JPS62511B2 - - Google Patents
Info
- Publication number
- JPS62511B2 JPS62511B2 JP2384478A JP2384478A JPS62511B2 JP S62511 B2 JPS62511 B2 JP S62511B2 JP 2384478 A JP2384478 A JP 2384478A JP 2384478 A JP2384478 A JP 2384478A JP S62511 B2 JPS62511 B2 JP S62511B2
- Authority
- JP
- Japan
- Prior art keywords
- voltage
- circuit
- thin film
- electrode
- write
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010409 thin film Substances 0.000 claims description 29
- 239000003990 capacitor Substances 0.000 claims description 14
- 239000011159 matrix material Substances 0.000 claims description 6
- 230000004044 response Effects 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000012423 maintenance Methods 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Landscapes
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Control Of El Displays (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2384478A JPS54116137A (en) | 1978-03-01 | 1978-03-01 | Circuit system of thin film el element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2384478A JPS54116137A (en) | 1978-03-01 | 1978-03-01 | Circuit system of thin film el element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS54116137A JPS54116137A (en) | 1979-09-10 |
| JPS62511B2 true JPS62511B2 (enrdf_load_html_response) | 1987-01-08 |
Family
ID=12121703
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2384478A Granted JPS54116137A (en) | 1978-03-01 | 1978-03-01 | Circuit system of thin film el element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54116137A (enrdf_load_html_response) |
-
1978
- 1978-03-01 JP JP2384478A patent/JPS54116137A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS54116137A (en) | 1979-09-10 |