JPS63124413A - Ion beam exposure mask - Google Patents
Ion beam exposure maskInfo
- Publication number
- JPS63124413A JPS63124413A JP61270759A JP27075986A JPS63124413A JP S63124413 A JPS63124413 A JP S63124413A JP 61270759 A JP61270759 A JP 61270759A JP 27075986 A JP27075986 A JP 27075986A JP S63124413 A JPS63124413 A JP S63124413A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- ion beam
- beam exposure
- exposure mask
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010884 ion-beam technique Methods 0.000 title claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 10
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000010936 titanium Substances 0.000 claims abstract description 9
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 9
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000010937 tungsten Substances 0.000 claims abstract description 9
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract description 10
- 229910052786 argon Inorganic materials 0.000 abstract description 5
- 239000007789 gas Substances 0.000 abstract description 2
- 239000001257 hydrogen Substances 0.000 description 6
- 229910052739 hydrogen Inorganic materials 0.000 description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- -1 hydrogen ions Chemical class 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明はイオンビーム露光マスクの構造に関する。[Detailed description of the invention] [Industrial application field] The present invention relates to the structure of an ion beam exposure mask.
従来、イオンビーム露光マスクは極めて薄いメンプラン
膜（３１、ｋｌ、Ｏ，、ボリメミド膜等）を形成するの
が通例であった。Conventionally, it has been customary to form an extremely thin Memplan film (31, kl, O,, borimemide film, etc.) in an ion beam exposure mask.
しかし、上記従来技術によると、メンプラン膜の取扱い
が困難（破損し易い）等の問題点があった。However, according to the above-mentioned conventional technology, there are problems such as difficulty in handling the Memplan membrane (easily damaged).
本発明は、かかる従来技術の問題点をなくし、メンプラ
ン膜を用いずに、且つ製作が容易なイオンビーム露光マ
スクを提供する事を目的とすると共に、全く新しいイオ
ンビーム露光用の図形状イオンビーム形成も兼ねたマス
クを提供する事を目的とする。The present invention aims to eliminate the problems of the prior art and provide an ion beam exposure mask that does not use a Menplan film and is easy to manufacture. The purpose is to provide a mask that also serves as beam forming.
上記問題点を解決するために、本発明はイオンビーム露
光マスクに関し、チタンまたはタングステン基板表面に
はシリコン窒化膜が図形状に形成されて成る手段をとる
。In order to solve the above problems, the present invention relates to an ion beam exposure mask, and employs a method in which a silicon nitride film is formed in a graphic shape on the surface of a titanium or tungsten substrate.
チタン基板は水素を含有し、加熱により水素を放出する
ため水素イオンの源としての作用があり、タングステン
基板はアルゴンを含有し、加熱によりアルゴンを放出す
る作用があると共に、シリコン窒化膜は水素あるいはア
ルゴンの放出を抑止する作用があるため、本案構成のイ
オン・ビームマスクは、基板がイオン・ソースの作用が
あり、図形状シリコン窒化膜は図形状イオン・ソースと
しての作用がある。The titanium substrate contains hydrogen and releases hydrogen when heated, so it acts as a source of hydrogen ions.The tungsten substrate contains argon and releases argon when heated, and the silicon nitride film acts as a source of hydrogen or hydrogen ions. Because of the effect of suppressing the release of argon, in the ion beam mask of the present configuration, the substrate acts as an ion source, and the graphical silicon nitride film acts as a graphical ion source.
以下、実施例により本発明を詳述する。 Hereinafter, the present invention will be explained in detail with reference to Examples.
第１１図は本発明の実施例を示すイオン・ビーム露光マ
スクの断面図である。すなわち、１叫厚程度のチタン又
はタングステン基板１０表面には、ＣｖＤ（旦ｈｅｍｉ
ｃａｌ ’Ｖａｐｏｕｒ Ｄｅｐｏｓｉｔｉｏｎ ）
により形成された０、１〜１μｒｎｆ１度の厚さのシ
リコン窒化膜（Ｓｉ、Ｎ４膜 ）２が形成され、該シリ
コン窒化膜２は図形状にエツチングされて成る。いま１
チタン基板を用いた場合には水素ガスが該基板に吸蔵さ
せる事が出来ると共に、該基板から水素イオン（Ｈ＋）
がシリコン窒化膜の窓を通して放出する事が出来る。FIG. 11 is a cross-sectional view of an ion beam exposure mask showing an embodiment of the present invention. That is, on the surface of the titanium or tungsten substrate 10, which is approximately one layer thick, CvD
cal 'Vapour Deposition)
A silicon nitride film (Si, N4 film) 2 having a thickness of 0.1 to 1 .mu.rnf1 degree is formed, and the silicon nitride film 2 is etched into a figure shape. Now 1
When a titanium substrate is used, hydrogen gas can be absorbed into the substrate, and hydrogen ions (H+) can be absorbed from the substrate.
can be released through the silicon nitride window.
尚基板がタングステンの場合にはアルゴン・ガスが吸蔵
・放出できることとなる。If the substrate is made of tungsten, argon gas can be absorbed and released.
本発発の如く、イオン・ソースを兼ねた厚板基板による
イオンビーム露光マスクは、極めて薄いメンプラン膜の
使用がなく、破損等の取扱上の問題点がなくなる効果が
あると共に、マスク製作が容易となる効果もある。An ion beam exposure mask using a thick substrate that also serves as an ion source, as in this case, eliminates the use of an extremely thin Memplan film, which eliminates handling problems such as breakage, and makes it easier to manufacture the mask. It also has the effect of making it easier.
第１図は本発明の実施例を示すイオン・ビーム露光マス
クの断面図である。
１・・・・・・チタン又はタングステン基板２・・・・
・・シリコン窒化膜
以上FIG. 1 is a cross-sectional view of an ion beam exposure mask showing an embodiment of the present invention. 1...Titanium or tungsten substrate 2...
・More than silicon nitride film
Claims (1)
膜が図形状に形成されて成る事を特徴とするイオンビー
ム露光マスク。An ion beam exposure mask characterized by a silicon nitride film formed in a graphic shape on the surface of a titanium or tungsten substrate.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61270759A JPS63124413A (en) | 1986-11-13 | 1986-11-13 | Ion beam exposure mask |
| KR1019870011307A KR930001889B1 (en) | 1986-10-13 | 1987-10-13 | Ion beam exposure mask |
| US07/107,424 US4902897A (en) | 1986-10-13 | 1987-10-13 | Ion beam gun and ion beam exposure device |
| KR1019920019579A KR930001433B1 (en) | 1986-10-13 | 1992-10-23 | Ion-beam gun |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61270759A JPS63124413A (en) | 1986-11-13 | 1986-11-13 | Ion beam exposure mask |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63124413A true JPS63124413A (en) | 1988-05-27 |
Family
ID=17490592
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61270759A Pending JPS63124413A (en) | 1986-10-13 | 1986-11-13 | Ion beam exposure mask |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63124413A (en) |
-
1986
- 1986-11-13 JP JP61270759A patent/JPS63124413A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH022109A (en) | X-ray mask | |
| JPS63124413A (en) | Ion beam exposure mask | |
| JPH04186657A (en) | Manufacture of contact wiring | |
| JPS58122724A (en) | Manufacture of semiconductor element | |
| JP2004111828A (en) | Transfer mask and exposure method | |
| JPS6057925A (en) | Formation of tungsten film onto silicon | |
| TW392209B (en) | Method for fabricating cell projection mask background of the invention | |
| JPS63131516A (en) | Ion beam exposure mask | |
| JPH01125917A (en) | Compound semiconductor substrate | |
| JPS61194828A (en) | Zn diffusing process by tube opening method | |
| JPS62291918A (en) | Selective deposition of metal | |
| JPH0453119A (en) | X-ray mask | |
| JPS6223117A (en) | Selective formation of oxide film | |
| JPS59126661A (en) | Manufacture of thin film resistor | |
| JPH04192566A (en) | Semiconductor device and its manufacture | |
| JPS5969928A (en) | Mask for x-ray exposure | |
| JPH01122120A (en) | Manufacture of x-ray exposure mask | |
| JPS60120526A (en) | Formation of minute pattern | |
| JPS6153725A (en) | Formation of mask for x-ray exposure | |
| JPS62287671A (en) | Manufacture of semiconductor strain detector | |
| JPS5867032A (en) | Semiconductor device | |
| JPH06160219A (en) | Semiconductor pressure sensor | |
| JPH0465111A (en) | X-ray mask | |
| JPS5837976B2 (en) | Impurity diffusion method | |
| JPS5929421A (en) | Manufacture of mask |