JPS63105409A - Semiconductor manufacturing apparatus - Google Patents
Semiconductor manufacturing apparatusInfo
- Publication number
- JPS63105409A JPS63105409A JP24905586A JP24905586A JPS63105409A JP S63105409 A JPS63105409 A JP S63105409A JP 24905586 A JP24905586 A JP 24905586A JP 24905586 A JP24905586 A JP 24905586A JP S63105409 A JPS63105409 A JP S63105409A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- transparent conductive
- conductive film
- semiconductor manufacturing
- jig
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000004065 semiconductor Substances 0.000 title claims description 9
- 239000000758 substrate Substances 0.000 claims description 41
- 239000002994 raw material Substances 0.000 claims description 7
- 239000007789 gas Substances 0.000 claims description 5
- 239000011261 inert gas Substances 0.000 claims description 5
- 238000010586 diagram Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Abstract] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、２！仮１上へ透明導電性膜を形成する半導体
製造装置に閃し、基板１と基板取り付は治具３との間に
絶縁膜をはさむことによって絶縁性を図ることに関する
ものである。[Detailed Description of the Invention] [Industrial Field of Application] The present invention provides 2! Inspired by semiconductor manufacturing equipment in which a transparent conductive film is formed on a temporary substrate 1, the substrate 1 and substrate mounting is concerned with achieving insulation by sandwiching an insulating film between the substrate 1 and a jig 3.
〔従来の技（４７）
従来の透明導電性膜を形成する半導体製造装置は、反応
室内を具空にし、不活性ガスを導入し、直流電源または
高周波電源を用いて、透明導電性膜の原材ｒｔ周辺にガ
スプラズマを発生させ、基板」−に透明導電性膜を形成
させる装置で、第２図に示すように、基板１を基板ホル
ダー２にセットをし、１人板地り付は治具３に地り付け
ていた。第２図は、基板１を基板ホルダー２にセットし
、基板取り付は治具３に取り付けた伏態を示した図。[Conventional Technique (47) Conventional semiconductor manufacturing equipment for forming transparent conductive films involves emptying the reaction chamber, introducing an inert gas, and using a DC power supply or high-frequency power supply to transform the raw material of the transparent conductive film. This is a device that generates gas plasma around the material rt to form a transparent conductive film on the substrate.As shown in Figure 2, the substrate 1 is set on the substrate holder 2, and one person attaches the board. It was attached to jig 3. FIG. 2 is a diagram showing the substrate 1 set in the substrate holder 2 and attached to the jig 3 for substrate mounting.
しかし、前述の従来技術では透明導電性膜の形成時に、
透明導電性膜の原材ｆｉ） ５から照ｑ（されるイオ／
、２次電子が基板１ならびに、基板ホルダー２にＲ’ｉ
積され、基板取り付は治具３に向かって電流が流れる。However, in the above-mentioned conventional technology, when forming a transparent conductive film,
Raw materials for transparent conductive film fi)
, secondary electrons are R'i on the substrate 1 and the substrate holder 2.
When mounting the board, a current flows toward the jig 3.
そのｔ−果、基板１の表面がダメージを受けてしまう。As a result, the surface of the substrate 1 is damaged.
しかも、小さい規模のものではなく、基板１表面全体に
受け、また、多（の基板、表面に受けてしまうため大き
な問題点となってしまう。Moreover, it is not a small scale, and it is received on the entire surface of the substrate 1, and it is received on the surface of many (substrates), resulting in a big problem.
そこで、本発明はこのような問題点を解決するためのも
ので、その目的とするところは、いかに簡単に、しかも
確実に安く、基板１と基板取り付は治Ｊ１３との絶縁を
行なうものである。Therefore, the present invention is intended to solve these problems, and its purpose is to provide insulation between the board 1 and the board mounting fixture 13 in a simple, reliable and inexpensive manner. be.
（問題点を解決するための手段〕
本発明の半導体製造装置は、反応室内を真空にし、不活
性ガスを４人し、直流電源または高周波電源を用いて、
透明導電性膜の原材料周辺にガスプラズマを発生させ、
基板上に透明Ｗｆｆｌ性膜を形成する装置において、基
板１と基板取り付は治具３との間に絶縁膜をはさんだ事
を特徴とする。(Means for Solving the Problems) The semiconductor manufacturing apparatus of the present invention makes a reaction chamber vacuum, inert gas is supplied to four people, and a DC power source or a high frequency power source is used.
Generates gas plasma around the raw material of transparent conductive film,
The apparatus for forming a transparent Wffl film on a substrate is characterized in that an insulating film is sandwiched between the substrate 1 and a jig 3 for mounting the substrate.
以下、本発明について実施例に基づいて詳細に説明する
。Hereinafter, the present invention will be described in detail based on examples.
第１Ｂ１は、本発明の半導体製造装置の構造図である。1B1 is a structural diagram of the semiconductor manufacturing apparatus of the present invention.
１は半導体製造のための基板、２は基板１を基板取り付
は治具３へ取り付けるための基板ホルダー、３は基板ホ
ルダー２を固定するための基板取り付は治具、４は基板
１に透明導電性膜の形成を均一にするためのシャッター
、５は透明導電性膜を形成するための原材料、６は反応
室、７は前記反応室の外壁、８は基板反一応室内を真空
にし、不活性ガスを導入し、直流電源または高周波電源
を用いて、透明導電性膜の扇材料周辺にガスプラズマを
発生させ、基板１上に透明導電性膜を形成する際に透明
導電性膜の原材料５から照射されるイオン、２次電子が
基板１ならびに基板ホルダー２にＭｉ ＋４’（され、
基板取り付は治具３に向かって流れる電流を遮断するた
めに、基板ホルダー２とノス仮１シり付は治具３との間
に絶縁ｌＩ２８を挿入する。これにより、基板１の表面
のダメージを解消させることを、簡単に、しかも確実に
安く行なえることを可１１ヒとした。また、上記実施例
の絶縁膜８は、ポリイミド製の股を選択した。尚、前記
絶縁膜は、あらかじめ基板ホルダー２の幅より多少大き
く、２分しても前記基板取り付は治具に固定をしても、
確実に絶縁が行なえる大きさのものである。1 is a substrate for semiconductor manufacturing, 2 is a substrate holder for attaching the substrate 1 to a jig 3, 3 is a jig for fixing the substrate holder 2, and 4 is a substrate holder for attaching the substrate 1 to a jig 3. A shutter for uniformly forming the transparent conductive film; 5 a raw material for forming the transparent conductive film; 6 a reaction chamber; 7 an outer wall of the reaction chamber; 8 a substrate; When forming a transparent conductive film on the substrate 1 by introducing an inert gas and generating gas plasma around the fan material of the transparent conductive film using a DC power source or a high frequency power source, the raw material of the transparent conductive film is The ions and secondary electrons irradiated from the substrate 1 and the substrate holder 2 are Mi +4' (
In order to interrupt the current flowing toward the jig 3 for mounting the board, an insulating lI 28 is inserted between the board holder 2 and the jig 3 for attaching the nozzle. This makes it possible to eliminate damage to the surface of the substrate 1 simply, reliably and at low cost. Further, the insulating film 8 in the above embodiment was selected to have a polyimide crotch. Note that even if the insulating film is slightly larger than the width of the substrate holder 2 in advance, and the substrate is fixed to a jig even if it is divided into two,
It is large enough to provide reliable insulation.
以上述べたように、本発明は反応室内を真空にし、不活
性ガスを４人し、直流電源または高周波電源を用いて、
透明Ｊ！ｉ電性膜の原材料周辺にガスプラズマを発生さ
せ、基板上に透明導電性膜を形成する装置において、基
板ホルダー２と基板取り付は治具３との間に絶縁膜８を
はさむ事を特徴として構成したので、基板１と基板ホル
ダー２に蓄も１１されたイオンや２次電子の電流が基板
取り付は冶！１３に向かって流れることがなく、シかも
蓄積されたイオンや２次電子は、透明Ｃ電性膜形成後に
自然放電される、と仮定する。したがって、基板１の表
面にダメージを受けることなく、ダメージをｆｆｌ＋
！１１に、しかも確実に安く行なうことを可能にした。As described above, the present invention creates a vacuum in the reaction chamber, fills the reaction chamber with inert gas, and uses a DC power source or a high frequency power source.
Transparent J! An apparatus for forming a transparent conductive film on a substrate by generating gas plasma around the raw material of an i-conductive film, characterized in that an insulating film 8 is sandwiched between a substrate holder 2 and a jig 3 for mounting the substrate. Since the structure is configured as follows, the current of ions and secondary electrons stored in the substrate 1 and the substrate holder 2 can be easily used when mounting the substrate. It is assumed that the ions and secondary electrons that do not flow toward 13 and are accumulated are spontaneously discharged after the transparent C conductive film is formed. Therefore, the surface of the substrate 1 is not damaged and the damage is ffl+
! 11, and made it possible to do it reliably and cheaply.
第１図は、本発明の半導体製造装置の構造平面図。 第２図は、従来の半導体製造装置の構造平面図。 １・・・基板 ２・・・基板ホルダー ３・・・基板取り付は治具 ４・・・シャッター ５・・・透明導電性ｖｅＦｒｔ材料 ６・・・反応室 ７・・・反応室外壁 ８・・・絶縁膜 以 上 出騨１人 セイコーエプソン株式会社 ２ ′ｉ？Ｊ２図 FIG. 1 is a structural plan view of a semiconductor manufacturing apparatus according to the present invention. FIG. 2 is a structural plan view of a conventional semiconductor manufacturing apparatus. 1... Board 2... Board holder 3...Jig for mounting the board 4...Shutter 5...Transparent conductive veFrt material 6...Reaction chamber 7...Reaction chamber outer wall 8...Insulating film that's all 1 person Seiko Epson Corporation 2′i? J2 diagram
Claims (1)
または高周波電源を用いて、透明導電性膜の原材料周辺
にガスプラズマを発生させ、基板上に透明導電性膜を形
成する装置において、前記基板と基板取り付け治具との
間に絶縁膜をはさんだ事を特徴とする半導体製造装置。In the apparatus for forming a transparent conductive film on a substrate by evacuating the reaction chamber, introducing an inert gas, and generating gas plasma around the raw material of the transparent conductive film using a DC power supply or a high frequency power supply, A semiconductor manufacturing device characterized by sandwiching an insulating film between a substrate and a substrate mounting jig.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24905586A JPS63105409A (en) | 1986-10-20 | 1986-10-20 | Semiconductor manufacturing apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24905586A JPS63105409A (en) | 1986-10-20 | 1986-10-20 | Semiconductor manufacturing apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63105409A true JPS63105409A (en) | 1988-05-10 |
Family
ID=17187338
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24905586A Pending JPS63105409A (en) | 1986-10-20 | 1986-10-20 | Semiconductor manufacturing apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63105409A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61214306A (en) * | 1985-03-18 | 1986-09-24 | 大阪特殊合金株式会社 | Method and apparatus for transparent conducting film |
-
1986
- 1986-10-20 JP JP24905586A patent/JPS63105409A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61214306A (en) * | 1985-03-18 | 1986-09-24 | 大阪特殊合金株式会社 | Method and apparatus for transparent conducting film |
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