JPS6258099B2 - - Google Patents
Info
- Publication number
- JPS6258099B2 JPS6258099B2 JP584079A JP584079A JPS6258099B2 JP S6258099 B2 JPS6258099 B2 JP S6258099B2 JP 584079 A JP584079 A JP 584079A JP 584079 A JP584079 A JP 584079A JP S6258099 B2 JPS6258099 B2 JP S6258099B2
- Authority
- JP
- Japan
- Prior art keywords
- filament
- insulating substrate
- jig
- directly heated
- filament support
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 21
- 239000010953 base metal Substances 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 9
- 238000003466 welding Methods 0.000 claims description 4
- 238000003825 pressing Methods 0.000 claims 1
- 125000006850 spacer group Chemical group 0.000 description 6
- 239000000919 ceramic Substances 0.000 description 3
- 238000005219 brazing Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000000284 resting effect Effects 0.000 description 1
Landscapes
- Solid Thermionic Cathode (AREA)
Description
【発明の詳細な説明】
この発明は陰極線管に使用して好適な直熱型陰
極構体の製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing a directly heated cathode assembly suitable for use in a cathode ray tube.
一般に陰極線管には電子銃が内蔵され、電子ビ
ームを発射する陰極が備えられている。この陰極
として直熱型を使用すると、傍熱型に比べて消費
電力が少なく、且つ点火即ち電源スイツチをオン
（ON）してから動作する迄のいわゆる始動時間が
早いという特徴があり、携帯用テレビカメラの撮
像管やモニタ管には非常に便利である。ところが
直熱型の陰極には宿命的な問題がある。その一つ
に陰極つまりフイラメントは加熱すると熱膨脹の
ため長さが伸びるので、普通スプリングを入れて
寸法を補正しないと点火時に振動してノイズを発
生し、雑音や雑像の原因となる。又、この寸法変
化が電子銃の他の電極特に第１格子電極との寸法
変化となつて所定の特性が得られない。更にこの
寸法変化が陰極線管の使用中に徐々に現われる
と、輝度変調が不能となつて致命的な損傷を受け
る。この寸法によつて定まるパービアンスＧは次
式で決まり、２乗で作用するから僅かな寸法変化
も電気特性には大巾に影響することになる。 Generally, a cathode ray tube has a built-in electron gun and a cathode that emits an electron beam. When a directly heated type is used as the cathode, it consumes less power than an indirectly heated type, and has the characteristics of a quick start-up time from ignition, that is, turning on the power switch to operation, and is portable. Very useful for television camera image pickup tubes and monitor tubes. However, directly heated cathodes have a fatal problem. One of them is that when the cathode, or filament, is heated, its length increases due to thermal expansion, so unless a spring is inserted to correct the dimensions, it will vibrate during ignition, causing noise and noise. Further, this dimensional change results in a dimensional change with respect to other electrodes of the electron gun, particularly the first grid electrode, and predetermined characteristics cannot be obtained. Furthermore, if this dimensional change gradually appears during use of the cathode ray tube, brightness modulation becomes impossible, resulting in fatal damage. The perveance G determined by this dimension is determined by the following equation, and since it acts as a square, even a slight change in dimension will have a large effect on the electrical characteristics.
Ｇ＝2.33×10-6Ａ／ｄ２
但し、ｄ：電極間距離
Ａ：陰極面積
ところで、従来から一般に使用されている直熱
型陰極構体は、第１図及び第２図に示すように構
成され、図中１はセラミツクからなる絶縁基板で
ある。この絶縁基板１は電子銃の第１格子電極内
に配設されて電極の絶縁体になるが、略Ｈ状にし
て中心に透孔２を有し、中央両端にはそれぞれ板
状のフイラメント支持体３，４がガラス付又は鑞
付等の方法により対向して固定されている。そし
てこのフイラメント支持体３，４には、それぞれ
スプリング５，６が外方に突出して固定され、こ
のスプリング５，６の突出した端部には陰極本体
であるフイラメント７が溶接により固定されてい
る。この場合、フイラメント７は前記絶縁基板１
の中央上部に接している。更にこのフイラメント
７の上面には前記透孔２に対応する位置つまり電
子銃の軸心に沿う位置に基体金属板（ベースメタ
ル）８が溶接固定されている。この基体金属板８
はSi及びMgを0.05％程度含有するNiからなり、
電子放射物質の環元力を有するものである。そし
てこの基体金属板８の上には電子放射物質９が被
着されている。このような直熱型陰極において、
点火すると電流がフイラメント７に流れて基体金
属板８が加熱され、基体金属板８の熱膨脹が起つ
てＹ―Y′方向に伸びる。この伸びを前記スプリ
ング５，６により側方に引張つて吸収する構造に
なつている。 G=2.33×10 -6 A/d 2 , where d: distance between electrodes A: cathode area By the way, the directly heated cathode structure that has been commonly used has the structure as shown in Figures 1 and 2. 1 in the figure is an insulating substrate made of ceramic. This insulating substrate 1 is disposed within the first grid electrode of the electron gun and becomes an insulator of the electrode, and is approximately H-shaped and has a through hole 2 in the center, and plate-shaped filament supports are provided at both ends of the center. The bodies 3 and 4 are fixed facing each other by a method such as glass attachment or brazing. Springs 5 and 6 are fixed to the filament supports 3 and 4 so as to protrude outward, respectively, and a filament 7, which is a cathode body, is fixed to the protruding ends of the springs 5 and 6 by welding. . In this case, the filament 7 is connected to the insulating substrate 1
It touches the top center of Further, a base metal plate 8 is welded and fixed to the upper surface of the filament 7 at a position corresponding to the through hole 2, that is, at a position along the axis of the electron gun. This base metal plate 8
is made of Ni containing about 0.05% Si and Mg,
It has the ring force of an electron-emitting substance. An electron emitting material 9 is deposited on the base metal plate 8. In such a directly heated cathode,
When ignited, a current flows through the filament 7 and heats the base metal plate 8, causing thermal expansion of the base metal plate 8 and extending it in the YY' direction. The structure is such that this elongation is absorbed by being pulled laterally by the springs 5 and 6.
ところで上記のような従来の直熱型陰極構体に
おいては、絶縁基板１上に突出部１０，１１を一
体に形成してフイラメント７を接触させている
が、絶縁基板１はセラミツクから作られるので突
出部１０，１１の成形は非常に困難であり、欠け
が発生し易い。従つてこの突出部１０，１１を高
く形成するのは実際上は難しい。又、突出部１
０，１１を高くできないため、製造工程のバラツ
キ上、絶縁基板１の上面以下に基体金属板８が下
がつてしまうことがあり、陰極つまり電子放射物
質９の高さを測定できない。この結果、第１格子
電極と絶縁基板１との間隔を保つためのスペーサ
の適正形状が決められない。 By the way, in the conventional directly heated cathode structure as described above, the protrusions 10 and 11 are integrally formed on the insulating substrate 1 and the filament 7 is brought into contact with the protrusions 10 and 11, but since the insulating substrate 1 is made of ceramic, It is very difficult to mold parts 10 and 11, and chips are likely to occur. Therefore, it is actually difficult to form the protrusions 10, 11 high. Also, the protrusion 1
0 and 11 cannot be made high, the base metal plate 8 may be lowered below the upper surface of the insulating substrate 1 due to variations in the manufacturing process, and the height of the cathode, that is, the electron emitting material 9 cannot be measured. As a result, the appropriate shape of the spacer for maintaining the distance between the first grid electrode and the insulating substrate 1 cannot be determined.
この発明は上記事情に鑑みなされたもので、フ
イラメント支持体の一方に調整手段を設けること
により、電子放射物質と第１格子電極との間隔を
規定し、而も絶縁基板に突出部を形成しないでも
よい直熱型陰極構体の製造方法を提供することを
目的とする。 This invention was made in view of the above circumstances, and by providing an adjusting means on one side of the filament support, the distance between the electron emitting material and the first grid electrode is regulated, and no protrusion is formed on the insulating substrate. It is an object of the present invention to provide a method for manufacturing a directly heated cathode assembly.
以下、図面を参照してこの発明の一実施例を詳
細に説明する。この発明により得られる直熱型陰
極構体は第３図に示すように構成され、１２は絶
縁基板である。この絶縁基板１２はセラミツクス
から成り、所定厚さの板体にして一端には切欠き
１３が形成されている。このような絶縁基板１２
には一対のフイラメント支持体１４，１５が所定
間隔を保ち対向して貫通植設されている。このフ
イラメント支持体１４，１５にはフイラメント１
６が張設されるが、この場合フイラメント１６の
一端は棒状のフイラメント支持体１４に固着さ
れ、他端は切欠き１３に位置するスプリング１７
を介して筒状のフイラメント支持体１５に固着さ
れ、この他端付近はフイラメント支持体１５内に
位置する調整可動棒１８の先端に接している。
又、フイラメント１６には略中央に基体金属板１
９が固着され、この基体金属板１９には電子放射
物質２０が塗布されている。 Hereinafter, one embodiment of the present invention will be described in detail with reference to the drawings. The directly heated cathode structure obtained according to the present invention is constructed as shown in FIG. 3, and 12 is an insulating substrate. This insulating substrate 12 is made of ceramics, is a plate of a predetermined thickness, and has a notch 13 formed at one end. Such an insulating substrate 12
A pair of filament supports 14 and 15 are installed through and facing each other at a predetermined distance. The filament supports 14 and 15 have a filament 1
In this case, one end of the filament 16 is fixed to a rod-shaped filament support 14, and the other end is fixed to a spring 17 located in the notch 13.
It is fixed to the cylindrical filament support 15 via a cylindrical filament support 15 , and the vicinity of this other end is in contact with the tip of a movable adjustment rod 18 located inside the filament support 15 .
Further, the filament 16 has a base metal plate 1 approximately in the center.
9 is fixed to the base metal plate 19, and an electron emitting material 20 is coated on the base metal plate 19.
さて次に上記構成のこの発明に係る直熱型陰極
構体の製造方法について述べる。 Next, a method for manufacturing the directly heated cathode assembly according to the present invention having the above structure will be described.
絶縁基板１２の予め穿つた所定の透孔にフイ
ラメント支持体１４，１５を挿入し、ガラス付
け法又は鑞付け法により固着する。 The filament supports 14 and 15 are inserted into predetermined through holes drilled in the insulating substrate 12, and fixed by a glassing method or a brazing method.
次に一方のフイラメント支持体１５にスプリ
ング１７を溶接する。 Next, a spring 17 is welded to one of the filament supports 15.
上記，の工程とは別の工程でフイラメン
ト１６に基体金属板１９を溶接し、更に基体金
属板１９の表面に電子放射物質２０を塗布す
る。 A base metal plate 19 is welded to the filament 16 in a process different from the above process, and an electron emitting material 20 is further applied to the surface of the base metal plate 19.
上記の工程で得られた構体を治具を用いて
上記までの工程で得られた構体に溶接する。
つまりフイラメント１６の一端をフイラメント
支持体１４に溶接し、他端をスプリング１７の
一端に溶接する。この溶接の際にはスプリング
１７を内側に曲げて溶接を行ない、前記治具を
取外した際、スプリング１７の張力でフイラメ
ント１６が張られる。 The structure obtained in the above steps is welded to the structure obtained in the steps up to the above using a jig.
That is, one end of the filament 16 is welded to the filament support 14 and the other end to one end of the spring 17. During this welding, the spring 17 is bent inward to perform the welding, and when the jig is removed, the filament 16 is stretched by the tension of the spring 17.
以上の工程で得られたサブアセンブリ体を、更
に治具を用いて電子放射物質２０の位置を規定す
る訳けであるが、この発明の特徴であるので以下
詳しく述べることにする。 The position of the electron emitting material 20 in the subassembly obtained through the above steps is further defined using a jig, which is a feature of the present invention and will be described in detail below.
第４図に示すように筒状にして段部２１，２
２を有する第１の治具２３を用意する。前記段
部２１と２２は同一面上にあり、各段部２１，
２２に接する治具内面２４，２５は各段部２
１，２２と直角の関係にある。この第１の治具
２３の内側に絶縁基板１２の上面両端をそれぞ
れ段部２１，２２に当たるように嵌合し、絶縁
基板１２の下面を第２の治具２６により下から
押圧する。 As shown in FIG.
2 is prepared. The stepped portions 21 and 22 are on the same plane, and each stepped portion 21,
The inner surfaces 24 and 25 of the jig in contact with the respective steps 2
1 and 22 and are in a right-angled relationship. Both ends of the upper surface of the insulating substrate 12 are fitted inside the first jig 23 so as to touch the stepped portions 21 and 22, respectively, and the lower surface of the insulating substrate 12 is pressed from below by the second jig 26.
第１の治具２３内に、第３の治具２７を第１
の治具２３の内面２４，２５に摺動自在に嵌合
し、一端面２７ａをフイラメント１６の一端
（フイラメント支持体１４側）に軽く接触させ
る。尚、第３の治具２７の一端面２７ａと、両
側端面２７ｂ，２７ｃは直角の関係に設定して
ある。 The third jig 27 is placed inside the first jig 23.
The jig 23 is slidably fitted into the inner surfaces 24 and 25 of the jig 23, and one end surface 27a is brought into light contact with one end of the filament 16 (on the side of the filament support 14). Note that one end surface 27a of the third jig 27 and both end surfaces 27b and 27c are set at right angles.
調整可動棒１８を矢印方向に押上げると、第
５図に示すようにフイラメント１６の調整可動
棒１８上に載つている部分が、第３の治具２７
の一端面２７ａに当接し、フイラメント１６は
絶縁基板１２の上面と平行に張られる。 When the movable adjustment rod 18 is pushed up in the direction of the arrow, the portion of the filament 16 resting on the movable adjustment rod 18 is moved to the third jig 27 as shown in FIG.
The filament 16 is in contact with one end surface 27a and is stretched parallel to the upper surface of the insulating substrate 12.
上記の状態で調整可動棒１８とフイラメン
ト支持体１５を溶接する。 In the above state, the adjustable movable rod 18 and the filament support 15 are welded.
この発明により得られる直熱型陰極構体は上記
説明及び図示のように構成され、従来のような突
出部１０，１１を削除し、フイラメント支持体１
４，１５を絶縁基板１２面から電子放射物質２０
までの高さを大きくした構造にしているため、電
子銃に組み込んだ場合の第１格子電極―陰極スペ
ーサが作り易い。即ち、この発明により得られる
直熱型陰極を用いる場合は、第６図の如きスペー
サ２８を使用するが、高さを大きくできる。しか
し、従来の場合は第７図の如きスペーサ２９であ
り、端部に打抜きバリ３０が発生し易い。又、こ
の発明ではフイラメント支持体１５の一方に調整
手段即ち調整可動棒１８を設けているので、フイ
ラメント１６を張つたときのたるみを調整可動棒
１８により補正できるし、フイラメント１６の彎
曲等も修正することができ、常に電子放射物質２
０と第１格子電極との間隔を所定の寸法に維持す
ることができる。更に調整可動棒１８によりフイ
ラメント１６に張力を与えているため、長時間の
使用においてもフイラメント１６のたるみは少な
く、従つて電子管特性のカツトオフの変化が少な
い。又、この発明の製造方法によれば、精度の優
れた直熱型陰極構体を得ることができる。 The directly heated cathode structure obtained according to the present invention is constructed as described above and shown in the drawings, the conventional protrusions 10 and 11 are omitted, and the filament support 1 is
4 and 15 from the insulating substrate 12 surface to the electron emitting material 20
Since the structure has a large height, it is easy to make a first grid electrode-cathode spacer when incorporated into an electron gun. That is, when using the directly heated cathode obtained by the present invention, a spacer 28 as shown in FIG. 6 is used, but the height can be increased. However, in the conventional case, a spacer 29 as shown in FIG. 7 is used, and punching burrs 30 are likely to occur at the ends. Further, in this invention, since the adjusting means, that is, the adjustable movable rod 18 is provided on one side of the filament support 15, the slack when the filament 16 is stretched can be corrected by the adjustable movable rod 18, and the curvature of the filament 16 can also be corrected. can always be an electron-emitting substance 2
0 and the first grid electrode can be maintained at a predetermined dimension. Furthermore, since tension is applied to the filament 16 by the adjustable movable rod 18, there is little slack in the filament 16 even during long-term use, and therefore, there is little change in the cutoff of the electron tube characteristics. Further, according to the manufacturing method of the present invention, a directly heated cathode assembly with excellent precision can be obtained.
尚、この発明により得られる直熱型陰極構体は
撮像管やモニタ管に限らず陰極線管一般に利用で
きることは言う迄もない。 It goes without saying that the directly heated cathode assembly obtained by the present invention can be used not only for image pickup tubes and monitor tubes but also for cathode ray tubes in general.
以上説明したようにこの発明によれば、実用的
価値大なる直熱型陰極構体の製造方法を提供する
ことができる。 As explained above, according to the present invention, it is possible to provide a method for manufacturing a directly heated cathode assembly with great practical value.
第１図及び第２図は従来の直熱型陰極構体を示
す斜視図と断面図、第３図はこの発明により得ら
れる直熱型陰極構体を示す斜視図、第４図及び第
５図は同じく直熱型陰極構体の製造方法を示す断
面図、第６図はこの発明により得られる直熱型陰
極構体を用いて電子銃構体を組立る場合に使用す
るスペーサを示す断面図、第７図は従来の直熱型
陰極構体の場合に使用するスペーサを示す断面図
である。
１２…絶縁基板、１４，１５…フイラメント支
持体、１６…フイラメント、１７…スプリング、
１８…調整可動棒、１９…基体金属板、２０…電
子放射物質、２１，２２…段部、２３…第１の治
具、２６…第２の治具、２７…第３の治具。
1 and 2 are a perspective view and a sectional view showing a conventional directly heated cathode structure, FIG. 3 is a perspective view showing a directly heated cathode structure obtained by the present invention, and FIGS. 4 and 5 are Similarly, FIG. 6 is a sectional view showing a method of manufacturing a directly heated cathode assembly, and FIG. 7 is a sectional view showing a spacer used when assembling an electron gun assembly using the directly heated cathode assembly obtained by the present invention. is a sectional view showing a spacer used in a conventional directly heated cathode assembly. 12... Insulating substrate, 14, 15... Filament support, 16... Filament, 17... Spring,
18... Adjustment movable rod, 19... Base metal plate, 20... Electron emitting material, 21, 22... Step portion, 23... First jig, 26... Second jig, 27... Third jig.
Claims (1)
整可動棒を有する第２のフイラメント支持体とを
貫通固着し、これら第１のフイラメント支持体と
第２のフイラメント支持体との間にフイラメント
を張設し、このフイラメントに基体金属板及び電
子放射物質を取付けてなる直熱型陰極構体の製造
方法において、 前記絶縁基板の上面の一部が第１の治具の内面
に設けられた段部に当接するように、第２の治具
により前記絶縁基板を下方から押圧する工程と、 前記第１の治具内に摺動自在に配置され前記絶
縁基板と平行な面を有する第３の治具を、前記絶
縁基板の上方より前記第２のフイラメント支持体
上のフイラメントに当接する工程と、 前記フイラメントの前記調整可動棒上に載つて
いる部分が、前記第３の治具の平行な面に当たる
まで、前記調整可動棒を押し上げる工程と、 前記調整可動棒と前記第２のフイラメント支持
棒とを溶接固定する工程と を具備することを特徴とする直熱型陰極構体の製
造方法。[Scope of Claims] 1. A first filament support and a second filament support having a movable adjustment rod are penetrated and fixed to an insulating substrate, and the first filament support and the second filament support are fixed to each other. In the method for manufacturing a directly heated cathode structure, in which a filament is stretched between the filaments and a base metal plate and an electron emitting material are attached to the filament, a part of the upper surface of the insulating substrate is on the inner surface of the first jig. a step of pressing the insulating substrate from below with a second jig so as to come into contact with a step provided thereon; contacting the filament on the second filament support from above the insulating substrate with a third jig having A directly heated cathode assembly comprising the steps of: pushing up the movable adjustment rod until it hits a parallel surface of a tool; and fixing the movable adjustment rod and the second filament support rod by welding. Production method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP584079A JPS5598436A (en) | 1979-01-22 | 1979-01-22 | Directly heated cathode structure and its manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP584079A JPS5598436A (en) | 1979-01-22 | 1979-01-22 | Directly heated cathode structure and its manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5598436A JPS5598436A (en) | 1980-07-26 |
| JPS6258099B2 true JPS6258099B2 (en) | 1987-12-04 |
Family
ID=11622209
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP584079A Granted JPS5598436A (en) | 1979-01-22 | 1979-01-22 | Directly heated cathode structure and its manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5598436A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0528444Y2 (en) * | 1987-07-07 | 1993-07-21 |
-
1979
- 1979-01-22 JP JP584079A patent/JPS5598436A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0528444Y2 (en) * | 1987-07-07 | 1993-07-21 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5598436A (en) | 1980-07-26 |
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