JPS63104368A - Semiconductory device - Google Patents

Semiconductory device

Info

Publication number
JPS63104368A
JPS63104368A JP61250502A JP25050286A JPS63104368A JP S63104368 A JPS63104368 A JP S63104368A JP 61250502 A JP61250502 A JP 61250502A JP 25050286 A JP25050286 A JP 25050286A JP S63104368 A JPS63104368 A JP S63104368A
Authority
JP
Japan
Prior art keywords
diode
connected
source
well
type substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP61250502A
Inventor
Taketo Yoshida
Original Assignee
Nec Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Corp filed Critical Nec Corp
Priority to JP61250502A priority Critical patent/JPS63104368A/en
Publication of JPS63104368A publication Critical patent/JPS63104368A/en
Application status is Pending legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203Particular design considerations for integrated circuits
    • H01L27/0248Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0255Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements

Abstract

PURPOSE:To obtain a CMOS semiconductor device holding a high electrostatic breakdown strength by equipping an input electrostatic protecting circuit with a P-N diode having a cathode electrode consisting of an N-type substrate holding two different reverse direction breakdown characteristics. CONSTITUTION:This device is composed of the first diode which has a low concentration of anodes made by diffusing a P-well 2 to an N-type substrate 1 and deep junctions as well as the second diode which has a high concentration of anodes made by a source and drain diffusion 3 and shallow junctions. Even at the first diode, the source and drain diffusion 3 is diffused so as to improve its ohmic property. And yet, both first and second diodes are connected by an aluminum interconnection 6. An equivalent circuit of an electrostatic protecting circuit is connected from a, pad 7 to the first diode 8 and then is connected to the second diode 9 through a resistance component 10 and further is connected to an internal gate through the resistance component 11.
JP61250502A 1986-10-20 1986-10-20 Semiconductory device Pending JPS63104368A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61250502A JPS63104368A (en) 1986-10-20 1986-10-20 Semiconductory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61250502A JPS63104368A (en) 1986-10-20 1986-10-20 Semiconductory device

Publications (1)

Publication Number Publication Date
JPS63104368A true JPS63104368A (en) 1988-05-09

Family

ID=17208833

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61250502A Pending JPS63104368A (en) 1986-10-20 1986-10-20 Semiconductory device

Country Status (1)

Country Link
JP (1) JPS63104368A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007335882A (en) * 1992-09-21 2007-12-27 Siliconix Inc BiCDMOS STRUCTURE AND MANUFACTURING METHOD THEREOF

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007335882A (en) * 1992-09-21 2007-12-27 Siliconix Inc BiCDMOS STRUCTURE AND MANUFACTURING METHOD THEREOF

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