JPS6297791A - Laser marking device - Google Patents

Laser marking device

Info

Publication number
JPS6297791A
JPS6297791A JP60237449A JP23744985A JPS6297791A JP S6297791 A JPS6297791 A JP S6297791A JP 60237449 A JP60237449 A JP 60237449A JP 23744985 A JP23744985 A JP 23744985A JP S6297791 A JPS6297791 A JP S6297791A
Authority
JP
Japan
Prior art keywords
worked
workpiece
laser beam
laser
convex lens
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60237449A
Other languages
Japanese (ja)
Inventor
Koichiro Toshima
都島 宏一郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP60237449A priority Critical patent/JPS6297791A/en
Publication of JPS6297791A publication Critical patent/JPS6297791A/en
Pending legal-status Critical Current

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  • Laser Beam Processing (AREA)

Abstract

PURPOSE:To execute with a high accuracy the marking of a semiconductor wafer, a glass plate, etc., by condensing a laser beam which has transmitted through an object to be worked, to the reverse side of the object to be worked, and also, to the surface, too. CONSTITUTION:In a laser beam 3a which has been emitted from a laser oscillator 1, a laser beam 3b which has transmitted through an object to be worked 2 is led to a concave reflecting mirror 6 which has been placed at the back of the object to be worked, and its reflected light is condensed to the reverse side of the object to be worked 2. On the other hand, by using an observation use optical device 7, marking is executed with a high accuracy by observing a point Q of the surface of the object to be worked 2. Also, on the upper side of the object to be worked 2, a convex lens 8 of a comparatively small diameter is provided, also a convex lens 9 and a plane mirror 10 are provided on the lower side of the object to be worked 2, and a mark is given simultaneously to the surface and the reverse side of the object to be worked 2. In this way, marking can be executed efficiently.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体ウェハー、ガラス板等のような板状の被
加工物の少なくとも裏面に位置合わせ用のマークあるい
はロフト番号等のマークをレーザビームによって付与す
るレーザマーキング装置に関するものである。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention uses a laser beam to mark alignment marks or loft numbers on at least the back surface of a plate-shaped workpiece such as a semiconductor wafer or a glass plate. The present invention relates to a laser marking device that applies laser marking using a laser marking device.

〔従来の技術〕[Conventional technology]

現在、マーキング等に用いられるレーザとしてはYAG
レーザが最も普及している。従来から、このYAGレー
ザを用いて半導体ウエノ1−等の被加工物へマークを付
与するレーザマーキング装置は既に広く知られている。
Currently, YAG lasers are used for marking, etc.
Lasers are the most popular. Conventionally, a laser marking device that uses this YAG laser to apply a mark to a workpiece such as a semiconductor wafer 1- is already widely known.

そのうちでよく知られている装置としては、被加工物の
裏面へのマークの付与を、レーザビームを所定の方向へ
導く光学装置の光路切り換えによって行なう装置が挙げ
られる。
Among these, a well-known device is one that applies marks to the back surface of a workpiece by switching the optical path of an optical device that guides a laser beam in a predetermined direction.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

ところで、従来のレーザマーキング装置における光学装
置の光路切り換えの手段によっては、被加工物の表面と
裏面の同一位置に高精度でマークを付与することは極め
て困難であった。
By the way, depending on the optical path switching means of the optical device in the conventional laser marking apparatus, it is extremely difficult to apply a mark at the same position on the front and back surfaces of the workpiece with high precision.

本発明の目的は、被加工物の表面と裏面の同一位置に高
精度でしかも容易にマークを付与することのできるレー
ザマーキング装置を提供するにある。
SUMMARY OF THE INVENTION An object of the present invention is to provide a laser marking device that can easily and accurately mark the same position on the front and back surfaces of a workpiece.

〔問題点を解決するための手段〕[Means for solving problems]

本発明は、被加工物を部分的に透過する波長のレーザビ
ームを発生するレーザ発振器と、被加工物を透過したレ
ーザビームを被加工物裏面に集光させ得る光学装置を備
えた構成とし、もって上述した目的を達成せんとするも
のである。
The present invention has a configuration including a laser oscillator that generates a laser beam with a wavelength that partially passes through the workpiece, and an optical device that can focus the laser beam that has passed through the workpiece on the back surface of the workpiece, This aims to achieve the above-mentioned purpose.

〔実施例〕〔Example〕

以下、図に示す実施例を用いて本発明の詳細な説明する
Hereinafter, the present invention will be explained in detail using embodiments shown in the drawings.

第1図は本発明に係わるレーザマーキング装置の一実施
例を示す概略構成図である。レーザ発振器1は、被加工
物(半導体ウェハー、ガラス板等)2に対して部分的に
透過する波長のレーザビーム3を発生するよう構成され
ている。そして、このレーザ発振器1から出射されたレ
ーデビーム3は、ビームエクスパンダ装置4によって拡
大され、パワー密度の低い状態で被加工物2側に導かれ
るようになっている。これをさらに詳述すると、レーザ
発振器1から出射されたレーザビーム3は、ビームエク
スパンダ装置4を構成する凹レンズ4as凸レンズ4b
を順次透過した後、パワー密度の低いレーザビーム3a
となってグイクロイックミラー5側へ進行する。そして
、このグイクロイックミラー5にて90度反射された後
、被加工物2側に導かれるようになっている。
FIG. 1 is a schematic diagram showing an embodiment of a laser marking device according to the present invention. A laser oscillator 1 is configured to generate a laser beam 3 having a wavelength that partially transmits through a workpiece 2 (semiconductor wafer, glass plate, etc.). The Radhe beam 3 emitted from this laser oscillator 1 is expanded by a beam expander device 4 and guided to the workpiece 2 side in a state of low power density. To explain this in more detail, the laser beam 3 emitted from the laser oscillator 1 is transmitted through concave lenses 4as and convex lenses 4b constituting the beam expander device 4.
After successively passing through the laser beam 3a, the laser beam 3a with low power density
Then, it moves towards the Guicroic Mirror 5 side. After being reflected at 90 degrees by this guichroic mirror 5, it is guided to the workpiece 2 side.

レーザビーム3aのうち、被加工物2を透過したレーザ
ビーム3bは、まず被加工物2の背後に配置された凹面
反射鏡6に当たり、反射されて被加工物2の裏面の点P
に集光するようになっている。これによって、この点P
にドツト状のマークが付与されることになる。例えば、
被加工物2が厚さ0.3mmのシリコンウェハーで、レ
ーザビームの波長が1.06μmの場合には、約25%
のレーザビームがシリコンウェハーを透過することにな
る。なお、ビームエクスパンダ装置4、グイクロイック
ミラー5および凹面反射鏡6にて光学装置は構成されて
いる。
Of the laser beams 3a, the laser beams 3b that have passed through the workpiece 2 first hit the concave reflecting mirror 6 placed behind the workpiece 2, and are reflected to a point P on the back surface of the workpiece 2.
The light is focused on the By this, this point P
A dot-shaped mark will be added to the . for example,
When the workpiece 2 is a silicon wafer with a thickness of 0.3 mm and the wavelength of the laser beam is 1.06 μm, approximately 25%
The laser beam will pass through the silicon wafer. Note that the optical device is composed of a beam expander device 4, a gicroic mirror 5, and a concave reflecting mirror 6.

一方、観測用光学装置7はグイクロイックミラー5の背
後に配設されており、グイクロイックミラー5を介して
被加工物2の表面の点Qを観測している。ところで、点
Pのマークの位置は丁度点Qの裏面にあたり、点Qの位
置にマークを付与すれば、これによって被加工物2の表
裏両面へのパターン作成の目印が得られることになる。
On the other hand, the observation optical device 7 is disposed behind the guichroic mirror 5 and observes the point Q on the surface of the workpiece 2 via the guichroic mirror 5. Incidentally, the position of the mark at point P is exactly on the back side of point Q, and if the mark is provided at the position of point Q, a mark for pattern creation on both the front and back surfaces of the workpiece 2 can be obtained.

このように、被加工物2の表裏両面の同一位置に高精度
でしかも容易にマークを付与することができるようにな
ったので、例えば被加工物2の表裏両面から回路を形成
させるような半導体素子の製造工程において、表裏両面
でのマスクの目合わせの精度を向上させることができる
だけでなく、製造工程の短縮をも可能にできる。
In this way, it has become possible to mark the same position on both the front and back sides of the workpiece 2 with high precision and with ease. In the device manufacturing process, it is possible not only to improve the accuracy of mask alignment on both the front and back sides, but also to shorten the manufacturing process.

第2図は本発明に係わるレーザマーキング装置の他の実
施例を示すものである。本実施例においては、被加工物
2の上方側に比較的小径の凸レンズ8を配設すると共に
下方側に凸レンズ8より大径の凸レンズ9を配設し、さ
らにこの凸レンズ9の下方に反射鏡lOを配設した構成
としたものである。なお、第2図において、図示は省略
しであるが、レーザ発振器1、ビームエクスパンダ装置
4、グイクロイックミラー5は第1図と同様に配設され
ているものとする。
FIG. 2 shows another embodiment of the laser marking device according to the present invention. In this embodiment, a convex lens 8 having a relatively small diameter is disposed above the workpiece 2, a convex lens 9 having a larger diameter than the convex lens 8 is disposed below the workpiece 2, and a reflecting mirror is disposed below the convex lens 9. This is a configuration in which lO is provided. Although not shown in FIG. 2, it is assumed that the laser oscillator 1, beam expander device 4, and gicroic mirror 5 are arranged in the same manner as in FIG. 1.

上述したような構成のレーザマーキング装置に右いて、
拡大されたレーザビーム3aはその一部分が凸レンズ7
によって被加工物2の表面の点Q′に集光し、この点Q
′にマークが付与される。これと同時に、凸レンズ8以
外の空間を通過したレーザビーム3aはその一部が被加
工物2を透過し、この透過したレーザビーム3bが凸レ
ンズ9を透過した後反射鏡10に到達する。そして、こ
の反射鏡IOにて反射されたレーザビーム3bはさらに
凸レンズ9を透過した後、被加工物2の裏面の点P′に
集光され、この点P′上にマークを付与する。このよう
に、本実施例においては、被加工物2の表裏面に同時に
マークを付与することが可能となる。
When using a laser marking device configured as described above,
A portion of the expanded laser beam 3a passes through the convex lens 7.
The light is focused on a point Q' on the surface of the workpiece 2, and this point Q
' is marked. At the same time, part of the laser beam 3a that has passed through the space other than the convex lens 8 is transmitted through the workpiece 2, and the transmitted laser beam 3b is transmitted through the convex lens 9 and then reaches the reflecting mirror 10. The laser beam 3b reflected by this reflecting mirror IO further passes through a convex lens 9, and then is focused on a point P' on the back surface of the workpiece 2, and a mark is placed on this point P'. In this way, in this embodiment, marks can be applied to both the front and back surfaces of the workpiece 2 at the same time.

なお、被加工物2の表面が砂目の状態でも透過後のレー
ザビーム3bの拡がり角はあまり大きくならず、凹面反
射鏡6又は反射鏡1oの径を若干大きくすることで十分
なレーザビーム3bを被加工物2の裏面に集光させるこ
とができる。
Note that even if the surface of the workpiece 2 is grainy, the divergence angle of the laser beam 3b after passing through the workpiece 2 does not become very large, and by slightly increasing the diameter of the concave reflecting mirror 6 or the reflecting mirror 1o, the laser beam 3b can be sufficiently widened. can be focused on the back surface of the workpiece 2.

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明に係わるレーザマーキング装
置によれば、被加工物の表面と裏面の同一位置にマスク
の目合わせ等に利用できるマークを高精度でしかも容易
に付与できるので、例えは被加工物の表裏両面から回路
を形成させるような半導体素子の製造工程において、被
加工物の両面でのマスクの目合わせの精度を向上させる
ことができるばかりでなく、製造工程の短縮化を図るこ
ともできるという極めて優れた効果を有する。
As explained above, according to the laser marking device according to the present invention, marks that can be used for mask alignment etc. can be easily applied with high precision at the same position on the front and back surfaces of the workpiece. In the manufacturing process of semiconductor elements in which circuits are formed from both the front and back sides of the workpiece, it is possible to not only improve the accuracy of mask alignment on both sides of the workpiece, but also to shorten the manufacturing process. It also has an extremely excellent effect.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明に係わるレーザマーキング装置の一実施
例を示す概略構成図、第2図は本発明に係わるレーザマ
ーキング装置の他の実施例を示す要部概略構成図である
。 ■・・・・・・レーザ発振器装置、 2・・・・・・被加工物、 3.3a、3b・・・・・・レーザビーム、4・・・・
・・ビームエクスパンタ装置、5・・・・・・グイクロ
イックミラー、6・・・・・・凹面反射鏡、 7・・・・・・観測用光学装置、 8.9・・・・・・凸レンズ、 IO・・・・・パ反射鏡。 出  願  人 日本電気株式会社 代  理  人
FIG. 1 is a schematic diagram showing one embodiment of a laser marking device according to the present invention, and FIG. 2 is a schematic diagram showing a main part of another embodiment of the laser marking device according to the present invention. ■... Laser oscillator device, 2... Workpiece, 3.3a, 3b... Laser beam, 4...
... Beam expander device, 5... Gicroic mirror, 6... Concave reflector, 7... Observation optical device, 8.9...・Convex lens, IO...Parallel reflector. Applicant: NEC Corporation Representative

Claims (1)

【特許請求の範囲】 1、被加工物に対して部分的に透過する波長のレーザビ
ームを発生するレーザ発振器と、このレーザ発振器から
のレーザビームを被加工物側へ導く光学装置を備えたレ
ーザマーキング装置において、前記光学装置は、被加工
物を透過したレーザビームを前記被加工物裏面に集光さ
せ得るよう構成されたことを特徴とするレーザマーキン
グ装置。 2、前記光学装置は、レーザ発振器からのレーザビーム
を被加工物の表面に集光させ得るレンズを有して成るこ
とを特徴とする特許請求の範囲第1項記載のレーザマー
キング装置。
[Claims] 1. A laser that includes a laser oscillator that generates a laser beam with a wavelength that partially transmits through the workpiece, and an optical device that guides the laser beam from the laser oscillator toward the workpiece. A laser marking device, wherein the optical device is configured to focus a laser beam transmitted through the workpiece onto the back surface of the workpiece. 2. The laser marking device according to claim 1, wherein the optical device includes a lens capable of focusing a laser beam from a laser oscillator onto the surface of the workpiece.
JP60237449A 1985-10-25 1985-10-25 Laser marking device Pending JPS6297791A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60237449A JPS6297791A (en) 1985-10-25 1985-10-25 Laser marking device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60237449A JPS6297791A (en) 1985-10-25 1985-10-25 Laser marking device

Publications (1)

Publication Number Publication Date
JPS6297791A true JPS6297791A (en) 1987-05-07

Family

ID=17015506

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60237449A Pending JPS6297791A (en) 1985-10-25 1985-10-25 Laser marking device

Country Status (1)

Country Link
JP (1) JPS6297791A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01251689A (en) * 1988-03-30 1989-10-06 Tokai Rika Co Ltd Simultaneous pattern formation on both surfaces of coated substrate
JP2004503832A (en) * 2000-06-15 2004-02-05 スリーエム イノベイティブ プロパティズ カンパニー Multiphoton absorption method using patterned light
JP2004503831A (en) * 2000-06-15 2004-02-05 スリーエム イノベイティブ プロパティズ カンパニー Multipath multiphoton absorption method and apparatus
US7014988B2 (en) 2000-06-15 2006-03-21 3M Innovative Properties Company Multiphoton curing to provide encapsulated optical elements
US7026103B2 (en) 2000-06-15 2006-04-11 3M Innovative Properties Company Multicolor imaging using multiphoton photochemical processes
US7060419B2 (en) 2000-06-15 2006-06-13 3M Innovative Properties Company Process for producing microfluidic articles
US7091255B2 (en) 2000-06-15 2006-08-15 3M Innovative Properties Company Multiphoton photosensitization system

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01251689A (en) * 1988-03-30 1989-10-06 Tokai Rika Co Ltd Simultaneous pattern formation on both surfaces of coated substrate
JP2004503832A (en) * 2000-06-15 2004-02-05 スリーエム イノベイティブ プロパティズ カンパニー Multiphoton absorption method using patterned light
JP2004503831A (en) * 2000-06-15 2004-02-05 スリーエム イノベイティブ プロパティズ カンパニー Multipath multiphoton absorption method and apparatus
US7014988B2 (en) 2000-06-15 2006-03-21 3M Innovative Properties Company Multiphoton curing to provide encapsulated optical elements
US7026103B2 (en) 2000-06-15 2006-04-11 3M Innovative Properties Company Multicolor imaging using multiphoton photochemical processes
US7060419B2 (en) 2000-06-15 2006-06-13 3M Innovative Properties Company Process for producing microfluidic articles
US7091255B2 (en) 2000-06-15 2006-08-15 3M Innovative Properties Company Multiphoton photosensitization system

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