JPS628585Y2 - - Google Patents

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Publication number
JPS628585Y2
JPS628585Y2 JP1979025798U JP2579879U JPS628585Y2 JP S628585 Y2 JPS628585 Y2 JP S628585Y2 JP 1979025798 U JP1979025798 U JP 1979025798U JP 2579879 U JP2579879 U JP 2579879U JP S628585 Y2 JPS628585 Y2 JP S628585Y2
Authority
JP
Japan
Prior art keywords
conductive
terminals
base
wave device
acoustic wave
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP1979025798U
Other languages
Japanese (ja)
Other versions
JPS55127417U (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1979025798U priority Critical patent/JPS628585Y2/ja
Publication of JPS55127417U publication Critical patent/JPS55127417U/ja
Application granted granted Critical
Publication of JPS628585Y2 publication Critical patent/JPS628585Y2/ja
Expired legal-status Critical Current

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  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Description

【考案の詳細な説明】 本考案は導電性ベースに取り付けられる弾性表
面波装置の取付構造に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a mounting structure for a surface acoustic wave device mounted on a conductive base.

従来、弾性表面波装置の導電ベースへの取付け
は、第1図に示すように、シールド効果を併せて
もたせるため、表面波基板1を導電性ベース2に
対し導電ベイント3で固着して行なわれている。
表面波基板1にはその表面側に入力および出力用
インターデイジタルトランスジユーサ(以下、
IDTと略す)4,5が設けられ、両IDT4,5間
に入出力間の静電しやへいの目的でアース電極6
が配設されている。各IDT4,5は相互に差し込
まれた一対のくし歯電極で構成され、各IDTごと
に一方のくし歯電極がホツト端子7,9に接続さ
れ、他方のくし歯電極がアース端子8,10に接
続され、また、アース電極6がベース2に電気的
に接続されたアース端子11に接続されている。
そして、各IDTの端子7,8間および端子9,1
0間には、微小間隔で対向する一対のくし歯電極
間に形成される容量があらわれ、その容量は比較
的大きく、特に表面波基板がセラミツクなどの高
誘電率圧電体の場合には一層大きくなり、この結
果端子間のインピーダンスが小さくなり、前後段
の回路とのインピーダンスマツチングがとりにく
くなることがある。しかも、実際の回路では、ボ
デイアースされた端子11と入出力のアース端子
8,10とが外部で接続されるので、端子7,8
間および端子9,10間には上記容量以外に別の
容量が並列的に加わる。その別の容量は、ホツト
端子7,9に接続されているホツト側くし歯電極
と導電ベイント3間に形成されるものである。し
たがつて、端子7,8間および端子9,10間の
容量はさらに一層大きくなる。因に、その容量は
IDT自体の容量の1.2〜1.5倍程度になる。
Conventionally, a surface acoustic wave device is mounted on a conductive base by fixing a surface wave substrate 1 to a conductive base 2 with a conductive vent 3 in order to provide a shielding effect as well, as shown in FIG. ing.
The surface wave board 1 has input and output interdigital transducers (hereinafter referred to as
A ground electrode 6 is provided between both IDTs 4 and 5 for the purpose of preventing static electricity between input and output.
is installed. Each IDT 4, 5 consists of a pair of comb-tooth electrodes inserted into each other, one comb-tooth electrode for each IDT is connected to hot terminals 7, 9, and the other comb-tooth electrode is connected to ground terminals 8, 10. The ground electrode 6 is also connected to a ground terminal 11 electrically connected to the base 2 .
Then, between terminals 7 and 8 of each IDT and between terminals 9 and 1
Between 0 and 0, there appears a capacitance formed between a pair of comb-shaped electrodes facing each other with a minute interval, and this capacitance is relatively large, and is even larger when the surface wave substrate is made of a high dielectric constant piezoelectric material such as ceramic. As a result, the impedance between the terminals becomes small, and it may become difficult to achieve impedance matching with the circuits in the preceding and succeeding stages. Moreover, in the actual circuit, the body grounded terminal 11 and the input/output ground terminals 8 and 10 are connected externally, so the terminals 7 and 8 are connected externally.
In addition to the above capacitance, another capacitance is added in parallel between the terminals 9 and 10. The other capacitance is formed between the hot-side comb-shaped electrode connected to the hot terminals 7 and 9 and the conductive vein 3. Therefore, the capacitance between terminals 7 and 8 and between terminals 9 and 10 becomes even larger. Incidentally, its capacity is
It will be about 1.2 to 1.5 times the capacity of IDT itself.

本考案は、上述した従来の欠点を改良したもの
で、入出力インピーダンスを低下させずハーメチ
ツクケースなどの導電ベースに弾性表面波装置を
取り付けることができるようにした表面波装置の
取付構造を提供することを目的とする。
The present invention improves the above-mentioned conventional drawbacks, and provides a mounting structure for a surface acoustic wave device that allows the surface acoustic wave device to be mounted on a conductive base such as a hermetic case without reducing input/output impedance. The purpose is to provide.

以下、本考案の実施例を図面を参照しつつ詳述
する。
Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

第2図において、20はハーメチツクケースの
一部をなす導電性ベースで、このベース20には
5本の端子21,22,23,24,25が貫通
固定され、このうちの端子25はベース20に電
気的に導通され、残りの端子21,22,23,
24はベース20に電気的に絶縁されている。2
6は表面波装置で、セラミツクのような比較的誘
電率の高い圧電材料で構成された表面波基板27
と、この基板27の表面側に形成された入力およ
び出力用IDT28,29と、両IDT28,29間
に配設されたアース電極30とで構成されてい
る。表面波基板27の裏面側にはIDT28,29
と対向する位置に、それぞれエポキシ樹脂系接着
剤等の表面波基板27に比較して低誘電率の非導
電性膜31,32が印刷等の手段で塗布されてい
る。そして、基板27の裏面に非導電性膜31,
32の上から導電ペイント33を塗布し、もしく
はベース20上に予め導電ベイント33を塗布し
ておき、この導伝ペイント33により表面波装置
26が導電ベース20に固着されている。本実施
例によれば、各IDT28,29とベース20間に
低誘電率の非導電性膜31,32が介在され、か
つ各IDT28,29と導電ペイント33間の距離
が長くなるので、各IDT28,29のホツト側く
し歯電極とベース20もしくは導電ペイント33
との間に生ずる容量がきわめて小さくなり、実際
の回路に組み込んだ状態で端子21,22間およ
び端子23,24間のインピーダンスが従来例と
比較して大幅に高くなる。
In FIG. 2, 20 is a conductive base that forms a part of the hermetic case, and five terminals 21, 22, 23, 24, and 25 are fixed through the base 20, of which terminal 25 is fixed. The remaining terminals 21, 22, 23,
24 is electrically insulated from the base 20. 2
Reference numeral 6 denotes a surface wave device, which includes a surface wave substrate 27 made of a piezoelectric material with a relatively high dielectric constant, such as ceramic.
, input and output IDTs 28 and 29 formed on the surface side of this substrate 27, and a ground electrode 30 disposed between both IDTs 28 and 29. IDTs 28 and 29 are installed on the back side of the surface wave board 27.
Non-conductive films 31 and 32, each made of an epoxy resin adhesive or the like and having a lower dielectric constant than the surface wave substrate 27, are applied at positions facing the surface wave substrate 27 by means of printing or the like. Then, on the back surface of the substrate 27, a non-conductive film 31,
A conductive paint 33 is applied over the conductive paint 32 or the conductive paint 33 is applied on the base 20 in advance, and the surface acoustic wave device 26 is fixed to the conductive base 20 by the conductive paint 33. According to this embodiment, the low dielectric constant non-conductive films 31 and 32 are interposed between each IDT 28 and 29 and the base 20, and the distance between each IDT 28 and 29 and the conductive paint 33 is long, so each IDT 28 , 29 hot side comb tooth electrode and base 20 or conductive paint 33
The capacitance generated between the terminals 21 and 22 and the terminals 23 and 24 when incorporated into an actual circuit becomes significantly higher than in the conventional example.

第3図は他の実施例を示し、上記実施例と同一
の部分には同一符号を付してその説明を省略す
る。本実施例は、表面波基板27の裏面であつて
各IDT28,29に対向する部分に非導電性の接
着剤40,41を塗布し、両IDT28,29間に
対向する部分すなわち両接着剤40,41間には
導電ペイント42を塗布し、これらの接着剤およ
びペイント40,41,42でもつて表面波装置
26をベース20に固着するようにしたものであ
る。これらの接着剤およびペイント40,41,
42はベース20側に塗布しておいてもよい。
FIG. 3 shows another embodiment, in which the same parts as in the above embodiment are denoted by the same reference numerals and the explanation thereof will be omitted. In this embodiment, non-conductive adhesives 40 and 41 are applied to the back surface of the surface wave substrate 27 and the parts facing each IDT 28 and 29, and the parts facing between both IDTs 28 and 29, that is, both adhesives 40 , 41 is coated with conductive paint 42, and these adhesives and paints 40, 41, 42 also fix the surface acoustic wave device 26 to the base 20. These adhesives and paints40,41,
42 may be applied on the base 20 side.

上記各実施例においてベースはハーメチツクケ
ースの一部を用いているが、プリント基板等であ
つてもよい。また、アース端子22,24は装置
内において予めボデイアースしておいてもよい。
In each of the above embodiments, a part of the hermetic case is used as the base, but it may also be a printed circuit board or the like. Further, the ground terminals 22 and 24 may be grounded to the body in advance within the device.

本考案は、以上説明したように、表面波基板の
トランスジユーサの設けられていない面で、トラ
ンスジユーサと対向する位置に低誘電率の非導電
性膜を介在させて表面波装置を導電性ベースに取
り付けるようにしているので、入力および出力端
子間にあらわれる容量が小さくなり、表面波装置
の入出力インピーダンスを高めることができる。
As explained above, the present invention provides a conductive surface wave device by interposing a low dielectric constant non-conductive film at a position facing the transducer on the surface of the surface wave substrate where the transducer is not provided. Since the surface acoustic wave device is attached to the magnetic base, the capacitance appearing between the input and output terminals is reduced, and the input/output impedance of the surface acoustic wave device can be increased.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来における表面波装置の取付構造を
示す平面図、第2図aおよびbはそれぞれ本考案
に基づく表面波装置の取付構造を示す平面図およ
びB−B線断面図、第3図は他の実施例を示す断
面図である。 20……導電性ベース、26……表面波装置、
27……表面波基板、28,29……IDT、3
1,32,40,41……非導電性膜。
FIG. 1 is a plan view showing a conventional mounting structure for a surface wave device, FIGS. 2a and 2b are a plan view and a sectional view taken along line B-B, respectively, showing a mounting structure for a surface wave device based on the present invention, and FIG. FIG. 3 is a sectional view showing another embodiment. 20... Conductive base, 26... Surface wave device,
27...Surface wave board, 28, 29...IDT, 3
1, 32, 40, 41... Non-conductive film.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 導電性ベースに取り付けられる弾性表面波装置
の取付構造において、表面波基板のトランスジユ
ーサの設けられていない面でトランスジユーサと
対向する位置に低誘電率の非導電性膜を介在させ
て導電性ベースに取り付けられたことを特徴とす
る弾性表面波装置の取付構造。
In the mounting structure of a surface acoustic wave device that is attached to a conductive base, a non-conductive film with a low dielectric constant is interposed at a position facing the transducer on the surface of the surface wave board where the transducer is not provided to conduct electricity. A mounting structure for a surface acoustic wave device, characterized in that it is mounted on a flexible base.
JP1979025798U 1979-02-28 1979-02-28 Expired JPS628585Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1979025798U JPS628585Y2 (en) 1979-02-28 1979-02-28

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1979025798U JPS628585Y2 (en) 1979-02-28 1979-02-28

Publications (2)

Publication Number Publication Date
JPS55127417U JPS55127417U (en) 1980-09-09
JPS628585Y2 true JPS628585Y2 (en) 1987-02-27

Family

ID=28866841

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1979025798U Expired JPS628585Y2 (en) 1979-02-28 1979-02-28

Country Status (1)

Country Link
JP (1) JPS628585Y2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH026666Y2 (en) * 1981-02-18 1990-02-19
JPH026667Y2 (en) * 1981-02-19 1990-02-19
JPH026668Y2 (en) * 1981-02-19 1990-02-19
JPS59183026U (en) * 1983-05-24 1984-12-06 株式会社東芝 surface acoustic wave device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5413793B2 (en) * 1971-09-13 1979-06-02

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5413793U (en) * 1977-06-30 1979-01-29

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5413793B2 (en) * 1971-09-13 1979-06-02

Also Published As

Publication number Publication date
JPS55127417U (en) 1980-09-09

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