JPS6295515A - Optical gate - Google Patents

Abstract

PURPOSE:To form an optical gate of a larger length and larger size by successively laminating a transparent conductive film and polycrystalline garnet film on a glass substrate. CONSTITUTION:ITO2 is first uniformly formded as the transparent conductive film and thereafter the ITO film 2 is patterned by a photolithographic method in such a manner that the many rectangular shaped films with the long sides in contact with each other array at prescribed intervals. An amorphous film 4 corresponding to Bi1.8Gd1.0Fe3.8Al1.4O12 is thereafter uniformly formed on the glass substrate 3 provided with the films 2. The amorphous film 4 is then removed by etching except part in the central parts on the patterned ITO films 2. The amorphous film is crystallized to the garnet film 1 when the glass substrate 3 having the amorphous film 4 is cooled after heating in air. ArCu alloy films 5 having such intervals at which the films are continuous with the patterned ITO films 2 are thereafter provided on the parts except the garnet film 3 parts. The larger area is thereby easily obtd. and the optical gate array is formed.

Description

DETAILED DESCRIPTION OF THE INVENTION [Industrial Application] The present invention relates to an optical gate, and more particularly to an optical gate suitable for use in an optical printer, which has high productivity and can be made large.

[Conventional technology]

Conventionally, this type of optical gate is a G gate as shown in Fig. 11.
GG (gadolinium gallium gar)
Net) is known which consists of a single crystal substrate (4'J), a single crystal garnet film (≠l) formed on the substrate, and a transparent conductive film (ψ2) formed on the single crystal garnet film. ing. (For example, Nikkei Electronics School 3/1
2.2. /j) [Problems to be solved by the invention] Although the above optical gate has the advantage of having a low power consumption of 0.5 μJ and being able to operate at a high speed of less than 1 μS, it requires the use of a GGG-based crystal as the substrate. When using a large number of optical gates lined up like a gate array, it is difficult to obtain a long optical gate array with a single one, so it is necessary to connect them together. There was a problem with increasing the size. Furthermore, the single crystal garnet grown on the GGG substrate is generally as thick as 0~≠, ottm, and there is a problem that defects are likely to occur on the side surfaces of the transparent conductive film that covers the top and side surfaces of the single crystal garnet. Ta.

[Means for solving problems]

In order to solve the above problems, the present invention constructs an optical gate by sequentially laminating a transparent conductive film and a polycrystalline garnet film on a glass substrate.

The transparent conductive film formed on the glass substrate is a commonly used 5n02. 30~ioo of indium tin oxide etc.
A material with a thickness of nm can be used. Further, these transparent conductive films can be created by a vapor deposition method, a sputtering method, a dipping method, or the like.

A method for forming a polycrystalline garnet film on the transparent conductive film is to use a sputtering method to directly or indirectly form a Bi-substituted rare earth iron garnet film (for example, if the composition of the oxide deposited on the substrate is Bi■Ro (Fe, M)
◎O:L2 (RAM, Sm or rare earth elements and combinations thereof, M: trivalent atoms or combinations of atoms that have a valence equivalent to trivalent, 80≦[stock]≦2.5,2 ．．
5≦■＋■≦J, j protection, 5≦◎≦5.3) A crystalline film is directly created by sputtering using a target, or an amorphous film having the composition is once created and then heat treated. method to form a crystalline film) etc. can be used.

In the optical gate of the present invention, a transparent conductive film for heating the polycrystalline garnet film is provided on the 7-rat surface between the polycrystalline garnet film and the glass substrate. A transparent conductive film may be provided.

When transparent conductive films are provided on both sides of the polycrystalline garnet film, the time required for heating the polycrystalline garnet film can be reduced compared to the case of unidirectional heating.

As the polycrystalline garnet film of the present invention, it is preferable to use a mono-substituted rare earth iron garnet film having a large rotation angle of 7 Arade per unit thickness, and a film that can obtain a rotation angle of 7 Arade per unit thickness, and A thickness of /~4Z11 m is preferable so that there are fewer disconnections when making incisions in the film and uniformly covering the conductive film thereon.

[For production]

Since the optical gate of the present invention uses a glass substrate, GGG
Unlike substrates, it has good productivity and can be made larger. Furthermore, since the transparent conductive film is provided on the glass substrate, there is less disconnection of the transparent conductive film, improving productivity and reliability.

〔Example〕

Example 1 An example of the present invention will be described based on FIGS. 1 and 2. First, an indium tin oxide film (hereinafter abbreviated as ITO film) (2) with a thickness of about ronm was uniformly formed as a transparent conductive film on a glass substrate (3) measuring 7 Q cm in length and 7 Q cm in width by sputtering, and then The ITO film (2) was patterned by photolithography so that a large number of rectangles measuring 70 μm long and 30 μm wide were lined up at intervals of 100 μm with their long sides touching. Thereafter, Bil, BGdl, 0 were deposited on the glass substrate (3) with this ITO film (2) by sputtering
An amorphous film (4) having a thickness of about 211 m and corresponding to Fe3,8AA'1.4012 was uniformly formed. Then the amorphous film (
4) was removed by etching leaving a 70 μm square area in the center of the patterned ITO film (2) soil. After that, the glass substrate (3) with the amorphous film (4) was placed in the air for 630"
The mixture was heated at C for 5 hours and then cooled. The amorphous film was crystallized by the heating to become a garnet film (1). After that, 7 layers that are continuous with the patterned ITO film (2) are
An ArQu alloy film (5) having a spacing of 00 μm was provided on the outside of the garnet film (3).

The angle of rotation of the Qsenbon optical gate is more than 20 degrees with respect to the light beam with a wavelength of s o nm, and it can be reversed by applying an external magnetic field by applying current to both ends of the ArCu alloy coating (5). was also confirmed. Also, the time required for the above reversal is 10
μS was sufficient. No breakage or the like was observed throughout the anti-glass plate.

Example 2 A garnet film (IL) was prepared in the same manner as in Example 1 until the crystallization of the amorphous film (4). A sputtering method was further applied on the garnet film (1) of the glass substrate (3) with the ITO film (2). An ITO film (6) with a thickness of about jOnm was created uniformly using the above method.Then, it was patterned to leave the same shape as the underlying ITO film (2), and then an ArCu alloy film (5) was created in the same manner as in the example.

The time required for reversing the optical gate was 5 μs, which was faster than in the example.

〔Effect of the invention〕

can do.

Furthermore, transparent conductive films can be provided on both sides of the garnet film, and the time required for inversion can be shortened.

[Brief explanation of drawings]

FIG. 1 is a cross-sectional view of the optical gate prepared in Example/.
FIG. 2 is a plan view of the same. FIG. 3 is a sectional view of the optical gate prepared in Example 2, and FIG. ψ is a sectional view of a conventional optical gate. Figure 1 Figure 2

Claims (1)

[Scope of Claims] [1] An optical gate in which a transparent conductive film (2) and a polycrystalline garnet film (1) are sequentially laminated on a glass substrate (3). [2] A transparent conductive film (
6). The light gate according to claim 1, wherein the light gate is provided with: [3] The optical gate according to claim 1 or 2, wherein the polycrystalline garnet film (a) is a Bi-substituted rare earth iron garnet film having a thickness of 1.0 to 4 μm.