重量％含有ダ°るものが好まし
い。導電性付与剤が１０小吊％未満であると、電気絶縁
性が大きくなり、また４０重量％を越えると、導電性が
大きくなり好ましくない。For the above-mentioned conductivity imparting agent, an appropriate skewer is used depending on the specific resistance value of the semiconductive resin composition.
Preferably, the content is less than 10 to 40% by weight. If the amount of the conductivity-imparting agent is less than 10% by weight, the electrical insulation property will increase, and if it exceeds 40% by weight, the electrical conductivity will increase, which is not preferable.
そして、上記半導電性樹脂組成物は、ざらに、１１ｈ記
々電性付与剤よりも導電性が小さい無機充填剤を含有づ
°る。このＲａ充填剤の含有量を制御することにより、
半導電性樹脂ＩＪ成物の所望の固有抵抗値に容易かつ正
確に調整することができる。The semiconductive resin composition generally contains an inorganic filler whose conductivity is lower than that of the 11h conductivity imparting agent. By controlling the content of this Ra filler,
The desired specific resistance value of the semiconductive resin IJ composition can be easily and accurately adjusted.
上記無機充填剤としては、シリカ、マイカ、タルク、ク
レー、ケイ礫土、炭酸カルシウム、硫酸バリウム、リト
ポン、シリカ、酸化チタン、酸化亜鉛、アルミナなどが
例示され、種々の形状、大きさのものが使用できる。Examples of the above-mentioned inorganic fillers include silica, mica, talc, clay, silica gravel, calcium carbonate, barium sulfate, lithopone, silica, titanium oxide, zinc oxide, and alumina, and various shapes and sizes are used. can.
また、上記無機充填剤は、半導電性Ｖｊ４脂組成物の所
望の固有抵抗値に応じて適宜の割合で使用することがで
きるが、体積分率０゜５〜１５％、好ましくは１〜１０
％含有するものが好ましい。体積分率が０．５％未満で
あると、半導電性樹脂組成物の固有抵抗値を調整するの
が困難である。一方、１５％を越しても固有抵抗値を調
整する上では何ら支障がないが、成形性が悪くなるなど
の問題がある。Further, the above-mentioned inorganic filler can be used in an appropriate proportion depending on the desired specific resistance value of the semiconductive Vj4 fat composition, but the volume fraction is 0.5 to 15%, preferably 1 to 10.
% is preferable. When the volume fraction is less than 0.5%, it is difficult to adjust the specific resistance value of the semiconductive resin composition. On the other hand, even if it exceeds 15%, there is no problem in adjusting the specific resistance value, but there are problems such as poor moldability.
なお、無機充填剤の種類により比重が異なるため、重！
ｄ％で表示し難いが、上記体積分率０．５〜１５％は、
一般に約１〜４０重量％に相当する。Note that the specific gravity varies depending on the type of inorganic filler, so the weight!
Although it is difficult to express in d%, the above volume fraction of 0.5 to 15% is
Generally corresponds to about 1-40% by weight.
なお、この発明の半導電性樹脂組成物は、アルキルフェ
ノール系等の酸化防止剤、ヒドロキシベンゾフェノン系
等の紫外線吸収剤などの劣化防止剤を適宜量含有してい
てもよい。The semiconductive resin composition of the present invention may contain an appropriate amount of anti-deterioration agents such as alkylphenol-based antioxidants and hydroxybenzophenone-based ultraviolet absorbers.
また、この発明の半導電性樹脂組成物は、所望する固有
抵抗値に応じて、上記有機高分子、導電性付与剤、およ
び無機充填剤等を適宜配合した復、溶融押出様や、バン
バリーミキサ−等の混合機を用いて溶融混合することに
より得られる。In addition, the semiconductive resin composition of the present invention can be prepared by appropriately blending the above-mentioned organic polymer, conductivity imparting agent, inorganic filler, etc., depending on the desired specific resistance value, and by melt extrusion or Banbury mixer. It can be obtained by melt-mixing using a mixer such as -.
上記の半導電性樹脂組成物は、例えば、一対の導体上に
押出し被覆することにより、発熱体として利用され、特
に正の抵抗温度係数を有する発熱体として好適である。The above semiconductive resin composition is used as a heating element by extrusion coating on a pair of conductors, and is particularly suitable as a heating element having a positive temperature coefficient of resistance.
〈実施例〉
以下の実施例により、この発明をざらに詳細に説明する
。<Examples> The present invention will be explained in rough detail using the following examples.
実施ｆ！１１１１〜５ならびに比較例１および２有ｖ萱
高分子として中密度ポリエチレン（比重：０．９３５）
、４電性付与剤としてファーネス系カーボンブラック
であるジーストＳ（比重： １．８）（東海カーボン
（株）製部品名）、無機充填剤として酸化亜鉛（比重：
５．５）、老化防止剤としてスミライザー１４ＸＲ（比
重：約１．１＞ （住友化学工業（株）製部品名）を
表１に示される割合で配合し、１４０〜１１０°Ｃで溶
融して、半導電性樹脂１１戊物を作製した。１ｑられた
半々電性樹脂組成物の固有抵抗値を測定したところ、表
１に示す１情宋を１４だ。Implementation f! 1111-5 and Comparative Examples 1 and 2 Medium density polyethylene (specific gravity: 0.935) as a polymer
, Geast S (specific gravity: 1.8), a furnace-based carbon black (part name manufactured by Tokai Carbon Co., Ltd.) as a tetraelectricity imparting agent, and zinc oxide (specific gravity:
5.5) As an anti-aging agent, Sumilizer 14XR (specific gravity: approx. 1.1> (part name manufactured by Sumitomo Chemical Co., Ltd.) was blended in the proportions shown in Table 1, and melted at 140 to 110 °C. A semi-conductive resin composition of 11 was prepared.The specific resistance value of the semi-conductive resin composition was measured and found to be 14 as shown in Table 1.
また、比較例として、上記無機充填剤を使用せずに、表
１に示される割合で配合し、上記実施例と同様にして、
半導電性樹脂組成物を作製し、固有抵抗１直を測定した
。その結果を表１に併せて示した。In addition, as a comparative example, the above inorganic filler was not used, but the proportions shown in Table 1 were blended, and the same procedure as in the above example was carried out.
A semiconductive resin composition was prepared, and its specific resistance was measured. The results are also shown in Table 1.
なお、表中、各材料の使用量は、それぞれ体樽分率で示
している。In addition, in the table, the usage amount of each material is shown in barrel fraction.
表１から明らかなように、比較例１．２では、導電性付
与剤の添加量が＠量変化することにより、固有抵抗値が
著しく変動し、半々電性樹脂組成物を所望の固有抵抗値
を調整することが困難である。As is clear from Table 1, in Comparative Example 1.2, the specific resistance value significantly fluctuated due to the change in the amount of the conductivity imparting agent, and the half-and-half conductive resin composition was adjusted to the desired specific resistance value. is difficult to adjust.
これに対して、実施例１〜５のものは、無機充填剤の添
加量が増大すると、固有抵抗値が低下するが、添加量当
りの固有抵抗値の変動が非常に小さく、所望の固有抵抗
値に容易かつ正確に調整できることが判明した。On the other hand, in Examples 1 to 5, as the amount of inorganic filler added increases, the specific resistance value decreases, but the variation in the specific resistance value per amount added is very small, and the desired specific resistance value can be achieved. It was found that the value could be adjusted easily and accurately.
〈発明の効果〉
以上のように、この光明の半々電性樹脂組成物によれば
、導電性の大ぎい導電性付与剤と共に、無機充填剤の添
加量により、固有抵抗値の微調整が可能となり、半導電
性樹脂組成物を所望の固有抵抗値に容易かつ正確に調整
することができるという特有の効果を奏する。<Effects of the Invention> As described above, according to Komei's half-and-half conductive resin composition, the specific resistance value can be finely adjusted by adjusting the amount of the inorganic filler as well as the highly conductive conductivity imparting agent. This provides the unique effect that the semiconductive resin composition can be easily and accurately adjusted to a desired specific resistance value.
Claims (1)
ての無機充填剤とを含有することを特徴とする半導電性
樹脂組成物。 ２、有機高分子が、エチレン系ポリマーである上記特許
請求の範囲第１項記載の半導電性樹脂組成物。 ３、導電性付与剤が、カーボンブラックである上記特許
請求の範囲第１項記載の半導電性樹脂組成物。 ４、カーボンブラックを１０〜４０重量％含有する上記
特許請求の範囲第１項記載の半導電性樹脂組成物。[Scope of Claims] 1. A semiconductive resin composition containing an organic polymer, a conductivity imparting agent, and an inorganic filler as a conductivity modifier. 2. The semiconductive resin composition according to claim 1, wherein the organic polymer is an ethylene polymer. 3. The semiconductive resin composition according to claim 1, wherein the conductivity imparting agent is carbon black. 4. The semiconductive resin composition according to claim 1, containing 10 to 40% by weight of carbon black.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15657486A JPS6312665A (en) | 1986-07-03 | 1986-07-03 | Semiconductive resin composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15657486A JPS6312665A (en) | 1986-07-03 | 1986-07-03 | Semiconductive resin composition |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6312665A true JPS6312665A (en) | 1988-01-20 |
Family
ID=15630739
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15657486A Pending JPS6312665A (en) | 1986-07-03 | 1986-07-03 | Semiconductive resin composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6312665A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01267577A (en) * | 1988-04-19 | 1989-10-25 | Tokai Rubber Ind Ltd | Roll |
| JPH01268759A (en) * | 1988-04-19 | 1989-10-26 | Tokai Rubber Ind Ltd | Electrically semiconductive high polymer material composition |
| JP2007500771A (en) * | 2003-07-29 | 2007-01-18 | ザ ユニバーシティ オブ アクロン | Conductive polymer, method for producing conductive polymer, and method for controlling conductivity of polymer |
-
1986
- 1986-07-03 JP JP15657486A patent/JPS6312665A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01267577A (en) * | 1988-04-19 | 1989-10-25 | Tokai Rubber Ind Ltd | Roll |
| JPH01268759A (en) * | 1988-04-19 | 1989-10-26 | Tokai Rubber Ind Ltd | Electrically semiconductive high polymer material composition |
| JP2007500771A (en) * | 2003-07-29 | 2007-01-18 | ザ ユニバーシティ オブ アクロン | Conductive polymer, method for producing conductive polymer, and method for controlling conductivity of polymer |
| JP2012177131A (en) * | 2003-07-29 | 2012-09-13 | Univ Of Akron | Electrically-conducting polymer, method for preparing electrically-conducting polymer, and method for controlling electrical conductivity of polymer |
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