JPS628016B2 - - Google Patents
Info
- Publication number
- JPS628016B2 JPS628016B2 JP5633281A JP5633281A JPS628016B2 JP S628016 B2 JPS628016 B2 JP S628016B2 JP 5633281 A JP5633281 A JP 5633281A JP 5633281 A JP5633281 A JP 5633281A JP S628016 B2 JPS628016 B2 JP S628016B2
- Authority
- JP
- Japan
- Prior art keywords
- resist stripping
- tank
- specific gravity
- stripping solution
- liquid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000007788 liquid Substances 0.000 claims description 25
- 230000005484 gravity Effects 0.000 claims description 21
- 239000003960 organic solvent Substances 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 3
- 239000000243 solution Substances 0.000 description 21
- 238000000034 method Methods 0.000 description 8
- CYTYCFOTNPOANT-UHFFFAOYSA-N Perchloroethylene Chemical group ClC(Cl)=C(Cl)Cl CYTYCFOTNPOANT-UHFFFAOYSA-N 0.000 description 6
- 229950011008 tetrachloroethylene Drugs 0.000 description 6
- 238000011282 treatment Methods 0.000 description 6
- 230000006866 deterioration Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 3
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- XSTXAVWGXDQKEL-UHFFFAOYSA-N Trichloroethylene Chemical group ClC=C(Cl)Cl XSTXAVWGXDQKEL-UHFFFAOYSA-N 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000007603 infrared drying Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
Description
【発明の詳細な説明】
本発明は有機レジスト剥離液を用いたレジスト
剥離工程の自動装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an automatic apparatus for a resist stripping process using an organic resist stripping solution.
従来のテトラクロルエチレンやフエノールを主
成分として含むレジスト剥離工程ではレジスト剥
離液を繰返し使用するのが通例であるが、その液
の劣化の程度を定量的に検知することが難しく、
処理回路や外観から経験的に判断し適宜交換して
いた。しかしながら、レジスト剥離液の主成分の
沸点は100〜200℃のものが多く、使用温度も100
℃前後のため処理回数あるいは処理温度やそのゆ
らぎによつて液組成が著しく変化し、レジストの
剥離能力が大きく異なる場合もあつた。第１図は
レジスト剥離液中のテトラクロルエチレン濃度と
処理回数の関係を示したもので、イに示す液温90
℃の場合でも、またロに示す液温120℃の場合で
も、処理回数と共に急速に濃度が減少し、減少の
勾配は処理温度に強く影響することがわかる。こ
のように液の濃度は変化しやすいにもかかわら
ず、その簡易な定量方法が無いため、レジスト剥
離液の劣化を自動的に検出し液を交換することの
可能な自動装置を製作することは困難であつた。 In conventional resist stripping processes that mainly contain tetrachlorethylene and phenol, it is common to use resist stripping solutions repeatedly, but it is difficult to quantitatively detect the degree of deterioration of the solution.
They were determined empirically from the processing circuit and appearance and replaced as appropriate. However, the boiling point of the main component of resist stripping solution is often 100 to 200℃, and the operating temperature is also 100℃.
Since the temperature is around 0.degree. C., the liquid composition changes significantly depending on the number of treatments, the treatment temperature, and its fluctuations, and in some cases, the resist stripping ability varies greatly. Figure 1 shows the relationship between the tetrachlorethylene concentration in the resist stripping solution and the number of treatments.
It can be seen that the concentration rapidly decreases as the number of treatments increases, both in the case of the liquid temperature of 120 degrees Celsius shown in (b), and that the slope of the decrease strongly influences the treatment temperature. Despite the fact that the concentration of the liquid changes easily, there is no simple method for quantifying it, so it is difficult to create an automatic device that can automatically detect the deterioration of the resist stripping liquid and replace the liquid. It was difficult.
本発明は、従来のこのような欠点を解決するた
め、レジスト剥離液の劣化をそのレジスト剥離液
の比重を検出するという簡単な方法によつて判定
することによりレジスト剥離液を自動的に交換す
る手段を備えてレジスト剥離能力を減少させずに
レジスト剥離工程を自動化することができるレジ
スト自動剥離装置を提供することを目的とする。 In order to solve these conventional drawbacks, the present invention automatically replaces the resist stripping solution by determining the deterioration of the resist stripping solution by a simple method of detecting the specific gravity of the resist stripping solution. It is an object of the present invention to provide an automatic resist stripping apparatus that is equipped with means and can automate a resist stripping process without reducing resist stripping ability.
以下本発明を詳細に説明する。 The present invention will be explained in detail below.
第２図はレジスト剥離液中のテトラクロルエチ
レン濃度と比重の関係を示したもので、テトラク
ロルエチレン濃度と共に比重が単調に増加するこ
とがわかる。液組成の変化を簡易に調べる他の方
法として粘度測定等も考えられるが、温度による
比重と粘度の変化を比較すると、第３図のイ，ロ
に示すように比重の方が小さく、測定誤差が少な
い。従つて比重を検出するセンサ（比重計）をレ
ジスト液中に入れ、その比重を測定するようにす
れば、液の劣化状態、即ち液の交換時期を正確に
知り、レジスト剥離装置を実現することができ
る。 FIG. 2 shows the relationship between the tetrachlorethylene concentration and specific gravity in the resist stripping solution, and it can be seen that the specific gravity increases monotonically with the tetrachlorethylene concentration. Measuring viscosity is another possible way to easily examine changes in liquid composition, but when comparing the changes in specific gravity and viscosity due to temperature, the specific gravity is smaller as shown in Figure 3, A and B, and there is a measurement error. Less is. Therefore, by inserting a sensor (hydrometer) that detects specific gravity into the resist solution and measuring the specific gravity, it is possible to accurately know the deterioration state of the solution, that is, when to replace the solution, and realize a resist stripping device. I can do it.
第４図はこの比重計、制御系、薬品供給系、廃
液排出系、及びウエハ等の処理対象物の移送系を
装着した本発明によるレジスト自動剥離装置の１
例である。第４図において、タンク１，２はレジ
スト剥離液であり、タンク３，４にはトリクロル
エチレン又はキシレン等の有機溶媒を入れ、ウエ
ハ等の処理対象物をバスケツト等に入れて移送す
る移送手段としての移送系５によりタンク１から
タンク４まで順次移送される。タンク１，２には
比重計６，７が装着され、室温において液の比重
を測定し、もし比重が所定の値以上であればその
結果の信号を比重計６，７とともに比重測定手段
を構成する比重センサ１５，１６から制御系８に
フイードバツクして制御系８により制御して、タ
ンク１，２のレジスト剥離液を加熱手段としての
ヒーター９，１０により90℃〜120℃程度の処理
温度に加熱する。また、室温において、前記の比
重測定手段により測定された比重が所定の値以下
であれば液が劣化しているので、その劣化が検知
されたタンク１，２のレジスト剥離液を備え付け
のバルブ１７ａ，１７ｂを開放する等の処理によ
り、排出管１８から排出して、貯液タンク１１か
ら新しいレジスト剥離液を規定された量まで注入
し、処理温度に加熱する。この場合の注入は、液
供給用管２０ａ，２０ｂのバルブ１９ａ，１９ｂ
の開放と貯液タンク１１内への窒素ガスの圧入と
により実行し得る。これらの制御は、制御系８の
制御の下に行なわれる。従つて、制御系８、排出
管１８、バルブ１７ａ，１７ｂ、貯液タンク１
１、液供給用管２０ａ，２０ｂ、バルブ１９ａ，
１９ｂは液交換手段を構成している。注入し加熱
されたレジスト剥離液の温度が設定値に達する
と、被レジスト剥離試料は移送系５によつてタン
ク１に移送され、タンク１にてレジスト剥離処理
を行ない、更に処理を確実にするためタンク２へ
移送されて処理される。レジスト剥離された試料
は温度調節されたタンク３，４でレジスト剥離液
を洗浄し、乾燥用赤外線ランプ１２で乾燥されて
レジスト剥離工程を終了する。 FIG. 4 shows one example of an automatic resist stripping apparatus according to the present invention equipped with this hydrometer, a control system, a chemical supply system, a waste liquid discharge system, and a transfer system for objects to be processed such as wafers.
This is an example. In FIG. 4, tanks 1 and 2 contain a resist stripping solution, and tanks 3 and 4 contain an organic solvent such as trichlorethylene or xylene, and are used as a transfer means for transporting objects to be processed, such as wafers, in a basket or the like. It is sequentially transferred from tank 1 to tank 4 by transfer system 5. The tanks 1 and 2 are equipped with hydrometers 6 and 7, which measure the specific gravity of the liquid at room temperature, and if the specific gravity exceeds a predetermined value, the resulting signal is sent together with the hydrometers 6 and 7, which constitute specific gravity measuring means. Feedback is sent from the specific gravity sensors 15 and 16 to the control system 8, and the control system 8 controls the resist stripping liquid in the tanks 1 and 2 to a processing temperature of about 90°C to 120°C using heaters 9 and 10 as heating means. Heat. Further, if the specific gravity measured by the specific gravity measuring means is below a predetermined value at room temperature, the liquid has deteriorated. , 17b, etc., the resist stripping solution is discharged from the discharge pipe 18, and a new resist stripping solution is injected from the solution storage tank 11 up to a specified amount, and heated to a processing temperature. In this case, the injection is performed using the valves 19a and 19b of the liquid supply pipes 20a and 20b.
This can be carried out by opening the liquid storage tank 11 and pressurizing nitrogen gas into the liquid storage tank 11. These controls are performed under the control of a control system 8. Therefore, the control system 8, the discharge pipe 18, the valves 17a, 17b, and the liquid storage tank 1
1. Liquid supply pipes 20a, 20b, valve 19a,
19b constitutes a liquid exchange means. When the temperature of the injected and heated resist stripping solution reaches a set value, the resist stripping sample is transferred to tank 1 by transfer system 5, resist stripping processing is performed in tank 1, and the processing is further ensured. It is then transferred to tank 2 for processing. The sample from which the resist has been stripped is cleaned of the resist stripping solution in temperature-controlled tanks 3 and 4, and dried with an infrared drying lamp 12 to complete the resist stripping process.
以上説明したように、レジスト剥離液の劣化を
確実に検出する簡易且つ高感度の手法を見いだし
たことにより、従来からの経験に頼つていたレジ
スト剥離液の交換時期を明確にし、レジスト剥離
液を自動的に交換することが可能である。従つ
て、本発明によれば、レジスト剥離工程での処理
効果を完全に維持することができ、高価なレジス
ト剥離液を経済的に使用できること、さらに人体
への汚染を最少限に抑えてしかもフエノール等の
有害物質から作業者を保護することが可能なこと
等多数の利点を有している。 As explained above, by discovering a simple and highly sensitive method to reliably detect the deterioration of resist stripping solution, we have clarified when to replace the resist stripping solution, which previously relied on experience, and can be replaced automatically. Therefore, according to the present invention, the processing effect in the resist stripping process can be completely maintained, expensive resist stripping liquid can be used economically, and contamination to the human body can be minimized, and phenol It has many advantages such as being able to protect workers from harmful substances such as.
第１図は処理回数とテトラクロルエチレン濃度
の関係を示す特性図、第２図はテトラクロルエチ
レンの濃度と比重との関係を示す特性図、第３図
は剥離液の温度と粘度、比重との関係を表わす特
性図、第４図は本発明によるレジスト剥離装置の
１例を示す系統図である。
１，２……レジスト剥離液を入れたタンク、
３，４……有機溶媒を入れたタンク、５……ウエ
ハを入れたバスケツトの移送系、６……タンク１
の比重計、７……タンク２の比重計、８……制御
系、９……タンク１の加熱ヒーター、１０……タ
ンク２の加熱ヒーター、１１……未使用のレジス
ト剥離液の貯液タンク、１２……乾燥用赤外線ラ
ンプ、１３……タンク３の加熱ヒーター、１４…
…タンク４の加熱ヒーター、１５……タンク１の
比重センサ、１６……タンク２の比重センサ、１
７ａ，１７ｂ，１７ｃ，１７ｄ……液排出用のバ
ルブ、１８……排出管、１９ａ，１９ｂ……液供
給用バルブ、２０ａ，２０ｂ……液供給用管。
Figure 1 is a characteristic diagram showing the relationship between the number of treatments and tetrachlorethylene concentration, Figure 2 is a characteristic diagram showing the relationship between tetrachlorethylene concentration and specific gravity, and Figure 3 is a characteristic diagram showing the relationship between the temperature, viscosity, and specific gravity of the stripping solution. FIG. 4 is a system diagram showing an example of a resist stripping apparatus according to the present invention. 1, 2...tank containing resist stripping liquid,
3, 4...Tank containing organic solvent, 5...Transfer system for basket containing wafer, 6...Tank 1
7... Hydrometer of tank 2, 8... Control system, 9... Heater of tank 1, 10... Heater of tank 2, 11... Storage tank for unused resist stripping liquid , 12... Infrared lamp for drying, 13... Heater for tank 3, 14...
...Heater for tank 4, 15...Specific gravity sensor for tank 1, 16...Specific gravity sensor for tank 2, 1
7a, 17b, 17c, 17d... valve for liquid discharge, 18... discharge pipe, 19a, 19b... valve for liquid supply, 20a, 20b... pipe for liquid supply.
Claims (1)
の有機レジスト剥離液の比重を常温において測定
する比重測定手段と、該比重を測定した結果が予
め定めた値以下のときには該レジスト剥離液を新
しい有機レジスト剥離液に交換する液交換手段
と、前記比重を測定した結果が前記予め定めた値
以上のときは前記有機レジスト剥離液を規定の温
度に加熱する加熱手段と、有機溶媒液のタンク
と、前記有機レジスト剥離液のタンクから前記有
機溶媒液のタンクに処理対象物を順次移送する移
送手段とを備えたレジスト自動剥離装置。1. A tank for an organic resist stripping solution, a specific gravity measuring means for measuring the specific gravity of the organic resist stripping solution in the tank at room temperature, and when the result of measuring the specific gravity is below a predetermined value, the resist stripping solution is replaced with a new organic resist stripping solution. a liquid exchange means for replacing the resist stripping solution with a resist stripping solution; a heating means for heating the organic resist stripping solution to a specified temperature when the result of measuring the specific gravity is equal to or higher than the predetermined value; and a tank for an organic solvent solution; A resist automatic stripping apparatus comprising: a transfer means for sequentially transferring a processing object from the organic resist stripping liquid tank to the organic solvent liquid tank.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5633281A JPS57172725A (en) | 1981-04-16 | 1981-04-16 | Automatic resist exfoliating device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5633281A JPS57172725A (en) | 1981-04-16 | 1981-04-16 | Automatic resist exfoliating device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57172725A JPS57172725A (en) | 1982-10-23 |
| JPS628016B2 true JPS628016B2 (en) | 1987-02-20 |
Family
ID=13024239
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5633281A Granted JPS57172725A (en) | 1981-04-16 | 1981-04-16 | Automatic resist exfoliating device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57172725A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100556503B1 (en) * | 2002-11-26 | 2006-03-03 | 엘지전자 주식회사 | Control Method of Drying Time for Dryer |
-
1981
- 1981-04-16 JP JP5633281A patent/JPS57172725A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57172725A (en) | 1982-10-23 |
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