JPS6263061A - Heating method for wafer applied plate - Google Patents
Heating method for wafer applied plateInfo
- Publication number
- JPS6263061A JPS6263061A JP60200088A JP20008885A JPS6263061A JP S6263061 A JPS6263061 A JP S6263061A JP 60200088 A JP60200088 A JP 60200088A JP 20008885 A JP20008885 A JP 20008885A JP S6263061 A JPS6263061 A JP S6263061A
- Authority
- JP
- Japan
- Prior art keywords
- plate
- heated
- temperature
- heater
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Jigs For Machine Tools (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、鏡面加工されるシリコンウェハ等の半導体ウ
ェハを貼付けるウェハ貼付プレートの加熱方法に関する
ものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method of heating a wafer attachment plate on which a semiconductor wafer such as a silicon wafer to be mirror-finished is attached.
シリコンウェハ等の半導体ウェハ（以下、単にウェハと
いう）の最終加工工程である研磨工程では、ウェハの片
面の鏡面仕上げが行われている。BACKGROUND ART In a polishing step, which is the final processing step for semiconductor wafers such as silicon wafers (hereinafter simply referred to as wafers), one side of the wafer is mirror-finished.
この加工に際して、ウェハは、アルミナセラミックスか
らなる円板状のウェハ貼付プレート上にワックスを介し
て貼付けられる。During this processing, the wafer is attached via wax to a disc-shaped wafer attachment plate made of alumina ceramics.
従来、アルミナセラミックスからなるウェハ貼付プレー
トにウェハを貼付ける場合、このプレートをアルミニウ
ム製鋳造ヒータ上に載置して加熱すると、セラミックス
のスポーリング性のために加熱冷却時の温度勾配または
プレート内での温度勾配によりアルミナセラミックスか
らなるプレートが割れて破損する欠点がある。Conventionally, when attaching a wafer to a wafer attaching plate made of alumina ceramics, when this plate is placed on an aluminum casting heater and heated, there is a temperature gradient during heating and cooling or within the plate due to the spalling property of ceramics. The disadvantage is that the plate made of alumina ceramics cracks and breaks due to the temperature gradient.
本発明は上述する問題点に着目し、アルミナセラミック
スからなるプレートをアルミニウム製錆込ヒータ上で加
熱しても温度勾配による破損を生ずることのない優れた
ウェハ貼付プレートの加熱方法を提供することを目的と
する。The present invention has focused on the above-mentioned problems, and an object of the present invention is to provide an excellent method for heating a wafer attachment plate that does not cause damage due to temperature gradients even when a plate made of alumina ceramics is heated on an aluminum heater. purpose.
本発明は前記目的を達成すべく幾多の研究の結果、アル
ミナセラミックスからなるウェハ貼付プレートを遠赤外
線ヒータによって非接触で均一に加熱することによりプ
レートを破損することなく加熱する方法を開発し、本発
明に到達したものである。To achieve the above object, as a result of numerous studies, the present invention has developed a method of uniformly heating a wafer-attached plate made of alumina ceramics without contact with a far-infrared heater, without damaging the plate. This invention has been achieved.
本発明の方法はアルミナセラミックスからなるウェハ貼
付プレートを断熱材で包囲した雰囲気中で遠赤外線ヒー
タによって上記プレートの上下両側面から遠赤外線を非
接触で均一に照射して予備加熱し、この予備加熱したプ
レートを鋳造ヒータ上に載置して所定温度まで昇音する
ことを特徴する。In the method of the present invention, a wafer attachment plate made of alumina ceramics is preheated by uniformly irradiating far infrared rays from both upper and lower sides of the plate with a far infrared heater in an atmosphere surrounded by a heat insulating material without contact. The plate is placed on a casting heater and raised to a predetermined temperature.
本発明の方法において、アルミナセラミックスからなる
ウェハ貼付プレート（以下、単にプレートという）の加
熱は断熱材で包囲した加熱昇温雰囲気中で行う、８囲気
としては１例えば空気を用い、この雰囲気中でプレート
を遠赤外線ヒータ（例えばジャード社製）を用いて、例
えば２００〜３００℃の範囲、好ましくは約２５０”Ｃ
の温度で約１〜３分にわたって加熱する。この加熱ヒー
タはプレートから約２〜１０ａ１、好ましくは約５３離
した位置から加熱する。この加熱手段の好適例を第１図
に示している。第１図に示すようにプレート１をプレー
ト保持体２上に配置し、断熱材からなる包囲体３および
３′の内面に設けたパネル式の遠赤外線ヒータ４および
４′によりプレート１の上下両面から予備加熱する。In the method of the present invention, the wafer attachment plate (hereinafter simply referred to as the plate) made of alumina ceramics is heated in a heated atmosphere surrounded by a heat insulating material, and air is used as the surrounding atmosphere. The plate is heated to a temperature of, for example, 200 to 300°C, preferably about 250"C using a far infrared heater (manufactured by Jard).
Heat for about 1 to 3 minutes at a temperature of . The heater heats the plate from a distance of about 2 to 10 a1, preferably about 53, from the plate. A preferred example of this heating means is shown in FIG. As shown in FIG. 1, the plate 1 is placed on a plate holder 2, and panel-type far-infrared heaters 4 and 4' provided on the inner surfaces of the enclosures 3 and 3' made of heat insulating material are used to heat the upper and lower surfaces of the plate 1. Preheat from.
示せず）上に載置して所定温度、例えば１２０〜２００
℃の範囲、好ましくは約１８０℃の温度まで昇温するよ
うに加熱する。(not shown) and heated to a predetermined temperature, e.g. 120 to 200
℃ range, preferably to a temperature of about 180°C.
上述するように、本発明はアルミナセラミックスからな
るプレートを遠赤外線の均一照射により予備加熱し、こ
のプレートをアルミニウム鋳造ヒータ上で所定温度まで
加熱することによって、プレート内での急激な温度勾配
の発生をなくし、均一にかつ短時間でプレートを一定温
度に保持することができ、従来における加熱中のプレー
ト破損の発生を防止することができた。As described above, the present invention preheats a plate made of alumina ceramics by uniformly irradiating it with far infrared rays, and then heats this plate to a predetermined temperature on an aluminum casting heater, thereby creating a rapid temperature gradient within the plate. This makes it possible to maintain the plate at a constant temperature uniformly and in a short period of time, and prevents the plate from breaking during heating, which was the case in the past.
アルミナセラミックスからなるプレート１を第１図に示
す予備加熱装置のプレート保持体２上に載置し、プレー
トから上下に５Ｉｌｌ！ＩＩ＃ｉシて位置するパネル式
の遠赤外線ヒータ（ジャード社製；パワー上下各２，６
７Ｋｗ ［フルパワ一時］）から遠赤外線をプレートの
上下両側面に９０秒間にわたり照射し、約１２０℃まで
予備加熱した。A plate 1 made of alumina ceramics is placed on the plate holder 2 of the preheating device shown in FIG. Panel-type far-infrared heater (manufactured by Jard; power: 2, 6 each for upper and lower
The plate was preheated to about 120° C. by irradiating both upper and lower sides of the plate with far infrared rays for 90 seconds from a power source of 7 Kw (full power, temp.).
かように遠赤外線で予め加熱したプレートをアルミニウ
ム鋳造ヒータ（図示せず）上に載置して１９０±２℃の
温度（プレート表面において１８０℃）に加熱した。The plate previously heated with far infrared rays was placed on an aluminum casting heater (not shown) and heated to a temperature of 190±2°C (180°C on the plate surface).
上述するように本発明の方法によりプレートを加熱処理
することによって、従来技術におけるプレート内の温度
勾配によるプレート割れの生じないことを確めた。It has been confirmed that by heat-treating the plate according to the method of the present invention as described above, plate cracking due to the temperature gradient within the plate does not occur as in the prior art.
第１図は本発明の方法においてプレートを遠赤外線加熱
する装置の好適な構造を示す説明用線図。
第２図は本発明の方法においてプレートを遠赤外線加熱
するプレートの昇温状態を示す曲線図である。
１・・・ウェハ貼付プレート
２・・・プレート保持体
３．３′・・・断熱包囲体
４．４′・・・遠赤外線ヒータFIG. 1 is an explanatory diagram showing a preferred structure of an apparatus for heating a plate by far infrared rays in the method of the present invention. FIG. 2 is a curve diagram showing the heating state of the plate when the plate is heated by far infrared rays in the method of the present invention. 1... Wafer attachment plate 2... Plate holder 3.3'... Heat insulating enclosure 4.4'... Far infrared heater
Claims (1)
熱材で包囲した雰囲気中で遠赤外線ヒータによって上記
プレートの上下両側面から遠赤外線を非接触で均一に照
射して予備加熱し、この予備加熱したプレートを鋳造ヒ
ータ上に載置して所定温度まで昇温することを特徴とす
るウェハ貼付プレートの加熱方法。A wafer attachment plate made of alumina ceramics is preheated by uniformly irradiating far infrared rays from both upper and lower sides of the plate using a far infrared heater in an atmosphere surrounded by a heat insulating material, and the preheated plate is then heated by a casting heater. A method for heating a wafer attachment plate, which comprises placing the plate on top of the plate and raising the temperature to a predetermined temperature.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60200088A JPH0712591B2 (en) | 1985-09-10 | 1985-09-10 | Wafer attachment plate heating method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60200088A JPH0712591B2 (en) | 1985-09-10 | 1985-09-10 | Wafer attachment plate heating method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6263061A true JPS6263061A (en) | 1987-03-19 |
| JPH0712591B2 JPH0712591B2 (en) | 1995-02-15 |
Family
ID=16418653
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60200088A Expired - Lifetime JPH0712591B2 (en) | 1985-09-10 | 1985-09-10 | Wafer attachment plate heating method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0712591B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014153490A (en) * | 2013-02-07 | 2014-08-25 | Hoya Corp | Spectacle lens dye vapor deposition device and spectacle lens dye vapor deposition method |
-
1985
- 1985-09-10 JP JP60200088A patent/JPH0712591B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014153490A (en) * | 2013-02-07 | 2014-08-25 | Hoya Corp | Spectacle lens dye vapor deposition device and spectacle lens dye vapor deposition method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0712591B2 (en) | 1995-02-15 |
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