JPS627137A - Solder supplying method and apparatus therefor - Google Patents

Solder supplying method and apparatus therefor

Info

Publication number
JPS627137A
JPS627137A JP60145841A JP14584185A JPS627137A JP S627137 A JPS627137 A JP S627137A JP 60145841 A JP60145841 A JP 60145841A JP 14584185 A JP14584185 A JP 14584185A JP S627137 A JPS627137 A JP S627137A
Authority
JP
Japan
Prior art keywords
solder
heating container
hollow chamber
specific atmosphere
die
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60145841A
Other languages
Japanese (ja)
Inventor
Toshihiro Kato
加藤 俊博
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP60145841A priority Critical patent/JPS627137A/en
Publication of JPS627137A publication Critical patent/JPS627137A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/741Apparatus for manufacturing means for bonding, e.g. connectors
    • H01L24/743Apparatus for manufacturing layer connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/741Apparatus for manufacturing means for bonding, e.g. connectors
    • H01L2224/743Apparatus for manufacturing layer connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/83053Bonding environment
    • H01L2224/83091Under pressure
    • H01L2224/83093Transient conditions, e.g. gas-flow

Abstract

PURPOSE:To mold in the desired shape with quantification without oxidation by extrusion molding a solder maintained at liquid-phase temperature or lower in specific atmosphere, thereby obtaining a new beautiful solder surface. CONSTITUTION:A heating vessel 2 having a hollow chamber 1 is mounted, and, to maintain the chamber 1 in specific atmosphere, a connecting passage 6 is provided, and gas such as nitrogen gas is supplied. A solder layer laminated on the heating vessel 2 and extrusion molded enable to flow in a vertical direction. A heater 11 and a thermocouple 12 are buried in an enclosure 10 for surrounding a linear 9, and a fine hole 14 which communicates from the die of the bottom of the vessel passes a die holder 13. A solder 18 is disposed in a space adjacent to the die, controlled to be heated by the heater 11 and the thermocouple 12 to the liquid-phase temperature or lower, and extrusion molded by a pressing plate 15 and a plunger 17.

Description

【発明の詳細な説明】 〔発明の技術分野〕 この発明は箪導体ウェハを分割細分化し−て得られる半
導体ペレットを、絶縁物等の支持体に固定した導体に半
田マウントする場合に適用する半田供給方法及び供給装
置に関する。
[Detailed Description of the Invention] [Technical Field of the Invention] The present invention relates to a solder method which is applied when semiconductor pellets obtained by dividing and finely dividing a conductor wafer are solder mounted to a conductor fixed to a support such as an insulator. This invention relates to a supply method and a supply device.

〔発明の技術的背景〕     ゛ 従来から、セラミック等の絶縁物に形成した導体層に半
導体ウェー八をマウントするに当っては半田を利用する
方式も利用されている。勿論この半田を載置する導体層
は絶縁物に形成される場合に限らずリードフレーム等を
直接利用する方式も多用されている。
[Technical Background of the Invention] Conventionally, a method using solder has been used to mount a semiconductor wafer on a conductor layer formed on an insulating material such as ceramic. Of course, the conductor layer on which the solder is placed is not limited to the case where it is formed of an insulating material, and methods in which a lead frame or the like is directly utilized are also frequently used.

これらの方式に使用される半田供給装置では定められた
寸法に切断したリボン状の半田を真空チャックに把持し
て、マ、ウントする導体層に移送して熱圧着即ちダイボ
ンディングする方法が一般的であった。
The solder supply equipment used in these methods generally uses a vacuum chuck to hold ribbon-shaped solder cut to a specified size, transfer it to the conductor layer to be mounted, and perform thermocompression bonding, that is, die bonding. Met.

一方、最近その販売量が増大している高出方用個別半導
体装置例えばジャイアントトランジスタ等にあってはそ
の特性上要求される熱抵抗値が厳、しくなっており、こ
の観点から半田付は後に形′成されるボイド(Void
 )も当然その生成量をなるべく小さくなるよう配慮さ
れている。
On the other hand, in the case of individual semiconductor devices for high output power, such as giant transistors, whose sales volume has been increasing recently, the thermal resistance value required due to their characteristics has become stricter, and from this point of view, soldering was Void formed
) is also naturally considered to minimize the amount of generation.

この要求を満す手法としては溶融半田を粒状に形成しこ
れを半田マウントに適用されている。
A method to meet this requirement is to form molten solder into particles and apply them to solder mounts.

〔背景技術の問題点〕[Problems with background technology]

先ず、リボン状の半田は圧延ロールによって得られるた
めに、この半田表面には酸化膜や潤滑油等の残留による
有機皮膜等が形成されているため、半田の濡れが悪く溶
融半田に気体を取り込む頻度が大きくボイドができ易い
欠点がある。ひいては、高出力が要求されるトランジス
タ、ダイオードならびにICの熱放散性を阻害して定格
出力が得られず、それ等の歩留低下の基となっている。
First, since ribbon-shaped solder is obtained using a rolling roll, an oxide film or an organic film due to residual lubricating oil is formed on the surface of the solder, resulting in poor wetting of the solder and the incorporation of gas into the molten solder. The disadvantage is that the frequency is high and voids are easily formed. Furthermore, the heat dissipation properties of transistors, diodes, and ICs that require high output are inhibited, and the rated output cannot be obtained, which is the cause of a decrease in yield.

一方、溶融半田を利用する半田ディスペンス法では当然
であるが表面酸化がないため半田層の濡れは良好である
。しかし、定量制御が難しく特定の寸法以上のペレット
しか適用が困難である。
On the other hand, in the solder dispensing method using molten solder, there is no surface oxidation, so wetting of the solder layer is good. However, quantitative control is difficult and it is difficult to apply only pellets larger than a certain size.

と言うのは、この半田ディスペンス法は溶融半田をボー
ル間の細孔から落下させて粒状半田を形成する手法を採
用しているため、このボールの傍からも溶融半田が滲み
出すため粒状半田の定量制御が難しく、特に小寸法のも
のはその製造が極めて困難であった。
This is because this solder dispensing method uses a method in which molten solder falls through the pores between the balls to form granular solder, so the molten solder oozes out from the sides of the balls, causing the granular solder to ooze out. Quantitative control is difficult, and production of small-sized products is extremely difficult.

〔発明の目的〕[Purpose of the invention]

本発明は上記の難点を克服した新規な半田供給方法及び
その供給装置を提供するもので、特に酸化されず、定量
性を備え更に所望の形状に成形可能とするものである。
The present invention provides a novel method and apparatus for supplying solder that overcomes the above-mentioned difficulties, and is particularly resistant to oxidation, has quantitative properties, and can be molded into a desired shape.

〔発明の概要〕[Summary of the invention]

ところで、液相温度以下に維持した半田を押出し成形す
ると新しい綺麗な半田表面が得られる事実を本発明者は
確認しており、この事実を基に本発明は完成された。
By the way, the present inventor has confirmed the fact that a new and beautiful solder surface can be obtained by extrusion molding solder maintained at a temperature below the liquidus temperature, and the present invention was completed based on this fact.

本発明方法では半田を液相温度以下に維持するに当って
、その酸化を防止し押出し成形に伴う残渣発生を防ぐ観
点から特定の雰囲気の許で実施し、この押出し成形した
半田を加熱導体にマウントして溶融する際にもこの特定
雰囲気下で実施する手法を採用した。この特定雰囲気を
形成する気体としては不活性ガス、還元性ガスならびに
これらの混合物が適用可能であり、具体的には不活性ガ
スとして窒素、アルゴン、クリプトン、還元性ガスとし
て水素、混合物として水素+窒素、多少の酸素を混入し
た水素である。このように本発明における特定雰囲気は
上記気体雰囲気を意味する。
In the method of the present invention, in order to maintain the solder below its liquidus temperature, it is carried out in a specific atmosphere from the viewpoint of preventing its oxidation and the generation of residue due to extrusion molding, and the extruded solder is heated to a heating conductor. We also adopted this method of mounting and melting under this specific atmosphere. Inert gases, reducing gases, and mixtures thereof can be used as gases that form this specific atmosphere. Specifically, nitrogen, argon, and krypton are used as inert gases, hydrogen is used as reducing gas, and hydrogen + gas is used as mixtures. It is hydrogen mixed with nitrogen and some oxygen. Thus, the specific atmosphere in the present invention means the above-mentioned gas atmosphere.

この半田供給方法を実現する供給装置では押出し成形す
る温度と、導体にマウントした半田を溶融する温度が相
違するためと、一定の速度で搬送された導体に半田を供
給して量産に資する配慮から押出し成形する工程と半田
を供給する工程とを別の場所で実施する。
In the supply device that realizes this solder supply method, the temperature for extrusion molding and the temperature for melting the solder mounted on the conductor are different, and the solder is supplied to the conductor transported at a constant speed, which contributes to mass production. The extrusion molding process and the solder supply process are performed at different locations.

このために、押出し成形に当っては有底筒状の加熱容器
を準備しその底部に半田を通過させる細孔を設け、更に
中空室を備える他の加熱容器を設ける。この中空室には
導体を搬送し前記細孔に対向する中空室に透孔を形成し
て押出し成形され、た半田をこの導体に導いて溶融する
手法を採用した。
For this purpose, for extrusion molding, a cylindrical heating container with a bottom is prepared, a pore is provided at the bottom of the heating container through which the solder passes, and another heating container having a hollow chamber is provided. A method was adopted in which a conductor was conveyed into this hollow chamber, a through hole was formed in the hollow chamber opposite to the pore, and extrusion molding was performed, and the solder was guided to the conductor and melted.

この押出し成形した半田を定量的に制御する手段として
は前記有底筒状の加熱容器底部にダイスを設置すると良
い。
As a means for quantitatively controlling the extruded solder, it is preferable to install a die at the bottom of the bottomed cylindrical heating container.

〔発明の実施例〕[Embodiments of the invention]

第1図ならびに第2図を参照して本発明を詳述する。 The present invention will be described in detail with reference to FIGS. 1 and 2.

第1図は本発明方法を実施するのに適用する半田供給装
置の概略断面図、第2図はその一部を示す断面図である
FIG. 1 is a schematic sectional view of a solder supply device applied to carry out the method of the present invention, and FIG. 2 is a sectional view showing a part thereof.

第1図及び第2図に示した中空室ωを備えた加熱容器■
を設置する。この加熱容器にはヒータ■及び熱電対に)
を埋設して中空室■に搬送される導体0を後述する半田
融点以上に加熱及び制御可能である。この例に示した搬
送される導体■としてはセラミック等の絶縁支持体0に
銅又はタングステン層上にNiメッキを施して回路パタ
ーンである。
Heating container with hollow chamber ω shown in Figures 1 and 2■
Set up. This heating container has a heater ■ and a thermocouple)
It is possible to heat and control the conductor 0, which is buried and transported to the hollow chamber (2), to a temperature higher than the solder melting point, which will be described later. The conductor 1 to be transported in this example is a circuit pattern formed by plating Ni on a copper or tungsten layer on an insulating support 0 made of ceramic or the like.

これは−例であって集、積回路素子等は導電性金属で作
られたいbゆるリードフレームを搬送する場合もある。
This is just an example; an integrated circuit device, etc. may carry a lead frame made of conductive metal.

更に、この中空室ωは特定雰囲気に維持するため加熱容
器■外と連通ずる通路0を設置して前述の気体例えば窒
素ガスもしくは窒素ガスに1.0容量%を流す、加熱容
器■の中空室ωには後述する半田層が通過する細孔を嵌
合する透孔■を設置する。
Furthermore, in order to maintain a specific atmosphere in this hollow chamber ω, a passage 0 communicating with the outside of the heating container 1 is installed, and the above-mentioned gas such as nitrogen gas or 1.0% by volume of nitrogen gas is flowed into the hollow chamber of the heating container 2. At ω, a through hole (2) is provided which fits into a hole through which a solder layer (to be described later) passes.

一方有底筒状の加熱容器■を準備するが、第1図に示す
ように中空室■を備えた加熱容器■に積層して押出し成
形された半田層を鉛直方向に流動可能とする。この有底
筒状の加熱容器■には空間部分があり、その内壁をライ
ナ0で構成し、このライナを取り囲む外III (10
)にはヒータ(11)ならびに熱電対(12)を埋設し
て半田の液相温度以下に加熱制御可能とする。有底筒状
の加熱容器底部にはダイスホルダ(13)が設置され、
これに隣接する前記空間部分にダイス(14)を配置し
、このダイスがら連通する細孔(14)は、ダイスホル
ダ(13)を貫通する。一方ダイスホルダ(13)には
中空室ωに設けた透孔■に嵌合する突出部(15)を一
体に設置し。
On the other hand, a cylindrical heating container (2) with a bottom is prepared, and as shown in FIG. 1, a solder layer laminated and extruded into the heating container (2) having a hollow chamber (2) can flow in the vertical direction. This bottomed cylindrical heating container (■) has a space, the inner wall of which is made up of liner 0, and the outer wall (10) surrounding this liner.
) is embedded with a heater (11) and a thermocouple (12) so that heating can be controlled to below the liquidus temperature of the solder. A dice holder (13) is installed at the bottom of the bottomed cylindrical heating container.
A die (14) is placed in the space adjacent to this, and a pore (14) communicating with the die passes through the die holder (13). On the other hand, the die holder (13) is integrally provided with a protrusion (15) that fits into the through hole (2) provided in the hollow chamber (ω).

その中心部分には前記細孔(14)が連続して貫通され
る。
The pores (14) are continuously penetrated through the central portion thereof.

前記空間部分は半田を押出し成形する押圧板(16)な
らびにプランジャ(17)を設けて半田供給装置を構成
する。半田(18)はダイス(14)に隣接する前記空
間部分に配置して、その液相温度以下にヒータ(11)
及び熱電対(12)によって加熱制御後押圧板(16)
ならびにプランジャ(17)によって押出し成形するが
潤滑油は使用しない。
The space portion is provided with a press plate (16) for extruding solder and a plunger (17) to constitute a solder supply device. The solder (18) is placed in the space adjacent to the die (14), and the heater (11) is heated to below its liquidus temperature.
and a pressing plate (16) after heating control by a thermocouple (12).
Also, extrusion is carried out using a plunger (17), but no lubricating oil is used.

この半田の押出し成形等を実施する前に、この有底筒状
の加熱容器■は前述の特定雰囲気内に配置されており、
更に中空室中も通路0を介して同じ雰囲気に維持され、
しかも突出部(15)は透孔■によって中空室■に嵌入
されているため半田が融化される恐れは解消できた。
Before carrying out extrusion molding of the solder, etc., this bottomed cylindrical heating container ■ is placed in the above-mentioned specific atmosphere.
Furthermore, the same atmosphere is maintained in the hollow chamber via passage 0,
Moreover, since the protrusion (15) is fitted into the hollow chamber (2) through the through hole (2), the fear of solder melting can be eliminated.

更に中空室のに配置した導体■は予め半田の液相温度以
上に加熱制御されている。
Furthermore, the conductor (2) placed in the hollow chamber is heated in advance to a temperature higher than the liquidus temperature of the solder.

プランジャ(17)ならびに押圧板(16)によって加
圧された半田はダイス(14)により所望の形状に一定
量を押出し成形されるが、その完了後有底筒状の加熱容
器は下降して導体■上に押しつけられると共に溶融する
。一方加熱容器(へ)は上昇して元の位置に戻り半田盛
りが完了する。
A certain amount of the solder pressurized by the plunger (17) and the press plate (16) is extruded into a desired shape by the die (14), but after this is completed, the bottomed cylindrical heating container is lowered to form the conductor. ■It melts as it is pressed onto the top. Meanwhile, the heating container rises and returns to its original position, completing the solder application.

半田としては鉛合金、錫合金、インジュウム合金等が適
用可能であり、鉛−錫一銀(錫5重量%、銀5重量%、
鉛BaQ融点292℃)の場合、押出し温度250〜2
80℃、押出シ圧カ3o〜50kg/Im″テ行ゎれ中
空部を備える加熱容器■の導体■は約350℃に余熱さ
れる。
As the solder, lead alloy, tin alloy, indium alloy, etc. can be used, and lead-tin silver (tin 5% by weight, silver 5% by weight,
In the case of lead BaQ (melting point 292℃), extrusion temperature 250~2
The conductor (2) of the heating container (2), which is provided with a hollow part, is preheated to about 350C at 80C and an extrusion pressure of 3 to 50 kg/Im.

第2図に示すように半田(19)の盛り上り完了後、中
空室のに設けた透孔■に半導体ペレット(21)を吸引
保持したコレット(20)を移送して、半田(19)に
押圧し、必要ならばいわゆるスクラブ運動を与えて固着
する。
As shown in Fig. 2, after the solder (19) has built up, the collet (20) sucking and holding the semiconductor pellet (21) is transferred to the through hole (■) provided in the hollow chamber, and the collet (20) is transferred to the solder (19). Press down and, if necessary, give a so-called scrubbing motion to fix it.

〔発明の効果〕〔Effect of the invention〕

従来の半田供給方法によると、形成される内部ボイド(
Void)はペレット面積の2%〜15%であったが、
本発明方法によると1%以下に制御可能となったので、
熱抵抗に起因する歩留り低下が大幅に向上された。
According to traditional solder supply methods, internal voids (
Void) was 2% to 15% of the pellet area, but
According to the method of the present invention, it is possible to control the amount to 1% or less.
Yield loss due to thermal resistance has been significantly improved.

即ち、ジャイアントトランジスタモジュール等ではペレ
ットサイズlow角位迄しが従来方法が適用可能でなく
より小形の機種では熱抵抗が0.45℃/Wとなったの
に対して、本発明方法では7−角のペレットでも熱抵抗
が0.4℃/Wと良好な結果を示した。
In other words, in the case of giant transistor modules, etc., the conventional method cannot be applied to the pellet size up to the low angle position, and the thermal resistance of smaller models is 0.45°C/W, whereas the method of the present invention has a thermal resistance of 7-7°C/W. Even the square pellets showed good results with a thermal resistance of 0.4° C./W.

内部ボイドが少ないため熱疲労試験でも従来方法で30
にサイクルを示していたのが100Kサイクル以上と著
しく向上した。
Due to the small number of internal voids, thermal fatigue tests were performed using the conventional method.
The cycle time was significantly improved to over 100K cycles.

尚、加熱容器■に投入される半田ビレットは大口径の状
態で購入可能であるため安価で入手できる。
Incidentally, the solder billet to be put into the heating container (2) can be purchased in a large diameter state and therefore can be obtained at low cost.

しかも、ペレット形状に合わせてダイス形状を選定でき
るので最小限の半田量でマウント可となる。
Moreover, since the die shape can be selected according to the pellet shape, it can be mounted with a minimum amount of solder.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明に係る半田供給装置の断面図第2図はそ
の一工程時の断面構造を示す図である。
FIG. 1 is a sectional view of a solder supply device according to the present invention, and FIG. 2 is a sectional view showing its sectional structure during one step.

Claims (2)

【特許請求の範囲】[Claims] (1)特定雰囲気内に保持する半田をその液相温度以下
で押出し成形してから、この特定雰囲気に配置する加熱
導体に供給して溶融することを特徴とする半田供給方法
(1) A solder supply method characterized by extruding solder held in a specific atmosphere at a temperature below its liquidus temperature and then supplying the solder to a heating conductor placed in the specific atmosphere to melt it.
(2)中空室を備える加熱容器と、この中空室に配置す
る導体層と、前記中空室を特定の雰囲気に保持する手段
と、有底筒状の他の加熱容器と、この有底筒状の他の加
熱容器底部に形成する細孔と、この細孔に対向して配置
する前記中空室に設ける透孔と、前記特定の雰囲気を維
持する前記有底筒状の加熱容器に配置する半田と、この
半田をその液相温度以下で押出し成形する手段とを具備
することを特徴とする半田供給装置。
(2) A heating container having a hollow chamber, a conductor layer disposed in the hollow chamber, means for maintaining the hollow chamber in a specific atmosphere, another heating container having a cylindrical shape with a bottom, and a cylindrical heating container with a bottom; a pore formed in the bottom of the other heating container, a through hole provided in the hollow chamber arranged opposite to the pore, and a solder arranged in the bottomed cylindrical heating container that maintains the specific atmosphere. and means for extruding the solder at a temperature below its liquidus temperature.
JP60145841A 1985-07-04 1985-07-04 Solder supplying method and apparatus therefor Pending JPS627137A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60145841A JPS627137A (en) 1985-07-04 1985-07-04 Solder supplying method and apparatus therefor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60145841A JPS627137A (en) 1985-07-04 1985-07-04 Solder supplying method and apparatus therefor

Publications (1)

Publication Number Publication Date
JPS627137A true JPS627137A (en) 1987-01-14

Family

ID=15394340

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60145841A Pending JPS627137A (en) 1985-07-04 1985-07-04 Solder supplying method and apparatus therefor

Country Status (1)

Country Link
JP (1) JPS627137A (en)

Similar Documents

Publication Publication Date Title
EP1578559B1 (en) Bonding method
US5219794A (en) Semiconductor integrated circuit device and method of fabricating same
US3883946A (en) Methods of securing a semiconductor body to a substrate
JP3066963B1 (en) Method and apparatus for forming solder bumps
KR100957078B1 (en) Electrically isolated power device package
TWI556373B (en) Systems for processing semiconductor devices, and methods of processing semiconductor devices
JPH0992682A (en) Soldering method and soldering device
US7690551B2 (en) Die attach by temperature gradient lead free soft solder metal sheet or film
WO2019185391A1 (en) Method of assembling a semiconductor power module component, semiconductor power module with such a module component having component parts soldered together and component parts sintered together, as well as manufacturing system therefor
Frear Packaging materials
JP2007123516A (en) Heat spreader, its manufacturing method, and semiconductor device using the same
US3896542A (en) Method of sealing electrical component envelopes
US3226804A (en) Method of soldering peltier devices
CN111490027B (en) Framework support metal film, preparation method and sintering method
JPS627137A (en) Solder supplying method and apparatus therefor
CN105671473A (en) Method and device for filling of vertical through hole
JP2002280509A (en) Semiconductor device and method for manufacturing the same
JP5308107B2 (en) Circuit device manufacturing method
US3036937A (en) Method for manufacturing alloyed junction semiconductor devices
FR2584861A1 (en) METHOD FOR FIXING SEMICONDUCTOR PELLETS AND RESULTING PRODUCT
JP3481025B2 (en) Pellet bonding equipment
JP2011044530A (en) Solder joint method and solder joint device
US20200373269A1 (en) Joined structure, joining method, and joining material
JP2006237275A (en) Process for producing semiconductor device and semiconductor device
JP3336999B2 (en) Bump sheet, bump forming apparatus and bump forming method using the same