JPS63116487A - Semiconductor laser device - Google Patents
Semiconductor laser deviceInfo
- Publication number
- JPS63116487A JPS63116487A JP26316386A JP26316386A JPS63116487A JP S63116487 A JPS63116487 A JP S63116487A JP 26316386 A JP26316386 A JP 26316386A JP 26316386 A JP26316386 A JP 26316386A JP S63116487 A JPS63116487 A JP S63116487A
- Authority
- JP
- Japan
- Prior art keywords
- chip
- semiconductor laser
- monitor
- light
- receiving surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 35
- 230000005855 radiation Effects 0.000 abstract 1
- 239000004020 conductor Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 208000000260 Warts Diseases 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 210000004907 gland Anatomy 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 201000010153 skin papilloma Diseases 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、光情報処理、光通化等の光源として用いら
れろ光出力をモニタずろホトダイオードを備えた半導体
レーザ装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor laser device equipped with a photodiode that monitors optical output and is used as a light source for optical information processing, optical communication, etc.
〔従来０〕技術〕
第２図は従来より市販されているこの種の半導体レーザ
装置の断１ｆ１７図であり、この図において、１ば半導
体し・−ザチ・・ノブ、２はこの半導体レーデチップ１
の光出力をモニタずろためのホトダイオードデツプであ
る。３はｖ１１記ホトダイオードチップ２および半導体
レーザチップ１がダイボンドされた金属ブロック４が固
着されろステムベースである。５はキャップ、６は前記
キャップ５の天面に形成された光出力取出窓、７は前記
ステムベース３と電気的に接続された溶接リード、８（
よ前記ステムベース３と絶縁された封着リードである。[Conventional 0] Technology] Fig. 2 is a cross-sectional view 1F17 of this type of semiconductor laser device that has been conventionally commercially available. 1
This is a photodiode depth for monitoring the light output of the device. 3 is a stem base to which a metal block 4 to which the photodiode chip 2 and semiconductor laser chip 1 described in v11 are die-bonded is fixed. 5 is a cap, 6 is a light output extraction window formed on the top surface of the cap 5, 7 is a welding lead electrically connected to the stem base 3, and 8 (
This is a sealed lead insulated from the stem base 3.
また、半導体１／−ザチップ１より出ている実、腺。Also, fruit and glands coming out from semiconductor 1/-the chip 1.
破線の矢印は、それぞれ゛１′導体レー書アヂップ１か
らの出力光とモニタ光を示している。ホトりｆ：イ−ト
チツブ２は破線の矢印で示（ツなモニタ光を受けて、光
量に比例したモニタ電流に変換する。このモニタ電流を
取り出し、増幅して半導体し・−すチ・フプ１の駆動電
流にフィードバックして半導体レーザチップ１からの出
力光を制御ずろことができる。Broken arrows indicate the output light and monitor light from the ``1'' conductor array add-up 1, respectively. Photo chip 2 (indicated by the dashed arrow) receives the monitor light and converts it into a monitor current proportional to the amount of light. This monitor current is taken out, amplified, and converted into a semiconductor. The output light from the semiconductor laser chip 1 can be controlled by feeding back to the drive current of the semiconductor laser chip 1.
第３図は他の従来例を示す半導体レーザ装置の断面図で
、第２図のギヤ・ツブ５に代えて平面反射板９を設けた
ものであり、他は第２図と同（７ものを示している。平
面反射板９ばモニタ光を効率しく反射してホトダイオー
ドデツプ２に導＜ 、１うに設けられたものであり、第
３図の構成でもホトダイオードチップ２は、破線の矢印
で示したモニタ・光を受けて光景に比例したモニタ電流
に変換することが−Ｃき、半導体レーザチップ１からの
出力光を制御できる。また、第３図の構成では半導体レ
ーザチップ１とホトダイオードチップ２とが平行な面上
にマウンＩ・されており、第２図のように互いに垂直な
面にマウントされた構成よりも組立てを一力向、−平面
で行うことができ、量産性の面で慢ｆじζいる。FIG. 3 is a sectional view of another conventional semiconductor laser device, in which a plane reflector 9 is provided in place of the gear knob 5 in FIG. 2, and the other parts are the same as in FIG. The planar reflector 9 is provided to efficiently reflect the monitor light and guide it to the photodiode depth 2. Even in the configuration shown in FIG. It is possible to receive the monitor light shown and convert it into a monitor current proportional to the scene, thereby controlling the output light from the semiconductor laser chip 1. In addition, in the configuration shown in FIG. 3, the semiconductor laser chip 1 and the photodiode chip 2 are mounted on parallel surfaces, and assembly can be performed in one direction and on a plane rather than the configuration in which they are mounted on mutually perpendicular surfaces as shown in Fig. 2, which facilitates mass production. I'm so arrogant.
しか（）ながら、この第３図の＋Ａ￥成の半導体１／−
ザ装置は、第２図の構成の装置に比べて、図からも明ら
かなように半導体し・−ザヂッゾ１．Ｌリポ）・ダイオ
ードヂ・ツブ２にモニタ光が達するまでの距離が反射系
いＶ曲反射板９）が入るため速くなって冒、よう。ぞれ
ゆえ、半導体レーザチップ１からのモニタ光は、通常広
い方では３０〜４０’の半値全角を持つ程度に拡がるた
め、第３図の構成では第２図の構成に比べて、ホトダイ
オードチップ２が受けろモニタ光量が大幅に低下すると
いう問題点があった。However, the semiconductor 1/- of +A\ in this figure 3
As is clear from the figure, the device is a semiconductor compared to the device having the configuration shown in FIG. 2. The distance it takes for the monitor light to reach L lipo), diode, and tube 2 becomes faster due to the inclusion of the reflective V-curve reflector plate 9). Therefore, since the monitor light from the semiconductor laser chip 1 normally spreads to a full width at half maximum of 30 to 40' in the widest direction, the configuration shown in FIG. However, there was a problem in that the amount of monitor light received by the monitor was significantly reduced.
この発明は、上記のような間；頂点を解消するためにな
されたもので、ホトダイオ−トチツブが十分なモニタ光
量を受けることができる半導体レーザ装置を得ろことを
口約とＪる。This invention was made to eliminate the above-mentioned peak, and aims to provide a semiconductor laser device in which a photodiode chip can receive a sufficient amount of monitoring light.
この発明に係る半導体レーザ装置は、半導体１７−ザチ
ツプからのモニタ光がホトダイオ−トチツブの受光面に
効率良く集光されるように凹面反射板を設けたものであ
る。The semiconductor laser device according to the present invention is provided with a concave reflector so that the monitor light from the semiconductor chip 17 is efficiently focused on the light receiving surface of the photodiode chip.
〔作用］
この発明においては、凹面反射板を設けたことから半導
体レーザチ・ツブからのモニタ光を効率良くホトダイオ
ードチップの受光面に集光する。[Function] In this invention, since the concave reflector is provided, the monitor light from the semiconductor laser chip is efficiently focused on the light receiving surface of the photodiode chip.
この発明の一実施例を第［図につい゛Ｃ説明する。 An embodiment of the present invention will be described with reference to FIG.
この図において、第２図、第３図と同−付写は同じもの
を示し、１０はモニタ光を効率良く反射。In this figure, the same parts as in FIGS. 2 and 3 are shown, and 10 reflects the monitor light efficiently.
集光１）てホトダイオードデツプ２の受光向に導くよう
に設けられた凹面反射板である。This is a concave reflecting plate provided to condense light 1) and guide it to the receiving direction of the photodiode depth 2.
次に動作に・ついて説明する。Next, the operation will be explained.
第１図において、破線で示した半導体レーザチップの片
面より出射されたモニタ光は、この凹面反射板１０に当
たり、ホトダイオードデツプ２のイボ効な受光面にほと
んどか入射ずろことになる。In FIG. 1, the monitor light emitted from one side of the semiconductor laser chip indicated by the broken line hits this concave reflector 10, and almost all of it is incident on the wart-like light receiving surface of the photodiode depth 2.
そのため、モニタ光量の大半が効率良くボＩ・ダイオー
ドデツプ２によりモニタ電流に変換される。Therefore, most of the amount of monitor light is efficiently converted into a monitor current by the voltage diode depth 2.
このモニタ電流は半導体１／−ザチップ１からの出力光
と比例関係にあるため、これを増幅（７て半導体１／−
ザヂップ１の駆動電流にフィードバック１７て、半導体
Ｌ−−−ザチップ１からの出力光を制御ずろことができ
ろ１．特に、゛ト導体レーザは周囲温度の変化によ−、
て出力光が変動し易く、一定出力を維持するためにも、
このモニタ回路は必要不可欠である。凹面反射板１ｏの
作用により１・分な量のモニタ電流が確保でき、モニタ
電流の増幅度が低くずむため、半導体レーＩア装置ど１
７ての出力制御回路が簡単で、安定度の高いものですむ
ことになろ、。Since this monitor current is proportional to the output light from semiconductor 1/- the chip 1, it is amplified (7)
It is possible to control and shift the output light from the semiconductor L---the chip 1 by feedback 17 to the drive current of the ZADIP 1.1. In particular, conductor lasers suffer from changes in ambient temperature.
The output light tends to fluctuate, and in order to maintain a constant output,
This monitor circuit is essential. The effect of the concave reflector 1o makes it possible to secure a monitor current of 1.0 cm, and since the amplification of the monitor current is low, the semiconductor
7. All output control circuits should be simple and highly stable.
この発明は以上説明したとおり、市導体レーデチップと
、ホトダイオ−トチツブとを備え、半導体し ヂブップ
からのモニタ光をホトダイオードザ・ツブの受光面に集
光する凹面反射板を設けたので、量産性に簡れたデツプ
マウント構造で１゛分なモニタ電流の１”Ｊられる半導
体し ザ装置を構成できろ。このため、安価で、周辺回
路構成も筒中な１：業的に有用な半導体レーザ装置が得
られろ効果がある。As explained above, this invention is equipped with a city conductor radar chip and a photodiode chip, and is equipped with a concave reflector that focuses the monitor light from the semiconductor chip onto the light receiving surface of the photodiode chip, making it easy to mass-produce. It is possible to construct a semiconductor laser device that can handle a monitor current of 1" with a simple depth mount structure. Therefore, it is possible to construct a semiconductor laser device that is inexpensive and has a peripheral circuit configuration that is useful in industry. It's effective.
【図面の簡単な説明】
第［図は乙の発明の半導体レーザ装置の一実施例を示す
側面図、第２図は従来の半導体し・−ザ装置の断面図、
第３図は他の従来例を示す半導体レーザ装置の断面図で
ある。
図において、１は半導体し・−ザヂップ、２は１−トダ
イオード千ソゴ、６は光出力取出窓、１０は凹面反射板
である。
なお、各図中の同一符号は同一または相当部分を示１゜
第２図
１図
第３図[BRIEF DESCRIPTION OF THE DRAWINGS] FIG. 2 is a side view showing an embodiment of the semiconductor laser device of the invention of B, FIG. 2 is a sectional view of a conventional semiconductor laser device,
FIG. 3 is a sectional view of another conventional semiconductor laser device. In the figure, 1 is a semiconductor chip, 2 is a one-dimensional diode, 6 is a light output window, and 10 is a concave reflector. Note that the same reference numerals in each figure indicate the same or corresponding parts.
Claims (1)
、前記半導体レーザチップからのモニタ光を前記ホトダ
イオードチップの受光面に集光する凹面反射板を設けた
ことを特徴とする半導体レーザ装置。1. A semiconductor laser device comprising a semiconductor laser chip and a photodiode chip, and further comprising a concave reflector that focuses monitor light from the semiconductor laser chip onto a light receiving surface of the photodiode chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26316386A JPS63116487A (en) | 1986-11-05 | 1986-11-05 | Semiconductor laser device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26316386A JPS63116487A (en) | 1986-11-05 | 1986-11-05 | Semiconductor laser device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63116487A true JPS63116487A (en) | 1988-05-20 |
Family
ID=17385654
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26316386A Pending JPS63116487A (en) | 1986-11-05 | 1986-11-05 | Semiconductor laser device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63116487A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6865197B2 (en) | 2002-02-04 | 2005-03-08 | Mitsubishi Denki Kabushiki Kaisha | Laser diode module |
-
1986
- 1986-11-05 JP JP26316386A patent/JPS63116487A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6865197B2 (en) | 2002-02-04 | 2005-03-08 | Mitsubishi Denki Kabushiki Kaisha | Laser diode module |
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