JPS6250263B2 - - Google Patents
Info
- Publication number
- JPS6250263B2 JPS6250263B2 JP4721581A JP4721581A JPS6250263B2 JP S6250263 B2 JPS6250263 B2 JP S6250263B2 JP 4721581 A JP4721581 A JP 4721581A JP 4721581 A JP4721581 A JP 4721581A JP S6250263 B2 JPS6250263 B2 JP S6250263B2
- Authority
- JP
- Japan
- Prior art keywords
- axis
- support member
- element member
- grindstone
- holding stand
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 3
- 230000002093 peripheral effect Effects 0.000 description 4
- 239000003381 stabilizer Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000003754 machining Methods 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 239000006061 abrasive grain Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000010349 pulsation Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B5/00—Machines or devices designed for grinding surfaces of revolution on work, including those which also grind adjacent plane surfaces; Accessories therefor
- B24B5/02—Machines or devices designed for grinding surfaces of revolution on work, including those which also grind adjacent plane surfaces; Accessories therefor involving centres or chucks for holding work
- B24B5/14—Machines or devices designed for grinding surfaces of revolution on work, including those which also grind adjacent plane surfaces; Accessories therefor involving centres or chucks for holding work for grinding conical surfaces, e.g. of centres
Description
【発明の詳細な説明】 本発明は、電力素子の製造方法に関する。[Detailed description of the invention] The present invention relates to a method for manufacturing a power device.
第１図は、制御整流形の電力素子１を示してい
る。この電力素子１は、単結晶シリコンからなり
PNPN形４層構造を有する円板状の素子部材２
と、この素子部材２が同軸かつ一体的に支持され
たモリブデン又はタングステン製の円板状支持部
材３とを有している。しかして、素子部材２の４
層の境界には、それぞれPN接合J1，J2，J3が形成
されている。上記素子部材２の接合J1側端層は、
カソード層４であつて、このカソード層４にはカ
ソード電極（図示せず）が抵抗接触されている。
また、接合J3側の端層は、アノード層５であつ
て、このアノード層５は、アノード電極としての
前記支持部材３に例えばろう接により連結されて
いる。さらに、接合J2と接合J3との間には、高比
抵抗層６がアノード層５に隣接して設けられてい
る。この高比抵抗層６は、アノード層５よりも低
不純物濃度すなわち高比抵抗を呈する。また、カ
ソード層４と高比抵抗層６との間にカソード隣接
層７が設けられている。このカソード隣接層７
は、高比抵抗層６よりも高不純物濃度すなわち低
比抵抗を有し、このカソード隣接層７の表面に
は、ゲート電極（図示せず）が接続されるように
なつている。 FIG. 1 shows a power element 1 of the controlled rectification type. This power element 1 is made of single crystal silicon.
Disc-shaped element member 2 with PNPN type four-layer structure
This element member 2 has a disk-shaped support member 3 made of molybdenum or tungsten and coaxially and integrally supported. Therefore, 4 of element member 2
PN junctions J 1 , J 2 , and J 3 are formed at the layer boundaries, respectively. The joining J1 side end layer of the element member 2 is:
A cathode layer 4 has a cathode electrode (not shown) in resistive contact with the cathode layer 4 .
Further, the end layer on the side of the junction J3 is an anode layer 5, and this anode layer 5 is connected to the support member 3 as an anode electrode, for example, by soldering. Further, a high resistivity layer 6 is provided adjacent to the anode layer 5 between the junction J 2 and the junction J 3 . This high resistivity layer 6 exhibits a lower impurity concentration, that is, a higher resistivity than the anode layer 5. Further, a cathode adjacent layer 7 is provided between the cathode layer 4 and the high resistivity layer 6. This cathode adjacent layer 7
has a higher impurity concentration, that is, a lower resistivity than the high resistivity layer 6, and a gate electrode (not shown) is connected to the surface of the cathode adjacent layer 7.
ところで、素子部材２の外周部は、カソード層
４からアノード層５に向つて徐々に大径となる所
謂ベベル形の傾斜面８に形成されている。この傾
斜面８の形成は、一般に、素子部材２をその軸線
９のまわりに回転させるとともに、素子部材２の
板面に対して一定角度傾斜したノズル１０から空
気とともに高速で砥粒１１を噴射させ素子部材２
の周辺部に衝突させるホーニング方式で行つてい
る。しかるに、このような噴射加工方法では素子
部材２の外周面を再現性をもつて一定に傾斜させ
ることがむづかしく、品質が低下する欠点があ
る。すなわち、第２図に示すように、素子部材２
の周面は、マクロ的には所望の傾角（θ）に形成
できるが、砥粒１１の脈動に起因して、ミクロ的
には微細な凹凸のため曲線１２で示すように、上
記傾角（θ）よりも大きな傾角（θ′）に形成さ
れる部分もあり、このためリーク電流が増加し耐
電圧特性が低下してしまう。さらに、このような
噴射加工方は、加工能率が低いという欠点をもつ
ている。 Incidentally, the outer peripheral portion of the element member 2 is formed into a so-called bevel-shaped inclined surface 8 whose diameter gradually increases from the cathode layer 4 toward the anode layer 5. Generally, this inclined surface 8 is formed by rotating the element member 2 around its axis 9 and injecting abrasive grains 11 together with air at high speed from a nozzle 10 inclined at a certain angle with respect to the plate surface of the element member 2. Element member 2
This is done using a honing method that collides with the periphery of the object. However, such a jet machining method has the disadvantage that it is difficult to incline the outer circumferential surface of the element member 2 at a constant angle with reproducibility, resulting in a decrease in quality. That is, as shown in FIG.
The peripheral surface of can be formed at a desired inclination angle (θ) macroscopically, but due to the pulsation of the abrasive grains 11 and microscopically minute unevenness, as shown by curve 12, the inclination angle (θ ), some portions are formed at an angle of inclination (θ') larger than . Furthermore, such jet machining methods have the disadvantage of low machining efficiency.
本発明は、上述の事情に着目してなされたもの
で、電力素子の素子部材の外周部に傾斜面及び段
差部を同時的に高精度かつ高能率で形成すること
ができる電力素子の製造方法を提供することを目
的とする。 The present invention has been made in view of the above-mentioned circumstances, and is a method for manufacturing a power device that can simultaneously form an inclined surface and a stepped portion on the outer peripheral portion of an element member of a power device with high precision and high efficiency. The purpose is to provide
以下、本発明の一実施例を図面を参照して詳述
する。 Hereinafter, one embodiment of the present invention will be described in detail with reference to the drawings.
第３図は、この実施例において製造される電力
素子の円板状の素材１３を示している。この素材
１３は、第１図に示したものと同一のもので、単
結晶シリコンからなりPNPN形４層構造を有する
円板状の素子部材１４と、上記素子部材１４が同
軸かつ一体的に支持されたモリブデン又はタング
ステン製の円板状支持部材１５とを有している。
上記素子部材１４は、第４図上端から順に、カソ
ード層１６、カソード隣接層１７、高比抵抗層１
８、アノード層１９となつている。しかして、支
持部材１５は、アノード電極として例えばろう接
などによりアノード層１９に接合されている。 FIG. 3 shows a disk-shaped material 13 of the power device manufactured in this example. This material 13 is the same as that shown in FIG. 1, and includes a disk-shaped element member 14 made of single crystal silicon and having a PNPN four-layer structure, and the element member 14 coaxially and integrally supported. It has a disc-shaped support member 15 made of molybdenum or tungsten.
The element member 14 includes, in order from the top in FIG. 4, a cathode layer 16, a cathode adjacent layer 17, and a high resistivity layer
8, anode layer 19. Thus, the support member 15 is joined to the anode layer 19 as an anode electrode by, for example, soldering.
しかして、この素材１３の外周部を加工する場
合、支持部材１５側を保持台２０の取付面２０ａ
に固定する。このとき、素材１３の軸線と保持台
２０の回転軸線２１とが同軸となるように設定す
る。ついで、保持台２０を、矢印２２方向に回転
させるとともに、保持台２０に隣接して配設され
た矢印２３方向に回転駆動されている砥石２４に
向つて矢印２５ａ方向に前進させる。この砥石２
４は、一端部が円錐台状に形成された円板状のも
のであつて、円錐台状部分の母線と、砥石２４の
回転軸線２６との交差角は、角度θとなるように
設定されている。この角度θは、第３図及び第４
図に示すように、この実施例の研削方法により形
成される傾斜面２７の母線と素子部材１４の板面
とのなす角度と等しく設定されていて、例えば60
度となつている。そうして、砥石２４と保持台２
０とは、回転軸線２６と回転軸線２１とが直交す
るように配設されている。このとき、砥石２４の
最下位置は、支持部材１５の上面がのつている平
面上にあるように設定され、支持部材１５が加工
されないようになつている。かくして、保持台２
０の矢印２５ａへの前進により、素子部材１４は
砥石２４の円錐台状部分に圧接されて研削加工が
行われ、傾斜面２７が形成されるとともに、段差
部２８が形成される。しかして、第３図の破線位
置まで加工した後、保持台２０を矢印２５ｂ方向
に後退させ形成された１個の電力素子の研削加工
を終了する。しかして、傾斜面２７に例えばシリ
コン・ラバーなどの表面安定化剤２９を塗布する
（第３図参照）。 Therefore, when processing the outer peripheral part of this material 13, the support member 15 side is placed on the mounting surface 20a of the holding table 20.
Fixed to. At this time, the axis of the material 13 and the rotation axis 21 of the holding table 20 are set to be coaxial. Next, the holding table 20 is rotated in the direction of the arrow 22 and advanced in the direction of the arrow 25a toward the grindstone 24 which is disposed adjacent to the holding table 20 and is driven to rotate in the direction of the arrow 23. This whetstone 2
Reference numeral 4 has a disc shape with one end formed in the shape of a truncated cone, and the intersection angle between the generatrix of the truncated cone and the rotational axis 26 of the grindstone 24 is set to be an angle θ. ing. This angle θ is shown in Figures 3 and 4.
As shown in the figure, the angle is set to be equal to the angle between the generatrix of the inclined surface 27 formed by the grinding method of this embodiment and the plate surface of the element member 14, for example, 60
It has become a degree. Then, the grindstone 24 and the holding table 2
0 is arranged such that the rotation axis 26 and the rotation axis 21 are perpendicular to each other. At this time, the lowest position of the grindstone 24 is set so as to be on the plane on which the upper surface of the support member 15 extends, so that the support member 15 is not processed. Thus, holding base 2
0, the element member 14 is brought into pressure contact with the truncated conical portion of the grindstone 24 and ground, thereby forming the inclined surface 27 and the stepped portion 28. After processing to the position shown by the broken line in FIG. 3, the holding table 20 is moved back in the direction of the arrow 25b to complete the grinding of one power element. A surface stabilizer 29, such as silicone rubber, is then applied to the inclined surface 27 (see FIG. 3).
このように、本発明の電力素子の研削方法は、
電力素子の表面耐電圧特性を向上させるための傾
斜面及び段差部の形成を、同時的に高精度かつ高
能率で行うことができ、電力素子の品質向上に寄
与する。とりわけ、円錐台状部分を有する砥石の
回転軸線と素子部材との回転軸線とを直交させて
砥石を素子部材に圧接させるようにしているの
で、砥石の円錐台状部分の傾斜面の傾斜角により
正確に、電力素子の傾斜角を制御することができ
ることができ、加工精度の向上に役立つている。
しかも、同時に形成された支持部材と素子部材と
の間の段差部分は、後工程において塗布される傾
斜面の表面安定化剤を滞留させる役割を果たし、
この滞留した表面安定化剤の表面張力により、傾
斜面の表面安定化剤の被着量を適正量に保つこと
ができるという格別の効果を奏する。 In this way, the power device grinding method of the present invention includes:
Formation of sloped surfaces and stepped portions for improving the surface voltage withstand characteristics of power devices can be simultaneously performed with high precision and high efficiency, contributing to improvement in the quality of power devices. In particular, since the rotational axis of the grindstone having a truncated conical portion and the rotational axis of the element member are orthogonal to each other and the grinding wheel is brought into pressure contact with the element member, the angle of inclination of the inclined surface of the truncated conical portion of the grindstone The inclination angle of the power element can be precisely controlled, which helps improve processing accuracy.
Moreover, the stepped portion between the support member and the element member formed at the same time plays a role in retaining the surface stabilizer on the slope surface applied in the subsequent process.
The surface tension of this retained surface stabilizer provides a special effect in that the amount of surface stabilizer deposited on the inclined surface can be maintained at an appropriate amount.
第１図は従来の電力素子の加工方法を説明する
ための図、第２図は第１図の電力素子の切欠拡大
図、第３図は本発明の一実施例の電力素子の製造
方法により加工される素材の正面図、第４図は本
発明の一実施例の電力素子の製造方法を説明する
ための図である。
１３：素材（電力素子―）、１４：素子部材、
１５：支持部材、２１：回転軸線（第１の―）、
２０：保持台、２４：砥石、２６：回転軸線（第
２の―）、２７：傾斜面、２８：段差部。
FIG. 1 is a diagram for explaining a conventional power device processing method, FIG. 2 is an enlarged cutaway view of the power device in FIG. 1, and FIG. 3 is a diagram for explaining a conventional method for manufacturing a power device. FIG. 4, a front view of the material to be processed, is a diagram for explaining a method for manufacturing a power device according to an embodiment of the present invention. 13: Material (power element), 14: Element member,
15: Support member, 21: Rotation axis (first -),
20: Holding stand, 24: Grindstone, 26: Rotation axis (second -), 27: Inclined surface, 28: Step portion.
Claims (1)
リコンからなる素子部材及び上記素子部材を同軸
に支持する円板状の支持部材からなる電力素子素
材の上記支持部材側を第１の回転軸線のまわりに
回転駆動される保持台に上記第１の回転軸線と上
記電力素子素材の軸線とを一致させて上記保持台
に保持したのち上記保持台を回転駆動する方法
と、一端部が円錐台状に形成された円板状の砥石
をこの砥石と同軸の第２の回転軸線を上記第１の
回転軸線に直交させて上記第２の回転軸線のまわ
りに回転駆動する方法と、上記回転駆動されてい
る保持台を上記第２の回転軸線に平行な方向に相
対的に移動させ上記回転駆動されている砥石を上
記素子部材の外周部に圧接して上記支持部材の内
側まで切込ませ上記素子部材に傾斜面を形成する
とともに上記支持部材と上記素子部材との間に段
差部を形成する方法とを具備することを特徴とす
る電力素子の製造方法。1 The support member side of the power element material, which consists of an element member made of disc-shaped single crystal silicon having a PNPN four-layer structure and a disc-shaped support member coaxially supporting the element member, is the first rotation axis. The first rotational axis and the axis of the power element material are aligned with the axis of the power element material on a holding stand which is rotationally driven around the holding stand, and the holding stand is then held on the holding stand, and one end thereof is a truncated cone. A method of rotating a disk-shaped grindstone around a second rotation axis with a second rotation axis coaxial with the grindstone orthogonal to the first rotation axis; The holding stand is relatively moved in a direction parallel to the second axis of rotation, and the rotatably driven grindstone is brought into pressure contact with the outer periphery of the element member to cut into the inner side of the support member. 1. A method for manufacturing a power device, comprising: forming an inclined surface on an element member and forming a stepped portion between the support member and the element member.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4721581A JPS57163048A (en) | 1981-04-01 | 1981-04-01 | Machining method of peripheral surface of electric power element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4721581A JPS57163048A (en) | 1981-04-01 | 1981-04-01 | Machining method of peripheral surface of electric power element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57163048A JPS57163048A (en) | 1982-10-07 |
| JPS6250263B2 true JPS6250263B2 (en) | 1987-10-23 |
Family
ID=12768931
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4721581A Granted JPS57163048A (en) | 1981-04-01 | 1981-04-01 | Machining method of peripheral surface of electric power element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57163048A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6127657B2 (en) * | 2013-03-29 | 2017-05-17 | 株式会社ジェイテクト | Truing method for rotating wheel and grinding machine for carrying out the truing method |
| CN108500817A (en) * | 2018-03-29 | 2018-09-07 | 宁波鑫神泽汽车零部件有限公司 | Auto parts burnishing device |
-
1981
- 1981-04-01 JP JP4721581A patent/JPS57163048A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57163048A (en) | 1982-10-07 |
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