JPS6263669A - Vapor depositing apparatus using electron beam - Google Patents

Vapor depositing apparatus using electron beam

Info

Publication number
JPS6263669A
JPS6263669A JP20317985A JP20317985A JPS6263669A JP S6263669 A JPS6263669 A JP S6263669A JP 20317985 A JP20317985 A JP 20317985A JP 20317985 A JP20317985 A JP 20317985A JP S6263669 A JPS6263669 A JP S6263669A
Authority
JP
Japan
Prior art keywords
evaporation
crucible
electron beam
evaporated
storage section
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP20317985A
Other languages
Japanese (ja)
Inventor
Masahiko Hiugaji
雅彦 日向寺
Tadao Miura
三浦 忠男
Kentaro Shimada
健太郎 嶋田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Tokuda Seisakusho Co Ltd
Original Assignee
Toshiba Corp
Tokuda Seisakusho Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokuda Seisakusho Co Ltd filed Critical Toshiba Corp
Priority to JP20317985A priority Critical patent/JPS6263669A/en
Publication of JPS6263669A publication Critical patent/JPS6263669A/en
Pending legal-status Critical Current

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  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

PURPOSE:To evaporate uniformly a material to be evaporated and to reduce a change in the rate of vapor deposition by forming a part for holding a material to be evaporated at the central part of a crucible and by making the crucible rotatable during the evaporation of the material to be evaporated. CONSTITUTION:This vapor depositing apparatus using electron beams is composed essentially of a vacuum vessel 11, a crucible 12 placed in the vessel 11, an electron beam generating part 15, and a rotating mechanism 13 for rotating the crucible 12 during the evaporation of a material 18 to be evaporated. The crucible 12 has a part 17 for holding a material to be evaporated at the central part and the material 18 put in the part 17 is evaporated by heating with electron beams.

Description

【発明の詳細な説明】 「発明の技術分野] 本発明は、るつぼ中の蒸発材料を電子ビームにより加熱
する電子ビーム蒸着装置に関する。
DETAILED DESCRIPTION OF THE INVENTION TECHNICAL FIELD OF THE INVENTION The present invention relates to an electron beam evaporation apparatus that heats evaporation material in a crucible with an electron beam.

[発明の技術的背景とその問題点] 電子ビーム加熱蒸着法は、蒸発材料の表面上で容易に高
い電力密度が得られ、効率の良い加熱ができるため、抵
抗加熱蒸着法に比べて生成膜の組成のずれや蒸発源から
の不純物混入が少ない等の長所をもち、高純度薄膜の生
成方法として広く用いられている。
[Technical background of the invention and its problems] The electron beam heating evaporation method can easily obtain high power density on the surface of the evaporation material and can perform efficient heating, so compared to the resistance heating evaporation method, the produced film is It is widely used as a method for producing high-purity thin films, as it has advantages such as less deviation in composition and less contamination of impurities from evaporation sources.

従来の電子ビーム蒸着装置は真空槽中におかれた荒型蒸
発るつぼ中の蒸発材料を電子銃より放射された電子ビー
ムにより加熱蒸発させ、同じ真空槽中におる被蒸着体に
凝着、付着させるものでおる。この場合蒸発材料に対す
る電子ビームの照射スポットは電子ビームが所定の電力
密度を発揮するよう集束されたものであり、その走査範
囲し一定の範囲に限られている。
In conventional electron beam evaporation equipment, the evaporation material in a rough evaporation crucible placed in a vacuum chamber is heated and evaporated by an electron beam emitted from an electron gun, and the material condenses and adheres to the object to be evaporated in the same vacuum chamber. It's something that will make you. In this case, the irradiation spot of the electron beam on the evaporated material is focused so that the electron beam exhibits a predetermined power density, and is limited to a certain scanning range.

第3図は従来用いられている電子ビーム蒸着装置を示す
構成図、第4図はこの電子ビーム蒸着装置で用いられる
るつぼの平面図である。
FIG. 3 is a block diagram showing a conventional electron beam evaporation apparatus, and FIG. 4 is a plan view of a crucible used in this electron beam evaporation apparatus.

この電子ビーム蒸着装置の真空槽1は図示しない排気系
により内部が所望の高真空に保持され、真空槽1の下部
には、たとえば銅等よりなる円盤状のるつぼ2が設置さ
れ、このるつぼは上面を水平にして回転可能となってい
る。
A vacuum chamber 1 of this electron beam evaporation apparatus is maintained at a desired high vacuum inside by an exhaust system (not shown), and a disk-shaped crucible 2 made of, for example, copper is installed at the bottom of the vacuum chamber 1. It can be rotated with the top surface horizontal.

また真空槽1の別の下部には、偏向電極3およびフィラ
メント4が設置され、るつぼ2の上面の所定の位置に円
弧状の電子ビーム5を照射し得るようになっている。
Further, a deflection electrode 3 and a filament 4 are installed in another lower part of the vacuum chamber 1, so that a predetermined position on the upper surface of the crucible 2 can be irradiated with an arc-shaped electron beam 5.

さらに蒸着の行われる基板6は、真空槽1の上部に蒸着
膜7を形成する面がるつぼ2に対向するよう装着されて
おり、るつぼ2と基板6との間にはステンレス等の金属
板よりなるシャッタ8が設けられている。
Furthermore, the substrate 6 on which vapor deposition is performed is mounted on the upper part of the vacuum chamber 1 so that the surface on which the vapor deposition film 7 is formed faces the crucible 2, and a metal plate such as stainless steel is placed between the crucible 2 and the substrate 6. A shutter 8 is provided.

なおこのシャッタ8は矢印方向に回動されて蒸着時間を
制御し、また蒸発材料を予価加熱してガス放出を行わせ
る時、放出された不純物ガスが基板を汚染するのを防止
するのに使用される。
The shutter 8 is rotated in the direction of the arrow to control the evaporation time, and is also used to prevent the released impurity gas from contaminating the substrate when preheating the evaporation material and releasing the gas. be done.

ざらに第4図に示すように、るつぼ2には上面の同一円
周上に平面視で弧状の蒸発材料収納部9aと、複数の円
形の蒸発材料収納部9b、9b・・・9bが設けられて
おり、それぞれの蒸発材料収納部9a、9b、9b・・
・9bには蒸着される材料が収容されている。
As roughly shown in FIG. 4, the crucible 2 is provided with an arc-shaped evaporation material storage section 9a in plan view and a plurality of circular evaporation material storage sections 9b, 9b, . . . 9b on the same circumference on the upper surface. and the respective evaporation material storage sections 9a, 9b, 9b...
- The material to be deposited is stored in 9b.

このような電子ビーム蒸着装置においては、蒸発月利収
納部0内の蒸発1.IU料7\の電子ビーム5)の照射
位置の変更は1君場または電場を用い!、:電子ビーム
5の偏向、あるいはるつぼ2の回転、1Jなわら、るつ
ぼ2の中心を軸とした蒸発材料収納部9の公転運動によ
ってなされる。
In such an electron beam evaporation apparatus, evaporation 1. Change the irradiation position of the electron beam 5) of the IU material 7\ using the 1-kun field or electric field! , : Deflection of the electron beam 5 or rotation of the crucible 2, 1 J, is achieved by the revolving movement of the evaporation material storage section 9 about the center of the crucible 2.

このような電子ビー・ム蒸看装置を用いてCr、Ti等
の高融点金属やA、e20:v、T!02、丁az O
5、ZrO2、Sio2、MqO等の誘電体物質等の蒸
着を行う場合、蒸着の進行にともなってるつぼ2内にれ
らの蒸発材料10の蒸石面が平面状を維持せず、一部の
みで蒸着が進行する穴掘り現象がしばしば児受けられる
Using such an electron beam evaporator, high melting point metals such as Cr and Ti, A, e20:v, T! 02, Ding az O
5. When performing evaporation of dielectric materials such as ZrO2, Sio2, MqO, etc., as the evaporation progresses, the vaporized surface of these evaporated materials 10 does not maintain a flat shape in the crucible 2, and only a portion A burrowing phenomenon in which vapor deposition progresses is often observed.

以下この様子を第5図を用いて説明する。This situation will be explained below using FIG.

一般に用いられている電子ビーム加熱のための電子銃は
、電子ビーム5が」−分に編向し・きれておらず、第5
図(A)に示すように蒸発材料収納部9内の蒸発材料1
0に対し、電子ビームが真上からあてられていない。し
たがって蒸発が進行して蒸発面が下がるにしたがい、第
5図(B)に示すように蒸発材料収納部9内でビームが
当たらない影の部分10aができる。さらに長時間の蒸
着においては、第5図(C)に示すように電子ビーム5
が蒸発材料収納部9の底に達するにもかかわらず影の部
分10aが蒸発lずに残ってしまう。
In commonly used electron guns for electron beam heating, the electron beam 5 is not oriented properly and the 5th
As shown in Figure (A), the evaporation material 1 in the evaporation material storage section 9
In contrast to 0, the electron beam is not applied from directly above. Therefore, as the evaporation progresses and the evaporation surface lowers, a shadow portion 10a is formed within the evaporation material storage portion 9 where the beam does not hit, as shown in FIG. 5(B). For even longer evaporation, as shown in FIG. 5(C), the electron beam 5
Even though the evaporated material reaches the bottom of the evaporation material storage section 9, the shadow portion 10a remains without being evaporated.

このような穴掘り現象の結果、蒸発材料収納部9内の蒸
発材料10が有効に寄与せず、さらに電子ビーム5のパ
ワーを一様に保っていても蒸着速度が蒸着の進行にとも
なって変化する等の問題がおった。
As a result of such a digging phenomenon, the evaporation material 10 in the evaporation material storage section 9 does not contribute effectively, and furthermore, even if the power of the electron beam 5 is kept constant, the evaporation rate changes as the evaporation progresses. There were some problems.

[発明の目的] 本発明は以上の事情に対処してなされたもので、蒸発材
料を均一に蒸発ざばて無駄なく蒸着に寄与ざU、かつ蒸
着速度の変動の少ない電子ビーム蒸着装置を提供するも
のである。
[Objective of the Invention] The present invention has been made in response to the above-mentioned circumstances, and provides an electron beam evaporation apparatus that evaporates evaporation material uniformly, contributes to evaporation without waste, and has less fluctuation in evaporation rate. It is something to do.

[発明の概要] 本発明は、内部が高真空に保持される真空槽と、円形の
開口をもつ蒸発材料収納部を有する前記真空槽内に設置
されたるつぼと、このるつぼの前記蒸発材料収納部に収
納された蒸発材料を電子ビーム加熱により蒸発させる前
記真空槽内に設置された電子ビーム発生部とを有する電
子ビーム蒸着装置において、前記るつぼの前記蒸発材料
収納部をそのほぼ中央に形成するとともに、このるつぼ
を蒸発材料の蒸発時に回転ざ往る回転機構を設けたこと
により、蒸発材料を均一に蒸発させて無駄なく蒸着に寄
与させ、かつ蒸着速度の変動を少なくしたものである。
[Summary of the Invention] The present invention provides a vacuum chamber whose interior is maintained at a high vacuum, a crucible installed in the vacuum chamber having an evaporation material storage section having a circular opening, and a crucible that stores the evaporation material in the crucible. In an electron beam evaporation apparatus having an electron beam generation section installed in the vacuum chamber, the evaporation material storage section of the crucible is formed approximately in the center of the crucible. In addition, by providing a rotation mechanism that rotates the crucible during evaporation of the evaporation material, the evaporation material is evaporated uniformly and contributes to the evaporation without waste, and fluctuations in the evaporation rate are reduced.

[発明の実施例コ 以下、本発明を図面を用いて詳細に説明する。[Embodiments of the invention] Hereinafter, the present invention will be explained in detail using the drawings.

第1図は本発明の一実施例を示す側面図である。FIG. 1 is a side view showing an embodiment of the present invention.

この電子ビーム蒸着装置は、図示されていない排気系に
より、内部が高真空に保たれた真空槽′11と、この真
空槽11の下部に設けられたるつぼ]2と、このるつぼ
12をその中心軸12aを軸として低速で回転させる回
転開溝13と、このるつぼ12の近傍に設けられた電子
ビーム14を発生させるフィラメント15aおよびこの
電子ビーム14をるつぼ12へと偏向させる偏向電極1
5bとよりなる電子銃15と、蒸着時間を調節するため
のシャッタ1Gとよりその要部が構成されている。
This electron beam evaporation apparatus consists of a vacuum chamber '11 whose interior is kept at a high vacuum by an exhaust system (not shown), a crucible 2 provided at the bottom of the vacuum chamber 11, and a crucible 12 placed at the center of the vacuum chamber '11. A rotary opening groove 13 that rotates at low speed around a shaft 12a, a filament 15a that is provided near the crucible 12 and that generates an electron beam 14, and a deflection electrode 1 that deflects the electron beam 14 toward the crucible 12.
The main parts thereof are constituted by an electron gun 15 consisting of an electron gun 5b and a shutter 1G for adjusting the deposition time.

またこのるつぼ12の蒸発材料収納部17には蒸発材料
18が収納され、また真空槽11の上部には基板19が
装着されており、この下面に蒸着膜19aが形成される
Further, an evaporation material 18 is stored in the evaporation material storage section 17 of the crucible 12, and a substrate 19 is attached to the upper part of the vacuum chamber 11, and a evaporation film 19a is formed on the lower surface of the substrate 19.

この電子ビーム蒸着装置において、第2図(A>に示す
ようにるつぼ12内の蒸発材料1Bに電子ビーム14を
照射し、電子ビーム14のパワーを蒸発温度以上に保ち
ながら、るつぼ12をその蒸発材料収納部17の中心!
tb12aを軸として自転させる。このとき電子ビーム
14を適当な走査範囲20で偏向走査さぼると蒸発材料
収納部17は全面を順次加熱されることになり、第2図
(B)に示すように均一に蒸発が進行する。
In this electron beam evaporation apparatus, an electron beam 14 is irradiated onto the evaporation material 1B in the crucible 12 as shown in FIG. The center of material storage section 17!
Rotate around tb12a as an axis. At this time, when the electron beam 14 is deflected and scanned within an appropriate scanning range 20, the entire surface of the evaporative material storage section 17 is heated successively, and evaporation progresses uniformly as shown in FIG. 2(B).

実験に用いた蒸発材料収納部17は内径36mm。The evaporation material storage section 17 used in the experiment had an inner diameter of 36 mm.

深ざ17耶の円筒状でおり、実験に際しては電子ビーム
を蒸発材料収納部17の開口部はぼ全面に偏光走査させ
加熱を行なった。このため、蒸発材料18はインゴット
状のものが適している。
It has a cylindrical shape with a depth of 17 mm, and during the experiment, the electron beam was polarized and scanned over almost the entire surface of the opening of the evaporative material storage section 17 to heat it. For this reason, an ingot-like material is suitable for the evaporation material 18.

ここでA、22(hを蒸発材料18として用い、電子ビ
ーム14を蒸発材料収納部17の開[]17aのほぼ仝
而に偏向走査さけて加熱を行い、るつぼ12を固定した
場合と一方向に間歇的に自転させた場合の蒸着の様子に
ついて説明する。
Here, A, 22 (h) is used as the evaporation material 18, the electron beam 14 is heated while avoiding the deflection scanning of the opening [] 17a of the evaporation material storage section 17, and the crucible 12 is fixed, and We will explain how the vapor deposition occurs when it is rotated intermittently.

このAC20:vインゴットはAβ203粉末を徐々に
溶かしこんで蒸発材料収納部17を満たすように形成さ
れ、真空槽11の真空度は約1×10’Torr、電子
ビーム′14の加速電圧は10kV、ビーム電流は30
0mAに保たれている。
This AC20:v ingot is formed by gradually melting Aβ203 powder to fill the evaporation material storage section 17, the vacuum degree of the vacuum chamber 11 is approximately 1 x 10' Torr, the acceleration voltage of the electron beam '14 is 10 kV, Beam current is 30
It is kept at 0mA.

まするつぼ12を固定した場合は、電子ビーム14がる
つぼの底に達して蒸着の継続が不可能となった時点での
基板上の膜厚は3μmである。
When the crucible 12 is fixed, the film thickness on the substrate is 3 μm when the electron beam 14 reaches the bottom of the crucible and it becomes impossible to continue vapor deposition.

これに対してるつぼ12を間歇的に自転させた場合は、
蒸発材料収納部17内の蒸発面が均一に下がり、5μm
以上の成膜が可能である。
On the other hand, if the crucible 12 is rotated intermittently,
The evaporation surface inside the evaporation material storage section 17 is uniformly lowered by 5 μm.
The above film formation is possible.

なおこの実施例では、るつぼ12の回転は間歇的な回転
としたが、これ以外にも例えば、るつぼ12を中心軸1
2aを軸として連続回転あるいは振動回転することによ
っても同様の効果が期待できる。
In this embodiment, the crucible 12 is rotated intermittently; however, for example, the crucible 12 may be
A similar effect can be expected by continuous rotation or vibrational rotation about 2a.

[発明の効果] 以上説明したように本発明によれば、るつぼをその蒸発
材料収納部の中心軸のまわりに回転できるようにしたの
で、電子ビームの複雑な走査を必要とせずに蒸発材料の
蒸発面を平面状に維持したまま均一に蒸発させることが
可能となり、蒸発材料収納部内の蒸発材料を有効に活用
できるとともに蒸着速度の変動が少なくなる。
[Effects of the Invention] As explained above, according to the present invention, since the crucible can be rotated around the central axis of the evaporation material storage section, the evaporation material can be evaporated without requiring complicated scanning of the electron beam. It becomes possible to evaporate uniformly while keeping the evaporation surface flat, and the evaporation material in the evaporation material storage section can be used effectively, and fluctuations in the evaporation rate are reduced.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の一実施例を示す構成図、第2図は同実
施例における蒸発の様子を説明する図、第3図は従来の
電子ビーム蒸着装置の構成図、第4図は従来の電子ビー
ム蒸着装置のるつぼの平面図、第5図は従来の電子ビー
ム蒸着装置における蒸発の状態を説明する図である。 11・・・・・・・・・真空槽 12・・・・・・・・・るつぼ 13・・・・・・・・・回転機構 14・・・・・・・・・電子ビーム 15・・・・・・・・・電子銃 17・・・・・・・・・蒸発材料収納部17a・・・・
・・円形開口 出願人     株式会社 東芝 株式会社 徳田製作所 代理人弁理士  須 山 佐 − 第3図 第4図 ”’−?−3 ′″−e′−3 第5図
Fig. 1 is a block diagram showing an embodiment of the present invention, Fig. 2 is a diagram explaining the state of evaporation in the same embodiment, Fig. 3 is a block diagram of a conventional electron beam evaporation apparatus, and Fig. 4 is a block diagram of a conventional electron beam evaporation apparatus. FIG. 5 is a plan view of the crucible of the electron beam evaporation apparatus of FIG. 11...... Vacuum chamber 12... Crucible 13... Rotating mechanism 14... Electron beam 15... ...... Electron gun 17 ... Evaporation material storage section 17a ...
...Circular opening Applicant Toshiba Corporation Tokuda Manufacturing Representative Patent Attorney Sa Suyama - Figure 3 Figure 4"'-?-3 '"-e'-3 Figure 5

Claims (1)

【特許請求の範囲】[Claims] (1)内部が高真空に保持される真空槽と、円形の開口
をもつ蒸発材料収納部を有する前記真空槽内に設置され
たるつぼと、このるつぼの前記蒸発材料収納部に収納さ
れた蒸発材料を電子ビーム加熱により蒸発させる前記真
空槽内に設置された電子ビーム発生部とを有する電子ビ
ーム蒸着装置において、前記るつぼの前記蒸発材料収納
部をそのほぼ中央に形成するとともに、このるつぼを蒸
発材料の蒸発時に回転させる回転機構を設けたことを特
徴とする電子ビーム蒸着装置。
(1) A vacuum chamber whose interior is maintained at a high vacuum, a crucible installed in the vacuum chamber having an evaporation material storage section with a circular opening, and an evaporation chamber stored in the evaporation material storage section of this crucible. In an electron beam evaporation apparatus having an electron beam generation section installed in the vacuum chamber for evaporating a material by electron beam heating, the evaporation material storage section of the crucible is formed approximately in the center thereof, and the crucible is An electron beam evaporation apparatus characterized by being provided with a rotation mechanism that rotates during evaporation of a material.
JP20317985A 1985-09-12 1985-09-12 Vapor depositing apparatus using electron beam Pending JPS6263669A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20317985A JPS6263669A (en) 1985-09-12 1985-09-12 Vapor depositing apparatus using electron beam

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20317985A JPS6263669A (en) 1985-09-12 1985-09-12 Vapor depositing apparatus using electron beam

Publications (1)

Publication Number Publication Date
JPS6263669A true JPS6263669A (en) 1987-03-20

Family

ID=16469765

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20317985A Pending JPS6263669A (en) 1985-09-12 1985-09-12 Vapor depositing apparatus using electron beam

Country Status (1)

Country Link
JP (1) JPS6263669A (en)

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