JPS6244652A - Crystal defect analyzing device - Google Patents

Abstract

PURPOSE:To analyze a crystal defect present in a sample by providing a radiation excitation source for exciting the sample and detecting heat radiation from the sample which is excited with radiation. CONSTITUTION:The excitation source 1 uses, for example, an electromagnetic wave beam such as a microwave, light, and X rays or radiation like an electron beam or particle beam, or their combination. The radiation from the excitation source 1 is made into a beam by using a chopper 2 and a lens 3 for an exciting beam to illuminate the surface of the sample 4. The sample 4 is fixed on a moving stage 5 so as to specify a position where a crystal defect distribution is measured, analyzed, and evaluated. The heat radiation from the sample 4 is passed through an optical lens 6 for heat radiation convergence and an optical filter 7 and detected by a heat radiation electric converting device 8. An electric signal obtained from the device 8 is processed to take the analysis which eliminates contacting and destruction, reduces the size, and provides fast response, high sensitivity, vibration resistance, determination, and operativity.

Description

[Detailed description of the invention] A. Industrial application field The present invention relates to an apparatus for analyzing crystal defects in solid materials.

B0 Overview of the Invention Crystal defects are analyzed by exciting a sample to be evaluated using radiation and analyzing the generated thermal radiation. The radiation can be an electromagnetic wave, an electron beam, or a particle beam.

The crystal defect analyzer according to the present invention basically has the following features.

It consists of an excitation source for exciting a sample, a sample to be analyzed and evaluated, and a thermal radiation detection device installed away from the sample. The thermal radiation detection device includes a thermal radiation concentrator, a thermal radiation spectrometer, and a thermal radiation electrical conversion device. A feature of the present invention is that it is equipped with a thermal radiation detection device that is installed separately from the sample to be analyzed and evaluated, and there is no need to use gas as required in the prior art. There is no need to place it in close contact with the

C0 Prior Art As an example of this type of analytical device, the photoacoustic effect was discovered by Alexander Graham Bell in 1880, but its application has been suddenly reconsidered in recent years, and it is now known as a photoacoustic spectrometer. Traditionally, 5
An analytical device is being manufactured.

When light shines on a substance, the substance absorbs the light and becomes excited. The excitation energy is i) photochemical reaction,...) luminescence, m)
It returns to the ground level through non-luminous relaxation 1st class. At this time ■)
If it goes through a non-radiative relaxation process, there is no place for energy to escape, so thermal fluctuations occur within the substance. At this time, when the light is modulated, this thermal fluctuation exhibits a periodic fluctuation that depends on the modulation frequency.

Periodic pressure fluctuations occur in the gas sealed in the sample chamber,
Sound waves are generated in the gas, and strain and elastic waves are generated in the sample.

These sound waves are detected with a microphone, or the strain/elastic waves generated in the sample are detected with an acousto-electric transducer solid state device to analyze and evaluate crystal defects in the sample.

D0 Problems to be Solved by the Invention The photoacoustic spectrometer using a microphone, which is one of the prior art techniques, has the following drawbacks.

1) In order to use the microphone, the detection frequency is 1
It is limited to low frequency sound waves of about 0.7 to 2kHz. This is insufficient for measuring relaxation times from excited states in solids.

2) Since a microphone is used, vibration should be minimized)
Avoid, sou 7, need 0, further. The sample must be placed in a sealed test chamber, which poses major operational difficulties.

3) Because it uses a microphone, it cannot be used in a vacuum and therefore cannot use electron beams or particle beams as an excitation source.

Furthermore, the photoacoustic spectrometer using an acoustoelectric conversion solid-state device, which is one of the prior art techniques, has the following drawbacks.

1) Since an acoustoelectric transducer solid-state device is used, it is necessary to avoid vibration as much as possible, which poses a major operational difficulty.

2) It is necessary to bring the sample and the acoustoelectric transducer solid-state device into close contact, and there is a risk of destroying the sample.

3) The signal also depends on the shape and elastic properties of the sample,
There are major difficulties in quantitative measurement.

The purpose of the present invention is to eliminate the above-mentioned drawbacks of the prior art by providing an excitation source and a thermal radiation detection device that are located apart from the sample to be analyzed, and to achieve non-contact, non-destructive, fast response, It is an object of the present invention to provide a crystal defect analyzer having high sensitivity, small size, vibration resistance, quantitative performance, and excellent operability.

Means for Solving the D0 Problem In order to achieve the above object, the crystal defect analyzer according to the present invention includes an excitation source that generates radiation for exciting a sample to be analyzed and an excitation source that is separated from the sample. The object of the present invention is to include a thermal radiation detection device for detecting thermal radiation emitted from a sample which is provided and excited by the radiation.

The radiation can be an electromagnetic wave, an electron beam, or a particle beam, and when the sample is a semiconductor, an excited state may be created by injecting electrons or holes from a pn junction.

In an advantageous embodiment of the invention, the radiation is formed into an intensity-modulated beam, from which only a component having a predetermined energy is extracted and used. By deflecting the beam, the sample surface is scanned, and the generated thermal radiation is analyzed using a multi-element thermal radiation-electrical converter in which single-element thermal radiation detectors are arranged in one or two dimensions.

20 Effect Analysis If a sample to be evaluated has crystal defects, it is possible to analyze the crystal defects present in the sample.

G. Example FIG. 1 shows an example of the basic device configuration of the present invention. FIG. 1(a) shows an example when the sample to be analyzed and evaluated is held vertically. (b) is an example in which a sample to be analyzed and evaluated is held horizontally.

In the figure, 1 is an excitation source, 2 is a chopper, 3 is an excitation beam lens, 4 is a sample to be analyzed and evaluated, 5 is a moving stage, 6 is an optical lens for concentrating thermal radiation, and 7 is an optical lens for thermal radiation selection. It's a filter.

As excitation source 1 any radiation can be used, for example microwaves, light, electromagnetic beams such as X-rays or electron beams or particle beams, or combinations thereof. The excitation 81 may include a device for selecting a component with a particular energy from the radiation it emits, including optical, electrical, magnetic means, etc. Any means may be used as long as the energy of the excitation beam is variable.

The excitation source 1 using a light beam includes a W lamp, a halogen lamp, an Xs lamp, an Xs-Hg lamp, an Hg lamp, a D2 lamp, and an excimer (ArF, KrF, XeC).
1゜XaF etc.) laser, dye laser, nitrogen laser, Ar
Ion laser, Kr ion laser, He-Cd laser, He-Ne laser, ruby laser, semiconductor laser.

YAG laser, Nb Niglass laser, CO, laser,
Synchrotron radiation etc. are used. Of these,
A dye laser is preferred as an excitation source that is easy to narrow down to a small spot, has a continuously variable energy, and provides sufficient output, while a semiconductor laser is preferred for realizing a compact device.

In the embodiment shown in FIG. 1, radiation emitted from an excitation source 1 is interrupted by a chopper 2. In the embodiment shown in FIG. To correspond to the time interval to chop.

A signal was taken out from the electrical output terminal 9. By chopping, it is possible to increase sensitivity, reduce noise, and examine the time response of the signal at crystal defects.

The chopper 2 may be inserted into either the front or the rear of the excitation beam lens 3.

The chopping means may be optical, electrical, mechanical, or the like. In crystal defect analyzers using conventional microphones or acoustoelectric transducer solid-state devices, the use of mechanical choppers was avoided as much as possible, but the device of the present invention is resistant to vibration and has good sensitivity even when using mechanical choppers. A signal was detected. Furthermore, the chopper does not necessarily need to completely turn on and off the excitation source, but only needs to be able to modulate the intensity.

In the embodiment shown in FIG. 1, radiation emitted from an excitation source 1 is converted into a beam using an excitation beam lens 3, which is an optical lens or an electric (electrostatic, magnetostatic) lens, and focused onto the sample surface. It was irradiated with An optical bell may be used instead of an optical lens.By forming the beam in this way, a crystal defect analyzer with good spatial resolution and sensitivity can be obtained.

The sample to be analyzed and evaluated was fixed on a moving stage in order to measure crystal defect distribution and specify the position for analysis and evaluation. The sample may be fixed in any direction, vertically, horizontally, or diagonally, as shown in FIGS. 1(a) and 1(b).

The thermal radiation concentrator is for efficiently condensing thermal radiation from a sample, and in the embodiment shown in FIG. 1, an optical lens 6 for concentrating thermal radiation is used. Examples of materials for this optical lens include glass, crystalline quartz, fused silica, SL, Ge,
BaF, MgF, ZnS, Zn5a.

CdTe, sapphire, LiF, diamond, N
aC1tCdS, GaA,s, AgC1,KCI,
, KBr, AgBr, KH2-5, CsBr.

A Cs technique or the like can be used, and is selected depending on the wavelength range of the thermal radiation to be detected. In order to focus thermal radiation from materials near room temperature, the embodiment shown in FIG. 1 uses a Ge lens with an anti-reflection coating.

A thermal radiation spectrometer is a device that selects thermal radiation in a wavelength range necessary for analysis and evaluation. By detecting thermal radiation of a specific wavelength, it is possible to evaluate not only crystal defects but also, for example, free carrier concentration, impurity concentration, etc. in a semiconductor. Also, thermal emission spectroscopy equipment.

It is also necessary to block the excitation beam. The thermal radiation spectrometer is composed of optical filters such as a five-color glass filter, an interference filter, and a reflection filter, a prism spectrometer, a diffraction grating spectrometer, a Fourier transform interference spectrometer, and the like. In the embodiment shown in FIG. 1, an optical filter for selecting thermal radiation was used.

The thermal radiation electrical conversion device 8 is for converting thermal radiation energy into an electrical signal, and includes a thermistor, bolometer, thermopile, Golay cell, pyroelectric element, semiconductor element (photoconductive type, photovoltaic type, 5hottoky type, etc.). , photomultiplier tube, etc., and are selected depending on the wavelength range of the thermal radiation to be detected.

Among these, semiconductor elements and pyroelectric elements are preferable as thermal radiation electrical conversion devices for thermal radiation near room temperature. Semiconductor elements are superior to pyroelectric elements in terms of sensitivity and response speed, but need to be cooled with liquid N2j, liquid He, or the like. As materials for semiconductor devices, for example, PbS,
Pb5a, InSb.

Hg-Cd Te, Pb1-X5nXTs, Gex x and Si added with impurities, etc. can be used. Examples of materials for the pyroelectric element include LiTa0. , LiNb0. , P
bTi0. .

P, ZT, TGS, PVF, etc. can be used.

The thermal radiation electrical conversion device is a single element, but as shown in the examples later, it may be a device that combines a multi-array element in which single elements are arranged in one or two dimensions and a solid-state electronic scanning element, or a device that combines a solid-state electronic scanning element. If an electronic vidicon or the like is used, it is possible to construct a device that can obtain thermal radiation spectra or thermal radiation images at high speed.

2 to 5 show embodiments of the thermal radiation condensing device other than the embodiment shown in FIG. 1. - In Figure 2, two pieces are used to reduce the influence of aberrations.)
3 shows an example in which a curved mirror 10 is used, and FIG. 4 shows an example in which a Cassegrain-type reflective objective mirror 11 is used in combination with two types of mirrors.
FIG. 5 shows an embodiment using an optical fiber 2. In FIG. 3, it is preferable that the angle between the axis of the curved mirror 10 and the input optical axis and the output optical axis is not too large, and is in the range of 10@ to 15
A value within @ is appropriate. The materials for the mirror surface deposits are:
For example, Al.

Ag, Au, Cu, Rh, etc. can be used,
A protective film coating may be applied.

Using a lens simplifies the configuration of the condensing device, but if the chromatic aberration of the lens is a particular problem, the lens configuration for an achromatic lens (doublet, triplet, etc.) becomes complicated, so using a mirror is recommended. It is preferable to configure a light condensing device.

As in the embodiment shown in FIG. 5, the optical fiber 12 was used to construct a remote measuring device in which the sample and the thermal radiation-electric conversion device 8 were separated. As the material of the optical fiber 12 in FIG. 5, for example, quartz, heavy metal oxide glass (Gem glass, etc.), chalcogen glass (AsGaSeTe glass, Gas glass, etc.), halide glass, halide crystal, etc. can be used. , is selected depending on the thermal radiation wavelength range to be detected.

Also, the thermal radiation concentrators shown in FIGS. 1 to 5 can be used in combination.

6 to 8 show embodiments of parts of the thermal emission spectrometer other than the embodiments shown in FIGS. 1 to 5.

FIG. 6 shows an embodiment in which thermal radiation is guided to a spectrometer 14 using a Cassegrain-type reflective objective mirror 11 and a plane mirror 13, separated into spectra, and detected by a single-element thermal radiation-electrical converter 8. For example, a prism type spectrometer, a diffraction grating type spectrometer, etc. can be used as the spectrometer.

FIG. 7 shows a multi-array element thermal radiation electric converter 15 and a solid-state electronic scanning element 16 in which single elements are arranged one-dimensionally instead of the single element in the embodiment shown in FIG. 6, and their driving. This is an example in which a thermal emission spectrum from a sample was measured at a higher speed using the apparatus 17. The multi-array element heat radiation electric converter 15 in the figure is made of photoconductive HgCdTe.
A multi-array element in which 200 infrared detection elements were arranged in one dimension was used. In addition, for example, InSb, Ge,
Si, PbS.

Multi-array elements such as Pb5a can also be used.

FIG. 8 shows an example in which a Fourier transform spectrometer 18 (manufactured by JEOL Ltd., JIR-100) is used as a thermal radiation spectrometer. With the device of this example, the wave number range is 400 to 4000.
Thermal emission spectra of the excitation beam irradiation part at as-' could be measured at high speed. In the figure, 19 is a Fourier transform spectrometer computer, 20 is a CRT, 21 is a plotter, and 22 is a disk drive.

23 is a moving stage control device.

9 to 11 show embodiments of excitation sources other than the embodiment shown in FIG. 1.

Figure 9 shows an example in which the excitation source is placed opposite the thermal radiation detection device across the sample, and Figure 10 shows an example in which the excitation source is transparent to thermal radiation and has a high reflectance to the excitation beam. This is an example in which the optical axes of thermal radiation light are aligned using the dichroic optical filter 24 shown in FIG.

Figure 11 shows an example in which a semiconductor laser 25 is used as the excitation source. A laser was used.

Also, InGaAsP/InP system, InAsP system.

InGaP/InP system, InGaP1GaAs system, AI
GaAsPl GaAs-based, AlGaInAs/In
Using a P-based semiconductor laser as an excitation source, it was possible to analyze and evaluate not only GaAs samples but also Si and InP samples. In the figure, 24 is a dichroic filter that transmits thermal radiation and has a high reflectance for excitation light, 26 is a semiconductor laser driver, 27 is a lock-in amplifier, and 28 is a boxcar integrator. , 29 is a preamplifier.

As shown in FIG. 11, by using a semiconductor laser as an excitation source, it is possible to downsize the crystal defect analyzer.
Furthermore, modulation of the excitation light can be achieved by directly modulating the semiconductor laser driving device, eliminating the need for a chopper.

FIGS. 12 and 13 show an embodiment of a crystal defect spatial distribution measuring device other than the embodiment shown in FIG. 1.

A thermal radiation image is obtained above. Deflection of the excitation beam may be performed mechanically, optically, electrically, magnetically, or by any combination thereof. As the laser beam deflector, for example, a galvanometer, a polygon mirror, an acousto-optic device, an electro-optic device, etc. can be used. In the figure,
31 indicates a CRT control device.

Also, as in the example shown in Figure @13, SL,
Semiconductor such as PbS, Pb5e, or TGS, 1i
Ta0. .

PbTi0. If a device is used that combines a multi-array element 32 in which single pyroelectric elements such as PVF2 are arranged in one or two dimensions, and an electron scanning device 33 such as scanning by an electron beam or a charge-coupled device, the sample can be scanned at higher speed. The crystal defect distribution of can be evaluated.

In the embodiment shown in FIG. 1, the excitation sources 1 to 1 are beam-shaped by the radiating radiation lens 3 to form a small spot on the sample surface. The moving stage 5 is mechanically moved and the stationary beam spot scans the sample surface. In prior art crystal defect analyzers using microphones or acoustoelectric transducer solid-state devices, mechanical scanning was not preferred because vibrations must be avoided as much as possible.

Since the device according to the invention is vibration resistant, simple mechanical scanning can be used effectively.

The deflector 30 in the embodiment shown in FIG. 12, the multi-array element 32 in the embodiment shown in FIG. 13, and the scanning in the embodiment shown in FIG. 1 can be used together.

FIG. 14 differs from the embodiment shown in FIG.

Sample 4 to analyze and evaluate chopper 2' and Cassegrain-type reflective objective, which is a thermal radiation concentrator! Even with the device of this embodiment, which shows the embodiment inserted between 11 and 11, high sensitivity measurement is possible in combination with the preamplifier 29 and the lock-in amplifier 27. The chopper 2' may be placed between the reflecting objective 11 and the optical filter 7 or between the optical filter 7 and the thermal radiation-electrical conversion device 8.

FIG. 15 shows the chopper 2 and the 14th embodiment of the embodiment shown in FIG.
An embodiment is shown in which the chopper 2' of the embodiment shown in the figure is combined. Set the intermittent frequency f2 of chopper 2 to the intermittent frequency f,,f,' of chopper 2' (normally +fz>f2'), and independently perform synchronous detection with a lock-in amplifier to correspond to f2. Information about crystal defects was obtained from the signals, and information about low-frequency temperature changes in the sample was obtained from the signals corresponding to f and l.

FIG. 16 shows an embodiment in which not only the thermal radiation from the sample is detected but also the photoluminescence and visible light image of the excitation beam irradiation area are simultaneously measured. In the figure, 24 is a dichroic filter that is transparent to thermal radiation and highly reflective to visible light, 35 is an optical beam splitter that switches between visible light image observation and photoluminescence AM, and 36 is visible light. An image light source, 37 an optical filter for blocking excitation light, 38 a photoluminescence detector, and 39 a visible light imaging device or an eyepiece for naked eye observation.

In the case of semiconductor materials, photoluminescence is complementary to the thermal radiation signal obtained with the device of the invention, and it is important that it can be measured and compared simultaneously.

The visible light image w4 detector can be used to specify the position on the sample to be analyzed and evaluated and to align the optical axis of the excitation beam.

FIG. 17 shows the samples used for the analysis and evaluation of defects in GaAs crystals.
An example of a crystal defect analyzer according to the present invention will be shown.

As an excitation source for the sample 4 to be analyzed and evaluated, a dye laser 41 excited by a Kr ion laser 40 with an oscillation wavelength of 676.4 nm, 647.1 n+++, and an output of about 5111 was used. As the dye, a cyanine dye commonly called HITC was dissolved in dimethyl sulfoxide as a solvent, and ethylene glycol was added to the solution. The oscillation wavelength range of the dye laser is 850 nm to 920 nn+, and the peak output is about 80111111. The laser beam from the dye laser is passed through an optical filter 4 for blocking Kr ion laser light.
2, the mechanical chopper 2 converts the light into an intermittent light of approximately 300 Hz, which passes through the optical beam splitter 43 and is applied onto the sample surface by the plane fi 13 and the lens 3 to a diameter of approximately 2 Hz.
The spot was narrowed down to 00 μm. Thermal radiation generated at the excitation point of the sample is collected by the Cassegrain reflective objective 11 of the thermal radiation collector, passes through the Ge filter 24 which is a dichroic optical filter, and is converted into light by the thermal radiation electrical converter 8. Conduction type Hg0.8Cd, 2Te infrared detector (NewEngl
and Research Center, MPC
11-2-AD 1 ) was converted into an electrical signal. H
Optical/thermal radiation signal detected by gCdTe infrared detector (
Hereinafter, this signal will be referred to as a PTR signal in this specification. ) was passed through a preamplifier 29 with a gain of 60 dB, synchronously detected by a lock-in amplifier 27, and input to the computer 19.

After the reflected light from the optical beam splitter 43 is converted into an electrical signal by the Si photodiode 44.

Synchronous detection is performed by the lock-in amplifier 27, and the computer 1
9 and used for light source intensity correction of the PTR signal.

The PTR spectrum (PTR signal vs. excitation light energy) is
This can be obtained by measuring the PTR signal without changing the oscillation wavelength of the dye laser 41. The PTR image can be obtained by measuring the PTR signal while moving the sample 4 using the moving stage 5. The PTR spectrum and PTR image are C
RT20 or plotter 21.

The energy levels formed by crystal defects can be seen from the PTR spectrum, and the spatial distribution of crystal defects can be seen from the PTR image.

Furthermore, the apparatus of this embodiment can also measure photoluminescence images, and information complementary to PTR images can also be obtained at the same time. As an excitation source for photoluminescence measurement, the oscillation wavelength is 6.
A Kr ion laser of 76.4.647.1 nm was used. Furthermore, if a boxcar integrator is used in place of the lock-in amplifier in this embodiment, the pulse response of crystal defects can also be measured.

The samples used in this example are Si-doped n-type GaAs wafers having various etch pit densities (EPDs), that is, crystal defect density. Table 1 shows the characteristics of the GaAs wafers used for analysis and evaluation.

18 to 25 show PTR spectra after light source intensity correction of GaAs wafers having different etch pit densities ([EPD), that is, crystal defect densities, measured by the apparatus of this example. Eg indicates a wavelength (864 nm) corresponding to the energy gap of GaAs at room temperature (~21°C). Figure 18 to 2
As is clear from Figure 5, GaAs with a large EPD
The PTR spectrum of has a peak near 895nl11, and this peak is present. The half width of this PTR peak is approximately 20 nm.

FIG. 26 shows a PTR image of a GaAs wafer measured using excitation light having a wavelength at which a PTR peak was observed. The shading of this PTR image indicates the intensity of the PTR signal, which is a photoluminescence image of the surface, and similarly, black areas have strong signals.

It can be seen from FIGS. 26 and 27 that the PTR image and the photoluminescence image have a complementary relationship. 26th
The displays shown in the figures and FIG. 27 can of course be displayed in color, and by using color display, the distribution of crystal defects can be more clearly seen.

Similarly, in FIG. 28, measurement was performed using excitation light of the wavelength at which the PTR peak was observed. PT of another GaAs wafer
An R image is shown. In FIG. 29, it can be seen that the distribution is not lopsided on the surface of the same sample, but is uniform. Note that using the apparatus of this example, EPD of a GaAs wafer was performed at 5 x 1
When performing quantitative measurements in the range of 0" to 1 x 10'cm""2, the irradiation spot diameter of the excitation light beam should be set to about 1
It is desirable to set the diameter to around m1, and in order to measure the microscopic spatial distribution of crystal defects, it is desirable to narrow down the spot diameter of the excitation beam to around 1μ layer.

It is desirable that the irradiation power of the excitation beam is sufficiently large without damaging the sample, and in this example it is approximately 10 mw.
A range from about 300 ml to about 300 ml was used.

By using a dye laser as an excitation source using a dye commonly known as IR-140 instead of a dye commonly known as HITC, not only GaAs (InP and Si, etc.) could also be analyzed and evaluated.

Furthermore, instead of the dye laser of this embodiment, a G laser oscillating at about 895 nm, as in the embodiment shown in FIG.
Using an aAlAs/GaAs semiconductor laser, we were able to construct a compact GaAs crystal defect analyzer.

FIG. 30 shows an embodiment using an electron beam as an excitation source. In this embodiment, a scanning electron microscope 45 (
A modified version of JSM-253 (manufactured by JEOL Ltd.) was used.

Thermal radiation emitted from the electron beam irradiation area is collected by a curved mirror 46 with a hole for the electron beam to pass through, and as shown in the embodiment of FIG. The heat radiation is guided to the electrical conversion device 8. Furthermore, a cathodoluminescence image can also be measured at the same time by using the reflected light from the dichroic optical filter 24. For the cathodoluminescence detection element 49.

In the figure, 47 is a beam blanking device, and 48 is a signal generator, which uses an electron multiplier tube or the like. In this embodiment, the excitation beam can be narrowed down to a very small size, so that any device can be used as long as the present invention is equipped with a means for converting the thermal radiation changes shown in FIGS. 1 to 34 into electrical signal changes. It may be.

For example, the excitation means may be electromagnetic waves, electrons, or particles, or when the sample is a semiconductor, an excited state may be created by injecting electrons or holes from a pn junction.

As the heat radiation electrical conversion means, heterodyne detection using a high speed heat radiation detection element or the like may be used.

H0 Effects of the Invention The crystal defect analyzer of the present invention provides unprecedented non-contact, non-destructive properties, high-speed response, high sensitivity, small size, vibration resistance, quantitative performance, and operability. Therefore, its industrial value is extremely high6

[Brief explanation of drawings]

FIG. 1 is a diagram showing an embodiment of the basic device of the present invention, FIGS. 2 to 5 are diagrams showing an embodiment of the thermal radiation concentrator portion of the device shown in FIG. 1, and FIG. 8 shows an embodiment of the thermal emission spectrometer part of the apparatus shown in FIG. 1, and FIGS. 9 and 10 show an example of the excitation source part of the apparatus shown in FIG. 1. , Fig. 11 shows an embodiment using a semiconductor laser as an excitation source, Fig. 12 shows an embodiment using an excitation beam deflector, and Fig. 13 shows an embodiment using a multi-array element in a thermal radiation electric converter. 14 and 15 are diagrams showing an example of chopper insertion, FIG. 16 is a diagram showing an example in which a simultaneous observation device for photoluminescence and visible light images is provided, and FIG. The figure is used for crystal defect analysis on GaAs wafers) □Yo. Oh,. □, @18@
7! It1. □2. . 26 to 29 are diagrams showing examples of energy level distributions of various crystal defects obtained with the apparatus shown in FIG. 17.
The figures up to this figure are diagrams showing examples of the spatial distribution of various crystal defects obtained with the apparatus shown in FIG. 17, and FIG. 30 is a diagram showing an example in which an electron beam is used as an excitation source. 1...Excitation source, 2.2'...Chopper, 3...Excitation beam lens, 4...
Sample to be analyzed and evaluated, 5...Movement stage, 6...Optical lens. 7... Optical filter, 8... Heat radiation electrical conversion device. 9... Electrical output terminal, 10... Curved mirror, 11... Cassegrain type reflective objective mirror, 12...
...Optical fiber. 13... Plane mirror, 14... Spectrometer, 1
5...One-dimensional multi-array element, 16... Solid-state electronic scanning element, 17... One-dimensional multi-array element drive device, 18... Fourier transform type Spectrometer, 19
... Computer, 20 ... CRT,
21... Plotter, 22... Disk drive, 23... Moving stage control device, 2
4...Dichroic optical filter, 25...
semiconductor laser. 26... Drive device for semiconductor laser, 27...
... Lock-in amplifier, 28 ... Boxcar integrator. 29...Preamplifier, 30...Deflector, 31...CRT control device, 32...
Multi-array element, 33...Electronic scanning device, 34...
・・・・Drive device for multiple array elements. 35...Movable optical beam splitter, 36.
. . . Light source for visible light images, 37 . . . Optical filter for blocking excitation light, 38 . . Photoluminescence detector. 39...Visible light imaging device or eyepiece for naked eye observation, 40...Kr ion laser, 41.
... Dye laser, 42 ... Optical filter for blocking Kr ion laser light, 43 ... Optical beam splitter, 44 ... Si photodiode, 45 ... ...scanning electron microscope, 46...
・Perforated curved mirror, 47... Beam blanking device, 48... Signal generator, 49...
Cathodoluminescence detector.

Claims (21)

[Claims] (1) (a) an excitation source that generates radiation for exciting a sample to be analyzed; and (b) thermal radiation emitted from the sample, which is provided at a distance from the sample and is excited by the radiation; A crystal defect analysis device comprising a thermal radiation detection device for detecting. (2) The crystal defect analysis apparatus according to claim 1, further comprising a device that extracts only a component having a predetermined energy from the radiation emitted from the excitation source. (3) The crystal defect analysis apparatus according to any one of claims 1 and 2, further comprising means for converting the radiation emitted from the excitation source into a beam shape. (4) Crystal defect analysis according to any one of claims 1 to 3, further comprising a device that modulates the intensity of radiation emitted from the excitation source. Device. (5) The crystal defect analysis apparatus according to claim 3, characterized in that the radiation beam formed in the form of a beam is deflected to scan the sample surface. (6) The crystal defect analysis apparatus according to claim 5, wherein the scanning of the sample is performed mechanically. (7) The crystal defect analysis apparatus according to any one of claims 1 to 6, further comprising a device for concentrating thermal radiation from the sample. (8) Claim 1, characterized by comprising a device for selecting thermal radiation in a specific wavelength range emitted from the sample or a device for spectrally dispersing the thermal radiation from the sample.
The crystal defect analyzer according to any one of Items 7 to 7. (9) The crystal defect analysis apparatus according to any one of claims 1 to 8, characterized in that thermal radiation from the sample is intensity-modulated. (10) Any one of claims 1 to 9, characterized in that a light source with a wavelength corresponding to an energy level formed by crystal defects in the sample is used as the excitation source. The crystal defect analyzer described in . (11) Claims 1 to 1, characterized in that the excitation source is a dye laser or a semiconductor laser.
The crystal defect analyzer according to any one of items 0 to 0. (12) Claims 1 to 1 further include an apparatus for obtaining a visible light image of the sample.
The crystal defect analyzer according to any one of items 1 to 1 above. (13) The crystal defect analysis device according to any one of claims 1 to 12, characterized by comprising a device for measuring photoluminescence of the sample. (14) The thermal radiation detection device includes one single-element thermal radiation detector.
14. A crystal defect analysis device according to any one of claims 1 to 13, characterized in that it is a multi-array element thermal radiation electrical conversion device arranged in one dimension or two dimensions. (15) The crystal defect analysis device according to claim 8, wherein the specific wavelength range is 8 to 13 μm. (16) Hg whose thermal radiation detection device was cooled with liquid N_2
＿0＿． _8Cd_0_. The crystal defect analysis device according to any one of claims 1 to 15, characterized in that it is a _2Te infrared detector. (17) The energy level has a wavelength of approximately 885 nm to 905 nm.
Claim 1, characterized in that it corresponds to nm.
Crystal defect analyzer according to item 0. (18) The excitation irradiation spot diameter is approximately 1 μm to 1 mm.
A crystal defect analysis device according to any one of claims 1 to 17, characterized in that: (19) The irradiation output of the excitation source is about 10 mw to 300 m
The crystal defect analysis device according to any one of claims 1 to 18, characterized in that: w. (20) Claim 11, wherein the excitation source is a GaAlAs/GaAs semiconductor laser.
The crystal defect analysis device described in Section 1. (21) The crystal defect analysis device according to any one of claims 1 to 20, further comprising a device that displays crystal defect distribution in color.