JPS628958B2 - - Google Patents
Info
- Publication number
- JPS628958B2 JPS628958B2 JP56203821A JP20382181A JPS628958B2 JP S628958 B2 JPS628958 B2 JP S628958B2 JP 56203821 A JP56203821 A JP 56203821A JP 20382181 A JP20382181 A JP 20382181A JP S628958 B2 JPS628958 B2 JP S628958B2
- Authority
- JP
- Japan
- Prior art keywords
- alloy
- thick film
- composition according
- film composition
- glass
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000203 mixture Substances 0.000 claims description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 11
- 239000011521 glass Substances 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 11
- 229910045601 alloy Inorganic materials 0.000 claims description 8
- 239000000956 alloy Substances 0.000 claims description 8
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 4
- 229910000990 Ni alloy Inorganic materials 0.000 claims description 3
- 229910001245 Sb alloy Inorganic materials 0.000 claims description 3
- 229910000765 intermetallic Inorganic materials 0.000 claims description 2
- 239000000758 substrate Substances 0.000 description 7
- 238000001465 metallisation Methods 0.000 description 6
- 238000000576 coating method Methods 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- DOIRQSBPFJWKBE-UHFFFAOYSA-N dibutyl phthalate Chemical compound CCCCOC(=O)C1=CC=CC=C1C(=O)OCCCC DOIRQSBPFJWKBE-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 239000000700 radioactive tracer Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 1
- 239000001856 Ethyl cellulose Substances 0.000 description 1
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 1
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 238000013019 agitation Methods 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000001680 brushing effect Effects 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 235000019325 ethyl cellulose Nutrition 0.000 description 1
- 229920001249 ethyl cellulose Polymers 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 229940116411 terpineol Drugs 0.000 description 1
- 230000036962 time dependent Effects 0.000 description 1
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Electromagnetism (AREA)
- Conductive Materials (AREA)
- Photovoltaic Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/218,493 US4342795A (en) | 1980-12-19 | 1980-12-19 | Solar cell metallizations comprising a nickel-antimony alloy |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57128986A JPS57128986A (en) | 1982-08-10 |
| JPS628958B2 true JPS628958B2 (da) | 1987-02-25 |
Family
ID=22815349
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56203821A Granted JPS57128986A (en) | 1980-12-19 | 1981-12-18 | Thick film composition |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US4342795A (da) |
| EP (1) | EP0054706B1 (da) |
| JP (1) | JPS57128986A (da) |
| CA (1) | CA1165995A (da) |
| DE (1) | DE3170420D1 (da) |
| DK (1) | DK563381A (da) |
| GR (1) | GR77120B (da) |
| IE (1) | IE52715B1 (da) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2533754A1 (fr) * | 1982-09-23 | 1984-03-30 | Comp Generale Electricite | Procede de fabrication de cellules solaires |
| JPS6249676A (ja) * | 1985-08-29 | 1987-03-04 | Sharp Corp | 太陽電池 |
| US9818890B2 (en) | 2012-04-18 | 2017-11-14 | Ferro Corporation | Solar cell contacts with nickel intermetallic compositions |
| CN104575667B (zh) * | 2014-12-24 | 2017-09-26 | 乐凯胶片股份有限公司 | 晶体硅太阳能电池正面用导电银浆 |
| US10784383B2 (en) | 2015-08-07 | 2020-09-22 | E I Du Pont De Nemours And Company | Conductive paste composition and semiconductor devices made therewith |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2884344A (en) * | 1957-10-07 | 1959-04-28 | Reynolds Metals Co | Nickel plating |
| US4172919A (en) * | 1977-04-22 | 1979-10-30 | E. I. Du Pont De Nemours And Company | Copper conductor compositions containing copper oxide and Bi2 O3 |
| US4153907A (en) * | 1977-05-17 | 1979-05-08 | Vactec, Incorporated | Photovoltaic cell with junction-free essentially-linear connections to its contacts |
| US4199417A (en) * | 1978-11-13 | 1980-04-22 | Mariano Borruso | Electrodeposition of black deposit and electrolytes therefor |
| US4235644A (en) * | 1979-08-31 | 1980-11-25 | E. I. Du Pont De Nemours And Company | Thick film silver metallizations for silicon solar cells |
-
1980
- 1980-12-19 US US06/218,493 patent/US4342795A/en not_active Expired - Fee Related
-
1981
- 1981-10-28 EP EP81109089A patent/EP0054706B1/en not_active Expired
- 1981-10-28 DE DE8181109089T patent/DE3170420D1/de not_active Expired
- 1981-11-20 IE IE2728/81A patent/IE52715B1/en unknown
- 1981-12-17 CA CA000392513A patent/CA1165995A/en not_active Expired
- 1981-12-17 GR GR66827A patent/GR77120B/el unknown
- 1981-12-18 JP JP56203821A patent/JPS57128986A/ja active Granted
- 1981-12-18 DK DK563381A patent/DK563381A/da not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57128986A (en) | 1982-08-10 |
| DE3170420D1 (en) | 1985-06-13 |
| IE52715B1 (en) | 1988-02-03 |
| EP0054706B1 (en) | 1985-05-08 |
| IE812728L (en) | 1982-06-19 |
| US4342795A (en) | 1982-08-03 |
| DK563381A (da) | 1982-06-20 |
| CA1165995A (en) | 1984-04-24 |
| GR77120B (da) | 1984-09-07 |
| EP0054706A1 (en) | 1982-06-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4347262A (en) | Aluminum-magnesium alloys in low resistance contacts to silicon | |
| ES2348599T3 (es) | Contactos para células solares libres de plomo. | |
| EP2250650B1 (en) | Aluminum pastes and use thereof in the production of silicon solar cells | |
| US8889041B2 (en) | Method of making solar cell contacts | |
| US7718093B2 (en) | Electroconductive thick film composition, electrode, and solar cell formed therefrom | |
| CN101055776B (zh) | 导电的厚膜组合物、电极和所形成的半导体设备 | |
| US7435361B2 (en) | Conductive compositions and processes for use in the manufacture of semiconductor devices | |
| WO2013024829A1 (ja) | はんだ接着体、はんだ接着体の製造方法、素子、太陽電池、素子の製造方法および太陽電池の製造方法 | |
| JP6534786B2 (ja) | 厚膜伝導性組成物およびその使用 | |
| EP0024775A2 (en) | A silver containing thick film conductor composition, a method for producing such a composition, a method of preparing a solar cell comprising screen printing said composition on an n-type layer of a semiconductor wafer and the solar cells thus obtained | |
| US4375007A (en) | Silicon solar cells with aluminum-magnesium alloy low resistance contacts | |
| EP2283524A2 (en) | A process of forming a silicon solar cell | |
| TW201737502A (zh) | 導電性膏及太陽能電池 | |
| US8017428B2 (en) | Process of forming a silicon solar cell | |
| EP0054706B1 (en) | Process of metallizing a silicon solar cell | |
| US4361718A (en) | Silicon solar cell N-region metallizations comprising a nickel-antimony alloy | |
| JPH0337751B2 (da) | ||
| KR20160045716A (ko) | 페이스트 조성물 및 태양 전지 소자 | |
| US20140190560A1 (en) | Back-side electrode of p-type solar cell | |
| US20140290729A1 (en) | Solar cell comprising a p-doped silicon wafer and an aluminum electrode | |
| TW201917903A (zh) | 用於太陽電池電極的組成物及使用其製作的太陽電池電極 | |
| JPS6159551B2 (da) |