JPS63114120A - Apparatus for liquid epitaxal growth - Google Patents

Abstract

PURPOSE:To eliminate an inconvenience that a material used previously during an epitaxial growth is mixed thereby to obtain a crystal having stable composition by providing a liquid reservoir which can be and removed from a supporting base, and filling an exclusive epitaxial layer forming material in the reservoir. CONSTITUTION:A recess is formed on a supporting base 21, a slide member 41 is formed to have liquid reservoirs formed of a bottom plate 37 engaged with the recess, bottom plates 28A, 28B having upper holes, and four side plates 31A, 38 mounted on the bottom plate in such a manner that two opposed side plates 31A, 38 are crossed over the base 21, and the reservoirs are formed in an assembling structure that the independent reservoirs can be individually separately or removed. The independent reservoirs 26, 27 are formed in structures which contain only the same epitaxial layer forming material. Thus, it can prevent the epitaxial forming materials laminated in a multilayer structure from being mixed as a defect.

Description

[Detailed Description of the Invention] (Summary) In a liquid phase epitaxial device, a liquid reservoir structure is provided in a slide member that slides and moves on a support base on which a substrate is installed, and a recess is provided on the support base. , and the liquid reservoir is mounted on a support base, with a bottom plate installed so as to be able to be inserted into the recess ′, a bottom plate having an opening thereon, and two opposing side plates installed on the bottom plate. Each of these liquid reservoirs is formed separately and independently from the support base so that it can be attached to and detached from the support base, and the epitaxial growth material used last time remains in the liquid reservoir. A liquid phase epitaxial growth device designed to prevent

[Industrial application field]

The present invention relates to a boat slide type liquid phase epitaxial growth apparatus, and more particularly to a liquid phase epitaxial growth apparatus in which materials for liquid phase epitaxial growth are prevented from mixing with each other.

Indium-gallium-arsenide (InGaAs) or indium-gallium-arsenide-R (InGaAsP) is deposited on a compound semiconductor substrate such as indium-phosphorus (InP).
), etc., to form a crystal for forming a semiconductor laser device, liquid-phase epitaxial growth using a boat slide method is used, which uses simple equipment and can easily obtain large-area crystals with a thin layer structure. law is used.

[Conventional technology]

Regarding such a conventional boat slide type liquid phase epitaxial growth apparatus, FIG. 12 is a plan view, FIG. 13 is a cross-sectional view taken along the line xm-xm' in FIG. 12, and XIV-XIV in FIG. 12. This will be explained using FIG. 14, which is a cross-sectional view taken along the line '.

As shown in Figures 12, 13, and 14, the conventional liquid phase epitaxial growth apparatus consists of a plate-shaped carbonaceous material having a depression 2 in which a substrate 1 such as InP is placed and a groove 3 in which the used epitaxial growth material is accommodated. A support table 4 and a melt 5 of a crystal growth material such as InGaAs or a melt 6 of a crystal growth material such as InGaAsP that slides on the support table 4 and is to be epitaxially grown on the substrate 1. A liquid reservoir 7A consisting of a rectangular parallelepiped-shaped through hole that accommodates the
7B and a slide member 8 made of carbon.

Further, on the substrate l, InP is used to prevent the surface of the substrate 1 from being contaminated by oxidation or the like.
A protection plate 9 such as a substrate is provided.

The substrate 1 is placed in the recess 2 of the support base 4, the protective plate 9 is placed on the substrate 1 in the slide member 8, and the epitaxial layer forming material to be formed on the substrate 1 is placed in the liquid reservoirs 7A and 7B. Accommodates 5.6.

After that, the lid 10 is installed on this liquid reservoir, and the support base 4
Although not shown, the reaction tube is introduced into the reaction tube, and the reaction tube is heated with hydrogen gas introduced into the reaction tube to melt the epitaxial layer forming material in the liquid reservoirs 7A and 7B.

When the epitaxial layer forming material in the liquid reservoirs 7A and 7B is melted, the slide member is moved in the direction of arrow A and the epitaxial layer forming material 5 in the liquid reservoir 7A is placed on the substrate 1. A first epitaxial layer made of the material of the liquid reservoir 7A is formed on the substrate 1 by lowering the temperature of the heating furnace.

Then, further move the slide member 8 in the direction of arrow A,
A liquid reservoir 7B was placed on the substrate 1, and a second epitaxial layer made of the material in the liquid reservoir 7B was formed on the substrate 1.

[Problem that the invention seeks to solve]

By the way, the above-mentioned liquid phase epitaxial growth apparatus is composed of the same support stand and the same slide member, and this epitaxial growth apparatus is used for multiple epitaxial growths.

Therefore, after epitaxial layer growth, the epitaxial growth material is deposited on the inner wall of the liquid reservoir of the slide member and on the surface of the support base. However, there is a risk that a small amount of material may remain, and this remaining trace amount of material may be mixed into the next epitaxial growth material, resulting in the problem that an epitaxial layer with a desired composition cannot be obtained.

The present invention aims to eliminate the above-mentioned problems and provide a liquid phase epitaxial growth apparatus in which a trace amount of epitaxial growth material does not remain in the liquid reservoir.

[Means for solving problems]

The liquid phase epitaxial growth apparatus of the present invention includes a support base having a recess, a bottom plate that can be freely inserted into the recess provided in the support base, and a bottom plate that can be freely attached to and detached from the support base; It consists of a bottom plate installed on the bottom plate and having an opening, and four side plates installed on the bottom plate having the opening, two of which face each other and straddle the support base, and each of the liquid reservoirs is It is formed independently and detachably from the support base.

[Effect]

The liquid phase epitaxial growth apparatus of the present invention includes a recess provided on a support base, a bottom plate that fits into the recess, a bottom plate having an opening above the recess, and four side plates installed on the bottom plate. It consists of a slide member having a liquid reservoir formed in such a way that two opposing side plates straddle the support base, and the liquid reservoirs are assembled and can be separated independently from each other. It has a structure that allows it to be assembled and removed.

If the structure is such that only the same epitaxial layer forming material is stored in these separate and independent liquid reservoirs,
Accidents in which epitaxial formation materials laminated into a multilayer structure are mixed with each other can be prevented.

〔Example〕

Hereinafter, one embodiment of the present invention will be described in detail with reference to the drawings.

A plan view of the liquid phase epitaxial growth apparatus of the present invention is shown in FIG. 1, and a cross-sectional view taken along line I-I'' in FIG. 1 is shown in FIG. A cross-sectional view along the line is shown in FIG. 2 (bl).

Further, FIG. 3 shows a sectional view taken along the line mm' in FIG. 1.

Further, a plan view of the support base of the liquid phase epitaxial growth apparatus of the present invention is shown in FIG. 4, a cross-sectional view taken along the line V-■° of this FIG. A cross-sectional view is shown in FIG.

As shown from FIG. 1 to FIG. 6, the support base 21 of the liquid phase epitaxial growth apparatus of the present invention is provided with a recess 22 into which the bottom plate of the liquid reservoir of the slide member, which will be described later, is inserted. A groove 23 is provided for accommodating the material for later epitaxial layer formation.

On the concave portion 22 of the support base 21, liquid reservoirs 26 and 27 containing the epitaxial layer forming materials 24 and 25 shown in FIGS. For this purpose, bottom plates 28A and 28B shown in FIGS. 7(a), 7(b), and 7(C) are fitted onto the recess 22 of the support base 21.

Furthermore, Fig. 8(a), Fig. 8(b), Fig. 8(C
), bottom plates 30A, 30 having openings 29
B is installed, and furthermore, opposing side plates 31A and 32A are installed on the support stand 21, and of these, the opposing side plates 31A and 32 are formed astride the support stand 21, respectively. There is.

Furthermore, as shown in FIG. 9(a), FIG. 9(b), and FIG. 9(C), the bottom plates 28A, 28B, the bottom plates 30A, 30B having openings thereon, and the side plates 31A, 32.
On the liquid reservoirs 26 and 27 formed by A, 1i33A,
33B is provided.

Further, as shown in FIG. 10(a), FIG. After installing it in the recess 35, place on it
A bottom plate 37 having an opening 36 in the center and side plates 38 and 39 are provided as shown in Figures (b) and (C).

A protective plate 40 made of the same material as the substrate 34 is provided on the bottom plate 37 in order to prevent the substrate 34 from being contaminated by oxidation or the like. The above-mentioned M33C is provided on the protection plate 40.

In this way, the slide member 41 with the liquid reservoirs 26, 27 can be assembled on the support base 21 and removed.
form.

In this way, the liquid reservoir 2 formed on the support base 21
6 and 27 can be assembled and removed, and if the epitaxial layer forming materials are individually placed in these reservoirs, the inconvenience of mixing the epitaxial layer growing materials can be avoided, and the composition can be adjusted. Stable epitaxial layers can be stacked.

〔Effect of the invention〕

As described above, according to the liquid phase epitaxial growth apparatus of the present invention, each of the liquid reservoirs that can be assembled and removed can be filled with a dedicated epitaxial layer forming material. This has the effect of eliminating the inconvenience of contamination with other materials, and providing crystals of an epitaxial layer with a stable composition.

[Brief explanation of the drawing]

FIG. 1 is a plan view of the liquid phase epitaxial growth apparatus of the present invention, FIG. 2(a) is a sectional view taken along the 1-1'' line in FIG. 1, and FIG. 2(b) is a 3 is a sectional view taken along the line I[l-B1' in FIG.
5 is a sectional view taken along the line v-v' in FIG. 4, FIG. 6 is a sectional view taken along the line Vl-Vl'' in FIG. 4, and FIG. Figure 7 (a
), FIG. 7(b) and FIG. 7(C) are a plan view and a sectional view of the bottom plate, FIG. 8(a) is a plan view of the liquid reservoir, and FIG. 8(b) is a plan view of the bottom plate. ), Figure 8(C) is a cross-sectional view along line IX-IX'' in Figure 8(a), Figure 9(a), 9th issue) 9(C) is a plan view of the lid and its sectional view, FIG. 10(a) is a plan view of the bottom plate where the board is installed, and FIG.
Figures (b) and 10 (C) are cross-sectional views of Figure 10 (al), Figure B (a) is a plan view of the liquid reservoir at the board installation location, Figure B fb) is Figure B (a). Figure B (C) is a cross-sectional view taken along the line XI-XI' of Figure B (at (DX n-X II'
12 is a plan view of a conventional liquid phase epitaxial growth apparatus; FIG. 13 is a sectional view taken along line xm-xm' in FIG. 12; FIG. 14 is a cross-sectional view taken along line XIV- FIG. 3 is a cross-sectional view taken along the line XTV'. In the figure, 21 is a support, 22 is a recess, 23 is a groove, 24.25 is an epitaxial layer forming material, 26.27 is a liquid reservoir, and 28A
, 28B, 30A, 30B, 37 are bottom plates, 29, 36
is the opening, 31^, 32A, 38.39 is the side plate, 33
A, 33B, 33G are lids, 34 are substrates, 35 are hollows, 4
0 indicates a protection plate, and 41 indicates a slide member. , $$E Moon's shame, Ehi'7 Kishishi, Kashiro's j-flat, d-mouth view, Fig. 1, 28σ, off-view x-T; ′! Elephant 1S Risa 4 Production side I Punishment Fig. 5 f4 (2) - ■ - w' line l; Rei T; Lu Jun Fig. 6

Claims (1)

[Claims] A support base having a recess for burying the substrate and a groove for accommodating the used epitaxial growth material, and a lid for accommodating the melt of the crystal material to be epitaxially grown on the substrate and preventing the evaporation of the melt. In a configuration including a slide member that slides and moves on the support base, the support base (21) is provided with a recess (22), and the liquid reservoirs (26, 27) are provided with a recess (22). ), the support stand (21
) The bottom plate (28) can be inserted freely into the recess (22) provided in the
A, 28B), a bottom plate (30A, 30B) that is detachable from the support base (21), is installed on the bottom plate (28A, 28B), and has an opening (29), and the support base (21) consists of four side plates (31A, 32A) installed on the support base, two of which face each other and have a structure that extends over the support base, and the configured liquid reservoirs (26, 27) are placed on the support base. stand (
21) A liquid phase epitaxial growth apparatus characterized by being formed to be detachable.