JPS6266633A - Pattern defect correcting apparatus - Google Patents

Abstract

PURPOSE:To accurately correct a defective edge at a high speed by using a converged ion beam of 0.1mum of diameter to correct the pattern defect of 1mum or less, and roughly correcting with a laser beam and then correcting the defective edge with the converged ion beam to correct a defect of 1mum or larger. CONSTITUTION:Various types of corrections are executed by controlling an ion beam 14, a laser beam 15 read out in a control computer 19 for defect information from a memory 22 and a sample tray driver 16, detecting by a detector 17 the sample position from a marker signal 29, and controlling the switching of a blanking 12 of the ion beam and a shutter 13 of a laser in cooperation with a control computer 20. When a pattern line width is 1mum or less, a defect is removed by sputtering with converged Ga ion beam of approx. 0.1theta dia. when the line width is 1mum or larger, the section of the laser beam is controlled to roughly correct is, and a defective edge is accurately corrected by the converged ion beam. According to this construction, the defect of a fine circuit pattern of a plurality of line width can be accurately corrected at a high speed.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an apparatus for correcting defects in circuit patterns of semiconductor devices or photomasks.

[Conventional technology]

Semiconductor devices such as LSIs are made up of extremely fine circuit patterns having multiple line widths, and are susceptible to pattern defects and defective products due to the influence of small amounts of dust mixed in during the manufacturing process. In particular, regarding pattern formation technology of 1 pm or less, it is necessary to use a photomask or
Fine defects on the borosilicate mask are transferred to the wafer every nine evaporators, resulting in a significant drop in yield.

Therefore, mask defects should be corrected as much as possible.

Must be used for transcription.

For this purpose, a conventionally used device will be explained with reference to FIG. FIG. 4 is a block diagram of a defect repair device using a lep beam. C5) is a laser head such as a Nd:YAG laser, (6) and (7) are a shutter for turning on and off the laser beam, and an aperture for focusing, (8) is a lens, and (9) is a sample.

αQ is a sample stage. (To), 00. αQ is 1f for each part
These are a shutter control device, a laser beam control device, and a sample stage drive circuit for controlling ijJ. Hunger is t, 13,
ill, is a higher-level control device for the lower-level control device of σ.

Amendments are made as follows. Based on the information regarding the correction location obtained by the pattern defect inspection device, the aperture (7) is controlled by the laser beam control device (g), and the defective portion is irradiated at the same time as the shutter (6) is opened. At that time, fine adjustment of the aperture may be performed manually. The irradiated laser beam, due to its thermal effect, evaporates the mask material forming pattern defects.

Let's go ahead and make some corrections. For example, when using a Nd:YAG laser, a pattern defect of 5 μm can be created in about 0.5 seconds.
jIt will be corrected.

[Problem that the invention seeks to solve]

Conventional defect equipment uses a method of irradiating a laser beam to raise the temperature of the defect and evaporate the defect.
It is possible to repair 4 extremely minute IC defects. Also, correction of larger areas;

The problem is that it is not possible to increase the positional accuracy of the pressure guiding point.

In order to solve the above-mentioned problems, this invention
The purpose is to obtain a device that can repair fine circuit pattern defects of 1 μm or less, and can simultaneously repair large pattern defects of 1 μm or more with high throughput and high precision. do.

[Means for solving problems]

This pattern defect correction device has a diameter of 0.1 mm.
It is believed that very fine pattern defects of 1 μm or less can be repaired using a focused ion beam of about 1 μm.

For defects of 1 .mu.m or more, a laser beam is used for rough correction, and at the same time, a focused 1-on beam is used to correct the edge portion of the pattern defect.

[For production]

The pattern defect repair device according to the second aspect of the present invention not only repairs pattern defects of 1 μm or less to a high H1 degree (,1 μm
High speed and high fI11 even for pattern defects of m or more
Can be corrected at any time.

[Embodiments of the invention]

An embodiment of the present invention will be described with reference to the drawings. Figure 1 shows
1 shows a block diagram of the device of the invention; FIG. (1) is an ion source for emitting an ion beam made of heavy elements; (2) is a flanking electrode for turning on and off the ion beam; (3) is an electrostatic lens for focusing the ion beam; (4) is a deflection pole 11E that deflects the ion beam. These are the ion source (1), flanking electrode (2), t%'IL lens (3), and deflection quadrupole (4).The ion beam mirror 1 of the vacuum chamber QCJ.
It is installed in two parts. (5) is the laser head that generates the laser beam, (6) is the shutter that turns on and off the radar beam (7) is the aperture that narrows down the laser beam, and (8) is for convergence. (9) is a sample such as a mask, QQ is a sample stage, and these are attached to the vacuum chamber (Jl).
) is installed at a position where both the ion and laser beams can enter. Furthermore, the inside of the vacuum chamber 0υ in which each of the above parts is attached is maintained at a high vacuum.

Furthermore, a description will be added of the control system that controls each of the above parts. (6) is a planking electrode control device, and (to) is a printer control device, which are controlled by a planking signal circle sent from the top control device 2D. αΦ is an on-beam controller U that controls the electrostatic lens (3) and polarization polarization (4), and aS is a laser beam controller 411J that controls the aperture (7).

It is controlled by a defect integrity instruction signal A (to) and a defect information instruction B- sent from the high-level control device 1211. Further, qQ is a sample stand and a vomiting stand, which are controlled by a fire information instruction signal A (to) and a sample stand stop signal c91 sent from the host controller 3D. 0η is a sample position detection device that takes in the marker signal C9 and outputs a sample position detection signal ■. Furthermore, the upper control device eυ imports the defect information No. 1 (iD) from the large defect information 14 storage device ■ that stores the position, shape, size, etc. of the defect, and controls the lower control devices α to αQ. The controller that outputs the defect information signal l@ takes in <\-i・a (1g) and the sample position detection signal ■, and sends the flanking signal 125° defect information processing signal BC'71 and the sample table stop signal (to). It is composed of a control computer B which outputs data.A& is a scanning signal and synchronization signal generating device which sends a scanning signal and a synchronization signal 1J to each device.

The operation of the apparatus of the present invention will be explained using FIG. 781, FIG. 2, and FIG. 3. Here, FIG. 2 shows the flow of control of the apparatus of the present invention. FIG. 3 shows a defect correction method of the apparatus of the present invention.

The control of the device of the present invention is as shown in FIG.
(n)...Flows in the order of M. In (1), the information stored in the defect information storage device 1 (location, shape, size, line width) of the butter 7 defects is read by the TT calculator AQ9.

A defect information instruction signal A (e) indicating the defect position is outputted, and one signal is passed to the control computer B■. At the same time 4
Recognizes the size and shape of the pit and makes corrections -
hand over. In (II), the flame information signal A (to) output in (1) is taken in by the ion beam controller αG, the norther beam controller αG, and the sample stage drive device αQ.

Depending on the signal, electrostatic lens (3), polarization 11c pole (4)
, set the aperture (7) and move the sample stage QOk f8. (Although omitted in Figure @1, in ■, we tested Marker No. 16 (1.1.t.23) obtained by irradiating one sample with an ion beam or laser beam. Output device it u* v) Output the sample position 'jl detector number e'. (translation) I go, III
J Calculation Division I B , outputs a substitute error δ warning instruction signal Bc-'71 for correcting the ion beam irradiation position and the shape and size of the hoop. At the same time, the control gtg iso A (19) reads between the next defect information signals and continues the invasive type processing.

In M, the sample stage and driver uQ fix the sample stage (10), and the ion beam nJ H device α4.v-The beam control device jλu3 or the beam Corrections are made to the Q setting, etc. At M, based on the information regarding the correction, a flanking signal G is generated, the on/off of the ion beam and laser beam is controlled, and the beam is directed to the pattern defect. Do what is right.

cv) ic g, as shown in Fig. 3, there are two ways depending on the size of the defect and the line width (j).If the line width is less than IAT+, (a)
As shown in , a diameter of 0.0 mm made of heavy elements such as Ga.
Using a focused ion beam of about 1 μm, the pattern material forming the defective portion is removed by sputtering and repaired. An example is an irradiated ion beam cross section. In this case, the scanning of the ion beam is.

Vector control is performed by the ion beam controller α1 based on the defect information instruction signal B which provides information on the shape and size of the defect. A 0.1 μm defect can be repaired in about 2 seconds using a 20 keV Ga ion beam. In addition, in the case of defects with a line width of 1 μm or more, the third
Figure (b) + As shown, the laser beam focuses 1
Perform 0 using O/Beam together. First, the laser beam controller t(
), its shape and size are controlled and rough correction is performed. (b) is a cross section of the irradiated hoop beam. In this case, the accuracy of correction using the laser beam is approximately 0.2 to 0.5 μm due to the influence of heat. Therefore, the size of the laser beam is set to be smaller than the size of the defect. Next, for the edge part of the defect, line width 0.1
In the same way as in the case of μm or less, a focused ion beam is used to perform correction to a high nIl&t. In this case, the scanning of the ion beam is controlled by the ion beam controller α based on the edge defect information instruction signal Be extracted by the control computer Bω. In the case of Nd: YAG laser, it takes about 80.5 seconds to repair a 5 μm defect, which is faster than using only an ion beam, which takes about 1 degree, and it is possible to repair a defect of 1 degree by 4 degrees. It is.

After the operation of M is completed, control returns to (1).

The information related to the next modification will be stored in the control computer B [1] (as soon as the VD is completed, the control computer will be handed over to the control computer and the correction will be made).

tS. In the above embodiment, a masker was used as one sample (8), but a semiconductor element may be used instead.

In this case, one layer is formed on the element. pattern material n
Ic Response (:, Is it necessary to select the ion source (1) and adjust the energy of the 1-on beam?

〔Effect of the invention〕

As described above, according to the present invention, very fine pattern defects of 1 μm or less can be accurately corrected using a focused ion beam with a diameter of about 0.1 μm, and
For the above-mentioned pattern defects, we have designed a system that uses a focused ion beam and a laser beam in combination to simultaneously increase the accuracy and efficiency of correction. It also has the effect of achieving high throughput correction.

[Brief explanation of the drawing]

FIG. 1 is a block diagram of a pattern defect correction apparatus according to an embodiment of the present invention, FIG. 2 shows its control flow, FIG. 3 shows its correction method, and FIG. 4 shows a conventional embodiment. In the figure, (1) is the ion source, (2) is the planking electrode, (3) is the electrostatic lens, (4) is the deflection electrode, (5)
is a laser head, (6) is a shutter, (7) is an aperture, (8) is a lens, (9) is a sample, αQ is a sample stage, (6) is a vacuum chamber, (6) is a planking electrode control device, Q3 is a shutter control device, and αhiro is an ion beam control device. al is a laser beam control device, and a. is a sample stage drive device. αη is a sample position detection device, 4 is a scanning signal and synchronization signal generator, α9 is a control computer A, and f21m is a control computer B
, (2) Hatto system # device, ■ is a defect information storage device. (to) is the scanning signal, (to) is the synchronization signal, ca is the planning signal, (7) is the defect information instruction signal A, (b) is the defect information instruction signal B, (support) is the sample stage control signal, and the is a marker signal, ■ is a sample position detection signal, 31J is a defect information signal, (
(to) is a signal instructing the shape, size, and correction method of the pattern defect. (to) is a pattern defect with a line width of 1 p'rn or less, (to) is a pattern defect with a line width of 1 μm or more, (to) is a cross section of the irradiated ion beam, ... is the scanning direction, @ is the irradiated laser beam A cross section is shown. μg, and the same reference numerals in the figures indicate the same or equivalent parts.

Claims (1)

[Claims] (1) An ion source that emits a correction ion beam, a planking electrode, an electrostatic lens and a deflection electrode that irradiates a desired pattern defect with a focused ion beam, a laser head and shutter that emits a correction laser beam. , a vacuum chamber equipped with an aperture that focuses the laser beam into a desired shape, a planking electrode, a control device that controls the shutter, an ion beam control device, a laser beam control device, a sample stage drive device, and a control signal provided to them. A pattern defect correction device comprising a host control device and a storage device that stores defect information.