JPS6259879B2 - - Google Patents

Info

Publication number
JPS6259879B2
JPS6259879B2 JP56051243A JP5124381A JPS6259879B2 JP S6259879 B2 JPS6259879 B2 JP S6259879B2 JP 56051243 A JP56051243 A JP 56051243A JP 5124381 A JP5124381 A JP 5124381A JP S6259879 B2 JPS6259879 B2 JP S6259879B2
Authority
JP
Japan
Prior art keywords
film
layer
dielectric constant
resin
ito
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56051243A
Other languages
Japanese (ja)
Other versions
JPS57165997A (en
Inventor
Masuhiro Shoji
Teruo Sakagami
Naohiro Murayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kureha Corp
Original Assignee
Kureha Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kureha Corp filed Critical Kureha Corp
Priority to JP56051243A priority Critical patent/JPS57165997A/en
Priority to US06/366,031 priority patent/US4413090A/en
Priority to DE8282102946T priority patent/DE3265547D1/en
Priority to EP19820102946 priority patent/EP0062351B1/en
Publication of JPS57165997A publication Critical patent/JPS57165997A/en
Publication of JPS6259879B2 publication Critical patent/JPS6259879B2/ja
Granted legal-status Critical Current

Links

Description

【発明の詳細な説明】 本発明は分散型交流電界発光素子に関する。更
に詳細に述べると、分散型交流電界発光素子の高
誘電性樹脂成分、例えば発光体のマトリツクス樹
脂成分としてエチレン―ビニルアルコール共重合
体のシアノエチル化物を用いる分散型交流電界発
光素子(以下分散型EL素子と記す)に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a distributed AC electroluminescent device. More specifically, a dispersed AC electroluminescent device (hereinafter referred to as a dispersed EL (hereinafter referred to as "element").

誘電率の高いマトリツクス樹脂中に蛍光体を分
散させた発光体層に電界を印加して発光させる分
散型EL素子は発光体層がフイルム状に形成され
薄層化が容易である上に、フレキシブルであり、
更に面積を自由に選べる利点を有している。この
利点を生かしてデイスプレイの実用化が試みられ
ている。ここで蛍光体の分散媒となるマトリツク
ス樹脂はその誘電率が高い程輝度は高く有利であ
るが、単に誘電率が高いだけでは不十分である輝
度を高めるためには、透明であり、しかも耐電圧
を有するものでなくてはならない。更に分散型
EL素子の特徴であるフレキシビリテイーを損う
ものであつてはならない。
Dispersed EL elements emit light by applying an electric field to a light-emitting layer in which phosphors are dispersed in a matrix resin with a high dielectric constant.The light-emitting layer is formed in a film shape, making it easy to thin the layer and making it flexible. and
Furthermore, it has the advantage that the area can be freely selected. Attempts are being made to utilize this advantage to put displays into practical use. The higher the dielectric constant of the matrix resin used as the dispersion medium for the phosphor, the higher the brightness, which is advantageous, but simply having a high dielectric constant is not enough.In order to increase the brightness, it must be transparent and durable. It must have voltage. Even more decentralized
It must not impair the flexibility, which is a characteristic of EL devices.

このようなマトリツクス樹脂としては、従来エ
ポキシ樹脂やシアノエチルセルロースなどが提案
されている。しかし前者は誘電率が低くあまり好
ましくない。シアノエチルセルロースはそのシア
ノ化の程度にもよるが、80%以上シアノエチル化
されたものは誘電率が15以上と極めて高い誘電率
を示すので、誘電率の点からは極めて有利である
ので最も多く使用されている。
Epoxy resins, cyanoethyl cellulose, and the like have been proposed as such matrix resins. However, the former is not very preferable due to its low dielectric constant. Cyanoethyl cellulose depends on the degree of cyanation, but those with 80% or more cyanation have an extremely high dielectric constant of 15 or more, so they are extremely advantageous in terms of dielectric constant and are the most commonly used. has been done.

しかしEL素子とする場合は蛍光体をマトリツ
クス樹脂中に分散して製膜した発光体層に電圧を
印加するための電極が必要であり、また発光層の
光を外部に放出するため片面(表面側)の電極は
例えばITOまたは酸化錫などの透明電極が用いら
れるが、この電極と発光体層との緊密な接着も必
要である。また、発光層の裏面は直接電極と接す
る場合もあるが、蛍光体をマトリツクス樹脂に分
散させた発光層は不均質で、均一な電圧印加が行
なわれ難いので、必要に応じ同一または別のマト
リツクス樹脂中に酸化チタン粉末などの白色粉末
を分散させた耐電圧反射層が設けられる。この裏
面層との密着も必要である。耐電圧反射層を設け
る場合は適宜発光層と接着性のよい樹脂をマトリ
ツクス樹脂とした耐電圧反射層を用いることもで
きるので、接着性はあまり大きな問題となつてい
ない。しかし発光体層の接着性が良ければ、耐電
圧反射層に代えて透明な高誘電率の誘電体フイル
ムと接着し、そのフイルム裏面にニツケル、アル
ミニウムなどの反射性の金属を蒸着して鏡面を形
成させておけば、誘電体フイルムが耐電圧層とな
り、蒸着金属の鏡面が反射面となるので一層有利
である。しかし前記のシアノエチルセルロースは
ITO、酸化錫などの透明電極や高分子物質などと
の接着性に乏しく、シアノエチルセルロースをマ
トリツクス樹脂とする発光層は透明電極層との間
に空隙を生じ易く、発光層に充分且つ均一な電界
を印加することができない場合が屡々ある。
However, when making an EL device, an electrode is required to apply a voltage to the luminescent layer, which is formed by dispersing phosphor in a matrix resin. For example, a transparent electrode such as ITO or tin oxide is used as the electrode on the side), but it is also necessary to tightly adhere this electrode to the luminescent layer. In addition, although the back side of the light emitting layer may be in direct contact with the electrode, the light emitting layer in which phosphors are dispersed in a matrix resin is non-uniform and it is difficult to apply a uniform voltage. A voltage-resistant reflective layer is provided in which a white powder such as titanium oxide powder is dispersed in a resin. Close contact with this back layer is also required. When providing a voltage-resistant reflective layer, it is possible to use a voltage-resistant reflective layer whose matrix resin is a resin that has good adhesion to the light-emitting layer, so that adhesion is not a big problem. However, if the luminous layer has good adhesion, a transparent high dielectric constant dielectric film can be used instead of the voltage-resistant reflective layer, and a reflective metal such as nickel or aluminum can be deposited on the back of the film to create a mirror surface. This is even more advantageous since the dielectric film becomes a withstand voltage layer and the mirror surface of the vapor-deposited metal becomes a reflective surface. However, the cyanoethylcellulose mentioned above
It has poor adhesion with transparent electrodes such as ITO and tin oxide, as well as polymeric substances, and a light-emitting layer using cyanoethyl cellulose as a matrix resin tends to form gaps between the light-emitting layer and the transparent electrode layer. There are many cases where it is not possible to apply

本発明は誘電率の点からも、また透明電極との
接着性の点からも極めて優れた、シアノエチル化
エチレンビニルアルコール共重合体を高誘電性樹
脂成分、例えば発光体層のマトリツクス樹脂成分
として用いたEL素子を提供するものである。以
下、本発明を詳細に説明する。
The present invention uses a cyanoethylated ethylene vinyl alcohol copolymer, which has excellent dielectric constant and adhesive properties with transparent electrodes, as a highly dielectric resin component, for example, as a matrix resin component of a luminescent layer. The present invention provides an EL device with a high quality. The present invention will be explained in detail below.

シアノエチル化に用いられるエチレン―ビニル
アルコール共重合体は、通常エチレン―酢酸ビニ
ル共重合体をケン化して得られるものであるが、
ケン化度は任意に選ぶことができる。しかしアル
コール基がシアノエチル化されて高い誘電率が得
られることより、ケン化度は高いほうが好まし
く、一般には50%以上更に好ましくは80%以上ケ
ン化された共重合体である。またこのエチレン―
ビニルアルコール共重合体のシアノエチル化の程
度は、必ずしもビニルアルコール結合基のOH基
の全部がシアノエチル化されていることを要しな
いが、EL素子用として必要な高い誘電率を保持
させるためにはOH基の40%以上がシアノエチル
化されていることが好ましい。更に好ましくは50
%以上である。また更にエチレン基はシアノエチ
ル化エチレン―ビニルアルコール共重合体に柔軟
性および接着性さらには熱安定性を付与するため
に必要で共重合体構成基の10モル%以上70モル%
以下が望ましい。10モル%以下ではシアノエチル
化エチレン―ビニルアルコール共重合体の電極と
の接着性ならびに、熱安定性に乏しく、また70%
を超えるとシアノエチル基の含量が少なく誘電率
が低くなるので好ましくない。
The ethylene-vinyl alcohol copolymer used for cyanoethylation is usually obtained by saponifying ethylene-vinyl acetate copolymer.
The degree of saponification can be selected arbitrarily. However, since the alcohol group is cyanoethylated and a high dielectric constant is obtained, it is preferable that the degree of saponification is high, and the copolymer is generally saponified by 50% or more, more preferably 80% or more. Also, this ethylene
Regarding the degree of cyanoethylation of the vinyl alcohol copolymer, it is not necessary that all of the OH groups in the vinyl alcohol bonding groups are cyanoethylated, but in order to maintain the high dielectric constant required for EL devices, the OH Preferably, 40% or more of the groups are cyanoethylated. More preferably 50
% or more. Furthermore, the ethylene group is necessary to impart flexibility, adhesiveness, and thermal stability to the cyanoethylated ethylene-vinyl alcohol copolymer, and is 10 mol% or more and 70 mol% of the copolymer constituent groups.
The following are desirable. If it is less than 10 mol%, the cyanoethylated ethylene-vinyl alcohol copolymer will have poor adhesion to the electrode and poor thermal stability;
Exceeding this is not preferable because the content of cyanoethyl groups will be small and the dielectric constant will be low.

本発明に使用するシアノエチル化エチレン―ビ
ニルアルコール共重合体は熱可塑性であり、また
溶媒にも溶解するので容易にフイルム状に成形さ
れ、このフイルムは極めて高い誘電率と、電極に
対する強い接着性を有する。例えばエチレン含有
量68モル%、シアノエチル化度約90%の樹脂のフ
イルムは、25℃、1KHzにおける誘電率は約20を
示す。またエチレン基を有する為熱融解時の流動
性に富み、熱安定性も秀れている。またこのシア
ノエチル化共重合体は見掛け上水に不溶で殆んど
膨潤しないので、吸水性も少ないものと思われ
る。しかし例えばアセトン、メチルエチルケト
ン、ジメチルフオルムアミド、アクリロニトリ
ル、ニトロメタンその他の極性の溶媒に良く溶解
するので、これらの溶媒を用いて容易にキヤスト
フイルムに成形することができ、しかもこのフイ
ルムをガラス板やアルミ板上にキヤストもしくは
熱溶着させたものは極めて強固に接着し容易に剥
離し得ない程度である。
The cyanoethylated ethylene-vinyl alcohol copolymer used in the present invention is thermoplastic and soluble in solvents, so it can be easily formed into a film, and this film has an extremely high dielectric constant and strong adhesion to electrodes. have For example, a resin film with an ethylene content of 68 mol% and a degree of cyanoethylation of about 90% exhibits a dielectric constant of about 20 at 25° C. and 1 KHz. In addition, since it has an ethylene group, it has excellent fluidity when melted and has excellent thermal stability. Furthermore, since this cyanoethylated copolymer is apparently insoluble in water and hardly swells, it is thought to have low water absorption. However, because it dissolves well in polar solvents such as acetone, methyl ethyl ketone, dimethyl formamide, acrylonitrile, nitromethane, and other polar solvents, it is possible to easily form cast films using these solvents, and this film can also be formed on glass plates or aluminum plates. The material that is cast or thermally welded onto the surface is extremely strongly adhered to the extent that it cannot be easily peeled off.

マトリツクス樹脂に分散される蛍光体としては
公知の蛍光体が使用され得る。例えばZnSを母体
とし、これ単独或いは更にCu、I、Cl、Al、
Mn、NdF3等の少なくとも1種を添加したものが
代表的である。
A known phosphor can be used as the phosphor dispersed in the matrix resin. For example, using ZnS as a matrix, it can be used alone or in addition to Cu, I, Cl, Al,
A typical example is one to which at least one of Mn, NdF 3 and the like is added.

蛍光体とマトリツクス樹脂との体積比は蛍光体
100部当りマトリツクス樹脂10〜300部、好ましく
は50〜200部とすべきである。樹脂量がかかる範
囲を上回ると蛍光源そのものが少ない為に輝度が
低くなり、下回ると蛍光体が多すぎてピンホール
が生じ易くなり、印加される電界を高くすること
ができず、輝度が低くなる為である。
The volume ratio of phosphor and matrix resin is
There should be 10 to 300 parts of matrix resin per 100 parts, preferably 50 to 200 parts. If the amount of resin exceeds this range, the brightness will be low because there are few fluorescent sources, and if it is below, there will be too much phosphor and pinholes will easily occur, making it impossible to increase the applied electric field, resulting in low brightness. It is for the sake of becoming.

蛍光体とマトリツクス樹脂とを混合して発光体
層を構成させる方法は任意であり、マトリツクス
樹脂と蛍光体とを直接混練りし、これをフイルム
状に押出す、或いはプレス成形する等によつても
樹脂の優れた流動性により、均一に混合された発
光体層用のフイルムとすることができる。或いは
また蛍光体とマトリツクス樹脂を樹脂の溶剤中で
混合したものをキヤストしてフイルム状とする方
法によつても均一な発光体層フイルムを形成する
ことができる。
The method of mixing the phosphor and matrix resin to form the phosphor layer is arbitrary, such as directly kneading the matrix resin and the phosphor and extruding it into a film, or press-molding it. Due to the excellent fluidity of the resin, it is possible to make a uniformly mixed film for the luminescent layer. Alternatively, a uniform luminescent layer film can be formed by casting a mixture of a phosphor and a matrix resin in a resin solvent to form a film.

本発明で分散型交流電界発光素子の高誘電性樹
脂成分として、例えば発光体層のマトリツクス樹
脂として用いるシアノエチル化エチレン―ビニル
アルコール共重合体は極めて透明性に優れてお
り、発光体層の厚さは比較的厚くても下層の光が
樹脂中で減殺されることが殆んどない。発光体層
の厚みは通常5〜100μの範囲が適当である。
The cyanoethylated ethylene-vinyl alcohol copolymer used in the present invention as a highly dielectric resin component of the dispersed AC electroluminescent device, for example, as a matrix resin for the luminescent layer, has extremely excellent transparency, and the thickness of the luminescent layer Even if the resin is relatively thick, the light in the lower layer is hardly attenuated in the resin. The appropriate thickness of the luminescent layer is usually in the range of 5 to 100 microns.

本発明の素子の構造は任意に構成し得る。例え
ば基盤電極の上に要すれば、耐電圧反射層または
透明な誘電体層を設け、その上に上述した発光体
層を密着し、更にその上にITO等の透明電極が施
される。透明電極は蒸着、スパツター、塗布等に
より直接発光層に設けられていても良いし、例え
ばポリエステル、ポリカーボネート等のフイルム
面上に施こされたITO等の透明電極面を高温下接
着させても良い。又、ITO等の透明電極を施こさ
れた高誘電率フイルムを用いる場合にはITOの反
対側のフイルム面を発光層に接着させても良い。
The structure of the element of the present invention can be configured arbitrarily. For example, if necessary, a voltage-resistant reflective layer or a transparent dielectric layer is provided on the base electrode, the above-mentioned light-emitting layer is adhered thereon, and a transparent electrode such as ITO is further applied thereon. The transparent electrode may be provided directly on the light emitting layer by vapor deposition, sputtering, coating, etc., or for example, the surface of the transparent electrode such as ITO applied on the surface of a film such as polyester or polycarbonate may be bonded under high temperature. . Further, when using a high dielectric constant film coated with a transparent electrode such as ITO, the surface of the film opposite to the ITO may be adhered to the light emitting layer.

最も簡単には、蛍光体とマトリツクス樹脂とよ
りなる前記の発光体層用フイルムをITO蒸着フイ
ルム(ITO面は発光体層側でも、反対側でも任意
に選択可能)と要すれば(反射)耐電圧層を有す
る下部電極層との間に挟んで加熱圧着するだけで
も発光体層は、ITO蒸着フイルムおよび下部電極
と極めて容易に密着させることができる。またフ
イルム化された発光体層を用いる代りに、ITO蒸
着フイルム又は下部電極層上で発光体層をキヤス
ト法により形成させれば、殆んど常温に近い温度
で溶媒を蒸発させた場合でも、ITO蒸着フイルム
或いは下部電極と良好な密着が得られる。
The simplest method is to replace the above-mentioned film for the light-emitting layer, which is made of phosphor and matrix resin, with an ITO vapor-deposited film (the ITO surface can be arbitrarily selected on either the light-emitting layer side or the opposite side). The light-emitting layer can be brought into close contact with the ITO vapor-deposited film and the lower electrode very easily simply by sandwiching it between the lower electrode layer having the voltage layer and heat-pressing it. Furthermore, instead of using a film-formed luminescent layer, if the luminescent layer is formed by a casting method on an ITO vapor-deposited film or a lower electrode layer, even if the solvent is evaporated at a temperature close to room temperature, Good adhesion can be obtained with the ITO vapor deposited film or the lower electrode.

尚、ITO蒸着フイルムの高分子フイルム面が発
光体層と接する場合は、高分子フイルムはできる
だけ高誘電率のものを使用し、発光体層に充分な
電圧が印加されるようにする必要がある。かかる
高誘電率のフイルムとしては例えばフツ化ビニリ
デン重合体若しくはフツ化ビニリデンを主成分と
し、これと共重合可能な単量体との共重合体のフ
イルムが好ましく用いられる。本発明で用いられ
るシアノエチル化エチレン―ビニルアルコール共
重合体はこれらフツ化ビニリデン重合体または共
重合体とも極めて良く密着する。
In addition, if the polymer film surface of the ITO vapor-deposited film is in contact with the luminescent layer, it is necessary to use a polymer film with a high dielectric constant as much as possible, and make sure that sufficient voltage is applied to the luminescent layer. . As such a high dielectric constant film, for example, a vinylidene fluoride polymer or a copolymer film containing vinylidene fluoride as a main component and a monomer copolymerizable with the vinylidene fluoride polymer is preferably used. The cyanoethylated ethylene-vinyl alcohol copolymer used in the present invention adheres extremely well to these vinylidene fluoride polymers or copolymers.

このような高誘電率のフイルムが透明電極と発
光体層間に存在するようにした場合は、このフイ
ルムが耐電圧層となり発光体への電圧分布が均一
となるので、下部電極との間の耐電圧反射層また
は透明誘電体層は省略することができる。上記
ITOの蒸着された高誘電率高分子フイルムとし
て、シアノエチル化エチレン―ビニルアルコール
共重合体を使用することも可能である。この場合
は高分子フイルムは高誘電率と共に高い絶縁性を
有することが望ましく、シアノエチル化エチレン
―ビニルアルコール共重合体としては、多少誘電
率を犠性にしてもエチレン基の含有率を高くして
絶縁耐圧を高めるようにしたほうがよい。尚、
ITO面が発光体層と直接接着される場合は、蒸着
フイルムの高分子フイルムは高誘電率である必要
はなく、例えばポリエステル樹脂、ポリカーボネ
ート樹脂などの透明性のものであればよい。本発
明の発光体層はITOとも極めて良好な密着性を有
している。
When such a high dielectric constant film is placed between the transparent electrode and the light emitter layer, this film becomes a withstand voltage layer and the voltage distribution to the light emitter becomes uniform, so the withstand voltage between the lower electrode and the lower electrode increases. The voltage reflective layer or transparent dielectric layer can be omitted. the above
It is also possible to use cyanoethylated ethylene-vinyl alcohol copolymer as the high dielectric constant polymer film on which ITO is deposited. In this case, it is desirable for the polymer film to have a high dielectric constant as well as high insulation properties, and as a cyanoethylated ethylene-vinyl alcohol copolymer, it is recommended to increase the content of ethylene groups even if the dielectric constant is sacrificed. It is better to increase the dielectric strength. still,
When the ITO surface is directly bonded to the light emitter layer, the polymer film of the vapor-deposited film does not need to have a high dielectric constant, and may be a transparent film such as polyester resin or polycarbonate resin. The phosphor layer of the present invention also has extremely good adhesion to ITO.

シアノエチル化エチレン―ビニルアルコール共
重合体は、下部電極との間に必要に応じて設けら
れる耐電圧反射層のマトリツクス樹脂や、透明誘
電体層フイルムとして使用することができる。
The cyanoethylated ethylene-vinyl alcohol copolymer can be used as a matrix resin for a voltage-resistant reflective layer provided as necessary between the lower electrode and the transparent dielectric layer film.

本発明のEL素子は、発光体層が直接電極と接
着される場合も、或いは電極との間に高誘電率の
樹脂層を有する場合でも、極めて優れた密着性を
有し、また極めて高い誘電率の高い樹脂中に蛍光
体が分散しているので、蛍光体に高い電圧を均一
に印加することができ、極めて高能率、高輝度の
電圧発光をすることができる。
The EL element of the present invention has extremely excellent adhesion, even when the luminescent layer is directly adhered to the electrode, or when a high dielectric constant resin layer is provided between the electrode and the extremely high dielectric constant. Since the phosphor is dispersed in the resin with high efficiency, a high voltage can be uniformly applied to the phosphor, and voltage emission with extremely high efficiency and high brightness can be achieved.

本発明のシアノエチル化エチレン―ビニルアル
コール共重合体をマトリツクス樹脂として用いた
発光層はこれ等全てに適用できるに充分な接着性
を有している。この様な構造の本発明のEL素子
は発光層に用いられるマトリツクス樹脂の高誘電
率が透明電極等への接着性が良好である利点を生
かし、高輝度のEL素子を提供するものである。
The light-emitting layer using the cyanoethylated ethylene-vinyl alcohol copolymer of the present invention as a matrix resin has sufficient adhesion to be applicable to all of these. The EL device of the present invention having such a structure takes advantage of the high dielectric constant of the matrix resin used in the light-emitting layer and its good adhesion to transparent electrodes, etc., to provide a high-luminance EL device.

以下本発明を実施例で説明を加える。 The present invention will be explained below with reference to Examples.

実施例 エチレン―ビニルアルコール共重合体(クラレ
製、エバールEP―Fエチレン含量32モル%)を
アクリロニトリルによりシアノエチル化した。N
含量の測定によりビニルアルコールへのシアノエ
チル化度は約90%であつた。このキヤストフイル
ムの誘電率は1KHzで20の高い値を示した。この
樹脂は、アセトン、メチルエチルケトン、ジメチ
ルフオルムアミド等の極性溶媒に可溶でフイルム
は極めて透明性が良好である。又、ガラス金属等
に対する接着性、ITO透明電極(ポリエステルフ
イルム蒸着)に対する接着性も極めて良好で、例
えばポリエステルフイルムに蒸着されたITO面と
200℃、2分間のプレスで全くはがれない程度に
接着した。
Example Ethylene-vinyl alcohol copolymer (manufactured by Kuraray, EVAL EP-F ethylene content: 32 mol%) was cyanoethylated with acrylonitrile. N
The degree of cyanoethylation to vinyl alcohol was determined to be approximately 90%. The dielectric constant of this cast film showed a high value of 20 at 1KHz. This resin is soluble in polar solvents such as acetone, methyl ethyl ketone, and dimethyl formamide, and the film has extremely good transparency. In addition, it has extremely good adhesion to glass metals, etc., and to ITO transparent electrodes (polyester film vapor deposition).
Pressing at 200°C for 2 minutes made the adhesive adhere to such an extent that it would not come off at all.

一方Cu、Alを添加したZnS発光体と上記シア
ノエチル化樹脂とをZnS/シアノエチル化樹脂=
60/40の体積比でアセトン中で混合し、後者を溶
解させた後100μのAl箔に被覆し、アセトンを乾
燥除去した。形成された発光体層の厚みは60μで
あつた。
On the other hand, ZnS/cyanoethylated resin = ZnS/cyanoethylated resin
The mixture was mixed in acetone in a volume ratio of 60/40, the latter was dissolved and then coated on 100μ Al foil, and the acetone was removed by drying. The thickness of the formed luminescent layer was 60μ.

Al箔とは反対の面に、ポリエステル面上に蒸
着されたITO電極面を200℃、15Kg/cm2の圧力で
接着させ透明電極層を形成した。
The ITO electrode surface deposited on the polyester surface was adhered to the surface opposite to the Al foil at 200° C. and a pressure of 15 kg/cm 2 to form a transparent electrode layer.

Al箔ならびにITO面と、シアノエチル化樹脂を
用いたEL発光層との接着性は非常に良好であ
り、無理に引きはがそうとするとAl箔が切断し
てしまうほどであつた。
The adhesion between the Al foil and ITO surface and the EL light-emitting layer using cyanoethylated resin was so good that the Al foil would break if you tried to forcefully peel it off.

この素子に発光体の厚み60μに対し周波数1K
Hz2Vrms/μmの電界を印加し、その輝度を測定
したところ42cd/m2を示した。比較例として、
上記シアノエチル化樹脂の代りに、シアノエチル
セルロースを用いた以外実施例と全く同一の素子
を作成した。このものはITO電極と発光体の接着
性も悪く、発光面内で輝度にムラがあつた。輝度
は30cd/m2であつた。
This element has a frequency of 1K for a light emitter thickness of 60μ.
When an electric field of Hz2Vrms/μm was applied and the brightness was measured, it was found to be 42 cd/m 2 . As a comparative example,
A device completely identical to the example was prepared except that cyanoethyl cellulose was used instead of the cyanoethylated resin. This product also had poor adhesion between the ITO electrode and the light emitting body, resulting in uneven brightness within the light emitting surface. The brightness was 30 cd/ m2 .

以上の実施例および説明から、本発明による分
散型EL素子は輝度も大きく、かつAl箔電極、
ITO電極との接着性も良好なために、機械的な曲
げにも強く産業上非常に有用である。
From the above examples and explanations, it can be seen that the distributed EL device according to the present invention has high brightness, and has Al foil electrodes.
Because it has good adhesion with ITO electrodes, it is resistant to mechanical bending and is extremely useful industrially.

以上本発明を例示したが上述の例は本発明の技
術的思想に基いて更に変形が可能であることが理
解されよう。
Although the present invention has been illustrated above, it will be understood that the above-mentioned examples can be further modified based on the technical idea of the present invention.

Claims (1)

【特許請求の範囲】[Claims] 1 シアノエル化エチレン―ビニルアルコール共
重合体を高誘電性樹脂成分として用いたことを特
徴とする分散型交流電界発光素子。
1. A dispersed AC electroluminescent device characterized by using a cyanoelated ethylene-vinyl alcohol copolymer as a highly dielectric resin component.
JP56051243A 1981-04-06 1981-04-07 Dispersion type ac electric field light emitting element Granted JPS57165997A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP56051243A JPS57165997A (en) 1981-04-07 1981-04-07 Dispersion type ac electric field light emitting element
US06/366,031 US4413090A (en) 1981-04-06 1982-04-06 Cyanoethylated olefin-vinyl alcohol copolymer and dielectric material and adhesive comprising the same
DE8282102946T DE3265547D1 (en) 1981-04-06 1982-04-06 Cyanoethylated olefin-vinyl alcohol copolymer and dielectric material and adhesive comprising the same
EP19820102946 EP0062351B1 (en) 1981-04-06 1982-04-06 Cyanoethylated olefin-vinyl alcohol copolymer and dielectric material and adhesive comprising the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56051243A JPS57165997A (en) 1981-04-07 1981-04-07 Dispersion type ac electric field light emitting element

Publications (2)

Publication Number Publication Date
JPS57165997A JPS57165997A (en) 1982-10-13
JPS6259879B2 true JPS6259879B2 (en) 1987-12-14

Family

ID=12881501

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56051243A Granted JPS57165997A (en) 1981-04-06 1981-04-07 Dispersion type ac electric field light emitting element

Country Status (1)

Country Link
JP (1) JPS57165997A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0628775U (en) * 1992-09-08 1994-04-15 株式会社カイジョー Snowfall measurement device
US6441551B1 (en) 1997-07-14 2002-08-27 3M Innovative Properties Company Electroluminescent device and apparatus
US11575450B2 (en) 2018-10-26 2023-02-07 Qualcomm Incorporated Self-radiated loopback test procedure for millimeter wave antennas
KR20230019614A (en) * 2021-08-02 2023-02-09 한밭대학교 산학협력단 Near-field measurement system using frequency conversion of transmission/reception signals
KR20230019613A (en) * 2021-08-02 2023-02-09 한밭대학교 산학협력단 Low-cost near-field measurement system

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0628775U (en) * 1992-09-08 1994-04-15 株式会社カイジョー Snowfall measurement device
US6441551B1 (en) 1997-07-14 2002-08-27 3M Innovative Properties Company Electroluminescent device and apparatus
US11575450B2 (en) 2018-10-26 2023-02-07 Qualcomm Incorporated Self-radiated loopback test procedure for millimeter wave antennas
KR20230019614A (en) * 2021-08-02 2023-02-09 한밭대학교 산학협력단 Near-field measurement system using frequency conversion of transmission/reception signals
KR20230019613A (en) * 2021-08-02 2023-02-09 한밭대학교 산학협력단 Low-cost near-field measurement system

Also Published As

Publication number Publication date
JPS57165997A (en) 1982-10-13

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