JPS6261328A - Charged beam exposure device - Google Patents
Charged beam exposure deviceInfo
- Publication number
- JPS6261328A JPS6261328A JP20043785A JP20043785A JPS6261328A JP S6261328 A JPS6261328 A JP S6261328A JP 20043785 A JP20043785 A JP 20043785A JP 20043785 A JP20043785 A JP 20043785A JP S6261328 A JPS6261328 A JP S6261328A
- Authority
- JP
- Japan
- Prior art keywords
- beams
- beam exposure
- charged beam
- deflection
- deflector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electron Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
本発明は、荷電ビーム露光において、荷電ビームを偏向
し、パターン描画を行う装置に係わり、特に、多数の荷
電ビームによって露光を行う装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to an apparatus that deflects a charged beam and draws a pattern in charged beam exposure, and particularly relates to an apparatus that performs exposure using a large number of charged beams.
現在のところ、荷電ビーム露光装置はシングルビーム方
式が主流となっているが、欠点の一つとしてスループッ
トの悪さが挙げられ、その解決策として、同時に複数個
所を露光することができるマルチビーム方式が提案され
ている。マルチビーム方式の描画速度は、同様のブラン
キング周波数を持つ、従来のラスタースキャン、ガウシ
アンシングルビーム方式に比べ、小ビームの個数倍速く
なり、同様の可変成形ビーム、ペクタスキャン方式に比
べても、小ビームの個数を多くすることにより、描画速
度を速くすることが可能である。Currently, single-beam systems are the mainstream for charged beam exposure equipment, but one of the drawbacks is poor throughput, and as a solution to this, a multi-beam system that can expose multiple areas at the same time is proposed. Proposed. The writing speed of the multi-beam method is twice as fast as the number of small beams compared to the conventional raster scan and Gaussian single beam methods with similar blanking frequencies, and it is faster than the similar variable shaped beam and pectascan methods. By increasing the number of beams, it is possible to increase the drawing speed.
マルチビーム露光装置の一つの構成を第2図に示す。こ
の構成のマルチビーム露光装置では、単電子銃20によ
り発生された荷電ビームを分割して小ビーム群を得て、
これらの小ビーム個々に対して設けたブランキング電極
3と、小ビーム群を−括して走査させる偏向器8によっ
て第3図に示すように各ビームに別々のパターンを描画
させる。FIG. 2 shows one configuration of a multi-beam exposure apparatus. In the multi-beam exposure apparatus having this configuration, a charged beam generated by the single electron gun 20 is divided to obtain a group of small beams.
A blanking electrode 3 provided for each of these small beams and a deflector 8 that collectively scans the group of small beams cause each beam to draw a separate pattern as shown in FIG.
ここで第3図の斜線部はブランキングしない領域、丸は
小ビームスポットを示している。Here, the shaded area in FIG. 3 indicates a non-blanking area, and the circle indicates a small beam spot.
しかしながら、上記の偏向器を対物レンズの特性に起因
し、上記の偏向器による補正が不可能な各ビーム特有の
性質の偏向歪、偏向位置のズレが生じてくる。However, due to the characteristics of the objective lens of the above-mentioned deflector, deflection distortion and deflection position deviation occur that are unique to each beam and cannot be corrected by the above-mentioned deflector.
これらの誤差量は、今までは、装置の1度に比べ充分微
小なものであったが、精度向上を計るにあたり、これら
は無視できなくなってきた。Until now, these error amounts were sufficiently small compared to 1 degree of the device, but they can no longer be ignored when trying to improve accuracy.
本発明の目的は、1ルチビーム露光装置において、これ
膚で補正不可能であった、各ビームに特有な性質の誤差
量の補正を可能とする荷電ビーム露光装置を提供するこ
とにある。SUMMARY OF THE INVENTION An object of the present invention is to provide a charged beam exposure apparatus that makes it possible to correct errors that are unique to each beam and which cannot be corrected by a single multi-beam exposure apparatus.
上述の目的を達成するために、本発明では、第1図に示
すように、ブランキング電極の近辺に小ビームを個々に
微小量だけ偏向する微小偏向器を設け、各小ビームを別
々に補正することを可能とし、あらかじめ求めた各ビー
ム補正係数を用いて、ビーム走査に同期して各ビームの
補正量を求め、微小偏向器にその補正量を与える。In order to achieve the above object, in the present invention, as shown in FIG. 1, a micro-deflector is provided near the blanking electrode to deflect each small beam by a minute amount, and each small beam is corrected separately. Using each beam correction coefficient determined in advance, the amount of correction for each beam is determined in synchronization with beam scanning, and the amount of correction is provided to the micro deflector.
本発明により、マルチビーム露光装置において、各ビー
ムに特有な性質の誤差量の補正が可能となり、より高精
度な描画パターンを得ることができる。According to the present invention, in a multi-beam exposure apparatus, it is possible to correct the amount of error peculiar to each beam, and it is possible to obtain a more accurate drawing pattern.
第2図は本発明の一実施例を示す構成図である。 FIG. 2 is a configuration diagram showing an embodiment of the present invention.
20は荷電ビームとして電子ビームを放出する電子銃、
1はビーム分割ガーゼレンズ、2は収束ガーゼレンズ、
3はブランキング電極、4は本発明の特徴である微小偏
向器、5は収束ガーゼレンズ、6は縮小レンズ、7は対
物レンズ、8は偏向器、9は試料、10はテーブル駆動
系、11はブランキング制御回路、12は補正演算回路
、13は偏向制御回路、14はテーブル位置測長器、1
5はテーブル制御系、16は計算機である。この装置は
、3個のガーゼレンズ1.2.5により、ビームを分割
、収束させる。2枚目のガーゼレンズ2内部の各小ビー
ムにブランキング電極3と全小ビームに共通な偏向器8
によって、第3図に示すように各ビームに別々のパター
ンを同時に描かせる。20 is an electron gun that emits an electron beam as a charged beam;
1 is a beam splitting gauze lens, 2 is a converging gauze lens,
3 is a blanking electrode, 4 is a micro deflector which is a feature of the present invention, 5 is a converging gauze lens, 6 is a reduction lens, 7 is an objective lens, 8 is a deflector, 9 is a sample, 10 is a table drive system, 11 1 is a blanking control circuit, 12 is a correction calculation circuit, 13 is a deflection control circuit, 14 is a table position length measuring device, 1
5 is a table control system, and 16 is a computer. This device splits and focuses the beam using three gauze lenses 1.2.5. A blanking electrode 3 for each small beam inside the second gauze lens 2 and a deflector 8 common to all small beams.
This causes each beam to draw separate patterns simultaneously, as shown in FIG.
このような方式のマルチビーム4光装置では、一つの電
子光学系で、各小ビームに異なるパターンを同時に描画
させることが可能となり、ラスタースキャンでありその
描画時間は描画するパターンの複雑には関与しない。In this type of multi-beam 4-light device, it is possible to draw different patterns simultaneously on each small beam using one electron optical system, and since it is a raster scan, the drawing time does not depend on the complexity of the pattern to be drawn. do not.
このような方式の実在のマルチビーム露光装置では、第
4図及び第5図に示すように試料面上での各ビーム間の
相対位置、各ビームの偏向領域3゜の歪が生じてくるた
め、描画パターンの歪、パターンの切断などが起きてく
る。In an actual multi-beam exposure apparatus using this type of system, as shown in Figures 4 and 5, distortion occurs in the relative position of each beam on the sample surface and in the deflection area of each beam by 3 degrees. , distortion of the drawn pattern, cutting of the pattern, etc. occur.
このような誤差は、各ビームに対して特有のものであり
、各ビームに対して特有の補正量を加え 4なくてはな
らないので、偏向データに対する補正は不可能であり、
ブランキングデータに対する補正では、多少効果はある
ものの、となりあうど、−ムのブランキングデータの入
れ換えなど犬がかりとなるし、となりあうビームの偏向
領域の境界線が分離している場合、補正は不可能である
など完全ではない。Such errors are unique to each beam and require a unique amount of correction to be applied to each beam, making it impossible to correct the deflection data.
Although the correction for blanking data is somewhat effective, it is difficult to replace the blanking data of adjacent beams, and if the boundaries of the deflection areas of adjacent beams are separated, the correction is not effective. Impossible is not perfect.
このため本発明では、第1図に示すように、ブランキン
グ電極の近辺に微小偏向器を設け、あらかじめ求められ
た各ビーム補正量を算出するだめの係数と、偏向位置に
よって、ビーム走査と同期して各ビーム補正量を算出し
、微小偏向器によって補正を行う。For this reason, in the present invention, as shown in Fig. 1, a minute deflector is provided near the blanking electrode, and beam scanning is synchronized by using coefficients for calculating each beam correction amount determined in advance and the deflection position. Then, each beam correction amount is calculated, and the correction is performed using a micro deflector.
この方法により、ブランキングデータを変えることなし
に、歪、切断個所のない高精度なパターンを形成するこ
とが出来た。With this method, it was possible to form a highly accurate pattern without distortion or cut points without changing the blanking data.
上記微小偏向器4は、上述した用途の他に、ガーゼレン
ズ間のアライメントにも有効であることは言うまでもな
い。Needless to say, the micro deflector 4 is effective for alignment between gauze lenses in addition to the above-mentioned applications.
第1図は本発明の一実施例を示す構成図、第2図は従来
装置を示す構成図、第3図は通常の描〔面方法を示す説
明図、第4図はビーム位置の相対的誤差を示す説明図、
第5図は小ビームの偏向領域の歪状態を示す説明図であ
る。
20・・電子銃、 4・・・微小偏向器、 9・・
・試料。
代理人 弁理士 則 近 恵 佑
同 竹 花 喜久男
第 3 図Fig. 1 is a block diagram showing an embodiment of the present invention, Fig. 2 is a block diagram showing a conventional device, Fig. 3 is an explanatory diagram showing a normal drawing method, and Fig. 4 is a relative diagram of the beam position. An explanatory diagram showing the error,
FIG. 5 is an explanatory diagram showing the distortion state of the deflection area of the small beam. 20...Electron gun, 4...Minute deflector, 9...
·sample. Agent Patent Attorney Nori Chika Yudo Kikuo Takehana Figure 3
Claims (2)
にブランキングする手段と、該ビームを試料面上に収束
させる手段と、該ビームを一括して偏向する偏向手段と
を有し、前記試料面上に荷電ビームを照射させ、所望パ
ターンを描画する荷電ビーム露光装置において、前記ブ
ランキング手段の近辺に、該ビームを個々に微小量だけ
偏向させる微小偏向手段を有することを特徴とする荷電
ビーム露光装置。(1) having means for obtaining a large number of charged beams, means for blanking the beams individually, means for converging the beams on the sample surface, and deflection means for deflecting the beams all at once; The charged beam exposure apparatus that irradiates the sample surface with a charged beam to draw a desired pattern is characterized in that the charged beam exposure apparatus includes a minute deflection means that individually deflects the beam by a minute amount in the vicinity of the blanking means. Charged beam exposure equipment.
な偏向歪、偏向位置の補正量を与えることを特徴とする
特許請求の範囲第1項記載の荷電ビーム露光装置。(2) The charged beam exposure apparatus according to claim 1, wherein the micro deflection means is provided with a correction amount for deflection distortion and deflection position specific to each of the beams.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20043785A JPS6261328A (en) | 1985-09-12 | 1985-09-12 | Charged beam exposure device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20043785A JPS6261328A (en) | 1985-09-12 | 1985-09-12 | Charged beam exposure device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6261328A true JPS6261328A (en) | 1987-03-18 |
Family
ID=16424275
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP20043785A Pending JPS6261328A (en) | 1985-09-12 | 1985-09-12 | Charged beam exposure device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6261328A (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08264411A (en) * | 1995-03-20 | 1996-10-11 | Toshiba Corp | Electron beam exposure apparatus and proximity effect correcting method in electron beam exposure |
JP2003109900A (en) * | 2002-09-02 | 2003-04-11 | Toshiba Corp | Near field effect correction method in electron beam exposure |
JP2004303794A (en) * | 2003-03-28 | 2004-10-28 | Canon Inc | Aligner |
JP2006505124A (en) * | 2002-10-30 | 2006-02-09 | マッパー・リソグラフィー・アイピー・ビー.ブイ. | Electron beam exposure system |
JP2007146951A (en) * | 2005-11-25 | 2007-06-14 | Showa Corp | Front fork |
JP2011255399A (en) * | 2010-06-09 | 2011-12-22 | Shiba Kanagata:Kk | Working appliance for forming through hole or bulged part in peripheral wall of cylindrical workpiece |
US10389453B2 (en) | 2009-12-15 | 2019-08-20 | Interdigital Madison Patent Holdings | Multiplexed RFAGC for frequency diversity receivers |
-
1985
- 1985-09-12 JP JP20043785A patent/JPS6261328A/en active Pending
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08264411A (en) * | 1995-03-20 | 1996-10-11 | Toshiba Corp | Electron beam exposure apparatus and proximity effect correcting method in electron beam exposure |
JP2003109900A (en) * | 2002-09-02 | 2003-04-11 | Toshiba Corp | Near field effect correction method in electron beam exposure |
JP2006505124A (en) * | 2002-10-30 | 2006-02-09 | マッパー・リソグラフィー・アイピー・ビー.ブイ. | Electron beam exposure system |
JP2010171452A (en) * | 2002-10-30 | 2010-08-05 | Mapper Lithography Ip Bv | Electron beam exposure system |
JP2004303794A (en) * | 2003-03-28 | 2004-10-28 | Canon Inc | Aligner |
JP2007146951A (en) * | 2005-11-25 | 2007-06-14 | Showa Corp | Front fork |
US10389453B2 (en) | 2009-12-15 | 2019-08-20 | Interdigital Madison Patent Holdings | Multiplexed RFAGC for frequency diversity receivers |
JP2011255399A (en) * | 2010-06-09 | 2011-12-22 | Shiba Kanagata:Kk | Working appliance for forming through hole or bulged part in peripheral wall of cylindrical workpiece |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP3206143B2 (en) | Charged particle beam exposure method | |
EP0210631A2 (en) | Method and apparatus for charged particle beam exposure | |
US4914304A (en) | Charged-beam exposure system | |
DE3583087D1 (en) | Laserstrahl-lithograph. | |
US3753034A (en) | Electron beam apparatus | |
JPS6261328A (en) | Charged beam exposure device | |
JP4167904B2 (en) | Electron beam drawing apparatus and electron beam drawing method | |
US5030836A (en) | Method and apparatus for drawing patterns using an energy beam | |
JPH06275500A (en) | Electron beam lithography device | |
CN110076451A (en) | Laser processing device and laser focal compensation method | |
US4363953A (en) | Electron beam scribing method | |
JP3027072B2 (en) | Ion beam processing method | |
US5432314A (en) | Transparent mask plate for charged particle beam exposure apparatus and charged particle beam exposure process using the transparent mask plate | |
US4737646A (en) | Method of using an electron beam | |
JP2002246303A (en) | Method of adjusting focal point and electron beam lithography system | |
JPH06104163A (en) | Focus correction method of electron beam drawing device | |
JPS6229136A (en) | Mark detection in charged particle beam exposure and device thereof | |
JPH1154403A (en) | Charged electron-beam plotting method | |
JPH0350715A (en) | Pattern aligner | |
JPH11144668A (en) | Focused ion beam machining device | |
JPS6232613B2 (en) | ||
JPS60121423A (en) | Laser beam deflecting device | |
JP2583919B2 (en) | Optical scanning device | |
JPS6244406B2 (en) | ||
JPH09298157A (en) | Charged particle beam processing method and device |