JPS63105972A - Formation of metallic film - Google Patents
Formation of metallic filmInfo
- Publication number
- JPS63105972A JPS63105972A JP24955586A JP24955586A JPS63105972A JP S63105972 A JPS63105972 A JP S63105972A JP 24955586 A JP24955586 A JP 24955586A JP 24955586 A JP24955586 A JP 24955586A JP S63105972 A JPS63105972 A JP S63105972A
- Authority
- JP
- Japan
- Prior art keywords
- laser
- plating solution
- copper
- irradiated
- temp
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000015572 biosynthetic process Effects 0.000 title description 3
- 239000002184 metal Substances 0.000 claims abstract description 24
- 229910052751 metal Inorganic materials 0.000 claims abstract description 24
- 238000007772 electroless plating Methods 0.000 claims abstract description 12
- 238000007711 solidification Methods 0.000 claims abstract description 6
- 230000008023 solidification Effects 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 17
- 239000010949 copper Substances 0.000 abstract description 27
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 26
- 229910052802 copper Inorganic materials 0.000 abstract description 26
- 238000007747 plating Methods 0.000 abstract description 24
- 239000000758 substrate Substances 0.000 abstract description 13
- 239000000919 ceramic Substances 0.000 abstract description 7
- 239000000463 material Substances 0.000 abstract description 4
- 230000001678 irradiating effect Effects 0.000 abstract description 3
- 238000001816 cooling Methods 0.000 abstract description 2
- 238000007598 dipping method Methods 0.000 abstract 1
- 239000002244 precipitate Substances 0.000 abstract 1
- 238000001556 precipitation Methods 0.000 abstract 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
- H05K3/181—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating
- H05K3/182—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating characterised by the patterning method
- H05K3/185—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating characterised by the patterning method by making a catalytic pattern by photo-imaging
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は被めっき物上にレーザを照射し選択的に金属を
析出させることにより金属膜を形成する方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method of forming a metal film by irradiating a plated object with a laser to selectively deposit metal.
従来、無電解めっきにおいて金属を選択的に析出させる
方法の一例として無電解めっき液中に被めっき物を設置
し、被めっき物にレーザを照射し金属を析出させる方法
があった。しかしこの方法はめっき液の温度が室温と略
同じである状態にて行うため、通常の室温においてはレ
ーザ照射部以外にも被めっき物に熱が伝わり照射部以外
にもめっきが析出してしまうという問題があった。Conventionally, as an example of a method for selectively depositing metal in electroless plating, there has been a method in which an object to be plated is placed in an electroless plating solution, and the object to be plated is irradiated with a laser to deposit the metal. However, this method is carried out with the plating solution temperature being approximately the same as room temperature, so at normal room temperatures, heat is transferred to the object to be plated other than the laser irradiated area, causing plating to precipitate in areas other than the irradiated area. There was a problem.
そのため熱の照射部以外への伝達を防ぐ目的で、めっき
液を循環させながら照射を行うという方法がとられてい
るが、この方法においてもやはり照射部以外にも金属が
析出してしまっていた。Therefore, in order to prevent heat from being transferred to areas other than the irradiated area, a method is used in which irradiation is performed while circulating the plating solution, but even with this method, metal is deposited in areas other than the irradiated area. .
本発明は上記問題点に鑑み成されたものでありその目的
は、所望の位置にだけ金属を析出させることのできる金
属膜形成法を提供することにある。The present invention has been made in view of the above problems, and its purpose is to provide a metal film forming method that allows metal to be deposited only at desired positions.
本発明の上記目的は、無電解めっき液中に浸漬された被
めっき物にレーザを照射し照射部に金属を析出させる金
属膜形成法において、該無電解めっき液をその凝固温度
プラス１０℃以下の温度にしてレーザ照射を行う金属膜
形成法によって達成される。The above-mentioned object of the present invention is to provide a metal film forming method in which an object to be plated immersed in an electroless plating solution is irradiated with a laser and metal is deposited on the irradiated area, in which the electroless plating solution is heated to a temperature equal to or lower than the solidification temperature of the electroless plating solution by 10°C or less. This is achieved by a metal film forming method in which laser irradiation is performed at a temperature of .
本発明の金属膜形成法の工程を第１図を用いて説明する
。The steps of the metal film forming method of the present invention will be explained using FIG.
第１図は本発明の方法を実施するための装置の模式断面
図であり、１はＹＡＧレーザビーム、２はセラミック基
板、３は無電解銅めっき液、４は容器、５はＹＡＧレー
ザ発振器、６は集光レンズ、７はミラー、８は銅パター
ン（銅Ｊ１５Ｉ）である。FIG. 1 is a schematic cross-sectional view of an apparatus for carrying out the method of the present invention, in which 1 is a YAG laser beam, 2 is a ceramic substrate, 3 is an electroless copper plating solution, 4 is a container, 5 is a YAG laser oscillator, 6 is a condensing lens, 7 is a mirror, and 8 is a copper pattern (copper J15I).
容器４に日立化成）ＩＳ２０１−Ｂを用いて前処理した
被めっき物であるセラミック基板２を設置し、無電解銅
めっき液３を投入すると同時に、例えば環境温度を下げ
ることによりめっき液３を冷却する。この冷却温度は無
電解めっき液の凝固温度プラス１０℃以下であればよく
、凝固温度以下にしてもよい。A ceramic substrate 2 to be plated, which has been pretreated using Hitachi Chemical's IS201-B, is placed in a container 4, and an electroless copper plating solution 3 is introduced into the container 4. At the same time, the plating solution 3 is cooled, for example, by lowering the environmental temperature. do. This cooling temperature may be lower than the solidification temperature of the electroless plating solution plus 10° C., and may be lower than the solidification temperature.
冷却された状態においてＹＡＧレーザを照射することに
より、レーザ照射部のめっき液のみ銅が析出する程度ま
で温度が上昇しセラミック基板２のレーザ照射部のみに
銅が析出する。By irradiating the YAG laser in a cooled state, the temperature rises to such an extent that copper is precipitated only in the plating solution in the laser irradiated area, and copper is deposited only in the laser irradiated area of the ceramic substrate 2.
第３．４図は上記の工程によりセラミック基板上に析出
させた銅、すなわち金属膜の断面図であり、第２図は従
来法により析出させた銅の膜の断面図である。FIG. 3.4 is a cross-sectional view of a copper, ie, metal film deposited on a ceramic substrate by the above process, and FIG. 2 is a cross-sectional view of a copper film deposited by a conventional method.
本発明において用いられるレーザ発振源としては前記Ｙ
ＡＧレーザ以外にも、ＣＯ□レーザ、Ｈｅ−Ｎｅレーザ
、半導体レーザ、可視光レーザ等が用いられる。また被
めっき物である基板材料としては、セラミック以外にも
エポキシ樹脂、熱硬化性樹脂、熱可塑性樹脂、金属等が
用いられる。また無電解めっき液も、無電解銅めっき液
以外に無電解ニッケルめっき液、無電解金めっき液等を
用いることができる。The laser oscillation source used in the present invention is the Y
In addition to the AG laser, a CO□ laser, a He-Ne laser, a semiconductor laser, a visible light laser, etc. are used. In addition to ceramics, epoxy resins, thermosetting resins, thermoplastic resins, metals, and the like can be used as substrate materials to be plated. Further, as the electroless plating solution, in addition to the electroless copper plating solution, an electroless nickel plating solution, an electroless gold plating solution, etc. can be used.
以下に本発明の具体的実施例を挙げ本発明を更に詳細に
説明する。The present invention will be explained in more detail by giving specific examples below.
実施例１ 第１図の装置を用いて金属膜を形成した。Example 1 A metal film was formed using the apparatus shown in FIG.
まずアルミナ基板の表面・脱脂を行った後、日立化成Ｈ
Ｓ２０１−Ｂを用い前処理を行った１次に基板を容器４
中に設置し凝固温度が一２℃の無電解銅めっき液（Ｃｕ
ＳＯ４ｅ ５５Ｈ２Ｏ−１０／ＪＬ、ＨＣＨＯ−３ｔ
ａｎ ／文、ＰＨ−１２，７）を容器４に入れ、環境温
度を下げることによりめっき液の温度を５℃にした。First, after degreasing the surface of the alumina substrate, Hitachi Chemical
The primary substrate pretreated using S201-B is placed in container 4.
Electroless copper plating solution (Cu
SO4e 55H2O-10/JL, HCHO-3t
an/text, PH-12, 7) was placed in container 4, and the temperature of the plating solution was brought to 5° C. by lowering the environmental temperature.
この状態においてＹＡＧレーザを２５鱗に集光させ無電
解銅めっき液を通してアルミナ基板に１０秒間照射した
ところ照射部に第４図のような断面形状をしだ幅４０μ
ｓ、厚さ２５−のｔＡｌ！Ｉを得た。In this state, a YAG laser was focused on 25 scales and was irradiated for 10 seconds on the alumina substrate through the electroless copper plating solution.
s, tAl of thickness 25-! I got I.
実施例２
実施例１と同様に容器４中に前処理したアルミナ基板を
用い、実施例１と同様に無電解銅めっき液を入れ、液温
を一５℃することによりめっき液を凝固させた。この状
態において実施例１と同様にＹＡＧレーザを１０秒間照
射したところ第３図のような断面形状をした＃Ａ２５μ
ｓ、厚さ２５μの銅膜を得た。Example 2 Using a pretreated alumina substrate in the container 4 as in Example 1, an electroless copper plating solution was poured in the same manner as in Example 1, and the plating solution was solidified by lowering the temperature of the solution to -5°C. . In this state, when the YAG laser was irradiated for 10 seconds in the same manner as in Example 1, #A25μ had a cross-sectional shape as shown in Figure 3.
A copper film with a thickness of 25 μm was obtained.
実施例３
実施例１と同様に容器４中にアルミナ基板及び無電解銅
めっき液を設置した後、めっき液を１０文／ｗｉｎの流
量で循環させなから液温を５℃にしＹＡＧレーザを２５
鱗に集光させ１０秒間照射したところ第３図のような断
面形状をした［２５．、厚さ２５鱗の銅膜を得た。Example 3 After placing an alumina substrate and an electroless copper plating solution in the container 4 in the same manner as in Example 1, the plating solution was circulated at a flow rate of 10 cm/win, the liquid temperature was set to 5°C, and the YAG laser was turned on at 25°C.
When the scales were focused and irradiated for 10 seconds, the cross-sectional shape was as shown in Figure 3 [25. A copper film with a thickness of 25 scales was obtained.
従来例１
実施例１において無電解銅めっき液の温度を室温と同じ
２０℃にして行った以外は実施例１と全く同様にして銅
膜を形成した。Conventional Example 1 A copper film was formed in the same manner as in Example 1 except that the temperature of the electroless copper plating solution was set to 20° C., which is the same as room temperature.
また無電解銅めっきの液温を１５℃及び１０℃にして同
様の銅膜形成を行った。Further, similar copper film formation was carried out by changing the electroless copper plating solution temperature to 15°C and 10°C.
従来例２
実施例１において無電解銅めっき液の温度を室温と同じ
２０℃にして、更にめっき液を１０又／ｗｉｎの流量で
循環させながら行った以外は実施例１と同様の銅膜形成
を行った。Conventional Example 2 Copper film formation was performed in the same manner as in Example 1, except that in Example 1, the temperature of the electroless copper plating solution was set to 20° C., which is the same as room temperature, and the plating solution was further circulated at a flow rate of 10/win. I did it.
以上の実施例、従来例により形成された銅膜の幅、厚さ
を第１表に示す。Table 1 shows the widths and thicknesses of the copper films formed in the above embodiments and conventional examples.
第１表
〔発明の効果〕
以上のように１本発明の方法によればレーザ照射部にだ
け選択的に金属を析出させ金属膜を形成することができ
るので、それによって電気特性に非常に優れた回路の形
成された印刷配線板を提供することができる。Table 1 [Effects of the Invention] As described above, according to the method of the present invention, metal can be selectively deposited only in the laser irradiated area to form a metal film, which results in extremely excellent electrical properties. It is possible to provide a printed wiring board on which a circuit is formed.
第１図は本発明の金属膜形成法を実施するための装置の
模式断面図であり、第２図は従来の方法により形成され
た金属膜の断面図であり、第３゜４図は本発明により形
成された金属膜の断面図である。
１ ： ＹＡＧレーザ ２：セラミック基板３：無
電解銅めっき液４：容器FIG. 1 is a schematic cross-sectional view of an apparatus for implementing the metal film forming method of the present invention, FIG. 2 is a cross-sectional view of a metal film formed by a conventional method, and FIGS. FIG. 3 is a cross-sectional view of a metal film formed according to the invention. 1: YAG laser 2: Ceramic substrate 3: Electroless copper plating solution 4: Container
Claims (2)
ーザを照射し照射部に金属を析出させる金属膜形成法に
おいて、該無電解めっき液をその凝固温度プラス１０℃
以下の温度にしてレーザ照射を行うことを特徴とする金
属膜形成法。(1). In a metal film forming method in which the object to be plated immersed in an electroless plating solution is irradiated with a laser and metal is deposited on the irradiated area, the electroless plating solution is heated to its solidification temperature plus 10°C.
A metal film forming method characterized by performing laser irradiation at a temperature below.
にしてレーザ照射を行う特許請求の範囲第１項記載の金
属膜形成法。(2). 2. The metal film forming method according to claim 1, wherein the electroless plating solution is heated to a temperature equal to or lower than its solidification temperature and irradiated with laser.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24955586A JPS63105972A (en) | 1986-10-22 | 1986-10-22 | Formation of metallic film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24955586A JPS63105972A (en) | 1986-10-22 | 1986-10-22 | Formation of metallic film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63105972A true JPS63105972A (en) | 1988-05-11 |
Family
ID=17194738
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24955586A Pending JPS63105972A (en) | 1986-10-22 | 1986-10-22 | Formation of metallic film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63105972A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0457323A (en) * | 1990-06-27 | 1992-02-25 | Hitachi Ltd | Manufacture of semiconductor device |
| JP2005060828A (en) * | 2003-07-28 | 2005-03-10 | Masaya Ichimura | Photodeposition gold plating method and gold plating formation apparatus |
| JP2009108337A (en) * | 2007-10-26 | 2009-05-21 | Fujifilm Corp | Electroless plating method, electroless plating apparatus and electromagnetic interference shield material |
-
1986
- 1986-10-22 JP JP24955586A patent/JPS63105972A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0457323A (en) * | 1990-06-27 | 1992-02-25 | Hitachi Ltd | Manufacture of semiconductor device |
| JP2005060828A (en) * | 2003-07-28 | 2005-03-10 | Masaya Ichimura | Photodeposition gold plating method and gold plating formation apparatus |
| US7641944B2 (en) | 2003-07-28 | 2010-01-05 | Kabushiki Kaisha Tokai Rika Denki Seisakusho | Method for forming gold plating |
| JP4521228B2 (en) * | 2003-07-28 | 2010-08-11 | 正也 市村 | Gold plating method by light deposition and gold plating film forming apparatus |
| JP2009108337A (en) * | 2007-10-26 | 2009-05-21 | Fujifilm Corp | Electroless plating method, electroless plating apparatus and electromagnetic interference shield material |
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