JPS6239809B2 - - Google Patents

Info

Publication number
JPS6239809B2
JPS6239809B2 JP57015581A JP1558182A JPS6239809B2 JP S6239809 B2 JPS6239809 B2 JP S6239809B2 JP 57015581 A JP57015581 A JP 57015581A JP 1558182 A JP1558182 A JP 1558182A JP S6239809 B2 JPS6239809 B2 JP S6239809B2
Authority
JP
Japan
Prior art keywords
semiconductor
voltage
point contact
contact method
quartz tube
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57015581A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58134421A (ja
Inventor
Teruyuki Nitsuta
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TOHOKU DAIGAKU GAKUCHO
Original Assignee
TOHOKU DAIGAKU GAKUCHO
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TOHOKU DAIGAKU GAKUCHO filed Critical TOHOKU DAIGAKU GAKUCHO
Priority to JP57015581A priority Critical patent/JPS58134421A/ja
Publication of JPS58134421A publication Critical patent/JPS58134421A/ja
Publication of JPS6239809B2 publication Critical patent/JPS6239809B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Photovoltaic Devices (AREA)
  • Light Receiving Elements (AREA)
JP57015581A 1982-02-04 1982-02-04 Ｃｕ‐Ｓｉ‐Ｔｅ半導体 Granted JPS58134421A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57015581A JPS58134421A (ja) 1982-02-04 1982-02-04 Ｃｕ‐Ｓｉ‐Ｔｅ半導体

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57015581A JPS58134421A (ja) 1982-02-04 1982-02-04 Ｃｕ‐Ｓｉ‐Ｔｅ半導体

Publications (2)

Publication Number Publication Date
JPS58134421A JPS58134421A (ja) 1983-08-10
JPS6239809B2 true JPS6239809B2 (de) 1987-08-25

Family

ID=11892691

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57015581A Granted JPS58134421A (ja) 1982-02-04 1982-02-04 Ｃｕ‐Ｓｉ‐Ｔｅ半導体

Country Status (1)

Country Link
JP (1) JPS58134421A (de)

Also Published As

Publication number Publication date
JPS58134421A (ja) 1983-08-10

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