JPS63106765U - - Google Patents
Info
- Publication number
- JPS63106765U JPS63106765U JP19982686U JP19982686U JPS63106765U JP S63106765 U JPS63106765 U JP S63106765U JP 19982686 U JP19982686 U JP 19982686U JP 19982686 U JP19982686 U JP 19982686U JP S63106765 U JPS63106765 U JP S63106765U
- Authority
- JP
- Japan
- Prior art keywords
- gas
- reaction
- thin film
- raw material
- reaction gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000007789 gas Substances 0.000 claims description 10
- 239000012495 reaction gas Substances 0.000 claims description 8
- 239000002994 raw material Substances 0.000 claims description 5
- 239000010409 thin film Substances 0.000 claims description 5
- 238000006243 chemical reaction Methods 0.000 claims 2
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 238000007664 blowing Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
Landscapes
- Chemical Vapour Deposition (AREA)
Description
第１図ないし第４図はこの考案の第１実施例の
薄膜形成装置を示す図であつて、第１図は側断面
図、第２図は平断面図、第３図は第１図における
部の拡大図、第４図は原料ガスおよび反応ガス
の流れる状態を示す図である。第５図および第６
図はこの考案の第２実施例の薄膜形成装置を示す
図であつて、第５図は要部拡大図、第６図は原料
ガスおよび反応ガスの流れる状態を示す図である
。第７図は従来のＣＶＤ装置の側断面図である。
５……レトルト、１３……原料ガス供給管、１
５……反応ガス供給管、１８……ガス排出管、３
１……被処理物、３２……原料ガス吹込管、３３
……ガス排気管、３４……ガス分配リング、４３
……吹込ノズル、４４……排気ノズル、５１……
反応ガス吹込管、５２……反応ガス吹込ノズル。
1 to 4 are diagrams showing a thin film forming apparatus according to a first embodiment of this invention, in which FIG. 1 is a side sectional view, FIG. 2 is a plan sectional view, and FIG. 3 is the same as that shown in FIG. FIG. 4 is an enlarged view of the section showing the flow state of the raw material gas and the reaction gas. Figures 5 and 6
The figures show a thin film forming apparatus according to a second embodiment of the invention, in which FIG. 5 is an enlarged view of the main part, and FIG. 6 is a diagram showing the flow state of source gas and reaction gas. FIG. 7 is a side sectional view of a conventional CVD apparatus. 5... Retort, 13... Raw material gas supply pipe, 1
5... Reaction gas supply pipe, 18... Gas discharge pipe, 3
1... Processing object, 32... Raw material gas blowing pipe, 33
...Gas exhaust pipe, 34...Gas distribution ring, 43
...Blow nozzle, 44...Exhaust nozzle, 51...
Reaction gas blowing pipe, 52...Reaction gas blowing nozzle.
Claims (1)
反応ガスを吹き込み、それら原料ガスと反応ガス
とを高温下で化学反応させることによつて被処理
物の表面に薄膜を形成するように構成した薄膜形
成装置において、前記原料ガスおよび前記反応ガ
スをそれぞれ単独でレトルト内に吹き込むように
したことを特徴とする薄膜形成装置。 Thin film formation in which a raw material gas and a reaction gas are blown into a retort that forms a reaction tank, and a thin film is formed on the surface of the workpiece by causing a chemical reaction between the raw material gas and the reaction gas at high temperatures. A thin film forming apparatus characterized in that the source gas and the reaction gas are individually blown into a retort.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19982686U JPS63106765U (en) | 1986-12-27 | 1986-12-27 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19982686U JPS63106765U (en) | 1986-12-27 | 1986-12-27 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63106765U true JPS63106765U (en) | 1988-07-09 |
Family
ID=31161811
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19982686U Pending JPS63106765U (en) | 1986-12-27 | 1986-12-27 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63106765U (en) |
-
1986
- 1986-12-27 JP JP19982686U patent/JPS63106765U/ja active Pending