JPS6248903B2 - - Google Patents

Info

Publication number
JPS6248903B2
JPS6248903B2 JP54124586A JP12458679A JPS6248903B2 JP S6248903 B2 JPS6248903 B2 JP S6248903B2 JP 54124586 A JP54124586 A JP 54124586A JP 12458679 A JP12458679 A JP 12458679A JP S6248903 B2 JPS6248903 B2 JP S6248903B2
Authority
JP
Japan
Prior art keywords
temperature
semiconductor integrated
equation
resistance layer
resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54124586A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5648166A (en
Inventor
Hiroshi Gomi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP12458679A priority Critical patent/JPS5648166A/ja
Publication of JPS5648166A publication Critical patent/JPS5648166A/ja
Publication of JPS6248903B2 publication Critical patent/JPS6248903B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/209Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only resistors

Landscapes

  • Semiconductor Integrated Circuits (AREA)
JP12458679A 1979-09-27 1979-09-27 Temperature compensating circuit device in semiconductor integrated device Granted JPS5648166A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12458679A JPS5648166A (en) 1979-09-27 1979-09-27 Temperature compensating circuit device in semiconductor integrated device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12458679A JPS5648166A (en) 1979-09-27 1979-09-27 Temperature compensating circuit device in semiconductor integrated device

Publications (2)

Publication Number Publication Date
JPS5648166A JPS5648166A (en) 1981-05-01
JPS6248903B2 true JPS6248903B2 (enrdf_load_stackoverflow) 1987-10-16

Family

ID=14889126

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12458679A Granted JPS5648166A (en) 1979-09-27 1979-09-27 Temperature compensating circuit device in semiconductor integrated device

Country Status (1)

Country Link
JP (1) JPS5648166A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPS5648166A (en) 1981-05-01

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