JPS63119236A - Applying method of resist - Google Patents

Applying method of resist

Info

Publication number
JPS63119236A
JPS63119236A JP25439087A JP25439087A JPS63119236A JP S63119236 A JPS63119236 A JP S63119236A JP 25439087 A JP25439087 A JP 25439087A JP 25439087 A JP25439087 A JP 25439087A JP S63119236 A JPS63119236 A JP S63119236A
Authority
JP
Japan
Prior art keywords
resist
substrate
exhaust
base plate
mounting table
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP25439087A
Other languages
Japanese (ja)
Inventor
Toshio Oshima
利雄 大島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP25439087A priority Critical patent/JPS63119236A/en
Publication of JPS63119236A publication Critical patent/JPS63119236A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To form a uniform resist film without the irregularities of application by dropping a resist onto a substrate, turning a substrate base plate while starting exhaust in a vessel and stopping the revolution and exhaust of the substrate base plate at a time when the whole surface of the substrate is coated uniformly with the resist. CONSTITUTION:A fixed quantity of a resist liquid 3 is dropped to an silicon substrate 2 placed and fixed onto a substrate base plate 1. The fixed quantity of the resist liquid 3 dripped at a central point on the silicon substrate 2 is not affected by displacement and concentrically spreads around the central point of the silicon substrate 2, and dryness is also made lower than when there is an exhaust flow on the surface of the substrate. The substrate base plate 1 is turned at high speed by a motor 9 while an on-off valve 11 is opened by a controller 12, and a gas generated from a solvent for the resist liquid and resist balls scattered are exhausted. The base plate 1 is rotated for a fixed time, thus forming a uniform resist film having no application irregularity on the silicon substrate 2.

Description

【発明の詳細な説明】 (a)発明の技術分野 本発明は基板上にレジストを塗布するレジスト塗布方法
の改良に関するものである。
DETAILED DESCRIPTION OF THE INVENTION (a) Technical Field of the Invention The present invention relates to an improvement in a resist coating method for coating a resist on a substrate.

(bl  技術の背景 IC−LSI等の半導体装置を形成する際、微細パター
ンを形成する工程で、写真蝕刻法を用いた微U≠冨才な
レジスト膜のパターンが使用されているのは周知である
(bl Background of the technology) It is well known that when forming semiconductor devices such as IC-LSI, a micro U≠ rich resist film pattern using photolithography is used in the process of forming a micro pattern. be.

(c)従来技術と問題点 たとえばシリコン(Si)のような半導体素子形成用基
板上にレジスト液を滴下し、該レジスト液を基板上に均
一に塗布してレジスト膜を形成する従来のレジスト塗布
方法について第1図を用いて説明する。
(c) Conventional technology and problems For example, conventional resist coating involves dropping a resist solution onto a semiconductor element formation substrate such as silicon (Si) and uniformly applying the resist solution onto the substrate to form a resist film. The method will be explained using FIG.

同図においてチャック機構を有する基板載置台1上には
Si基板2が固定され、該基板上2にはレジスト液3が
高圧窒素などによってレジスト滴下用ノズル4よシ滴下
される。そしてこれら基板載置台1の周囲には金属よυ
なる容器5によって囲まれ、該容器5の上面には前記滴
下用ノズル4が買通する孔を有する蓋6が設けられ、又
該容器5の下部には排気孔7が設けられ連結管8によっ
て排気ダクト(図示せず)に連結され常時排気されてい
る。
In the figure, a Si substrate 2 is fixed on a substrate mounting table 1 having a chuck mechanism, and a resist solution 3 is dropped onto the substrate 2 by a resist dropping nozzle 4 using high-pressure nitrogen or the like. There is metal around the board mounting table 1.
The upper surface of the container 5 is provided with a lid 6 having a hole through which the dripping nozzle 4 passes, and the lower part of the container 5 is provided with an exhaust hole 7. It is connected to an exhaust duct (not shown) and is constantly exhausted.

齢述した滴下された基板2上のレジスト液3は基板載置
台1をモーター9Vcよって高速回転することにより均
一な厚さで拡がって基板2上に均一に塗布されることに
なる。こ\でレジスト液3t−溶解している溶剤よ多発
生するガスや、基板載置台1を回転する際に飛散するレ
ジスト液3のレジスト玉が他の場所に拡散又は飛散しな
いように、また、レジスト玉が基板上に再付着しないよ
うに前記容器5と蓋6によって排気室10を構成し、容
器5の下部に設けられた排気孔7より排気系を介して排
気される。
By rotating the substrate mounting table 1 at high speed by the motor 9Vc, the dropped resist solution 3 on the substrate 2 is spread to a uniform thickness and is evenly applied onto the substrate 2. At this time, the resist solution 3t--To prevent the gas generated by the dissolved solvent and the resist balls of the resist solution 3 that are scattered when the substrate mounting table 1 is rotated from being spread or scattered to other locations, The container 5 and the lid 6 constitute an exhaust chamber 10 to prevent the resist balls from re-adhering to the substrate, and the resist balls are exhausted through an exhaust system from an exhaust hole 7 provided at the bottom of the container 5.

しかしながら該排気系による排気が強すぎる場合には、
レジスト液滴下の際レジスト液3が基板2と同心円状に
拡がらず、又レジスト液滴下中に基板2上のレジスト液
3の表面がかわいて塗布むらの原因となり、さらにレジ
スト液滴下用ノズル4の先端部のレジスト液が乾燥して
塗布むらあるいはゴミの原因になるなどの悪影響を及ぼ
していた。
However, if the exhaust system is too strong,
When dropping the resist liquid, the resist liquid 3 does not spread concentrically with the substrate 2, and the surface of the resist liquid 3 on the substrate 2 becomes dry during the dropping of the resist liquid, causing uneven coating. The resist solution at the tip of the printer dries, resulting in uneven coating or dust.

(d)  発明の目的 本発明の目的はかかる問題点を解消して基板上に塗布む
らのない均一なレジスト膜が形成可能なレジスト塗布方
法の提供にある。
(d) Object of the Invention An object of the present invention is to provide a resist coating method that solves the above problems and can form a uniform resist film on a substrate without uneven coating.

(e)発明の構成 すなわち本発明は上記目的を達成するために基板を載せ
た基板載置台を停止した状態で該基板上にレジストヲ滴
下し、滴下後に基板載置台を回転させると同時に容器内
の排気を始め、基板全面にむらなくレジストが被覆する
時点で基板載置台の回転および排気を停止することを特
徴とするレジスト塗布方法を提供する。
(e) Structure of the Invention In order to achieve the above object, a resist is dropped onto the substrate while the substrate mounting table on which the substrate is placed is stopped, and after the dropping, the substrate mounting table is rotated and at the same time the resist in the container is To provide a resist coating method, which starts evacuation and stops rotation of a substrate mounting table and evacuation when the resist coats the entire surface of the substrate evenly.

げ)発明の実施例 以下本発明の実施例について図面を参照しながら説明す
る。
G) Embodiments of the Invention Examples of the present invention will be described below with reference to the drawings.

第2図は本発明の一実施例を説明するためのレジスト塗
布装置の模式的構成図で前回と同等の部分については同
符号を付している。
FIG. 2 is a schematic configuration diagram of a resist coating apparatus for explaining one embodiment of the present invention, and the same parts as in the previous example are given the same reference numerals.

図から明らかなように本実施例に係る装置が従来と異な
る点は排気系の一部を形成してなる連結管8の途中にた
とえば電磁開閉パルプ11を設け、制御装置12によっ
て排気室10の雰囲気からの排気流を調節する機能が付
設した点にあシ、レジスト滴下後、基板載置台1の回転
する間のみ排気を行うCとができるようになったもので
ある。
As is clear from the figure, the device according to this embodiment differs from the conventional one in that, for example, an electromagnetic opening/closing pulp 11 is provided in the middle of a connecting pipe 8 forming a part of the exhaust system, and a control device 12 controls the exhaust chamber 10. The addition of a function to adjust the exhaust flow from the atmosphere makes it possible to perform exhaust only while the substrate mounting table 1 is rotating after dropping the resist.

基板載置台1上にたとえばシリコン基板2を載置固定し
、該シリコン基板2の中心点上に設けられたレジスト液
滴下用ノズル4を通じて該シリコン基板2に所定量のレ
ジスト液3が滴下される。
For example, a silicon substrate 2 is mounted and fixed on a substrate mounting table 1, and a predetermined amount of resist liquid 3 is dropped onto the silicon substrate 2 through a resist liquid dropping nozzle 4 provided on the center point of the silicon substrate 2. .

この場合前記開閉バルブ11は閉の状態で排気室10の
雰囲気は静止の状態であシ、該シリコン基板2上の中心
点に滴下される所定量のレジスト液3は排気流の影響を
受けずシリコン基板2の中心点の周シに円心円状に拡が
り、かつシリコン基板2上に拡がったレジスト液3の表
面は排気流がある場合に比べて乾燥度も低くすることが
可能である。次いで前記基板載置台1をモーター10に
よって高速回転すると同時に制御装置12によって前記
開閉パルプ】1は開の状態となシレジスト液の溶剤より
発生するガスや飛散するレジスト玉を排気する。所定時
間回転して前記シリコン基板2上に塗布むらのない均一
なレジスト膜を形成した後回転を停止すると同時に前記
開閉バルブ12は制御装置12によって閉の状態となる
。このように回転開始時から停止する間だけ排気するこ
とにヨシレジスト滴下用ノズル4先端部のレジス)lの
乾燥は常時排気する従来装置に比べて著しく軽減され塗
布むらあるいはゴミの発生は減少する。
In this case, the on-off valve 11 is closed and the atmosphere in the exhaust chamber 10 is stationary, so that a predetermined amount of resist liquid 3 dropped onto the center point on the silicon substrate 2 is not affected by the exhaust flow. The surface of the resist liquid 3 that spreads in a circular manner around the center point of the silicon substrate 2 and spreads on the silicon substrate 2 can be made less dry than when there is an exhaust flow. Next, the substrate mounting table 1 is rotated at high speed by the motor 10, and at the same time, the opening/closing valve 1 is opened by the control device 12 to exhaust gas generated from the solvent of the resist solution and scattered resist balls. After rotating for a predetermined period of time to form a uniform resist film on the silicon substrate 2, the rotation is stopped and at the same time, the opening/closing valve 12 is closed by the control device 12. In this way, by exhausting the air only from the start of rotation to the time it stops, the drying of the resist (1) at the tip of the nozzle 4 for dropping the reed resist is significantly reduced compared to conventional equipment that exhausts the air all the time, and the occurrence of uneven coating and dust is reduced. .

勿論必要によって排気流の遮断機構を弱い排気機構にす
ることも可能である。
Of course, if necessary, the exhaust flow blocking mechanism may be a weaker exhaust mechanism.

(g)発明の効果 本発明のレジスト塗布方法によれば、基板上に滴下され
る際のレジスト液は排気流の影響を受けることがないた
め、基板上に塗布むらのない均一なレジスト膜の形成が
可能となシ歩留、品質向上に大きな効果がある。
(g) Effects of the Invention According to the resist coating method of the present invention, the resist liquid is not affected by the exhaust flow when it is dropped onto the substrate, so a uniform resist film with no uneven coating can be formed on the substrate. This has a great effect on improving yield and quality.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来の技術を説明するためのレジスト塗布装置
断面図、第2図は本発明のレジスト塗布方法を説明する
ための装置の模式的構成図である。 図において1は基板載置台、2は基板、3にレジスト液
、4はレジスト液滴下用ノズル、7は排気孔、8は連結
管、10け排気室、11は電磁開閉パルプ、J2は制御
装置を示す。 第1図 ↓ 第2図 番
FIG. 1 is a sectional view of a resist coating apparatus for explaining a conventional technique, and FIG. 2 is a schematic configuration diagram of the apparatus for explaining a resist coating method of the present invention. In the figure, 1 is a substrate mounting table, 2 is a substrate, 3 is a resist liquid, 4 is a resist liquid dripping nozzle, 7 is an exhaust hole, 8 is a connecting pipe, 10 exhaust chambers, 11 is an electromagnetic opening/closing pulp, and J2 is a control device. shows. Figure 1↓ Figure 2 number

Claims (1)

【特許請求の範囲】 レジスト滴下用ノズルと、回転する基板載置台と、該ノ
ズルの先端及び基板載置台を収容する容器内の排気を行
う排気系を備えた装置におけるレジスト塗布方法におい
て、 基板を載せた基板載置台を停止した状態で該基板上にレ
ジストを滴下し、滴下後に基板載置台を回転させると同
時に容器内の排気を始め、基板全面にむらなくレジスト
が被覆する時点で基板載置台の回転および排気を停止す
ることを特徴とするレジスト塗布方法。
[Scope of Claim] A resist coating method in an apparatus equipped with a resist dripping nozzle, a rotating substrate mounting table, and an exhaust system for exhausting the inside of a container housing the tip of the nozzle and the substrate mounting table, comprising: Drop the resist onto the substrate while the substrate mounting table is stopped, rotate the substrate mounting table after dropping, and at the same time begin to exhaust the inside of the container. When the entire surface of the substrate is evenly covered with resist, remove the resist from the substrate mounting table. A resist coating method characterized by stopping the rotation and exhaust of the.
JP25439087A 1987-10-08 1987-10-08 Applying method of resist Pending JPS63119236A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP25439087A JPS63119236A (en) 1987-10-08 1987-10-08 Applying method of resist

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP25439087A JPS63119236A (en) 1987-10-08 1987-10-08 Applying method of resist

Publications (1)

Publication Number Publication Date
JPS63119236A true JPS63119236A (en) 1988-05-23

Family

ID=17264311

Family Applications (1)

Application Number Title Priority Date Filing Date
JP25439087A Pending JPS63119236A (en) 1987-10-08 1987-10-08 Applying method of resist

Country Status (1)

Country Link
JP (1) JPS63119236A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5612206B2 (en) * 1973-06-08 1981-03-19
JPS5666044A (en) * 1979-11-05 1981-06-04 Toshiba Corp Semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5612206B2 (en) * 1973-06-08 1981-03-19
JPS5666044A (en) * 1979-11-05 1981-06-04 Toshiba Corp Semiconductor device

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