JPS63109161A - Electron ray heating and melting device - Google Patents
Electron ray heating and melting deviceInfo
- Publication number
- JPS63109161A JPS63109161A JP25309286A JP25309286A JPS63109161A JP S63109161 A JPS63109161 A JP S63109161A JP 25309286 A JP25309286 A JP 25309286A JP 25309286 A JP25309286 A JP 25309286A JP S63109161 A JPS63109161 A JP S63109161A
- Authority
- JP
- Japan
- Prior art keywords
- metal
- electron beam
- heating
- electrons
- electron
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010438 heat treatment Methods 0.000 title claims abstract description 20
- 230000008018 melting Effects 0.000 title claims abstract description 15
- 238000002844 melting Methods 0.000 title claims abstract description 15
- 238000010894 electron beam technology Methods 0.000 claims abstract description 30
- 239000000463 material Substances 0.000 claims description 22
- 239000007769 metal material Substances 0.000 abstract description 34
- 239000002184 metal Substances 0.000 abstract description 18
- 229910052751 metal Inorganic materials 0.000 abstract description 18
- 238000007740 vapor deposition Methods 0.000 abstract description 18
- 238000001704 evaporation Methods 0.000 abstract description 6
- 239000000919 ceramic Substances 0.000 abstract description 2
- 238000001816 cooling Methods 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
- 238000000151 deposition Methods 0.000 description 14
- 230000008021 deposition Effects 0.000 description 13
- 230000008020 evaporation Effects 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000000498 cooling water Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000012768 molten material Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000001883 metal evaporation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000004071 soot Substances 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
[産業上の利用分野]
本発明は電子ビームによる金属等の加熱・溶解・蒸発装
置に係シ、特に電子ビームのエネルギー利用効率を向上
させるための改良に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an apparatus for heating, melting, and evaporating metals, etc. using an electron beam, and particularly relates to an improvement for improving the energy utilization efficiency of the electron beam.
[従来の技術]
電子ビームを利用した加熱方法は他の加熱方法と比較し
て、高いエネルギー密度が得られること、ビームを精度
良く任意に制御できること等の利点があり、特に高融点
材料の溶解、蒸着等に応用されている。[Prior art] Compared to other heating methods, heating methods using electron beams have advantages such as high energy density and the ability to arbitrarily control the beam with high precision, especially for melting high melting point materials. , vapor deposition, etc.
第2図は、電子ビーム加熱の一例である電子ビーム蒸着
装置の概略を示す。電子銃7からの射出を子10は、偏
向磁石18によってつくられる磁界によりて180°請
向され、ルツボ4内照着用の金属等の材料8へ導かれる
。電子ビームによって加熱された蒸着用材料8から発生
した蒸気14は、上方に設置された基盤19に達し、そ
こでA着被膜を形成する。FIG. 2 schematically shows an electron beam evaporation apparatus that is an example of electron beam heating. The electron beam 10 emitted from the electron gun 7 is deflected by 180 degrees by a magnetic field created by a deflection magnet 18 and guided to a material 8 such as metal for internal illumination of the crucible 4 . Steam 14 generated from the deposition material 8 heated by the electron beam reaches the substrate 19 installed above, where it forms an A-deposition film.
ところで、被加熱・溶解物8に入射した電子のかなシの
部分はエネルギーをほとんど失われずに反射されること
が知られている。例えば、Sov。By the way, it is known that the portion of electrons incident on the heated/molten material 8 is reflected without losing much of its energy. For example, Sov.
Tech、 Phym、 Lett、 8(1)198
2 pp、35〜37に記載されているように、金属表
面に入射される電子のかなシの部分はそのエネルピーを
ほとんど失われずに、後方へ反射される。このときの反
射係数rlすなわち金属表面に入射する電子数と反射電
子数との比は、通常金属の溶解や蒸着に使われる電子の
エネルギー数keVから数十keVに対して、おおよそ
銅の場合 r ” 0.3
すすの場合 r ! 0.4
金の場合 r m Q、5
となっている。Tech, Phym, Lett, 8(1) 198
2 pp. 35-37, a small portion of the electrons incident on the metal surface is reflected back without losing much of its energy. At this time, the reflection coefficient rl, that is, the ratio of the number of electrons incident on the metal surface to the number of reflected electrons, is approximately r ” 0.3 For soot r! 0.4 For gold r m Q,5.
今、蒸着物質として金を考える。電子の加速電圧を10
kV、電子を発生する電子銃のフィラメントのエミッシ
ョ/?JE流を2000mAとすると、電子銃の出力は
、20kWとなる。而して前述した論文によると、金に
ついての反射係数は0.5である。Now consider gold as a deposition material. The acceleration voltage of electrons is 10
kV, emission of the filament of an electron gun that generates electrons/? If the JE current is 2000 mA, the output of the electron gun will be 20 kW. According to the above-mentioned paper, the reflection coefficient for gold is 0.5.
したがって、電子銃からの出力20 kWのうち、金の
加熱に用いられるエネルギーは実質的には10kWとな
)、残部の10kWは全表面での電子の反射によって無
駄に捨てられてしまうことになる。従来の!tlではこ
の反射電子については特に顧みられることはなく、加熱
、溶解効率が悪かった。Therefore, of the 20 kW output from the electron gun, the energy used to heat the gold is actually 10 kW), and the remaining 10 kW is wasted due to electron reflection on the entire surface. . Traditional! In tl, no particular consideration was given to the reflected electrons, and the heating and melting efficiency was poor.
そこで、特開昭59−173264に記載のように、蒸
着すべき金属材料を保持する水冷銅ルツボの本体の一1
!0壁を、そのルッデ内に供給した蒸着用金属材料に入
射し反射される電子銃からの電子ビームを受ける高さに
傾斜させて延長立設し、蒸着用金属材料から反射される
電子ビームが延長立設した側壁の内側面で反射されて、
四方に放出されることなく再び蒸着用金属材料に入射さ
扛、この電子ビームによって蒸着用金属材料は貴び加熱
される9口くなし、電子銃からの電子ビームによる加熱
効果を充分に改善して蒸着効率を向上させるというよう
に反射電子のエネルギーを有効利用するということも考
えられている。Therefore, as described in Japanese Patent Application Laid-Open No. 59-173264, one part of the main body of a water-cooled copper crucible that holds the metal material to be deposited is
! The 0 wall is tilted and extended to a height where it receives the electron beam from the electron gun that is incident on and reflected by the metal material for evaporation supplied in the Ludde, and the electron beam reflected from the metal material for evaporation is erected. It is reflected by the inner surface of the extended side wall,
The electron beam enters the metal material for deposition again without being emitted in all directions, and the metal material for deposition is heated by this electron beam.The heating effect of the electron beam from the electron gun is sufficiently improved. It is also being considered that the energy of backscattered electrons can be effectively used to improve vapor deposition efficiency.
[発明が解決しようとする問題点]
上記従来技術は、反射電子が水冷銅ルツボの延長立設し
た一側壁の内面に入射した時に、反射だけでなく吸収も
されるという点について考慮がされておらず、反射電子
のエネルギー利用効率が十分ではないという問題があっ
た。[Problems to be Solved by the Invention] The above-mentioned prior art takes into consideration the fact that when reflected electrons are incident on the inner surface of one side wall extended upright of a water-cooled copper crucible, they are not only reflected but also absorbed. There was a problem that the energy utilization efficiency of reflected electrons was not sufficient.
本発明の目的は、反射電子の利用効率をさらに高め、電
子ビームの加熱効率を高めることにある。An object of the present invention is to further increase the utilization efficiency of reflected electrons and to increase the heating efficiency of electron beams.
U問題点を解決するための手段]
上記目的は、電子銃から射出され被加熱・溶解材料によ
り反射された電子及び電子銃から射出された電子が被加
熱・溶解材料に入射した際にそこで発生する二次電子が
被加熱溶解材料供給装置又は該供給材料に当たるように
上記材料供給装置を配置することにより達成される。Means for Solving Problem U] The above purpose is to eliminate electrons emitted from an electron gun and reflected by the material to be heated and melted, and electrons emitted from the electron gun and generated there when they enter the material to be heated and melted. This is achieved by arranging the material supply device so that the secondary electrons generated by the heat and melt hit the material supply device to be heated or the material to be melted.
なお、電子銃から射出される電子線の軌跡は直線であっ
ても、又は磁場にょシ曲けられ曲線であってもよい。Note that the trajectory of the electron beam emitted from the electron gun may be a straight line or may be curved due to the magnetic field.
[作用コ
電子銃から射出される電子線は被加熱−溶解材料に衝突
する。電子線の一部は、上記材料の加熱に利用されるが
、残部は反射する。また上記材料から二次電子が発生す
る。上記の反射電子及び二次電子が被加熱溶解材料供給
装置又は上記供給材料に衝突し、上記供給材料を間接に
又は直接に加熱する。[Operation] The electron beam emitted from the electron gun collides with the heated and melted material. A portion of the electron beam is used to heat the material, while the remainder is reflected. Further, secondary electrons are generated from the above materials. The reflected electrons and secondary electrons collide with the heated molten material supply device or the feed material, and indirectly or directly heat the feed material.
反射電子及び二次電子の進行方向に画直に磁場をかける
ことにより、反射電子及び二次電子の運動方向を曲げ、
該供給材料又は該供給装置への入射を容易にすることが
できる。By applying a magnetic field perpendicular to the traveling direction of the reflected electrons and secondary electrons, the direction of movement of the reflected electrons and secondary electrons is bent.
Entry into the feed material or the feed device can be facilitated.
[実施例コ 以下本発明の実施例を第1図により説明する。[Example code] Embodiments of the present invention will be described below with reference to FIG.
第1図に示すように、排気系2によって真空に保たれた
真空槽1内にルツボ4を、設置し、その凹部に蒸着用金
属材料8を保持する。ルツボ4の温度上昇による破損を
防ぐため、ルツボ4は冷却水用パイf5に冷却水を流す
ことにより水冷され、またルツ?4と蒸着用金属材料8
が直接接触してルツ?4が反応するのを防ぎ、かつルツ
ボ4の壁からの熱の散逸を防ぐため、ルツボ4の凹部内
面にはセラミ、クス材等の内張6を施しである。電子銃
7は、蒸着用金属材料蒸気14による汚染を避けるため
、蒸着用金属材料8の表面を直接見ない位置に置かれる
。電子銃7よシ射出された電子10は紙面の裏側から表
側に向っている磁場13によりてその運行方向を180
°偏向され、蒸着用金属材料8の表面に入射する。この
時、蒸着用金属材料8に吸収されず反射して再び飛び出
した反射電子11は、磁場13によって再びその進行方
向を曲げられ、ルツゲ4に隣接された蒸着用金属材料供
給装置3及びその中に保持された蒸着用金属材料9の表
面に入射し、蒸着用金属材料9の加熱に寄与する。As shown in FIG. 1, a crucible 4 is placed in a vacuum chamber 1 kept in vacuum by an exhaust system 2, and a metal material 8 for vapor deposition is held in its recess. In order to prevent damage to the crucible 4 due to temperature rise, the crucible 4 is water-cooled by flowing cooling water through the cooling water pipe f5. 4 and metal material for deposition 8
Ruth in direct contact? In order to prevent the crucible 4 from reacting and to prevent heat from dissipating from the walls of the crucible 4, the inner surface of the recessed portion of the crucible 4 is lined with a lining 6 made of ceramic, wood, or the like. The electron gun 7 is placed at a position where it cannot directly view the surface of the metal material for vapor deposition 8 to avoid contamination by the vapor of the metal material for vapor deposition 14 . The electrons 10 emitted from the electron gun 7 are deflected in the direction of travel by a magnetic field 13 that is directed from the back side of the page to the front side.
It is deflected by .degree. and is incident on the surface of the metal material for deposition 8. At this time, the backscattered electrons 11 that are not absorbed by the metal material for vapor deposition 8 but are reflected and ejected again are bent in their traveling direction by the magnetic field 13 again, and the metal material for vapor deposition device 3 adjacent to the stubble 4 and inside the metal material for vapor deposition device 3 are moved. The light enters the surface of the metal material for vapor deposition 9 held by the metal material for vapor deposition, and contributes to the heating of the metal material for vapor deposition 9.
蒸着用金属材料供給装置3は、電子銃からの射出電子l
O及び蒸着用金属材料表面での反射電子の進行方向に長
くするのが望ましい。反射電子が蒸着用金属材料供給装
置3又はその中に保持された蒸着用金属材料9に入射す
る確率を高め、電子ビームの利用効率を高めるからであ
る。The metal material supply device 3 for vapor deposition supplies emitted electrons l from the electron gun.
It is desirable to make the length long in the traveling direction of the reflected electrons on the surface of O and the metal material for vapor deposition. This is because the probability that the reflected electrons will be incident on the deposition metal material supply device 3 or the deposition metal material 9 held therein is increased, and the utilization efficiency of the electron beam is increased.
反射電子の入射により、予加熱又は溶解された蒸着用金
属材料は図示のように橋部を通じてルツ?4へと供給さ
れる。By the incidence of backscattered electrons, the preheated or melted metal material for deposition passes through the bridge portion as shown in the figure. 4.
上述の如き本発明の実施例によれば、反射電子を利用し
て蒸着用金属材料9を予加熱又は溶融した後ルツ?4に
供給することができるため、電子銃7のエネルギー利用
効率を大きく向上させることができる。According to the embodiment of the present invention as described above, after the metal material 9 for deposition is preheated or melted using reflected electrons, the metal material 9 is melted. 4, the energy utilization efficiency of the electron gun 7 can be greatly improved.
蒸着用金属材料供給装置3の橋部は上ぶた15の有無を
問わない。蒸着用金属材料の予加熱は電子祿の直接照射
でも間接加熱でも良いからである。The bridge portion of the metal material supply device 3 for vapor deposition may or may not have an upper lid 15. This is because the preheating of the metal material for deposition may be performed by direct irradiation with electron beams or by indirect heating.
[発明の効果]
本発明によれば、被溶解材料からの反射電子、二次電子
を再利用することができるので電子銃のエネルギー利用
効率の向上の効果がある。[Effects of the Invention] According to the present invention, since reflected electrons and secondary electrons from the material to be melted can be reused, the energy utilization efficiency of the electron gun can be improved.
第1図は本発明の一実施例である蒸着用金属材料供給装
置を備えた電子ビームによる金属蒸着装置を示す図、第
2図は通常の電子ビームを用いた蒸着装置を示す囚であ
る。
1・・・真空槽 2・・・排気系3・・・蒸着
用金属材料供給装置
4・・・ルツ? 5・・・冷却水用バイブロ・
・・内張 7・・・電子銃8・・・被加熱金
属材料 9・・・供給用金属材料10・・・電子銃から
の射出電子
11・・・蒸着用金属材料表面での反射電子12・・・
反射電子 13・・・磁場14・・・金属蒸気
15・・・蒸着用金属材料供給装置櫓上ぶた16・・・
エネルギーの小さい反射電子18・・・偏向磁石
19・・・基板。
谷 浩太部 、
二」
13−・磁場FIG. 1 is a diagram showing a metal evaporation apparatus using an electron beam, which is an embodiment of the present invention, and is equipped with an apparatus for supplying metal material for evaporation, and FIG. 2 is a diagram showing an ordinary evaporation apparatus using an electron beam. 1... Vacuum chamber 2... Exhaust system 3... Metal material supply device for deposition 4... Ruth? 5... Vibro for cooling water
... Lining 7 ... Electron gun 8 ... Metal material to be heated 9 ... Metal material for supply 10 ... Emitted electrons from the electron gun 11 ... Backscattered electrons 12 on the surface of the metal material for deposition ...
Backscattered electrons 13...Magnetic field 14...Metal vapor 15...Metal material supply device for vapor deposition Tower top lid 16...
Backscattered electrons with low energy 18...Bending magnet
19...Substrate. Kota Tani, 2” 13-・Magnetic field
Claims (1)
電子線加熱溶解装置において、電子銃から射出され、被
加熱溶解材料により反射された電子及び被加熱溶解材料
で発生した二次電子が被加熱溶解材料供給装置又はその
内部の被加熱溶解材料に当たるように上記供給装置を配
置したことを特徴とする電子線加熱溶解装置。 2、磁場を用いて該反射電子及び該二次電子を偏向させ
る特許請求の範囲第1項記載の電子線加熱溶解装置。[Claims] 1. In an electron beam heating melting apparatus comprising an electron gun and a means for holding a heated melting material, electrons emitted from the electron gun and reflected by the heated melting material and the heated melting material An electron beam heating and melting apparatus characterized in that the supplying device is arranged so that the generated secondary electrons hit the heating and melting material supplying device or the heated and melting material inside the heating and melting material supplying device. 2. The electron beam heating melting apparatus according to claim 1, wherein the reflected electrons and the secondary electrons are deflected using a magnetic field.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP25309286A JPS63109161A (en) | 1986-10-24 | 1986-10-24 | Electron ray heating and melting device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP25309286A JPS63109161A (en) | 1986-10-24 | 1986-10-24 | Electron ray heating and melting device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS63109161A true JPS63109161A (en) | 1988-05-13 |
Family
ID=17246379
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP25309286A Pending JPS63109161A (en) | 1986-10-24 | 1986-10-24 | Electron ray heating and melting device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63109161A (en) |
-
1986
- 1986-10-24 JP JP25309286A patent/JPS63109161A/en active Pending
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