JPS6283465A - Thin film forming device - Google Patents

Thin film forming device

Info

Publication number
JPS6283465A
JPS6283465A JP22294985A JP22294985A JPS6283465A JP S6283465 A JPS6283465 A JP S6283465A JP 22294985 A JP22294985 A JP 22294985A JP 22294985 A JP22294985 A JP 22294985A JP S6283465 A JPS6283465 A JP S6283465A
Authority
JP
Japan
Prior art keywords
vacuum
etching
thin film
particles
processing chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP22294985A
Other languages
Japanese (ja)
Inventor
Hiroshi Aoyama
弘 青山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP22294985A priority Critical patent/JPS6283465A/en
Publication of JPS6283465A publication Critical patent/JPS6283465A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE:To make treatment of particles while a vacuum is maintained by detecting the particle generation condition in a vacuum treatment chamber and subjecting a filming part to etching off in accordance with the information obtd. in such a manner. CONSTITUTION:The particle generation condition in the vacuum treatment chamber 5 for forming thin films is detected by a detection part 8. An alarm or the like is emitted from a control part 9 when the detected value attains a certain reference. The filming part in the vacuum treatment chamber 5 is subjected to etching off by the information of the control part 9 or the judgement of the timing for maintenance in the integrated time of the treatment in a sputtering process. The adverse influence of the particles on the sputtering process is decreased without breaking the vacuum by the above-mentioned method and the etching-off of the filming part is executed.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は真空中でウェハに薄膜を形成するスパッタ装置
に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a sputtering apparatus for forming a thin film on a wafer in vacuum.

Ｃ従来の技術〕 従来、この種の薄膜形成装置のパーティクルの対策につ
いては、装置側での管理は行っておらず、真空処理室で
処理したウェハに付着したパーティクルの数を確認し、
多ければ真空処理室をあけて内部治具の交換、或いは清
浄を行っていた。C. Conventional technology] Conventionally, particle countermeasures for this type of thin film forming equipment have not been managed on the equipment side, but by checking the number of particles attached to wafers processed in the vacuum processing chamber.
If necessary, the vacuum processing chamber would be opened to replace or clean internal jigs.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

上述した従来の対策では、真空処理室内のパーティクル
の状況をつかめていないこと、又真空状態を大気状態に
切り換えてチェック、対策を行わなけわ、ばならないと
いう欠点がある。通常、薄膜形成装置において真空状態
を破ることはできる限りさけたいもので、これを行うこ
とは装置の稼動率を下げることにつながるものである。The above-mentioned conventional countermeasures have the disadvantage that the state of particles in the vacuum processing chamber cannot be grasped, and that checks and countermeasures must be taken after switching from a vacuum state to an atmospheric state. Normally, it is desired to avoid breaking the vacuum state in a thin film forming apparatus as much as possible, and doing so leads to a reduction in the operating rate of the apparatus.

本発明は前記問題点を解消し、真空状態を保ったｉｔパ
ーティクルの処理を行う薄膜形成装置を提供するもので
ある。The present invention solves the above problems and provides a thin film forming apparatus that processes IT particles while maintaining a vacuum state.

〔問題点を解決するための手段〕[Means for solving problems]

本発明は薄膜形成用真空処理室内のパーティクル発生状
況を検出する検出部と、検出部からの情報に基づいてプ
ロセス実施の可否を判断する制御部と、制御部からの指
令により真空状態で真空処理室内のパーティクル発生原
因になる被膜をエツチング除去する処理部とを有するこ
とを特徴とする薄膜形成装置である。The present invention includes a detection unit that detects the state of particle generation in a vacuum processing chamber for thin film formation, a control unit that determines whether or not the process can be performed based on information from the detection unit, and vacuum processing in a vacuum condition based on instructions from the control unit. This thin film forming apparatus is characterized by having a processing section that etches and removes a film that causes particles to be generated in a room.

〔実施例〕〔Example〕

以下、本発明の一実施例について図面を参照して説明す
る。An embodiment of the present invention will be described below with reference to the drawings.

第１図は本発明の一実施例である。図において１はウェ
ハ、２はウェハ１に対向して設けられたカソードであり
、３はスパッタ用ＤＣ電源、４は防着シールド、５は薄
膜形成プロセスを行う真空処理室、６は真空処理室内を
排気するポンプ、７はスパッタ用プロセスガスの導入系
である。これらの構成は従来と同じである。FIG. 1 shows an embodiment of the present invention. In the figure, 1 is a wafer, 2 is a cathode provided opposite to the wafer 1, 3 is a DC power source for sputtering, 4 is an anti-adhesion shield, 5 is a vacuum processing chamber where the thin film forming process is performed, and 6 is a vacuum processing chamber. 7 is an introduction system for sputtering process gas. These configurations are the same as before.

本発明は真空処理室５のパーティクル発生状況を検出す
る検出部８と、検出部８からの情報に基づいてプロセス
実施の可否を判断する制御部９と、制御部９よりの指令
に基づいて真空処理室５内の被膜部のエツチング除去を
行わせるエツチング電極１０及びＲＦ電源１１、エツチ
ング用プロセスガス導入系１２、エツチングプロセス用
排気ポンプ１３、エツチング用排気トラップ１４を有す
る。The present invention includes a detection unit 8 that detects the state of particle generation in the vacuum processing chamber 5, a control unit 9 that determines whether or not a process can be performed based on information from the detection unit 8, and It has an etching electrode 10 for etching and removing a coating within the processing chamber 5, an RF power source 11, an etching process gas introduction system 12, an etching process exhaust pump 13, and an etching exhaust trap 14.

実施例において、薄膜形成を行う真空処理室５内のパー
ティクル発生状況を検出部８により検出し、ある基準に
達したときに、アラーム等を制御部９により出力させる
。検出部８としては、レーザ光によるパーティクルカウ
ンター等によれば真空を破ることなく、パーティクルの
管理を可能にするものである。又、次にパーティクルの
発生に対し本発明の実施例では制御部９の情報あるいは
スパッタプロセスの処理の積算時間におけるメンテナン
ス時期、即ち内部シールド関係に膜付着が進んでしまう
時期の判断により真空処理室内の被膜部に対しエツチン
グ除去を真空状態を保ったま１これを行わせるものであ
る。これは本発明では例えばＣＦ、十〇。等のガスをエ
ツチング用ガス導入系より導入し、エツチング用排気ポ
ンプ１３で排気しなから一定圧のガス雰囲気を作り、そ
こへエツチング電極１０に高周波を電源１１より印加し
、プラズマを作り被膜部のエツチング除去を行わせる。In the embodiment, a detection unit 8 detects the state of particle generation in a vacuum processing chamber 5 in which thin film formation is performed, and when a certain standard is reached, an alarm or the like is outputted by a control unit 9. As the detection unit 8, a particle counter using a laser beam or the like can be used to manage particles without breaking the vacuum. Next, regarding the generation of particles, in the embodiment of the present invention, the maintenance time in the vacuum processing chamber is determined based on the information from the control unit 9 or the maintenance period in the cumulative processing time of the sputtering process, that is, when film adhesion progresses to the internal shield. This is done by etching the coating portion while maintaining a vacuum state. In the present invention, this is, for example, CF, 10. A gas such as the following is introduced from the etching gas introduction system and evacuated by the etching exhaust pump 13 to create a gas atmosphere at a constant pressure. Then, high frequency is applied to the etching electrode 10 from the power source 11 to create plasma and remove the film. Perform etching removal.

この時、排気機能には排気ポンプの他にそのラインには
エツチングによる反応生成物等をトラップする。そして
、このエツチング終了後には排気がスパッタ用排気系６
に変わり、スパッタプロセス可能状態にもどすものであ
る。At this time, in addition to the exhaust pump, the exhaust line traps reaction products caused by etching. After this etching is completed, the exhaust gas is transferred to the sputtering exhaust system 6.
, and returns the state to a state in which sputtering process is possible.

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明は真空処理室内のパーティク
ルの発生状況を検出し、その信号に基づいて、パーティ
クルの発生につながるスパッタによる真空処理室内の被
膜部に対しエツチング除去を行わせるようにしたことに
より、真空処理室のパーティクル発生状況の管理を行う
ことができ、かつ真空を破らずこのパーティクルに対す
るスパッタプロセスへの悪影響を軽減させるべく被膜部
へのエツチング除去を行うことができる効果を有するも
のである。As explained above, the present invention detects the state of particle generation in the vacuum processing chamber and, based on the signal, etches away the coating in the vacuum processing chamber due to sputtering that leads to the generation of particles. With this, it is possible to control the state of particle generation in the vacuum processing chamber, and it has the effect of etching away the coating part in order to reduce the adverse effect of the particles on the sputtering process without breaking the vacuum. be.

【図面の簡単な説明】[Brief explanation of drawings]

第１図は本発明の薄膜形成装置の真空処理室内を示す構
成図である。 １・・・ウェハ、２・・・カソード、３・・・スパッタ
用電源、４・・・防着シールド、５・・・真空処理室、
８・・・検出部、９・・・制御部、１０・・・エツチン
グ電極、１１・・・エツチング用ＲＦ電源、１２・・・
エツチング用ガス導入系、１３・・・エツチング用排気
ポンプ、１４・・・エツチング用排気トラップFIG. 1 is a configuration diagram showing the inside of a vacuum processing chamber of a thin film forming apparatus of the present invention. DESCRIPTION OF SYMBOLS 1... Wafer, 2... Cathode, 3... Power supply for sputtering, 4... Anti-adhesion shield, 5... Vacuum processing chamber,
8... Detection section, 9... Control section, 10... Etching electrode, 11... RF power source for etching, 12...
Etching gas introduction system, 13... Etching exhaust pump, 14... Etching exhaust trap

Claims (1)

【特許請求の範囲】[Claims] （１）薄膜形成用真空処理室内のパーティクル発生状況
を検出する検出部と、検出部からの情報に基づいてプロ
セス実施の可否を判断する制御部と、制御部からの指令
により真空状態で真空処理室内のパーティクル発生原因
になる被膜をエッチング除去する処理部とを有すること
を特徴とする薄膜形成装置。(1) A detection unit that detects the state of particle generation in the vacuum processing chamber for thin film formation, a control unit that determines whether or not the process can be performed based on information from the detection unit, and vacuum processing in a vacuum condition based on instructions from the control unit. 1. A thin film forming apparatus comprising a processing section that etches and removes a film that causes particles in a room.
JP22294985A 1985-10-07 1985-10-07 Thin film forming device Pending JPS6283465A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22294985A JPS6283465A (en) 1985-10-07 1985-10-07 Thin film forming device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22294985A JPS6283465A (en) 1985-10-07 1985-10-07 Thin film forming device

Publications (1)

Publication Number Publication Date
JPS6283465A true JPS6283465A (en) 1987-04-16

Family

ID=16790399

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22294985A Pending JPS6283465A (en) 1985-10-07 1985-10-07 Thin film forming device

Country Status (1)

Country Link
JP (1) JPS6283465A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0425419A2 (en) * 1989-10-23 1991-05-02 International Business Machines Corporation Methods and apparatus for contamination control in plasma processing

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0425419A2 (en) * 1989-10-23 1991-05-02 International Business Machines Corporation Methods and apparatus for contamination control in plasma processing

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