JPS6244592A - High-speed electrolytic sliver plating method - Google Patents

High-speed electrolytic sliver plating method

Info

Publication number
JPS6244592A
JPS6244592A JP18259985A JP18259985A JPS6244592A JP S6244592 A JPS6244592 A JP S6244592A JP 18259985 A JP18259985 A JP 18259985A JP 18259985 A JP18259985 A JP 18259985A JP S6244592 A JPS6244592 A JP S6244592A
Authority
JP
Japan
Prior art keywords
silver
pulse
plating
electrolysis
compd
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18259985A
Other languages
Japanese (ja)
Inventor
Kenji Hara
賢治 原
Hisayuki Kazu
加朱 久幸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Yaskawa Electric Corp
Original Assignee
Yaskawa Electric Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Yaskawa Electric Manufacturing Co Ltd filed Critical Yaskawa Electric Manufacturing Co Ltd
Priority to JP18259985A priority Critical patent/JPS6244592A/en
Publication of JPS6244592A publication Critical patent/JPS6244592A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To form a smooth and thick silver plating film in a short period by using a plating liquid which is specified in silver soncn. and does not contain cyan compd. except silver cyan compd. and using DC current regulated in frequency and pulse ratio to make electrolysis. CONSTITUTION:The silver plating liquid which has 40-80g/l silver concn. and does not contain the cyan compd. except the silver cyan compd. is prepd. the electrolytic treatment is executed by using such plating bath and using the pulse current regulated to 50-5,000ms frequency of DC pulse and 0.5-0.9 range of the ratio of the DC current pulse occupying in the repeating period. The diffusion of the silver ions to the electrode surface takes place in the quiescent time of the pulse according to such pulse electrolysis. As a result, the silver ion concn. is restored near the material to be plated. The generation of gaseous hydrogen is consequently suppressed and the generation of dendrite is made hard. The silver plating having the excellent surface characteristic is thus formed.

Description

【発明の詳細な説明】 〔産業上の利用分野] この発明は、電c継電器の接点や摺動子、ブスバー等の
電気的接触部や装飾品の表面に平滑で厚い恨メッキ被膜
を短時間で形成する高速度電解恨めつき方法に関する。
[Detailed Description of the Invention] [Industrial Application Field] The present invention is capable of forming a smooth and thick plating film on the surfaces of electrical contact parts such as contacts, sliders, busbars, etc. of electric relays and decorative items in a short period of time. Regarding the high-speed electrolytic grudge formation method.

〔従来の技術〕[Conventional technology]

高速度電解銀めっきにおける電解反応は、通常直流電流
を用いて行われる。その直流電流は、lO〜100A/
dm2程度の電流密度で通電され、最大100μmの厚
みまでのめっきが行われている。
The electrolytic reaction in high-speed electrolytic silver plating is usually performed using direct current. The direct current is lO~100A/
Electricity is applied at a current density of approximately dm2, and plating is performed to a maximum thickness of 100 μm.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

このような従来の直流電流を用いた恨めつきにおいて、
めっき速度を上げるために電流密度を高くすると、被め
っき物表面における銀イオンンW度の低下が著しくなり
、水素ガスの発生が起きる。
In such conventional grudges using direct current,
When the current density is increased in order to increase the plating speed, the degree of silver ion concentration on the surface of the object to be plated decreases significantly, and hydrogen gas is generated.

この水素ガスの発生により、被めっき物表面近傍の拡散
層が乱されて、デンドライトが析出するようになる。こ
のデンドライトの析出は、膜厚が数工0μm程度ではそ
れほど目立たないが、膜厚が100μmを越えるような
場合には顕著となり、表面性状の劣下をもたらす原因と
なる。このため、平滑で厚い恨めつき被膜を得ようとす
る場合には、低電流密度で長時間の電解が必要とされて
いた。
This generation of hydrogen gas disturbs the diffusion layer near the surface of the object to be plated, causing dendrites to precipitate. This dendrite precipitation is not so noticeable when the film thickness is about 0 μm, but becomes noticeable when the film thickness exceeds 100 μm, causing deterioration of the surface quality. Therefore, in order to obtain a smooth and thick coating, electrolysis is required at low current density and for a long time.

本発明は、このような問題点に鑑み、膜厚が100μm
を越えるような厚い恨めつき被膜を形成する場合にあっ
ても、表面性状が優れた破膜を高TJ、流密度の電解に
よって短時間で得ることを目的とする。
In view of these problems, the present invention provides a film with a thickness of 100 μm.
To obtain a ruptured film with excellent surface properties in a short time by electrolysis at a high TJ and flow density, even when forming a thick resistant film that exceeds 100 mL.

〔問題点を解決するための手段〕〕 本発明は、その目的を達成するために、銀濃度が40〜
80g/lで銀シアン化物以外のシアン化合物を含まな
い銀めっき浴を使用して、直流パルスの周波数が50〜
5000msの範囲にあり且つ繰り返し周期に占める直
流電流パルスの比率が0.5〜0.9の範囲にあるパル
ス電流を用いて電解するものである。
[Means for Solving the Problems]] In order to achieve the object, the present invention has a silver concentration of 40 to 40.
Using a silver plating bath containing no cyanide other than silver cyanide at 80 g/l, the frequency of the DC pulse is 50 ~
Electrolysis is carried out using a pulse current having a duration of 5000 ms and a ratio of DC current pulses to the repetition period of 0.5 to 0.9.

この場合の電解電流密度の値は、めっき浴中の銀濃度、
めっき浴の浴温および流速度に比例して大きくすること
ができる。逆に、銀濃度、浴温か低く、めっき液の流れ
が遅い場合には、小さくする必要がある。ところで、本
発明にあっては、通電するめっき電流を制御されたパル
スとすることにより、弐filで特定される平均陰極電
流密度(?)がlO〜150 A/dm2の範囲でめっ
き被膜を平滑化する効果が認められる。
The value of electrolytic current density in this case is the silver concentration in the plating bath,
It can be increased in proportion to the bath temperature and flow rate of the plating bath. On the other hand, if the silver concentration and bath temperature are low and the plating solution flows slowly, it is necessary to reduce the value. By the way, in the present invention, by making the applied plating current a controlled pulse, the plating film can be smoothed within the range of 10 to 150 A/dm2 with an average cathode current density (?) specified by 2fil. The effect of increasing

I=ヱ、× t/θ ・−一−−−−−−・−−−−・
−(1)但し、ip:パルス電流密度、θ:パルス繰返
し周期、t :電流パルスの幅 本発明における各種の電解条件は、次のような意義をも
つ。
I=ヱ, × t/θ ・−1−−−−−−・−−−−・
-(1) However, ip: pulse current density, θ: pulse repetition period, t: width of current pulse The various electrolytic conditions in the present invention have the following meanings.

パルス繰り返し周期が50m5よりも短い場合及び5S
よりも長い場合には、めっき被膜を平滑化する効果が認
めらず、デンドライトの発生をみる。
When the pulse repetition period is shorter than 50m5 and 5S
If the length is longer than , the effect of smoothing the plating film will not be observed and dendrites will occur.

このことより、パルス繰り返し周期は、50ma〜5S
が適当である。
From this, the pulse repetition period is 50ma to 5S.
is appropriate.

次に、パルス繰り返し周期に占める直流パルスの比率(
パルス繰り返し周期に占める電流パルスの幅の比率=パ
ルス電流の輻/パルス繰り返し周期)が0.5よりも小
さくなると、めっき速度(平均電流密度)が同じであれ
ば、大きなパルス電流が必要となる。このため、デンド
ライトの生成が著しくなる。これを防ぐためにパルス電
流をさげようとすると、平均電流密度も小さくなり、め
っき速度が低下してしまう。他方、パルス繰り返し周期
に占める直流電流パルスの比率が0.9よりも大きくな
ると、直流電解と同等のめっき被膜しか得られないよう
になる。以上のことから、パルス電流の比率は0.5〜
0.9が適当である。
Next, the ratio of DC pulses to the pulse repetition period (
When the ratio of the width of the current pulse to the pulse repetition period = pulse current radius / pulse repetition period) becomes smaller than 0.5, a large pulse current is required if the plating speed (average current density) is the same. . For this reason, the formation of dendrites becomes significant. If an attempt is made to reduce the pulse current to prevent this, the average current density will also become smaller and the plating speed will decrease. On the other hand, if the ratio of DC current pulses to the pulse repetition period is greater than 0.9, only a plating film equivalent to that obtained by DC electrolysis can be obtained. From the above, the ratio of pulse current is 0.5~
0.9 is appropriate.

更に、本発明のパルス電解条件でめっきする場合のめっ
き浴は、高電流密度で操業できるように恨シアン化物以
外のシアン化合物を含まない低シアンめっき浴であるこ
とが必要である。浴中の銀濃度は40〜80g/ j!
が適当である。銀濃度が40g71未満ではめっき表面
があらくなるため電流密度を上げることができず、80
g/ 1以上ではめっき浴からの銀成分の汲み出しが多
くなることから、経済的に不利となる。
Furthermore, the plating bath used for plating under the pulsed electrolysis conditions of the present invention needs to be a low cyanide plating bath that does not contain any cyanide compounds other than anticyanide so that it can be operated at high current density. The silver concentration in the bath is 40-80 g/j!
is appropriate. If the silver concentration is less than 40g71, the plating surface becomes rough and the current density cannot be increased.
If g/1 or more, a large amount of silver component is pumped out from the plating bath, which is economically disadvantageous.

〔作用〕[Effect]

直流電流を断続的に印加するパルス電解を行うと、パル
スの休止時間に電極面への銀イオンの拡散が起こる。そ
の結果、被めっき物の近傍では恨イオン濃度が回復する
。このため、水素ガス発生が抑えられ、デンドライトが
生成しにくくなる。
When pulse electrolysis is performed in which direct current is applied intermittently, silver ions diffuse to the electrode surface during pulse rest periods. As a result, the concentration of negative ions is restored in the vicinity of the object to be plated. Therefore, hydrogen gas generation is suppressed and dendrites are less likely to be generated.

デンドライトの析出を抑えるためのパルス電解の条件は
、めっき金属の種類によってことなるが、銀めっきの場
合には直流パルスの繰り返し周期が5Qms〜5sで、
繰り返し周期に占めるパルス電流の通電時間の比率が0
.5〜0.9の範囲にあるパルス電解条件が、デンドラ
イトの生成を抑えるうえで最も効果が大きい。
The conditions for pulse electrolysis to suppress dendrite precipitation vary depending on the type of plating metal, but in the case of silver plating, the repetition period of DC pulses is 5Qms to 5s;
The ratio of pulse current energization time to the repetition period is 0
.. Pulse electrolysis conditions in the range of 5 to 0.9 are most effective in suppressing dendrite formation.

このような条件でパルス電解を行うことにより、膜厚が
1.5mmと厚くなっても平滑な須めっき被膜が得られ
る。
By performing pulse electrolysis under such conditions, a smooth base plating film can be obtained even if the film thickness is as thick as 1.5 mm.

〔実施例〕〔Example〕

次いで、実施例により本発明の特徴を具体的に説明する
Next, the features of the present invention will be specifically explained with reference to Examples.

一実施例1− 銀シアン化カリウムを銀濃度に換算して80g/ l 
Example 1 - Potassium silver cyanide converted to silver concentration of 80 g/l
.

くえん酸カリウム100g/L はう酸30g/ e 
、亜セレン酸をセレン濃度に換算して2g/lを含む水
溶液をpH8に調整したものを、めっき液とした。
Potassium citrate 100g/L Hydrolic acid 30g/e
An aqueous solution containing 2 g/l of selenite in terms of selenium concentration was adjusted to pH 8 and used as a plating solution.

陰極に銅板、陽極にptめっきTi板を用い、浴fj1
10℃のめっき液をノズルから陰極に向けて噴出させな
がら、パルス電解によるめっきを行った。このときのパ
ルス印加条件は、パルス繰り返し周期が50ma〜5s
、0mミル5s、パルス0,9.平均陰極電流密度が1
0OA/dm”と15OA/dm”であった。また、比
較のために電流密度100A/dm” ’と15OA/
dm”で直流電解を行った。通電量は、1700C/c
mzとした。このとき得られた恨めつき被膜の厚みは、
1.2〜1 、5 mmの範囲であった。この電解によ
って得られた恨めつき被膜の表面状態を第1表に示す。
Using a copper plate for the cathode and a PT plated Ti plate for the anode, bath fj1
Plating was performed by pulse electrolysis while jetting a 10° C. plating solution from a nozzle toward the cathode. The pulse application conditions at this time are that the pulse repetition period is 50 ma to 5 s.
, 0m mill 5s, pulse 0,9. The average cathode current density is 1
0OA/dm" and 15OA/dm". Also, for comparison, the current density is 100A/dm'' and 15OA/dm
DC electrolysis was carried out at 1,700 C/c.
mz. The thickness of the grudge film obtained at this time is
It was in the range of 1.2 to 1.5 mm. Table 1 shows the surface condition of the sticky coating obtained by this electrolysis.

第1表から明らかなように、パルス電解によって得られ
た恨めつき被膜は、同し電流密度の直流電解によって得
られためっき被膜よりも表面性状が良好であって、1m
mを越える膜厚でもその表面性状の平滑性は十分に保た
れた。
As is clear from Table 1, the plated film obtained by pulse electrolysis has better surface properties than the plated film obtained by direct current electrolysis at the same current density.
Even when the film thickness exceeded m, the surface smoothness was sufficiently maintained.

第   1   表 山めっき被膜の表面状態 A;半光沢平滑B:無光沢平
滑 C:凹凸あり 一実施例2− 市販の高速度鍛めっき浴(ジャパンロナール株式会社製
シルハージェy ト220)を建浴し、シアン化銀カリ
ウムを用いて銀濃度を65g/ l 、液のpHを8.
2に調整した。陰極に銅板、陽極にptめっきTi板を
用い、浴温60℃のめっき液をノズルから陰極に噴出さ
せながら、パルス繰り返し周期が10m3〜10S1パ
ルス比率が0.5から0.9、平均陰極電流密度が5〇
八へdm”と100A/dm2の条件でパルス電解を行
った。また、比較のために電流密度が50A/dm”と
100A/dmで直流電解を行った。このとき、通電量
を1200C/cm” とした。このようにして得られ
た銀めっき被膜の厚みは、0.8〜1.0mmの範囲で
あった。電解によって得られた恨めつき被膜の厚みを、
第2表に示す。この第2表から明らかなように、パルス
比率が 0.5〜0.9で、パルス繰り返し周期が50
〜5Sのパルス電解によって得られためっき被膜の表面
は平滑であり、同し電流密度の直流電解によって得られ
ためっき被膜に比較してその表面状態は格段に優れてい
た。
Surface condition of the first Omotesama plating film A: Semi-gloss smooth B: Matte smooth C: Unevenness Example 2 - A commercially available high-speed forging plating bath (Silharjet 220 manufactured by Japan Ronal Co., Ltd.) was prepared. Using potassium silver cyanide, the silver concentration was adjusted to 65 g/l, and the pH of the solution was adjusted to 8.
Adjusted to 2. Using a copper plate as the cathode and a PT plated Ti plate as the anode, the plating solution with a bath temperature of 60°C was jetted from the nozzle to the cathode, and the pulse repetition period was 10m3 to 10S1, the pulse ratio was 0.5 to 0.9, and the average cathode current was Pulse electrolysis was performed at a density of 508 dm" and 100 A/dm2. For comparison, direct current electrolysis was performed at a current density of 50 A/dm" and 100 A/dm. At this time, the amount of current applied was 1200 C/cm''. The thickness of the silver plating film thus obtained was in the range of 0.8 to 1.0 mm. The thickness of the grating film obtained by electrolysis of,
Shown in Table 2. As is clear from Table 2, when the pulse ratio is 0.5 to 0.9 and the pulse repetition period is 50
The surface of the plating film obtained by pulse electrolysis at ~5S was smooth, and the surface condition was much better than that of the plating film obtained by direct current electrolysis at the same current density.

第   2   表 小めっき被膜の表面状態 A:鏡面光沢 B:平滑C;
凹凸あり D:デンドライト析出 一実施例3− ピロリン酸カリウム200g/ 1 、正リン酸二水素
カリウム20g/ R、亜セレン酸カリウムtoppm
、エチルキサントゲン酸カリウム20ppm+ エチレ
ンジアミン四酢酸2g/l及びシアン化銀カリウムを銀
?M度に換算して40g/ 1含む水溶液をpH9に調
整したものを、めっき液として使用した。
Table 2 Surface condition of small plating film A: Mirror gloss B: Smooth C;
With unevenness D: Dendrite precipitation Example 3 - Potassium pyrophosphate 200g/1, Potassium dihydrogen orthophosphate 20g/R, Potassium selenite toppm
, potassium ethylxanthate 20ppm+ ethylenediaminetetraacetic acid 2g/l and potassium silver cyanide as silver? An aqueous solution containing 40 g/1 in terms of M degree and adjusted to pH 9 was used as the plating solution.

陰極に銅板、陽極にptめっきTi板を用い、浴温50
℃でめっき液をノズルから陰極に噴出させながら、パル
ス繰り返し周期が50〜5s、パルス比率が0.5と0
.7.平均陰極電流密度がIOA/dm”から3OA/
dm”の条件でパルス電解を行った。また比較のために
、電流密度がIOA/dm”から3OA/dm2で直流
電解を行った。このとき、通電量を130C/cm”と
した。このようにして得られた銀めっき被膜の厚みは、
100〜120μmの範囲であった。この電解によって
得られた銀めっき被膜の表面状態を、第3表に示す。こ
の第3表から明らかなように、パルス電解によって得ら
れた恨めつき被膜は平滑であり、同し電流密度の直流電
解によって得られためっき被膜よりも表面状態が良好で
あった。
A copper plate is used as the cathode, a PT plated Ti plate is used as the anode, and the bath temperature is 50°C.
While jetting the plating solution from the nozzle to the cathode at ℃, the pulse repetition period was 50 to 5 s, and the pulse ratio was 0.5 and
.. 7. Average cathode current density from IOA/dm” to 3OA/dm
Pulse electrolysis was performed under the conditions of 100 dm''. For comparison, direct current electrolysis was performed at a current density of IOA/dm2 to 3 OA/dm2. At this time, the amount of current applied was set to 130C/cm''.The thickness of the silver plating film obtained in this way was:
It was in the range of 100 to 120 μm. Table 3 shows the surface condition of the silver plating film obtained by this electrolysis. As is clear from Table 3, the plated coating obtained by pulse electrolysis was smooth and had a better surface condition than the plated coating obtained by direct current electrolysis at the same current density.

第    3    表 注)めっき被膜の表面状態 A:半光沢平滑B:無光沢
平滑 C:デンドライト析出 〔発明の効果〕 以上に説明したように、本発明の銀めっき方法によれば
、外観が良好で厚みが100μmから1.5mmという
厚い恨めつき被膜を短時間で作ることができる。このた
め、電磁継電器の接点などで、従来接点チップの取付は
等のために行われていたろう付は作業を省略し、端子上
に直接銀接点を形成することができるようになった。ま
た、摺動子やブスバー等の電気的接触部或いは装飾品の
表面への恨厚膜めっきを施す作業に必要とされる時間も
短隼宿できる。
Table 3 Note) Surface condition of plating film A: Semi-gloss smooth B: Matte smooth C: Dendrite precipitation [Effects of the invention] As explained above, according to the silver plating method of the present invention, the appearance is good. A thick coating with a thickness of 100 μm to 1.5 mm can be created in a short time. For this reason, it has become possible to omit the brazing work that was conventionally performed for attaching contact chips to contacts of electromagnetic relays, etc., and to form silver contacts directly on the terminals. Further, the time required for applying thick film plating to the surfaces of electrical contact parts such as sliders and busbars or decorative items can be shortened.

Claims (1)

【特許請求の範囲】[Claims] 1、銀濃度が40〜80g/lで銀シアン化物以外のシ
アン化合物を含まない銀めっき浴を使用して、直流パル
スの周波数が50〜5000msの範囲にあり且つ繰り
返し周期に占める直流電流パルスの比率が0.5〜0.
9の範囲にあるパルス電流を用いて電解することを特徴
とする高速度電解銀めっき方法。
1. Using a silver plating bath with a silver concentration of 40 to 80 g/l and containing no cyanide other than silver cyanide, the frequency of the DC pulse is in the range of 50 to 5000 ms, and the frequency of the DC pulse in the repetition period is The ratio is 0.5-0.
A high-speed electrolytic silver plating method characterized by electrolyzing using a pulsed current in the range of 9.
JP18259985A 1985-08-19 1985-08-19 High-speed electrolytic sliver plating method Pending JPS6244592A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18259985A JPS6244592A (en) 1985-08-19 1985-08-19 High-speed electrolytic sliver plating method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18259985A JPS6244592A (en) 1985-08-19 1985-08-19 High-speed electrolytic sliver plating method

Publications (1)

Publication Number Publication Date
JPS6244592A true JPS6244592A (en) 1987-02-26

Family

ID=16121101

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18259985A Pending JPS6244592A (en) 1985-08-19 1985-08-19 High-speed electrolytic sliver plating method

Country Status (1)

Country Link
JP (1) JPS6244592A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100368499B1 (en) * 2000-02-09 2003-01-24 김주성 Composite plating for a contact of an electrical breaking switch
KR20050019555A (en) * 2003-08-19 2005-03-03 주식회사 비에스텍 Simultaneous silver colloid creation and silver plating method
CN103981548A (en) * 2014-05-20 2014-08-13 西安西光表面精饰有限公司 Silver plating process
CN103981549A (en) * 2014-05-20 2014-08-13 西安西光表面精饰有限公司 Silver-plating solution
CN109881222A (en) * 2015-01-30 2019-06-14 同和金属技术有限公司 Silver coating material and its manufacturing method

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100368499B1 (en) * 2000-02-09 2003-01-24 김주성 Composite plating for a contact of an electrical breaking switch
KR20050019555A (en) * 2003-08-19 2005-03-03 주식회사 비에스텍 Simultaneous silver colloid creation and silver plating method
CN103981548A (en) * 2014-05-20 2014-08-13 西安西光表面精饰有限公司 Silver plating process
CN103981549A (en) * 2014-05-20 2014-08-13 西安西光表面精饰有限公司 Silver-plating solution
CN109881222A (en) * 2015-01-30 2019-06-14 同和金属技术有限公司 Silver coating material and its manufacturing method

Similar Documents

Publication Publication Date Title
US6071398A (en) Programmed pulse electroplating process
US4092226A (en) Process for the treatment of metal surfaces by electro-deposition of metal coatings at high current densities
JPS6254397B2 (en)
CN110592626A (en) Cyanide-free electroplating brass liquid and use method thereof
JPS6244592A (en) High-speed electrolytic sliver plating method
JPH0136559B2 (en)
US6113770A (en) Method for anodizing using single polarity pulses
US4159926A (en) Nickel plating
GB2046794A (en) Silver and gold/silver alloy plating bath and method
JP2004035930A (en) Aluminum alloy material and anodization treatment method therefor
US3729396A (en) Rhodium plating composition and method for plating rhodium
US2646397A (en) Electroplating zinc using titanium containing electrolyte
JPS5921392B2 (en) Manufacturing method of copper foil for printed circuits
JPH05271981A (en) Platinum alloy plating bath and production of platinum alloy-plated article using the bath
GB2133040A (en) Copper plating bath process and anode therefore
JPS60138090A (en) Partial silver plating method
JPS644598B2 (en)
JPS5871391A (en) Method for electroplating steel wire for welding in copper sulfate bath
JPH06264281A (en) Palladium plating solution and palladium plating method using the same
CA1132939A (en) Rhodium plating
RU2062824C1 (en) Method of thick-layered anodizing of flat aluminium products
RU2280108C1 (en) Method for applying high-cohesion galvanic coating onto magnetite
JPS6367560B2 (en)
Sivakumar et al. Electrodeposition of nickel-cadmium alloys from a pyrophosphate bath
JPH11269696A (en) Production of electrode deposition coated aluminum material