JPS629321Y2 - - Google Patents
Info
- Publication number
- JPS629321Y2 JPS629321Y2 JP1983033472U JP3347283U JPS629321Y2 JP S629321 Y2 JPS629321 Y2 JP S629321Y2 JP 1983033472 U JP1983033472 U JP 1983033472U JP 3347283 U JP3347283 U JP 3347283U JP S629321 Y2 JPS629321 Y2 JP S629321Y2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- cooling plate
- cooling
- rod
- back surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000001816 cooling Methods 0.000 claims description 45
- POIUWJQBRNEFGX-XAMSXPGMSA-N cathelicidin Chemical compound C([C@@H](C(=O)N[C@@H](CCCNC(N)=N)C(=O)N[C@@H](CCCCN)C(=O)N[C@@H](CO)C(=O)N[C@@H](CCCCN)C(=O)N[C@@H](CCC(O)=O)C(=O)N[C@@H](CCCCN)C(=O)N[C@@H]([C@@H](C)CC)C(=O)NCC(=O)N[C@@H](CCCCN)C(=O)N[C@@H](CCC(O)=O)C(=O)N[C@@H](CC=1C=CC=CC=1)C(=O)N[C@@H](CCCCN)C(=O)N[C@@H](CCCNC(N)=N)C(=O)N[C@@H]([C@@H](C)CC)C(=O)N[C@@H](C(C)C)C(=O)N[C@@H](CCC(N)=O)C(=O)N[C@@H](CCCNC(N)=N)C(=O)N[C@@H]([C@@H](C)CC)C(=O)N[C@@H](CCCCN)C(=O)N[C@@H](CC(O)=O)C(=O)N[C@@H](CC=1C=CC=CC=1)C(=O)N[C@@H](CC(C)C)C(=O)N[C@@H](CCCNC(N)=N)C(=O)N[C@@H](CC(N)=O)C(=O)N[C@@H](CC(C)C)C(=O)N[C@@H](C(C)C)C(=O)N1[C@@H](CCC1)C(=O)N[C@@H](CCCNC(N)=N)C(=O)N[C@@H]([C@@H](C)O)C(=O)N[C@@H](CCC(O)=O)C(=O)N[C@@H](CO)C(O)=O)NC(=O)[C@H](CC=1C=CC=CC=1)NC(=O)[C@H](CC(O)=O)NC(=O)CNC(=O)[C@H](CC(C)C)NC(=O)[C@@H](N)CC(C)C)C1=CC=CC=C1 POIUWJQBRNEFGX-XAMSXPGMSA-N 0.000 claims description 2
- 239000000110 cooling liquid Substances 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 26
- 239000010408 film Substances 0.000 description 8
- 230000008020 evaporation Effects 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000007781 pre-processing Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Description
【考案の詳細な説明】
本考案は半導体の製造に使用されるシリコンウ
エハ等を冷却するウエハ冷却装置に関する。従来
この種ウエハの表面にレジスト膜、Al膜等を形
成したのちさらにその表面に薄膜を成膜する場合
があるが、該下地レジスト膜等は成膜に伴なうウ
エハ温度の上昇で溶解したり或は成膜Al膜等は
白濁粗面化する不都合を生じ易い。そのためバツ
チシステムではウエハの背後に冷却板を背負わせ
るようにした冷却治具にウエハを取付け蒸着に際
しての温度上昇を抑えるようにすることが提案さ
れたが治具のウエハの蒸着を終えたのちに次のウ
エハとの交換作業を要して能率が悪く、連続的に
真空室内に送り込まれるウエハを順次自動的に冷
却して処理能率を向上させることが望まれる。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a wafer cooling device for cooling silicon wafers and the like used in semiconductor manufacturing. Conventionally, a resist film, an Al film, etc. are formed on the surface of this type of wafer, and then a thin film is further formed on the surface, but the underlying resist film, etc. melts due to the rise in wafer temperature that accompanies film formation. Otherwise, a deposited Al film or the like tends to have a problem of becoming cloudy and rough. Therefore, in the batch system, it was proposed that the wafer be mounted on a cooling jig with a cooling plate placed behind the wafer to suppress the temperature rise during vapor deposition. However, it is desirable to improve processing efficiency by automatically cooling wafers that are continuously fed into a vacuum chamber one after another.
本考案はこうしたウエハの冷却に伴なう処理能
率の低下を排除することをその目的としたもの
で、真空室１内のウエハ２の背後に、該ウエハ２
の背面３に当接する当接位置と離反した退去位置
とに移動自在の冷却板４を設け、該冷却板４の退
去位置に該冷却板４と当接してこれを冷却する冷
却液等で強制冷却された冷却ベース５を設け、さ
らに該冷却板４に該ロツド１５を該冷却板４に固
定したキヤツプ１８により該ロツド１５の移動方
向に遊びを存して取付けて当接位置において該冷
却板４が該ウエハ２の背面３に自重で当接するよ
うにしたことを特徴とする。 The purpose of the present invention is to eliminate such a decrease in processing efficiency due to cooling of the wafer.
A movable cooling plate 4 is provided at a contact position where it contacts the back surface 3 of the cooling plate 4 and a retracted position where it is separated from the cooling plate 4, and a coolant or the like is forced to contact the cooling plate 4 at the retracted position to cool it. A cooled cooling base 5 is provided, and the rod 15 is attached to the cooling plate 4 by a cap 18 fixed to the cooling plate 4 with play in the direction of movement of the rod 15, so that the cooling plate is held at the abutting position. 4 comes into contact with the back surface 3 of the wafer 2 by its own weight.
図面はその１例を示すもので、これに於てはウ
エハ２は第１図及び第２図示の如く真空室１にそ
の前方に連設した真空の前処理室６からゲートバ
ルブ７を介してコンベヤ８により送り込まれるも
のとし、該真空室１に設けた回転テーブル９上に
反転装置１０でレジスト膜を形成した処理面２ａ
を下方に向けて載置される。該回転テーブル９に
は第３図に見られるように透孔１１を形成し、該
テーブル９の旋回で蒸発源１２と透孔１１とが対
向するとその蒸発物質がウエハ２の処理面２ａに
薄膜状に付着する。冷却板４はCuその他の伝熱
性の良い材料で形成することが好ましく、蒸発源
１２と対向する真空室１の上方にベローズ１３を
介して導入したシリンダ１４のロツド１５により
該ウエハ２の背面３に当接する下降した当接位置
と該背面３から離反した上方の退去位置とに上下
に移動される。該ロツド１５は冷却ベース５に形
成した透孔１６に挿通され、該ロツド１５が冷却
板４を退去位置に移動させたとき該冷却板４と冷
却ベース５とが当接し、パイプ１７を循環する冷
却水、液体窒素等で強制的に冷却した冷却ベース
５で冷却板４が冷却されるようにした。１８は冷
却板４にロツド１５をその移動方向に遊びを存し
て取付けするキヤツプで、該ロツド１５の下降時
ウエハ２の背面３に冷却板４はその自重で当接
し、ウエハ２と冷却板４との圧接による損傷を防
止した。蒸着処理されたテーブル９上のウエハ２
は図示してない反転装置で反転されると共にゲー
トバルブを介して前処理室６の送り出しコンベヤ
１９上に処理面２ａを上向きとして送り出され
る。 The drawings show one example of this, in which the wafer 2 is passed through a gate valve 7 from a vacuum pretreatment chamber 6 connected to the front of the vacuum chamber 1 as shown in FIGS. 1 and 2. The treated surface 2a is conveyed by a conveyor 8, and a resist film is formed on a rotary table 9 provided in the vacuum chamber 1 by a reversing device 10.
is placed facing downward. As shown in FIG. 3, a through hole 11 is formed in the rotary table 9, and when the evaporation source 12 and the through hole 11 face each other as the table 9 rotates, the evaporated material forms a thin film on the processing surface 2a of the wafer 2. It adheres to the shape. The cooling plate 4 is preferably made of Cu or other material with good heat conductivity, and the rod 15 of the cylinder 14 introduced through the bellows 13 above the vacuum chamber 1 facing the evaporation source 12 cools the back surface 3 of the wafer 2. It is moved up and down between a lowered abutment position where it comes into contact with the back surface 3 and an upper retreated position where it is separated from the back surface 3. The rod 15 is inserted into a through hole 16 formed in the cooling base 5, and when the rod 15 moves the cooling plate 4 to the retracted position, the cooling plate 4 and the cooling base 5 come into contact and circulate through the pipe 17. A cooling plate 4 is cooled by a cooling base 5 that is forcibly cooled with cooling water, liquid nitrogen, or the like. Reference numeral 18 denotes a cap for attaching the rod 15 to the cooling plate 4 with some play in the direction of movement; when the rod 15 is lowered, the cooling plate 4 contacts the back surface 3 of the wafer 2 with its own weight, and the wafer 2 and the cooling plate Damage caused by pressure contact with 4 was prevented. Wafer 2 on table 9 that has been vapor-deposited
is reversed by a reversing device (not shown) and sent out onto the delivery conveyor 19 of the pre-processing chamber 6 via a gate valve with the processing surface 2a facing upward.
その作動を説明するに、真空室１のテーブル９
上に処理面２ａを下向きとして載置されたウエハ
２が蒸発源１２の上方に移動すると蒸発物質が該
処理面２ａに付着するが、付着に際してウエハ２
の背面３に冷却ベース５との当接により予め冷却
された冷却板４が下降して当接するのでウエハ２
の蒸着に伴なう熱量は冷却板４で吸熱されその昇
温が防止され、処理面２ａに施したレジスト膜の
溶解や蒸着Al膜の白濁粗面化等を生ずることが
ない。該冷却板４は１のウエハ２の蒸着を終え次
のウエハが移動して来るまでの間冷却ベース５と
当接する退去位置に存し、ウエハ２から吸収した
熱量を冷却ベース５に放出する。 To explain its operation, table 9 of vacuum chamber 1
When the wafer 2 placed on top with the processing surface 2a facing downward moves above the evaporation source 12, evaporated substances adhere to the processing surface 2a.
The cooling plate 4, which has been cooled in advance by coming into contact with the cooling base 5, descends and comes into contact with the back surface 3 of the wafer 2.
The amount of heat accompanying the vapor deposition is absorbed by the cooling plate 4 to prevent the temperature from rising, thereby preventing melting of the resist film applied to the treated surface 2a and clouding and roughening of the vapor-deposited Al film. The cooling plate 4 remains in a withdrawn position in contact with the cooling base 5 until the next wafer is moved after the vapor deposition of one wafer 2 is completed, and releases the amount of heat absorbed from the wafer 2 to the cooling base 5.
このように本考案によるときは真空室１にウエ
ハ２の背面３と強制冷却された冷却ベース５とに
移動して当接する冷却板４を設けたので真空室１
に送り込まれるウエハ２を順次にその昇温時に冷
却出来、冷却のために治具の交換を伴なわないの
でウエハの処理能率を向上出来る等の効果があ
る。さらに、冷却板をウエハの背面に自重で当接
させるようにしたので、圧接による損傷を防止で
きると共に冷却板の冷気がロツドを介して失われ
ることを可及的に少なくすることができる効果が
ある。 In this way, according to the present invention, the vacuum chamber 1 is provided with the cooling plate 4 that moves and comes into contact with the back surface 3 of the wafer 2 and the forcedly cooled cooling base 5.
The wafers 2 sent to the wafer 2 can be cooled one after another as the temperature rises, and since there is no need to replace jigs for cooling, the wafer processing efficiency can be improved. Furthermore, since the cooling plate is brought into contact with the back surface of the wafer under its own weight, it is possible to prevent damage due to pressure bonding and to minimize the loss of cold air from the cooling plate through the rods. be.
第１図は本考案の実施例の概略斜視図、第２図
はその具体化した截断側面図、第３図は第２図の
−線拡大断面図、第４図は第３図の−線
截断平面図である。
１……真空室、２……ウエハ、３……背面、４
……冷却板、５……冷却ベース、１４……シリン
ダ、１５……ロツド、１８……キヤツプ。
Fig. 1 is a schematic perspective view of an embodiment of the present invention, Fig. 2 is a cutaway side view of its embodiment, Fig. 3 is an enlarged cross-sectional view taken along the - line in Fig. 2, and Fig. 4 is a - line in Fig. 3. FIG. 1...Vacuum chamber, 2...Wafer, 3...Back surface, 4
...Cooling plate, 5...Cooling base, 14...Cylinder, 15...Rod, 18...Cap.
Claims (1)
導入したシリンダ１４のロツド１５により該ウエ
ハ２の背面３に当接する当接位置と離反した退去
置とに移動自在の冷却板４を設け、該冷却板４の
退去位置に該冷却板４と当接してこれを冷却する
冷却液等で強制冷却された冷却ベース５を設け、
さらに該冷却板４に該ロツド１５を該冷却板４に
固定したキヤツプ１８により該ロツド１５の移動
方向に遊びを存して取付けて当接位置において該
冷却板４が該ウエハ２の背面３に自重で当接する
ようにしたことを特徴とするウエハ冷却装置。 Behind the wafer 2 in the vacuum chamber 1, a cooling plate 4 is movable by a rod 15 of a cylinder 14 introduced into the vacuum chamber 1 between an abutting position in which it abuts against the back surface 3 of the wafer 2 and a retreating position in which it is separated from the wafer 2. A cooling base 5 which is forcibly cooled with a cooling liquid or the like that contacts the cooling plate 4 and cools it is provided at the retreat position of the cooling plate 4,
Further, the rod 15 is attached to the cooling plate 4 by a cap 18 fixed to the cooling plate 4 with some play in the moving direction of the rod 15, so that the cooling plate 4 touches the back surface 3 of the wafer 2 at the abutting position. A wafer cooling device characterized by being brought into contact with each other using its own weight.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3347283U JPS59141569U (en) | 1983-03-10 | 1983-03-10 | wafer cooling equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3347283U JPS59141569U (en) | 1983-03-10 | 1983-03-10 | wafer cooling equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59141569U JPS59141569U (en) | 1984-09-21 |
| JPS629321Y2 true JPS629321Y2 (en) | 1987-03-04 |
Family
ID=30164263
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3347283U Granted JPS59141569U (en) | 1983-03-10 | 1983-03-10 | wafer cooling equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59141569U (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI582256B (en) * | 2013-02-04 | 2017-05-11 | 愛發科股份有限公司 | Thin substrate processing apparatus |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56166374A (en) * | 1980-05-23 | 1981-12-21 | Nec Corp | Sputtering device |
-
1983
- 1983-03-10 JP JP3347283U patent/JPS59141569U/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56166374A (en) * | 1980-05-23 | 1981-12-21 | Nec Corp | Sputtering device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59141569U (en) | 1984-09-21 |
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