JPS6310451A - Electron shower device for ion implanting apparatus - Google Patents

Electron shower device for ion implanting apparatus

Info

Publication number
JPS6310451A
JPS6310451A JP61151985A JP15198586A JPS6310451A JP S6310451 A JPS6310451 A JP S6310451A JP 61151985 A JP61151985 A JP 61151985A JP 15198586 A JP15198586 A JP 15198586A JP S6310451 A JPS6310451 A JP S6310451A
Authority
JP
Japan
Prior art keywords
electrons
target
reflector
electron
ion beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP61151985A
Other languages
Japanese (ja)
Inventor
Shintaro Matsuda
信太郎 松田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP61151985A priority Critical patent/JPS6310451A/en
Publication of JPS6310451A publication Critical patent/JPS6310451A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To prevent negative electrification by electron and static electricity break down by using a circular paraboloid reflector, which reflects electrons proceeding for target to the opposite direction, as an electron reflector. CONSTITUTION:Thermal electrons are generated by flowing electric current through a metal filament 1b from a power supply 2. These thermal electrons are accelerated toward a circular paraboloid reflector 4b by several hundred volts applied by a bias power supply 3. On collision of these electrons to the reflector 4b, secondary electrons whose energy is ranging from several eV to several is of eV are generated. The circular paraboloid reflector 4b pushes these secondary electrons effectively into an ion beam 6 and the electrons neutralize charges of the ion beam itself. Furthermore, since the reflector reflects the electrons proceeding for target 7 to the opposite direction, electrons 5 with energy do not directly collide with a target 7. Accordingly, positive electrification by the ion beam 6, negative electrification by the electron shower, further static electricity break down on the target 7 can be prevented.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、イオン注入装置における電荷蓄積あるいは
静電破壊を防止する為の電子シャワー装置に関するもの
である。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an electronic shower device for preventing charge accumulation or electrostatic damage in an ion implantation device.

〔従来の技術〕[Conventional technology]

第2図に従来のイオン注入装置用電子シャワー装置の構
成模式図を示す。図において、1aは金属フィラメント
(例えばタングステン)、2はフィラメント1aに接続
されるフィラメント電源、3は電子を加速する為のバイ
アス電源、4aは電子反射板、5はフィラメント1aか
ら放出され反射板4aで反射される電子、6はイオンビ
ーム、7はターゲット(例えばシリコンウェハ)である
FIG. 2 shows a schematic diagram of the configuration of a conventional electronic shower device for an ion implanter. In the figure, 1a is a metal filament (for example, tungsten), 2 is a filament power supply connected to the filament 1a, 3 is a bias power supply for accelerating electrons, 4a is an electron reflection plate, and 5 is a reflection plate 4a that is emitted from the filament 1a. 6 is an ion beam, and 7 is a target (for example, a silicon wafer).

次に動作について説明する。金属フィラメント1aに電
流をフィラメント電源2より流すことにより、熱電子を
発生する。この熱電子をバイアス電源3により数百ボル
トで電子反射板4aに向けて加速する。加速された電子
が電子反射板4aに衝突することにより、数エレクトロ
ンボルトから十数エレクトロンボルトの二次電子5が発
生する。
Next, the operation will be explained. By passing current through the metal filament 1a from the filament power supply 2, thermoelectrons are generated. These hot electrons are accelerated by the bias power supply 3 at several hundred volts toward the electron reflection plate 4a. When the accelerated electrons collide with the electron reflection plate 4a, secondary electrons 5 of several to ten-odd electron volts are generated.

この時、この電子反射板4aはターゲット7の方向を向
いており、発生した二次電子5はターゲットにそそがれ
る。これにより、イオンビーム6が当って正に帯電した
ターゲットの電荷を中和する。
At this time, the electron reflecting plate 4a faces the target 7, and the generated secondary electrons 5 are directed toward the target. This neutralizes the charge on the target that is positively charged when the ion beam 6 hits it.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

従来の電子シャワー装置は以上のように構成されている
為、ターゲット表面にエネルギーを持った電子が直接当
り、ターゲットが電子により真の帯電を起こし、またこ
の帯電により、ターゲットが静電破壊を起こすという問
題点があった。
Conventional electronic shower equipment is configured as described above, so energetic electrons directly hit the target surface, causing the target to be truly charged by the electrons, and this charging also causes electrostatic damage to the target. There was a problem.

この発明は上記のような問題点を解消するためになされ
たもので、電子による負の帯電及び静電破壊を防ぐこと
が出来る電子シャワー装置を得ることを目的とする。
This invention was made to solve the above-mentioned problems, and aims to provide an electronic shower device that can prevent negative charging due to electrons and electrostatic damage.

〔問題点を解決するための手段〕[Means for solving problems]

この発明に係る電子シャワー値開は、電子反射板を円形
状の放物面反射板にするとともに、ターゲットに向う方
向とは反対方向に電子を反射する様にしたものである。
In the electron shower value aperture according to the present invention, the electron reflection plate is a circular parabolic reflection plate, and the electrons are reflected in the opposite direction to the direction toward the target.

〔作用〕[Effect]

この発明においては、円形状の放物面反射板により、電
子が正の電荷を持つイオンビーム中へ効果的に押し込ま
れ、イオンビームそのものの電荷が中和されるとともに
、ターゲットに向う方向とは反対方向に電子が反射され
ることで、工ふルギーを持った電子が直接ターゲットに
当ることを防ぐ。
In this invention, the circular parabolic reflector effectively pushes electrons into the positively charged ion beam, neutralizes the charge of the ion beam itself, and directs the electrons toward the target. By reflecting the electrons in the opposite direction, it prevents the energetic electrons from directly hitting the target.

〔実施例〕〔Example〕

以下、この発明の一実施例を図について説明する。第1
図において、1bは金属フィラメント(例えばタングス
テン)、2はフィラメント1bに接続されるフィラメン
ト電源、3はフィラメント1bから放出される熱電子を
加速する為のバイアス電源、4bはターゲットに向う方
向とは反対方向に電子を反射する円形状反射板、5はフ
ィラメント1bから放出され反射板4bで反射される電
子、6はイオンビーム、7はターゲット(例えばシリコ
ンウニハ)である。
An embodiment of the present invention will be described below with reference to the drawings. 1st
In the figure, 1b is a metal filament (e.g. tungsten), 2 is a filament power supply connected to filament 1b, 3 is a bias power supply for accelerating the thermoelectrons emitted from filament 1b, and 4b is the opposite direction to the target. 5 is a circular reflecting plate that reflects electrons in the direction; 5 is an electron emitted from the filament 1b and reflected by the reflecting plate 4b; 6 is an ion beam; and 7 is a target (for example, a silicon wafer).

次に動作について説明する。金属フィラメント1bに電
流をフィラメント電′tA2より流すことにより、熱電
子を発生する。このフィラメント1bより発生した熱電
子を、バイアス電源3により数百ポルトで円形状の放物
面反射板4bに向けて加速する。この電子が反射板4b
に衝突すると、数エレクトロンボルトから十数エレクト
ロンボルトの二次電子5が発生する。上記円形状の放物
面反射板4bは、この二次電子5を効果的にイオンビー
ム6中へ押し込み、イオンビーム6そのモノノミ荷を中
和させるとともに、ターゲット7に向う方向とは反対方
向に電子を反射するため、エネルギーを持った電子5が
直接ターゲット7に当たることはない。これによりター
ゲット7でのイオンビーム6による正の帯電、及び電子
シャワーによる負の帯電、さらには静電破壊を防止する
ことができる。
Next, the operation will be explained. By passing a current through the metal filament 1b from the filament current 'tA2, hot electrons are generated. Thermionic electrons generated from the filament 1b are accelerated by a bias power source 3 at several hundred ports toward a circular parabolic reflector 4b. These electrons are reflected on the reflecting plate 4b.
When it collides with , secondary electrons 5 of several to ten-odd electron volts are generated. The circular parabolic reflector 4b effectively pushes the secondary electrons 5 into the ion beam 6, neutralizes the monotonous charge of the ion beam 6, and directs the secondary electrons 5 in the opposite direction to the target 7. Since the electrons are reflected, the energetic electrons 5 do not directly hit the target 7. This makes it possible to prevent the target 7 from being positively charged by the ion beam 6 and negatively charged by the electron shower, as well as from electrostatic damage.

〔発明の効果〕〔Effect of the invention〕

以上のように、この発明によれば、イオン注入装置用電
子シャワー装置において電子反射板を、電子をターゲッ
トに向う方向とは反対向きに反射する円形状の放物面反
射板としたので、エネルギーを持つ電子が直接ターゲッ
トに当ることがなく、かつイオンビーム中に効果的に押
し込まれ、ターゲットでの電子による負の帯電及び静電
破壊を起こすことがなく、またイオンビームによる正の
帯電及び静電破壊を防ぐことのできる効果がある。
As described above, according to the present invention, in the electron shower device for an ion implanter, the electron reflector is a circular parabolic reflector that reflects electrons in the opposite direction to the direction toward the target. The electrons with the ion beam do not directly hit the target and are effectively pushed into the ion beam, preventing the target from being negatively charged and electrostatically damaged by the electrons, and also prevents the target from being negatively charged and electrostatically charged by the ion beam. It has the effect of preventing electrical damage.

【図面の簡単な説明】[Brief explanation of drawings]

第1図はこの発明の一実施例による電子シャワー装置を
示す模式図、第2図は従来の電子シャツ−装置を示す模
式図である。 4bは円形状の放物面電子反射板、5は電子、6はイオ
ンビーム、7はターゲット。 なお図中同一符号は同−又は相当部分を示す。
FIG. 1 is a schematic diagram showing an electronic shower device according to an embodiment of the present invention, and FIG. 2 is a schematic diagram showing a conventional electronic shirt device. 4b is a circular parabolic electron reflector, 5 is an electron beam, 6 is an ion beam, and 7 is a target. Note that the same reference numerals in the figures indicate the same or equivalent parts.

Claims (1)

【特許請求の範囲】[Claims] (1)イオン注入装置によるイオン注入中に発生する正
の電荷を中和するイオン注入装置用電子シャワー装置に
おいて、 電子をイオンビーム中に、かつターゲットに向かう方向
とは反対方向に反射する円形状放物面電子反射板を備え
たことを特徴とするイオン注入装置用電子シャワー装置
(1) In an electronic shower device for an ion implanter that neutralizes positive charges generated during ion implantation by an ion implanter, a circular shape that reflects electrons into the ion beam in the opposite direction to the direction toward the target is used. An electronic shower device for an ion implanter, characterized by comprising a parabolic electron reflector.
JP61151985A 1986-06-27 1986-06-27 Electron shower device for ion implanting apparatus Pending JPS6310451A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61151985A JPS6310451A (en) 1986-06-27 1986-06-27 Electron shower device for ion implanting apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61151985A JPS6310451A (en) 1986-06-27 1986-06-27 Electron shower device for ion implanting apparatus

Publications (1)

Publication Number Publication Date
JPS6310451A true JPS6310451A (en) 1988-01-18

Family

ID=15530537

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61151985A Pending JPS6310451A (en) 1986-06-27 1986-06-27 Electron shower device for ion implanting apparatus

Country Status (1)

Country Link
JP (1) JPS6310451A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0469321U (en) * 1990-10-29 1992-06-19

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0469321U (en) * 1990-10-29 1992-06-19

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