JPS6252796A - Memory access controller - Google Patents

Memory access controller

Info

Publication number
JPS6252796A
JPS6252796A JP60192031A JP19203185A JPS6252796A JP S6252796 A JPS6252796 A JP S6252796A JP 60192031 A JP60192031 A JP 60192031A JP 19203185 A JP19203185 A JP 19203185A JP S6252796 A JPS6252796 A JP S6252796A
Authority
JP
Japan
Prior art keywords
memory
address
adp4
content
writing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60192031A
Other languages
Japanese (ja)
Other versions
JPH07109716B2 (en
Inventor
Takashi Tsunoda
角田 孝
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP19203185A priority Critical patent/JPH07109716B2/en
Publication of JPS6252796A publication Critical patent/JPS6252796A/en
Publication of JPH07109716B2 publication Critical patent/JPH07109716B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Abstract

PURPOSE:To make average the number of times to write on or erase from a memory and to extend the access life of the memory by enabling the management of the addressing to the memory with providing a counting means. CONSTITUTION:A counter (COU) 3 counts the number of times of writing or erasing of an EEPROM2. An address pointer (ADP) 4 indicates in order a write address to the EEPROM2 through a data bus (DB) 5 in one direction from the high-order to the low-order or vice versa. When a data is written on the EEPROM2, the data is written on a prescribed address based upon the content of the address pointer 4 from a MPU1 through the data bus 5, also increasing the content of the ADP4 by '1'. At such a time, when the content of the ADP4 is progressed to the address of one chip share of the EEPRM2, the MPU1 initializes the content of the ADP4, increasing the content of the counting counter (COU) 3 by '1' through the DB5.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、電気的消去可能なプログラマブルROMの
消去または害き込みを制御する装置に関するものである
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a device for controlling erasure or damage of an electrically erasable programmable ROM.

〔従来の技術〕[Conventional technology]

従来、この種の装置において、EEFROMへのデータ
書き込みまたは消去したりするのに、消去または古き込
み回数計数カウンタを備え、巾にその動作が実行される
度に計数をカウントアツプまたはカウントダウンするこ
とで?庁理していた。
Conventionally, in this type of device, when writing or erasing data to the EEFROM, a counter is provided to count the number of erasures or old data, and the counter is counted up or down every time the operation is executed. ? He was managing the office.

すなわち、製造メーカ側が補償している消去あるいは、
1)き込み回数を越えない範囲で使用する方法を採用し
てきた。
In other words, erasure that is compensated by the manufacturer or
1) We have adopted a method of using within the range of the number of times of inking.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

しかしながら、特定番地のみの古き込みがなされていた
りすると、その番地のアクセス回数だけが他の番地より
も早く寿命に到達してしまい、他の番地はアクセス可能
にも関わらず、そのチップを使用できなくなり、メモリ
1Bき込み効率を著しく低下させてしまう問題点があっ
た。
However, if only a specific address is stale, the number of accesses at that address will reach the end of its lifespan earlier than other addresses, and the chip cannot be used even though other addresses can be accessed. There was a problem in that the efficiency of writing into the memory 1B was significantly lowered.

この発明は、上記の問題点を解消するためになされたも
ので、メモリへの書き込みまたは消去回数をモ均化させ
て、メモリのアクセス寿命を延命できるメモリアクセス
制御装置を提供することを目的とする。
The present invention was made in order to solve the above-mentioned problems, and an object of the present invention is to provide a memory access control device that can prolong the access life of the memory by equalizing the number of times of writing or erasing to the memory. do.

〔問題点を解決するためのf段〕[F-stage to solve problems]

この発明に係るメモリ;行き込み制御装置は、電磁的消
去可能なプログラマブルリードオンリメモリの8き込み
または消去アドレスを高位から低位または低位から高位
に向って一方向に逐次指示する指示り段と、この指示り
段による電気的消去可能なプログラマブルリードオンリ
メモリへの古き込みまたは消去回数をカウントするカウ
ント手段とを設けたものである。
The memory according to the present invention; the access control device includes an instruction stage for sequentially instructing 8 write or erase addresses of an electromagnetically erasable programmable read-only memory in one direction from a high level to a low level or from a low level to a high level; A counting means is provided for counting the number of times the indicating stage is used to write or erase the electrically erasable programmable read-only memory.

〔作用〕[Effect]

この発明においては、指示−手段により指示される書き
込みまた。は消去アドレスに応じて電気的消去可能なプ
ログラマブルリードオンリメモリを高位から低位または
低位から高位に向って一方向に逐次アクセスして行き、
電気的消去可能なプログラマブルリードオンリメモリの
全てのアドレスをアクセスする毎にカウント手段が電気
的消去可能なプログラマブルリードオンリメモリへの書
き込みまたは消去回数をカウントして行く。
In the present invention, writing or writing is instructed by the instruction means. sequentially accesses the electrically erasable programmable read-only memory in one direction from high to low or from low to high according to the erase address,
Each time all addresses of the electrically erasable programmable read-only memory are accessed, the counting means counts the number of times the electrically erasable programmable read-only memory is written or erased.

〔実施例〕〔Example〕

第1図はこの発明の一実施例を示すメモリアクセス制御
装置を説明するためのブロック図であり、1はマイクロ
コンピュータ(MPU)で、第2図に示すような制御り
順を記憶したROM1aを(fしている。MPU 1は
ROM 1 aに記憶された制御r、順に従って電気的
消去可能なEEPROM2へのデーター′iき込み消去
を総括的に制御する。3はこの発明のカウント手段をな
す計数カウンタ(COU) で、E E F ROM 
2 (7) iBき込ミマたは消去回数をカウントする
。4はこの発明の指示r段をなすアドレスポインタ(A
DP)で、EEPROM2への一:き込みアドレスをデ
ータバス(DB)5を介して高位から低位または低位か
ら高位に向って一方向に逐次指示する。EEFROM2
にデータを!3き込む場合は、MPUIよりデータバス
5を介して、アドレスポインタ4の内容に基づいて所定
の番地へデータを占き込むとともに、ADP4の内容を
(IJ インクリメントする。
FIG. 1 is a block diagram for explaining a memory access control device showing an embodiment of the present invention, in which 1 is a microcomputer (MPU), and a ROM 1a that stores a control order as shown in FIG. (f). The MPU 1 collectively controls the writing and erasing of data 'i into the electrically erasable EEPROM 2 according to the control r stored in the ROM 1a. 3 is the counting means of the present invention. Eggplant counting counter (COU), E E F ROM
2 (7) Count the number of iB transfers or deletions. 4 is an address pointer (A
DP), a write address to the EEPROM 2 is sequentially instructed in one direction from high to low or from low to high through the data bus (DB) 5. EEFROM2
Data to! 3, data is read from the MPUI to a predetermined address based on the contents of the address pointer 4 via the data bus 5, and the contents of ADP4 are incremented by (IJ).

ココテ、ADP4(7)内容がEEFROM21チップ
分の番地まで進んだら、MPU 1はADP4の内容を
初期設定し、DBSを介して計数カウンタC0U3の内
容をrlJ インクリメントする。
When the contents of ADP4 (7) advance to the address of 21 EEFROM chips, MPU 1 initializes the contents of ADP4 and increments the contents of counter C0U3 by rlJ via the DBS.

この一連の動作をC0U3の内容が所定回数(製品によ
り異なる)に到達するまで繰り返す。
This series of operations is repeated until the contents of C0U3 reach a predetermined number of times (varies depending on the product).

次に第2図を参照しながらこの発明におけるMPUIに
応じたメモリアクセス制御動作を説明する。
Next, the memory access control operation according to the MPUI in the present invention will be explained with reference to FIG.

第2図はこの発明におけるMPU1によるメモリアクセ
ス制御動作を説明するフローチャートである。なお、(
1)〜(7)は各ステップを示す。また、EEFROM
2の容量は1例えば8にバイト(8192wordX 
8bit)で、消去または害き込み回数の保証は100
00回で、占き込み開始アドレスはr0000+i、〜
1FFFI6Jであるとする。
FIG. 2 is a flowchart illustrating the memory access control operation by the MPU 1 in the present invention. In addition,(
1) to (7) indicate each step. Also, EEFROM
The capacity of 2 is 1, for example 8 bytes (8192 words
8bit), the number of times it is erased or damaged is guaranteed to be 100.
00 times, the fortune-telling start address is r0000+i, ~
Suppose that it is 1FFFI6J.

まず、MPU 1はROM1aに格納された制御手順に
応じてADP4およびC0U3の初期化を行い(1)、
ADP4およびC0U3の内容をrOJにする0次いで
、MPU 1の制御によりEEPROM2へデータを書
き込む(2)、その直後、ADP4の内容にrlJをイ
ンクリメントする(3)。次いで、ADP4の内容がr
2000Jに到達したかどうかを判定しく4)、YES
ならばADP4の初期化、すなわちADP4の内容をI
Jに、没定す6(5)、 次い−c’、C0U5(7)
内容をrlJ インクリメントして(6)、C0U3の
内容がr2710+J 、すなわち1万回に到達したか
どうかを判定する(7)。この判定で、1万回に到達し
ていたら、EEFROM2への書き込みを終了し、1万
回以下であればステップ(2)へ戻る。
First, MPU 1 initializes ADP4 and C0U3 according to the control procedure stored in ROM1a (1),
The contents of ADP4 and C0U3 are set to rOJ. Next, data is written to EEPROM2 under the control of MPU 1 (2), and immediately after that, rlJ is incremented to the contents of ADP4 (3). Then, the contents of ADP4 are r
Please judge whether it has reached 2000J 4), YES
Then, initialize ADP4, that is, change the contents of ADP4 to I
J, 6 (5), then -c', C0U5 (7)
The content is incremented by rlJ (6), and it is determined whether the content of C0U3 has reached r2710+J, that is, 10,000 times (7). In this judgment, if the number of times has reached 10,000, writing to the EEFROM 2 is finished, and if it is less than 10,000 times, the process returns to step (2).

一方、ステップ(4)で、Noの場合はステップ(2)
へ戻る。このように、EEFROM2へノ書き込みを開
始アドレス1’0OOO+JからrlFFF16Jまで
を環状に繰り返すので、書き込みをチップ全体にモ均化
することができる。
On the other hand, if No in step (4), step (2)
Return to In this way, since writing to the EEFROM 2 is repeated circularly from the start address 1'000+J to rlFFF16J, the writing can be uniformized over the entire chip.

なお、上記実施例ではメモリアクセスにおける書き込み
動作について説明したが、メモリ消去についても同様で
ある。また、上記実施例ではアドレスを高位から低位に
向って一方向に逐次指示する場合について説明したが、
低位から高位に向って一方向に逐次指示することも可能
である。
Note that although the write operation in memory access has been described in the above embodiment, the same applies to memory erasure. Furthermore, in the above embodiment, a case was explained in which addresses are sequentially specified in one direction from high to low.
It is also possible to give instructions sequentially in one direction from a low level to a high level.

また、上記実施例では外部のC0U3 、ADP4より
EEPROM2のアドレス制御を行う場合について説明
したが、EEPROM2にC0U3およびADP4を有
する場合も同様に機能する。
Further, in the above embodiment, a case has been described in which the address control of the EEPROM 2 is performed from the external C0U3 and ADP4, but the same function can be achieved when the EEPROM 2 has C0U3 and ADP4.

〔発明の効果〕〔Effect of the invention〕

以上説明したように、この発明は電気的消去可能なプロ
グラマブルリードオンリメモリの書き込みまたは消去ア
ドレスを高位から低位または低位から高位に向って一方
向に逐次指示する指示手段と、この指示手段による電気
的消去可能なプログラマブルリードオンリメモリへの−
3,を込みまたは消去回数をカウントするカウント手段
とを設けたので、メモリへのアドレス管理が可能となり
、メモリへの書き込みまたは消去回数をモ均化させて、
メモリのアクセス寿命を延命できる優れた効果を有する
As explained above, the present invention provides an instruction means for sequentially instructing write or erase addresses of an electrically erasable programmable read-only memory in one direction from high to low or from low to high, and an electrical - to erasable programmable read-only memory
3. Since a counting means for counting the number of times of writing or erasing is provided, addresses to the memory can be managed, and the number of times of writing or erasing to the memory can be equalized.
It has an excellent effect of extending the access life of memory.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図はこの発明の一実施例を示す一メモリアクセス制
御装置を説明するためのブロック図、第2図はこの発明
におけるMPUによるメモリアクセス制動作置を説明す
るフローチャートである。 図中、1はMPU、1aはROM、2はEEPROM、
3はCOU、4はADP、5はDBである。 第1図 第2図
FIG. 1 is a block diagram for explaining a memory access control device showing an embodiment of the present invention, and FIG. 2 is a flowchart for explaining a memory access braking operation by an MPU in the present invention. In the figure, 1 is MPU, 1a is ROM, 2 is EEPROM,
3 is COU, 4 is ADP, and 5 is DB. Figure 1 Figure 2

Claims (1)

【特許請求の範囲】[Claims] 電気的消去可能なプログラマブルリードオンリメモリの
書き込みまたは消去アドレスを高位から低位または低位
から高位に向って一方向に逐次指示する指示手段と、こ
の指示手段による電気的消去可能なプログラマブルリー
ドオンリメモリへの書き込みまたは消去回数をカウント
するカウント手段とを具備したことを特徴とするメモリ
アクセス制御装置。
An instruction means for sequentially instructing a write or erase address of an electrically erasable programmable read-only memory in one direction from a high level to a low level or from a low level to a high level; A memory access control device comprising: counting means for counting the number of times of writing or erasing.
JP19203185A 1985-09-02 1985-09-02 Memory access controller Expired - Lifetime JPH07109716B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19203185A JPH07109716B2 (en) 1985-09-02 1985-09-02 Memory access controller

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19203185A JPH07109716B2 (en) 1985-09-02 1985-09-02 Memory access controller

Publications (2)

Publication Number Publication Date
JPS6252796A true JPS6252796A (en) 1987-03-07
JPH07109716B2 JPH07109716B2 (en) 1995-11-22

Family

ID=16284445

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19203185A Expired - Lifetime JPH07109716B2 (en) 1985-09-02 1985-09-02 Memory access controller

Country Status (1)

Country Link
JP (1) JPH07109716B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5963474A (en) * 1998-05-11 1999-10-05 Fujitsu Limited Secondary storage device using nonvolatile semiconductor memory

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5847467U (en) * 1981-09-29 1983-03-30 トヨタ自動車株式会社 Flywheel fixing jig
JPS58215795A (en) * 1982-06-08 1983-12-15 Toshiba Corp Non-volatile memory device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5847467U (en) * 1981-09-29 1983-03-30 トヨタ自動車株式会社 Flywheel fixing jig
JPS58215795A (en) * 1982-06-08 1983-12-15 Toshiba Corp Non-volatile memory device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5963474A (en) * 1998-05-11 1999-10-05 Fujitsu Limited Secondary storage device using nonvolatile semiconductor memory

Also Published As

Publication number Publication date
JPH07109716B2 (en) 1995-11-22

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