JPS628942B2 - - Google Patents
Info
- Publication number
- JPS628942B2 JPS628942B2 JP54113231A JP11323179A JPS628942B2 JP S628942 B2 JPS628942 B2 JP S628942B2 JP 54113231 A JP54113231 A JP 54113231A JP 11323179 A JP11323179 A JP 11323179A JP S628942 B2 JPS628942 B2 JP S628942B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- wiring
- film
- oxide film
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Weting (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11323179A JPS5637646A (en) | 1979-09-04 | 1979-09-04 | Manufacturing of semiconductor device |
| US06/183,813 US4371423A (en) | 1979-09-04 | 1980-09-03 | Method of manufacturing semiconductor device utilizing a lift-off technique |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11323179A JPS5637646A (en) | 1979-09-04 | 1979-09-04 | Manufacturing of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5637646A JPS5637646A (en) | 1981-04-11 |
| JPS628942B2 true JPS628942B2 (enFirst) | 1987-02-25 |
Family
ID=14606879
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11323179A Granted JPS5637646A (en) | 1979-09-04 | 1979-09-04 | Manufacturing of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5637646A (enFirst) |
-
1979
- 1979-09-04 JP JP11323179A patent/JPS5637646A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5637646A (en) | 1981-04-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5070030A (en) | Method of making an oxide isolated, lateral bipolar transistor | |
| JPH0228902B2 (enFirst) | ||
| US4412378A (en) | Method for manufacturing semiconductor device utilizing selective masking, etching and oxidation | |
| JP3098848B2 (ja) | 自己整合型プレーナモノリシック集積回路縦型トランジスタプロセス | |
| JPH0630359B2 (ja) | バイポーラトランジスタの製造方法 | |
| JPH0241170B2 (enFirst) | ||
| US4691436A (en) | Method for fabricating a bipolar semiconductor device by undercutting and local oxidation | |
| JPS628942B2 (enFirst) | ||
| JPS6148260B2 (enFirst) | ||
| JPH0254662B2 (enFirst) | ||
| JPH0155585B2 (enFirst) | ||
| JPS6220711B2 (enFirst) | ||
| JPS647509B2 (enFirst) | ||
| JPH0136710B2 (enFirst) | ||
| JPS641064B2 (enFirst) | ||
| JPS5911644A (ja) | 半導体装置の製造方法 | |
| JPH0437581B2 (enFirst) | ||
| JPS628028B2 (enFirst) | ||
| JPH0318738B2 (enFirst) | ||
| JPH0136709B2 (enFirst) | ||
| JP2822382B2 (ja) | 半導体装置及びその製造方法 | |
| JPS629226B2 (enFirst) | ||
| JPS6145392B2 (enFirst) | ||
| JPH0130310B2 (enFirst) | ||
| JPH0828368B2 (ja) | 半導体装置の製造方法 |