JPS63102248A - Overheat protection circuit - Google Patents

Overheat protection circuit

Info

Publication number
JPS63102248A
JPS63102248A JP24857086A JP24857086A JPS63102248A JP S63102248 A JPS63102248 A JP S63102248A JP 24857086 A JP24857086 A JP 24857086A JP 24857086 A JP24857086 A JP 24857086A JP S63102248 A JPS63102248 A JP S63102248A
Authority
JP
Japan
Prior art keywords
circuit
transistor
pnp transistor
current
protection circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP24857086A
Other languages
Japanese (ja)
Other versions
JPH0671060B2 (en
Inventor
Yukihiro Kameyama
幸宏 亀山
Toshio Kudo
工藤 敏雄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC IC Microcomputer Systems Co Ltd
Original Assignee
NEC IC Microcomputer Systems Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC IC Microcomputer Systems Co Ltd filed Critical NEC IC Microcomputer Systems Co Ltd
Priority to JP24857086A priority Critical patent/JPH0671060B2/en
Publication of JPS63102248A publication Critical patent/JPS63102248A/en
Publication of JPH0671060B2 publication Critical patent/JPH0671060B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Continuous-Control Power Sources That Use Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To make the setting of an operation temperature easy, and make the dispersion width of set temperature narrow, by a method wherein a constant current circuit is always normally operated by making a PNP transistor absorb the excess current of the constant current circuit before reaching an operation set temperature, and making it flow into a by-pass. CONSTITUTION:A temperature detection circuit comprises transistors Q5, Q6 and Q10, and resistors R5-R7, and drives transistors Q7 and Q8 which constitute a control circuit. Until P-N junction temperature reaches the operation set temperature of an overheat protection circuit the emitter current of the PNP transistor Q10 is a residual which results from ion of deduction of the collector current of the PNP transistor Q6 from that of PNP transistor Q5. At the operation time of overheat protection circuit, that is, the time when the PNP transistor Q7 operates, the emitter current of the transistor Q7 is supplied from the current flowing through the PNP transistor Q10, and the PNP transistor Q5 is not saturated. Accordingly, the constant current circuit normally operates all the time.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は、集積回路に関し、特に、P−N接合部の温度
上昇による集積回路のP−N接合の破壊を防止する過熱
保護回路に関するものである。
DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to integrated circuits, and more particularly to an overtemperature protection circuit that prevents the P-N junction of an integrated circuit from being destroyed due to an increase in the temperature of the P-N junction. .

従来の技術 第一図は、従来に2ける過熱保護回路の一例を示す回路
図である。第二図に2いて、この過熱保護回路は、電源
端子a、出力端子b1接地端子Cを有し、電源端子aは
抵抗R1を介して定電圧ダイオードQvのアノード側に
接続され、一方定電圧ダイオードQ?のカソード側は接
地端子Cに接続され、抵抗R1と定電圧ダイオードQ9
のアノードの交点は抵抗Rコを介して、 NPN )ラ
ンジスタQコのベースと、NPN )ランジスタQII
のベースと、抵抗RダとPNP )ランジスタQ3のコ
レクタに接続され、NPN)ランジスタQ41のエミッ
タは接地端子ck接続され、NPN )ランジスタQ2
のエミッタは抵抗R3を介して接地端子に接続され、N
PN )ランジスタQコのコレクタは、PNP)ランジ
スタQ/のコレクタベー、<全接続した点に接続され、
PNP)ランジスタQ/のコレクタベースの接続点には
、 PNP )ランジスタQ3゜Qtのベースが接続さ
れ、PNP )ランジスタQ’+ Q3−Q3のエミッ
タはそれぞれ電源端子aに接続されている。かかる定電
流回路を含む基準電圧回路と、抵抗RaとNPN )ラ
ンジスタQ4LのコレクタにNPN )ランジスタQ4
のベースが接続され、前記NPN )ランジスタQ6の
エミッタから抵抗R6を介して接地端子cへ、また、前
記NPN )ランジスタQ6のコレクタカラPNP)ラ
ンジスタQ7のベースと抵抗jとを介して、PNP)ラ
ンジスタQ3のコレクタトPNPトランジスタQ7のエ
ミッタへ接続されている。かかるP−N接合部の温度検
出回路であるNPN )ランジスタQ6と、PNP’)
ランジスタQりのコレクタは、抵抗R7を介して接地端
子Cに接続され、また前記PNP )ランジスタQ7の
コレクタNPN )ランジスタQgのベースに接続され
、NPN )ランジスタQtのエミッタは接地端子Cに
接続され、コレクタは出力端子すとなる。PNP )ラ
ンジスタQり、NPN )ランジスタQrから成る制御
回路で構成されている。
BACKGROUND ART FIG. 1 is a circuit diagram showing an example of a conventional overheat protection circuit. 2 in FIG. 2, this overheating protection circuit has a power supply terminal a, an output terminal b1, and a ground terminal C. The power supply terminal a is connected to the anode side of a constant voltage diode Qv via a resistor R1, while the constant voltage Diode Q? The cathode side of is connected to ground terminal C, and resistor R1 and constant voltage diode Q9
The intersection of the anodes of is connected to the base of NPN ) transistor Q through resistor R, and
The bases of resistors R and PNP) are connected to the collector of transistor Q3, the emitter of NPN) transistor Q41 is connected to the ground terminal ck, and the NPN) transistor Q2 is connected to the base of
The emitter of is connected to the ground terminal via resistor R3, and N
PN) The collector of transistor Q is connected to the collector of transistor Q, < all connected points,
The base of the PNP) transistor Q3°Qt is connected to the connection point of the collector base of the PNP) transistor Q/, and the emitters of the PNP) transistor Q'+Q3-Q3 are each connected to the power supply terminal a. A reference voltage circuit including such a constant current circuit, and a resistor Ra and an NPN transistor Q4L are connected to the collector of the NPN transistor Q4L.
The base of the transistor Q6 is connected to the ground terminal c from the emitter of the NPN transistor Q6 through the resistor R6, and from the base of the NPN transistor Q6 to the ground terminal c through the base of the transistor Q7 and the resistor j. The collector of transistor Q3 is connected to the emitter of PNP transistor Q7. The temperature detection circuit for such a P-N junction includes an NPN) transistor Q6 and a PNP') transistor.
The collector of the transistor Q is connected to the ground terminal C via the resistor R7, the collector of the transistor Q7 is connected to the base of the transistor Qg, and the emitter of the transistor Qt is connected to the ground terminal C. , the collector becomes the output terminal. It consists of a control circuit consisting of a PNP) transistor Qr and an NPN) transistor Qr.

一般に、過熱保護回路は、熱による出力回路の破壊、劣
化を防ぐための保護回路であ妙、過熱保護回路の動作開
始温度は、抵抗の相対比、トランジスタのVBEのオフ
セット等のばらつきも含め、P−N接合部の温度が73
0〜200℃以内で動作するように設定される。
In general, an overheat protection circuit is a protection circuit that prevents destruction and deterioration of the output circuit due to heat. The temperature of the P-N junction is 73
It is set to operate within 0-200°C.

特に、ばらつきの幅を上、下一定とするためには、前述
の動作開始温度のばらつきの中心を773℃に設定する
必要があった。
In particular, in order to keep the width of the variation constant at the top and bottom, it was necessary to set the center of the variation in the above-mentioned operation start temperature to 773°C.

発明が解決しようとする問題点 上述した従来の過熱保護回路の動作について、第二図を
基に説明する。集積回路内部のP−N接合の温度上昇を
PNP )ランジスタQりのP−N接合部であるVBK
により検知し、抵抗RjとNPN )ランジスタロ基の
コレクタ電流l0Q4  によりPNP )ランジスタ
Q7を動作させ、このPNP )ランジスタQ7のコレ
クタ電流ICQ7と抵抗RりによりNPN )ランジス
タQA動作させることにより、出力回路のドライブ電流
をこのNPN )ランジスタQrが引き込み、出力回路
を停止させて集積回路を停止させて集積回路のP−N接
合の破壊を防ぐ。従って下記の(ハ。
Problems to be Solved by the Invention The operation of the above-mentioned conventional overheat protection circuit will be explained based on FIG. The temperature rise of the P-N junction inside the integrated circuit is PNP) VBK is the P-N junction of transistor Q
The output circuit is The NPN transistor Qr draws the drive current, stopping the output circuit and stopping the integrated circuit to prevent the PN junction of the integrated circuit from being destroyed. Therefore, the following (c.

(,2) K テ示’t VB2 トVBKQ、7 f
ON)  が一致した時に過熱保護回路が動作する。
(,2) K te't VB2 tVBKQ, 7 f
ON), the overheat protection circuit operates when they match.

T VBFiQ7 (ON) −7n (10”/Is )
  −−(u)工CQ7=vBEQ8(ON)/R7・
・・・・・・・・・・・・・・・・・(3)VBQ6 
:  NPN )う/ジスタQ基のベース電位(過熱保
護回路基準電圧) VBzQ6: NPN )ランジスタQ6のベースエミ
ッタ電位差 に:ボルツマン定数、q:電荷、T:絶対温度、工s:
飽和電流 従って、従来の過熱保護回路の動作温度は、抵抗定数及
び過熱保護回路の基準電圧であるNPN )ランジスタ
Q6のベース電位VBQ4  で決定され、基準電圧V
BQ b  は下記の(り)式で求められる。
TVBFiQ7 (ON) -7n (10”/Is)
--(u) Engineering CQ7=vBEQ8(ON)/R7・
・・・・・・・・・・・・・・・・・・(3) VBQ6
: NPN ) Base potential of transistor Q group (overheat protection circuit reference voltage) VBzQ6: NPN ) Base-emitter potential difference of transistor Q6: Boltzmann constant, q: electric charge, T: absolute temperature, s:
Saturation current Therefore, the operating temperature of the conventional overheat protection circuit is determined by the resistance constant and the base potential VBQ4 of the NPN transistor Q6, which is the reference voltage of the overheat protection circuit, and the reference voltage V
BQ b is determined by the following formula (ri).

(、α= AEQ2/AEQ4) ΔVBE = VBEQ4−VBEQ2  ・・・ ・
・・・・・・・・・  (5)ここで、PNP )ラン
ジスタQ5は、@度検出回路と制限回路のNPN )ラ
ンジスタQJ、Qざ及ヒPNP)ランジスタQ7が動作
出来る電流を供給している。また、このPNP )ラン
ジスタQ3はPNP )ランジスタQ/、QJとで定電
流回路を構成している。従って。
(, α= AEQ2/AEQ4) ΔVBE = VBEQ4−VBEQ2 ・・・ ・
・・・・・・・・・ (5) Here, PNP) transistor Q5 supplies the current that enables transistor Q7 to operate. There is. Further, this PNP transistor Q3 constitutes a constant current circuit with the PNP transistors Q/ and QJ. Therefore.

過熱保護回路が動作する迄は、PNP )ランジスタQ
りが動作していない為にPNP )ランジスタQ3のコ
レクタ電流は過剰となり、 PNP )ランジスタQt
が飽和してしまい、定電流回路Q3が正常動作しない。
Until the overheat protection circuit operates, the PNP) transistor Q
Since the transistor Q3 is not operating, the collector current of the PNP transistor Q3 becomes excessive, and the collector current of the PNP transistor Qt becomes excessive.
is saturated, and the constant current circuit Q3 does not operate normally.

つまりPNP )ランジスタQ5の飽和により、トラン
ジスタQrのベース電流が増加して定電流回路のPNP
トランジスタQ3のコレクタ電流が減少するこれだ伴な
い、VH2(抵抗Reの両端電位差)も減少し、上記(
仏)弐く示す様に、基準電圧VBQ b  が増加し、
前記(ハ式に示すVB2が増加し、過熱保護回路動作温
度が設定温度より下がる。つまり、定電流回路が正常動
作していないので、基準となるバイアスが不安定となり
、過熱保護回路動作@度設定が非常に木部となる欠点が
ある。また、過熱保護回路動作温度のばらつきは、抵抗
のばらつき及びトランジスタのVBKのばらつきとPN
P )ランジスタQ5の飽和状態でのβ(= IC/I
B )のばら9きで決1るので、ばらつき幅が広いとい
う欠点があった。
In other words, due to the saturation of the transistor Q5, the base current of the transistor Qr increases and the PNP of the constant current circuit increases.
As the collector current of transistor Q3 decreases, VH2 (potential difference across resistor Re) also decreases, and the above (
France) As shown in Figure 2, the reference voltage VBQ b increases,
VB2 shown in equation (C) increases and the overheat protection circuit operating temperature falls below the set temperature.In other words, since the constant current circuit is not operating normally, the reference bias becomes unstable and the overheat protection circuit operates at There is a drawback that the settings are very difficult to set.Also, the variation in the operating temperature of the overheat protection circuit is due to the variation in resistance, the variation in VBK of the transistor, and the PN
P ) β in the saturated state of transistor Q5 (= IC/I
Since it is determined by the variation of B), there is a drawback that the range of variation is wide.

本発明は従来の上記実情に鑑みてなされたものであり、
鎧って本発明の目的は、従来の技術に内在する上記欠点
を解消することを可能とした新規な加熱保護回路を提供
することにある。
The present invention has been made in view of the above-mentioned conventional situation,
SUMMARY OF THE INVENTION An object of the present invention is to provide a novel overheating protection circuit which makes it possible to eliminate the above-mentioned drawbacks inherent in the prior art.

問題点を解決するための手段 上記目的を達成する為に、本発明に係る過熱保護回路は
P−N接合部の温度を検出する温度検出回路と、前記温
度検出回路の出力により駆動される制御回路と、前記温
度検出回路の基準バイアスを設定する定電流回路を含む
基準電圧回路と、前記定電流回路の飽和を防止するため
のPNP )ランジスタQioとを具備して構成される
Means for Solving the Problems In order to achieve the above object, the overheat protection circuit according to the present invention includes a temperature detection circuit for detecting the temperature of the P-N junction, and a control driven by the output of the temperature detection circuit. A reference voltage circuit including a constant current circuit for setting a reference bias of the temperature detection circuit, and a PNP transistor Qio for preventing saturation of the constant current circuit.

実施例 次だ本発明をその好ましい一実施例について図面を参照
して具体的〈説明する。
EXAMPLE Next, a preferred embodiment of the present invention will be specifically explained with reference to the drawings.

第1図は本発明に係る過熱保護回路の一実施例を示す回
路構成図である。
FIG. 1 is a circuit diagram showing an embodiment of an overheat protection circuit according to the present invention.

第1図を参照するに1参照符号Q/、Qコ、Q3゜Q4
’、 Q’+ Q+、 Q?及びQ tOはトランジス
タ、Ri。
Referring to Figure 1, 1 reference symbol Q/, Qko, Q3゜Q4
', Q'+ Q+, Q? and Q tO is a transistor, Ri.

RJ、RJ、R弘、 RA、 RA、 R7け抵抗、Q
9は定電圧ダイオード、aは電源端子、bは出力端子、
Cは接地端子をそれぞれ示す。トランジスタQ/ 。
RJ, RJ, R Hiro, RA, RA, R7 resistor, Q
9 is a constant voltage diode, a is a power supply terminal, b is an output terminal,
C indicates a ground terminal. Transistor Q/.

Qコ@Q3*Qe、  及び抵抗R,y、Reにて基準
電圧回路が構成され、抵抗RsVcより温度検出を行う
温度検出回路は、トランジスタQs 、 QA 、 Q
10及び抵抗R1r、 Rh 、 R?  Kて構成さ
れ、この温度検出回路により、制御回路であるQ7.Q
ざを駆動する。
A reference voltage circuit is composed of Qco@Q3*Qe and resistors R, y, and Re, and the temperature detection circuit that detects temperature from resistor RsVc is composed of transistors Qs, QA, and Q.
10 and resistors R1r, Rh, R? Q7.K, which is a control circuit, is configured by this temperature detection circuit. Q
drive the vehicle.

尚、前記第一図と同一記号同一番号の素子は第一図と同
一素子を示す。また、過熱保護回路としての基本的動作
は、前記第一図に示す従来回路と同じであり、前記(ハ
〜(4)式で決まる。
Note that elements having the same symbols and numbers as those in FIG. 1 above indicate the same elements as in FIG. Further, the basic operation of the overheat protection circuit is the same as that of the conventional circuit shown in FIG.

ここで第1図に示す本発明の過熱保護回路の場合には、
P−N接合温度が過熱保護回路動作設定温度に達する迄
はPNP )ランジスタQ/<7のエミッタ電流は、定
電流であるPNP )ランジスタQrのコレクタ電流か
ら、基準電圧vBEQ6と抵抗R6で決撞るNPN )
ランジスタQ乙のコレクタ電流を引いたり残りの電流と
なり、過熱保護回路の動作時、つますPNP )ランジ
スタQ7が動作した時には、トランジスタQ7のエミッ
タ電流は前記PNP )ランジスタQ loに流れてい
た電流より供給される為に、定電流回路であるPNP 
)ランジスタQ3は飽和しない。
Here, in the case of the overheat protection circuit of the present invention shown in FIG.
The emitter current of transistor Q/<7 is determined by the reference voltage vBEQ6 and resistor R6 from the collector current of transistor Qr. (NPN)
When transistor Q7 (PNP) operates, the emitter current of transistor Q7 is greater than the current flowing through transistor Qlo. In order to be supplied, PNP which is a constant current circuit
) Transistor Q3 does not saturate.

従って、定電流回路は常に正常動作している。Therefore, the constant current circuit always operates normally.

発明の詳細 な説明したように、本発明によれば、PNP )ランジ
スタを従来回路に追加することにより、P−N接合温度
が過熱保護回路の動作設定温度に達する迄の定電流回路
の余剰電流を前記PNP )ランジスタQ 10が吸い
込むことによゆ側路によるバイパスを作り定電流回路を
常に正常動作させ、過熱保護回路の動作温度設定が容易
に出来、また、設定温度のばらつき幅も抵抗のばらつき
及びトランジスタのVBxのばらつきのみで決着る為に
、従来例よりもばらつき因子が減らせられるので、設定
温度のばらつき幅も狭くすることができる効果が得られ
る。
As described in detail, according to the present invention, by adding a PNP transistor to a conventional circuit, the surplus current of the constant current circuit is reduced until the P-N junction temperature reaches the operating set temperature of the overheat protection circuit. The above PNP) transistor Q10 creates a bypass with a bypass, which allows the constant current circuit to always operate normally, making it easy to set the operating temperature of the overheating protection circuit. Since the determination is made only by the variation and the variation in VBx of the transistor, the variation factor can be reduced compared to the conventional example, and the effect of narrowing the range of variation in the set temperature can be obtained.

【図面の簡単な説明】[Brief explanation of the drawing]

第7図は本発明に係る過熱保護回路の一実施例を示す回
路構成図、第一図は従来の過熱保護回路図である。
FIG. 7 is a circuit configuration diagram showing an embodiment of the overheat protection circuit according to the present invention, and FIG. 1 is a conventional overheat protection circuit diagram.

Claims (1)

【特許請求の範囲】[Claims] P−N接合部の温度を検出する温度検出回路と、前記温
度検出回路の出力により駆動される制御回路と、前記温
度検出回路の基準バイアスを設定するための定電流回路
とを含む基準電圧回路において、前記温度検出回路の動
作開始前は前記定電流回路の電流を前記温度検出回路か
ら側路にバイパスする手段を持つていることを特徴とす
る過熱保護回路。
a reference voltage circuit that includes a temperature detection circuit that detects the temperature of the P-N junction, a control circuit that is driven by the output of the temperature detection circuit, and a constant current circuit that sets a reference bias for the temperature detection circuit; The overheat protection circuit according to the invention, further comprising means for bypassing the current of the constant current circuit from the temperature detection circuit to a bypass circuit before the temperature detection circuit starts operating.
JP24857086A 1986-10-20 1986-10-20 Overheat protection circuit Expired - Fee Related JPH0671060B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24857086A JPH0671060B2 (en) 1986-10-20 1986-10-20 Overheat protection circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24857086A JPH0671060B2 (en) 1986-10-20 1986-10-20 Overheat protection circuit

Publications (2)

Publication Number Publication Date
JPS63102248A true JPS63102248A (en) 1988-05-07
JPH0671060B2 JPH0671060B2 (en) 1994-09-07

Family

ID=17180104

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24857086A Expired - Fee Related JPH0671060B2 (en) 1986-10-20 1986-10-20 Overheat protection circuit

Country Status (1)

Country Link
JP (1) JPH0671060B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7310213B2 (en) 2003-09-26 2007-12-18 Matsushita Electric Industrial Co., Ltd. Semiconductor device provided with overheat protection circuit and electronic circuit using the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7310213B2 (en) 2003-09-26 2007-12-18 Matsushita Electric Industrial Co., Ltd. Semiconductor device provided with overheat protection circuit and electronic circuit using the same
CN100466253C (en) * 2003-09-26 2009-03-04 松下电器产业株式会社 Semiconductor device provided with overheat protection circuit and electronic circuit using the same

Also Published As

Publication number Publication date
JPH0671060B2 (en) 1994-09-07

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