JPS63117998A - Process for growing thick film of bismuthgarnet - Google Patents
Process for growing thick film of bismuthgarnetInfo
- Publication number
- JPS63117998A JPS63117998A JP26197186A JP26197186A JPS63117998A JP S63117998 A JPS63117998 A JP S63117998A JP 26197186 A JP26197186 A JP 26197186A JP 26197186 A JP26197186 A JP 26197186A JP S63117998 A JPS63117998 A JP S63117998A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- garnet
- bismuth
- film
- growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 20
- 239000002223 garnet Substances 0.000 claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 229910052797 bismuth Inorganic materials 0.000 claims abstract description 17
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000007791 liquid phase Substances 0.000 claims abstract description 11
- 239000000155 melt Substances 0.000 claims abstract description 9
- 230000003287 optical effect Effects 0.000 abstract description 3
- 238000009738 saturating Methods 0.000 abstract 1
- 239000013078 crystal Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【発明の詳細な説明】
〔概 要〕
ビスマスガーネット厚膜育成法であって、液相エピタキ
シャル法によりビスマス（Ｂｉ）を含むガーネットを非
磁性ガーネット基板上に片面の膜厚を１００μｍ以上に
成長させる場合、基板の回転数を２０〜３Ｏｒｐｍに保
持することにより結晶成長の速度低下を緩和することを
可能とする。[Detailed description of the invention] [Summary] A bismuth garnet thick film growth method, in which garnet containing bismuth (Bi) is grown on a non-magnetic garnet substrate to a film thickness of 100 μm or more on one side by liquid phase epitaxial method. In this case, by maintaining the rotational speed of the substrate at 20 to 3 Orpm, it is possible to alleviate the decrease in the crystal growth rate.
本発明はビスマスガーネット厚膜の育成法に関するもの
である。The present invention relates to a method for growing bismuth garnet thick films.
近時、液相成長ビスマス置換ガーネットは、磁気光学効
果が大きいため、近赤外域用の光アイソレータへの応用
が考えられている。そしてこのビスマス置換ガーネット
は光アイソレータとして十分な磁気光学効果をもたせる
ために、有効膜厚が３００μｍ程度の厚膜の成長が研究
されている。Recently, liquid-phase grown bismuth-substituted garnet has been considered for application to optical isolators for near-infrared regions because of its large magneto-optical effect. In order to provide this bismuth-substituted garnet with a sufficient magneto-optical effect as an optical isolator, research is being conducted on growing a thick film with an effective film thickness of about 300 μm.
従来ビスマス置換ガーネット厚膜を液相エピタキシャル
法で育成する１つの方法として第３図の如きディッピン
グ法がある。これは白金るつぼ１の中にガーネットを含
んだフラツクスを入れ、飽和点より５０〜１００℃上の
温度で十分に溶解し良く撹拌した後、メルト２の温度を
下げて過冷却状態とし、上から針金でつるした基板３を
メルト２中にいれ、その上にガーネット膜を成長させる
のである。この際基板３は水平に保持し、膜厚の均一性
をよくするために１５０ｒｐｍ程度で回転させていた。One of the conventional methods for growing a bismuth-substituted garnet thick film by a liquid phase epitaxial method is a dipping method as shown in FIG. This is done by placing a flux containing garnet in a platinum crucible 1, melting it sufficiently at a temperature 50 to 100°C above the saturation point, stirring well, and then lowering the temperature of the melt 2 to bring it into a supercooled state. A substrate 3 suspended by a wire is placed in the melt 2, and a garnet film is grown on it. At this time, the substrate 3 was held horizontally and rotated at about 150 rpm to improve the uniformity of the film thickness.
上記従来の育成法では、結晶成長中の成長速度の低下が
著しく、十分な膜厚をもつ結晶ができなかった。In the conventional growth method described above, the growth rate during crystal growth was significantly reduced, and a crystal with a sufficient thickness could not be produced.
本発明はこのような点に鑑みて案出されたもので、結晶
成長速度の低下を緩和してビスマスガーネット厚膜育成
法を提供することを目的としている。The present invention was devised in view of these points, and an object of the present invention is to provide a method for growing a bismuth garnet thick film by alleviating the decrease in crystal growth rate.
このため本発明においては、液相エピタキシャル法によ
り、メルト１１中に非磁性ガーネット基板１２を浸漬し
、該基板１２を回転させながら、該基板１２の両面にビ
スマスを含むガーネット膜を育成するビスマスガーネッ
ト膜育成法において、上記ビスマスを含むガーネット膜
の基板片面における膜厚を１００μｍ以上に成長させる
場合は、上記基板１２の回転数を２０乃至３０ｒｐｍに
保ちながら育成を行なうことを特徴としている。Therefore, in the present invention, a non-magnetic garnet substrate 12 is immersed in a melt 11 by a liquid phase epitaxial method, and a garnet film containing bismuth is grown on both sides of the substrate 12 while rotating the substrate 12. In the film growth method, when growing the bismuth-containing garnet film on one side of the substrate to a thickness of 100 μm or more, the growth is performed while maintaining the rotation speed of the substrate 12 at 20 to 30 rpm.
第２図に示すように基板回転数が２０〜３０ｒｐｍの場
合は、育成時間が５時間以上でも膜厚が飽和せず厚膜の
成長が可能となる。As shown in FIG. 2, when the substrate rotation speed is 20 to 30 rpm, the film thickness does not saturate even if the growth time is 5 hours or more, making it possible to grow a thick film.
第１図は本発明の詳細な説明するための図である。 FIG. 1 is a diagram for explaining the present invention in detail.
本実施例は、第１図に示すように液相エピタキシャル法
により、ビスマス（Ｂｉ）を含むガーネット（（Ｂ １
Ｔｂ） ３ （ＦｅＡ （ｌ Ｇａ） ｓｏ ＋ ２）
を非磁性ガーネット（（ＧｄＣａ） ３（ＧａＭｇＺｒ
） ｓｏ ＋ ２）基板１２上に育成するとき、基板１
２の回転数を２０〜３０ｒｐｍに保持しながら行なうの
である。その理由を次に説明する。In this example, as shown in FIG. 1, garnet containing bismuth (Bi) ((B 1
Tb) 3 (FeA (l Ga) so + 2)
Non-magnetic garnet ((GdCa) 3(GaMgZr
) so + 2) When growing on substrate 12, substrate 1
This is done while maintaining the rotation speed of step 2 at 20 to 30 rpm. The reason for this will be explained next.
第２図はビスマスを含むガーネット（（ＢｉＴｂ） ３
（ＦｅＡ ｊ！ Ｇａ）５０＋ｚ）を非磁性ガーネット
（（ＧｄＣａ）３（ＧａＭｇＺｒ） ｓｏ ＋ ｚ）基
板上に液相エピタキシャル法により育成するときの膜厚
の育成時間依存性を実験により求めて示したものである
。同図は横軸に育成時間を、縦軸に総膜厚（基板両面に
育成された膜を厚さの和）をとり、曲線Ａで基板回転数
１５゜ｒｐｍ 、曲線Ｂで１１００ｒｐ、曲線Ｃで７Ｏ
ｒｐｍ、曲線りで３０ｒｐｍ 、曲線Ｅで２Ｏｒｐｍの
各場合を示した。なお実験に用いたるつぼは直径８０ｍ
、基板は２ｃｍ角の大きさのものである。同図において
、基板回転数が１５０．１００．７Ｏｒｐｍの各場合は
、初期の育成速度は早いが育成時間１〜３時間、総膜厚
１００〜１５０ｒｐｍで、その後の膜厚増加は停止する
傾向である。これに対し２０及び３０ｒｐｍの場合は、
育成時間５時間を経過しても未だ膜厚増加の傾向が続き
、総膜厚も１８０μｍ以上となっている。従って本発明
の特許請求範囲は基板回転数を２０乃至３０ｒｐｍとし
た。Figure 2 shows garnet containing bismuth ((BiTb) 3
The dependence of the film thickness on the growth time when (FeA j! Ga) 50 + z) is grown on a non-magnetic garnet ((GdCa) 3 (GaMgZr) so + z) substrate by liquid phase epitaxial method was experimentally determined and shown. It is something. In this figure, the horizontal axis shows the growth time, and the vertical axis shows the total film thickness (the sum of the thicknesses of the films grown on both sides of the substrate), and the substrate rotation speed is 15° rpm for curve A, 1100 rpm for curve B, and 1100 rpm for curve C. 7O
The curve E shows the case where the rpm is 30 rpm, and the curve E shows the case where the rpm is 2 Orpm. The crucible used in the experiment has a diameter of 80 m.
, the substrate has a size of 2 cm square. In the same figure, when the substrate rotation speed is 150 and 100.7 rpm, the initial growth rate is fast, but after the growth time is 1 to 3 hours and the total film thickness is 100 to 150 rpm, the subsequent increase in film thickness tends to stop. be. On the other hand, in the case of 20 and 30 rpm,
Even after 5 hours of growth time, the film thickness still continues to increase, and the total film thickness is 180 μm or more. Therefore, the claimed scope of the present invention sets the substrate rotation speed at 20 to 30 rpm.
以上体べて来たように、本発明によれば、液相エピタキ
シャル法によりビスマスを含むガーネット膜を育成する
とき、メルト中での基板回転数を２０〜３０ｒｐｍとす
ることにより従来に比して膜厚を厚くすることができ、
実用的には極めて有用である。As described above, according to the present invention, when growing a garnet film containing bismuth by the liquid phase epitaxial method, the rotation speed of the substrate in the melt is set to 20 to 30 rpm, compared to the conventional method. The film thickness can be increased,
It is extremely useful in practical terms.
第１図は本発明の詳細な説明するだめの図、第２図はビ
スマスを含むガーネットを非磁性ガーネット基板上に液
相エピタキシャル法により育成するときの膜厚の育成時
間依存性を示す図、第３図は従来のビスマス置換ガーネ
ット厚膜を液相エピタキシャル法で育成する方法を説明
するための図である。
第１図において
１０は白金るつぼ、 １１はメルト、１２は基板、
１３はヒータ、１４はバッフル、
１５は熱電対である。FIG. 1 is a diagram for explaining the present invention in detail, and FIG. 2 is a diagram showing the dependence of film thickness on growth time when garnet containing bismuth is grown on a non-magnetic garnet substrate by liquid phase epitaxial method. FIG. 3 is a diagram for explaining a conventional method of growing a bismuth-substituted garnet thick film by a liquid phase epitaxial method. In Fig. 1, 10 is a platinum crucible, 11 is a melt, 12 is a substrate,
13 is a heater, 14 is a baffle,
15 is a thermocouple.
Claims (1)
非磁性ガーネット基板（１２）を浸漬し、該基板（１２
）を回転させながら、該基板（１２）の両面にビスマス
を含むガーネット膜を育成するビスマスガーネット膜育
成法において、 上記ビスマスを含むガーネット膜の基板片面における膜
厚を１００μｍ以上に成長させる場合は、上記基板（１
２）の回転数を２０乃至３０ｒｐｍに保ちながら育成を
行なうことを特徴としたビスマスガーネット厚膜育成法
。[Claims] 1. By liquid phase epitaxial method, a non-magnetic garnet substrate (12) is immersed in a melt (11), and the substrate (12) is immersed in a melt (11).
In the bismuth garnet film growth method of growing a garnet film containing bismuth on both sides of the substrate (12) while rotating the substrate (12), when growing the garnet film containing bismuth to a thickness of 100 μm or more on one side of the substrate, The above board (1
2) A bismuth garnet thick film growth method characterized in that growth is carried out while maintaining the rotational speed at 20 to 30 rpm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26197186A JPS63117998A (en) | 1986-11-05 | 1986-11-05 | Process for growing thick film of bismuthgarnet |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26197186A JPS63117998A (en) | 1986-11-05 | 1986-11-05 | Process for growing thick film of bismuthgarnet |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63117998A true JPS63117998A (en) | 1988-05-21 |
Family
ID=17369201
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26197186A Pending JPS63117998A (en) | 1986-11-05 | 1986-11-05 | Process for growing thick film of bismuthgarnet |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63117998A (en) |
-
1986
- 1986-11-05 JP JP26197186A patent/JPS63117998A/en active Pending
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