JPS623541B2 - - Google Patents
Info
- Publication number
- JPS623541B2 JPS623541B2 JP54023451A JP2345179A JPS623541B2 JP S623541 B2 JPS623541 B2 JP S623541B2 JP 54023451 A JP54023451 A JP 54023451A JP 2345179 A JP2345179 A JP 2345179A JP S623541 B2 JPS623541 B2 JP S623541B2
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- plasma flow
- collector
- magnetic pipe
- impurity separation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000012535 impurity Substances 0.000 claims description 17
- 238000000926 separation method Methods 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 14
- 229910052776 Thorium Inorganic materials 0.000 claims description 12
- 229910052770 Uranium Inorganic materials 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- ZSLUVFAKFWKJRC-IGMARMGPSA-N 232Th Chemical compound [232Th] ZSLUVFAKFWKJRC-IGMARMGPSA-N 0.000 claims description 2
- 239000000463 material Substances 0.000 claims description 2
- JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 claims description 2
- 230000008878 coupling Effects 0.000 claims 1
- 238000010168 coupling process Methods 0.000 claims 1
- 238000005859 coupling reaction Methods 0.000 claims 1
- 239000002245 particle Substances 0.000 claims 1
- 150000002500 ions Chemical class 0.000 description 9
- 238000010884 ion-beam technique Methods 0.000 description 8
- 238000000151 deposition Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 238000005452 bending Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
- 230000001151 other effect Effects 0.000 description 1
- 238000000053 physical method Methods 0.000 description 1
- 239000013076 target substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J49/00—Particle spectrometers or separator tubes
- H01J49/26—Mass spectrometers or separator tubes
Description
【発明の詳細な説明】
本発明は、不純物の分離方法に関し、特に半導
体素子製造工程の中で、半導体基板にデポジシヨ
ン膜を形成する場合、そのデポジシヨン物質に微
量に含まれる不純物を除去する方法に関するもの
である。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for separating impurities, and particularly to a method for removing trace amounts of impurities contained in a deposited material when forming a deposited film on a semiconductor substrate during a semiconductor device manufacturing process. It is something.
一般に半導体素子製造工程中に使用する物質は
極めて高い純度が要求され、例えばアルミニウム
（Al）は99.9999％の純度のものが市販されてい
る。このように高純度に精製された（Al）にお
いても7ppBのウラニウム（Ｕ）や5ppBのトリウ
ム（Th）が含有されており、Alの配線において
このAlに含まれているＵやThより放出するアル
フア（α）線により、半導体素子の中の活性領域
中に電荷を生じ、そのため回路が誤動作すること
が半導体メモリーの使用上重大な問題点となつて
いる。 In general, substances used in the manufacturing process of semiconductor devices are required to have extremely high purity; for example, aluminum (Al) with a purity of 99.9999% is commercially available. Even this highly purified (Al) contains 7ppB of uranium (U) and 5ppB of thorium (Th), which are released from the U and Th contained in this Al in the Al wiring. 2. Description of the Related Art Alpha (α) rays generate charges in active regions in semiconductor devices, which causes circuits to malfunction, which is a serious problem in the use of semiconductor memories.
このAl中のＵ、Thを除去する方式を考えると
現在の化学手段では除去ができない。したがつて
物理的な次の手段が考えられる。第１図はAlの
中のppB（10-9）程度のＵ、Thを除くため普通考
えられる物理的な方式を示したものである。イオ
ン源１中に図示せざる手段によりAlの蒸気を導
入し、図示せざる電源により放電を起こし、Al
プラズマ２を作る。このイオン源より引出し電極
８にてイオンを引出し、Alのイオンビーム４を
作り、偏向電磁石５内を通過せしめると、質量の
差に応じて偏向軌導が異なるため、６なるAlの
みのイオンビームとなり、７なるＵ，Th等の重
い不純物のイオンビームは６より分離され、スリ
ツト８にて阻止され、６のAlイオンビームのみ
通過し、コレクタ９上に取付けられた基板上にデ
ポジシヨンする。この方式は一般の同位元素電磁
分離器と全く同一の原理にもとづくものである。 Considering the method for removing U and Th from Al, current chemical means cannot remove them. Therefore, the following physical means can be considered. Figure 1 shows a physical method commonly considered for removing U and Th of the order of ppB (10 -9 ) from Al. Al vapor is introduced into the ion source 1 by a means not shown, and a discharge is caused by a power source not shown, resulting in Al vapor being introduced into the ion source 1.
Create plasma 2. When ions are extracted from this ion source by an extraction electrode 8 to create an Al ion beam 4 and passed through the deflecting electromagnet 5, the deflection trajectory differs depending on the difference in mass, so the ion beam only contains 6 Al. The ion beam of heavy impurities such as U and Th 7 is separated from the slit 8 and blocked by the slit 8, and only the Al ion beam of 6 passes through and is deposited on the substrate mounted on the collector 9. This method is based on exactly the same principle as general isotope electromagnetic separators.
しかしながら、この方式は低いエネルギーで多
量のイオンビームを得ることがむづかしいという
基本的な欠点が存在する。半導体へのデポジシヨ
ンは、半導体基板上にイオンが到着する際、欠陥
を作らないようにする必要があり、大体30eV以
下位にする必要がある。一方第１図のような同位
元素電磁分離装置はイオン引出しに30〜50KVを
使用するためこれを30eVに減速すると発散し、
コレクターに到着する時は極く少量のものにな
り、実用上使用できなくなる。 However, this method has a basic drawback in that it is difficult to obtain a large amount of ion beam with low energy. When depositing on a semiconductor, it is necessary to avoid creating defects when the ions arrive on the semiconductor substrate, and it is necessary to keep the voltage below about 30 eV. On the other hand, the isotope electromagnetic separation device shown in Figure 1 uses 30 to 50 KV for ion extraction, so if this is decelerated to 30 eV, it will diverge.
By the time it reaches the collector, it will be in such a small quantity that it will no longer be of any practical use.
この低エネルギーでの大量のイオンを輸送する
方式として、プラズマ流輸送方法が考案されてい
るが第２図にその原理と構成を示す。第２図にお
いて、真空容器１０はいなる真空排気孔により排
気され、プラズマ源１２がこの容器の中心におか
れ、これに図示せざる手段によりAlの蒸気が導
入され、また図示せざる電源１２より放電を起こ
し、この中に１３なるAlのプラズマを作る。い
まこの真空容器１０を同軸電磁石１４により取巻
いて、これを励磁すればAlプラズマ１３はプラ
ズマ流出孔１５よりプラズマ流１６を形成して流
出し、コレクタ１７に到着してデポジシヨンす
る。この方法によると、プラズマ流は本質的に熱
運動の速度にて流出するのでコレクタ１７には熱
エネルギーにて到着する。もし例えば20eVのエ
ネルギーにて到着せしめる必要がある場合は、プ
ラズマ源１２に直流20Vを加えてコレクターを接
地すれば、コレクタに20eVのイオンのエネルギ
ーでAlがデポジシヨンする。 A plasma flow transport method has been devised as a method for transporting a large amount of ions at low energy, and FIG. 2 shows its principle and configuration. In FIG. 2, a vacuum container 10 is evacuated by a vacuum exhaust hole, a plasma source 12 is placed at the center of the container, Al vapor is introduced into this by means not shown, and a power source 12 not shown is supplied. A discharge is generated and a plasma of Al 13 is created in this discharge. This vacuum vessel 10 is now surrounded by a coaxial electromagnet 14, and when this is excited, the Al plasma 13 flows out from the plasma outflow hole 15 forming a plasma stream 16, reaches the collector 17, and is deposited. According to this method, the plasma stream exits at an essentially thermal velocity and thus arrives at the collector 17 with thermal energy. For example, if it is necessary to arrive at an energy of 20 eV, if 20 V DC is applied to the plasma source 12 and the collector is grounded, Al will be deposited on the collector with an ion energy of 20 eV.
プラズマ流輸送方法を用いるとこのように目的
物質の輸送とエネルギーの問題を解決することは
できるが、このままでは質量分離の能力を有しな
いので不純物除去という当初の目的を達成するこ
とはできない。 Using the plasma flow transport method can solve the problems of transporting the target substance and energy, but as it is, it does not have the capability of mass separation, so the original purpose of removing impurities cannot be achieved.
本発明は、このプラズマ流輸送方法に質量分離
の作用を有せしめ、AlとＵ、Thを分離し高純度
のAlデポジシヨンを行なうことを目的とする。 The object of the present invention is to provide a mass separation function to this plasma flow transport method, to separate Al from U and Th, and to perform high-purity Al deposition.
第３図にこの工夫の１例を示す。真空容器１８
は真空排気孔１９により排気される。プラズマ源
２０中は第２図に説明したのと同様の方法により
Alプラズマ２１を発生し、同軸電磁石２２を励
磁すると、プラズマ流出孔２４より２５なるAl
のプラズマ流が流出する。いま真空容器１８を図
のように曲げ、この曲りに沿つて偏向同軸電磁石
２３を位置せしめると２５のプラズマ流を導いて
きた磁場パイプは同軸電磁石の中心方向の偏向に
伴い磁場バルブも同一方に偏向する。したがつて
プラズマ流２５もこれに沿つて偏向する。 Figure 3 shows an example of this technique. Vacuum container 18
is exhausted through the vacuum exhaust hole 19. inside the plasma source 20 in a manner similar to that described in FIG.
When Al plasma 21 is generated and the coaxial electromagnet 22 is excited, 25 Al
plasma flow flows out. Now, if the vacuum vessel 18 is bent as shown in the figure and the deflection coaxial electromagnet 23 is positioned along this bend, the magnetic field pipe that has guided the plasma flow 25 will be deflected toward the center of the coaxial electromagnet, and the magnetic field valve will also be on the same side. deflect. Therefore, the plasma flow 25 is also deflected along this direction.
このようにプラズマ流を導く磁場パイプの方向
を偏向せしめて、これによりプラズマ流の方向を
偏向せしめることは複数本のプラズマ流を１本に
合流せしめるプラズマ合流の方式としてしられて
いる。しかしながらこれにおいては、プラズマ流
の合流手段としてのプラズマ流の偏向が主眼であ
るため、他の効果については何ら考慮したもので
はない。 Deflecting the direction of the magnetic field pipe that guides the plasma flow in this manner, thereby deflecting the direction of the plasma flow, is known as a method of plasma merging in which multiple plasma flows are merged into one. However, in this case, since the main focus is on the deflection of the plasma flow as a means for merging the plasma flow, no consideration is given to other effects.
また第３図に示すようにプラズマ流を磁場パイ
プの方向を変えることにより偏向する場合、関連
する要素を考える。いま、Al原子もＵ原子もと
もにプラズマ源内で熱平衡に達していたとし、そ
のエネルギーをＥとし、各々の質量、速度をそれ
ぞれＭAl、ＭU、ＶAl、ＶUとすると次式が成立す
る。 Further, when the plasma flow is deflected by changing the direction of the magnetic field pipe as shown in FIG. 3, the related factors will be considered. Now, assuming that both Al atoms and U atoms have reached thermal equilibrium within the plasma source, and their energy is E, and their masses and velocities are M Al , M U , V Al , and V U , the following equation holds true. .
ＭAl≪ＭUのため、ＶAl＞ＶU ……(2)
いま曲げる磁場ベクトルを〓、各速度ベクトル
を〓〓〓、〓〓とし、その結果働く力〓〓〓、〓
〓を求めると、ｅを電子の電荷とする次式が成立
する。 Since M Al ≪M U , V Al >V U ...(2) Let the magnetic field vector to be bent now be 〓, each velocity vector be 〓〓〓, 〓〓, and the resulting force 〓〓〓〓,〓
When 〓 is found, the following equation holds true, where e is the charge of the electron.
〓〓〓＝ｅ（〓〓〓×〓）、〓〓＝
ｅ（〓〓×〓） ……(3)
ここで〓〓〓×〓は〓〓〓ベクトル〓ベクトル
のベクトル積を現わす。〓〓〓=e(〓〓〓×〓),〓〓=e(〓〓×〓)...(3) Here, 〓〓〓×〓 represents the vector product of 〓〓〓vector〓vector.
以上の考察によりＦAl＞ＦUであり、同一磁界
強度中における変位置はAlの方がＵより大き
い。またThの場合もＵと同じ傾向を示す。した
がつてプラズマ流２５は偏向同軸磁場２３のため
質量の小さいAlプラズマ流２６と質量の大きい
Ｕ、Thプラズマ流２７に分離する。この２７は
本発明の目的として分離したい成分のため、スリ
ツト２８にて除去される。そうしてスリツト２６
を通り抜けたAlのプラズマ流がコレクタ２９に
到着し、基板上にデポジシヨンする。またこのプ
ラズマ源に電位を与えた場合は第２図の場合と同
一であつて、与えた電位のエネルギーにてコレク
タ上にデポジシヨンする。 According to the above considerations, F Al >F U , and the displacement of Al is larger than that of U in the same magnetic field strength. Further, the case of Th also shows the same tendency as U. Therefore, the plasma flow 25 is separated by the deflecting coaxial magnetic field 23 into an Al plasma flow 26 with a small mass and a U, Th plasma flow 27 with a large mass. This 27 is a component to be separated for the purpose of the present invention, and is therefore removed by the slit 28. Then slit 26
The Al plasma flow that has passed through reaches the collector 29 and is deposited on the substrate. Further, when a potential is applied to this plasma source, it is the same as the case shown in FIG. 2, and the energy of the applied potential causes the deposition on the collector.
第４図はプラズマ流中の不純物は分離する他の
手段の一例である。真空容器３０は真空排気孔３
１より排気される。いまプラズマ源３２を中心よ
りはずして位置せしめ、３３なるAlプラズマを
発生させ同軸電磁石３４を励磁して流出孔３５よ
りプラズマ流３６を流出せしめる。いま同軸電磁
石３４に直角方向に電磁石３７により磁場を加え
ると磁場パイプの方向は軸方向ベクトルとこれに
垂直方向のベクトルの和の方向になつて偏向され
この垂直に加えた磁場の影響がなくなる領域でそ
の方向のみが軸方向にもどる。この場合この磁場
パイプを流れてきたプラズマ流も当然この磁場パ
イプに沿つて曲げられ、この時第３図の説明の通
り、プラズマ流は３６は軽い成分のプラズマ流３
８と重い成分のプラズマ流３９に分離する。そう
して各々コレクタ４０と４１に到着しデボジシヨ
ンする。 FIG. 4 is an example of another means for separating impurities in a plasma stream. The vacuum container 30 has a vacuum exhaust hole 3
It is exhausted from 1. Now, the plasma source 32 is positioned off-center, Al plasma 33 is generated, the coaxial electromagnet 34 is excited, and a plasma stream 36 is caused to flow out from the outflow hole 35. Now, when a magnetic field is applied by the electromagnet 37 in a direction perpendicular to the coaxial electromagnet 34, the direction of the magnetic field pipe is deflected in the direction of the sum of the axial vector and the vector perpendicular to this, and the effect of this perpendicularly applied magnetic field disappears. , only that direction returns to the axial direction. In this case, the plasma flow that has flowed through this magnetic field pipe is naturally bent along this magnetic field pipe, and at this time, as explained in Fig. 3, the plasma flow 36 is a plasma flow 3 with light components.
8 and a heavy component plasma stream 39. Then, they arrive at collectors 40 and 41 and are deposited.
以上の第３図、第４図にみられるようにプラズ
マ流の流路である磁場パイプを同軸電磁石の幾何
的配置により曲げるかあるいは他の磁場を合成し
て曲げるかに拘らず、プラズマ流中の成分の質量
の分離が起り例としてあげたAl中のＵ、Th等の
極微量の成分が化学的に精製し得ない微量の不純
物を取除くことができると同時に、分離したプラ
ズマ流を用いてそのまま基板へのデボジシヨンに
使用することができる。 As shown in Figures 3 and 4 above, regardless of whether the magnetic field pipe, which is the flow path of the plasma flow, is bent by the geometrical arrangement of coaxial electromagnets or by combining other magnetic fields, The separation of the mass of the components occurs, and trace amounts of impurities such as U and Th in Al, which cannot be chemically purified, can be removed. It can be used as is for deposition onto a substrate.
このように本発明は微量不純物の分離除去に大
きい効果を発輝するが、逆に微量不純物の分離と
その採取にも使用することができる。また一回の
分離で不充分な場合は更に２回以上の分離をつな
ぐことができる。 As described above, the present invention is highly effective in separating and removing trace impurities, but it can also be used to separate and collect trace impurities. Furthermore, if one separation is insufficient, two or more separations can be performed.
第１図は同位元素電磁分離器の原理、構成の説
明図、第２図はプラズマ流輸送方法の原理、構成
の説明図、第３図は本発明の一例であるプラズマ
流輸送方法を用い、同軸電磁石を幾何的配置によ
り曲げ磁場パイプを偏向せしめた不純物分離の原
理、構成の説明図、第４図は本発明の他の一例で
あるプラズマ流輸送方法を用い他の磁場を合成し
て磁場パイプを偏向せしめた不純物分離の原理と
構成の説明図である。
１……イオン源、２……発生プラズマ、３……
引出し電極、４……イオンビーム、５……偏向電
磁石、６……分離したイオンビーム（Al）、７…
…分離したイオンビーム（Ｕ、Th）、８……スリ
ツト、９……コレクタ、１０……真空容器、１１
……真空排気孔、１２……プラズマ源、１３……
プラズマ、１４……同軸電磁石、１５……プラズ
マ流出孔、１６……プラズマ流、１７……コレク
タ、１８……真空容器、１９……排気孔、２０…
…プラズマ源、２１……プラズマ、２２……同軸
電磁石、２３……偏向用同軸電磁石、２４……プ
ラズマ流出孔、２５……プラズマ流、２６……分
離プラズマ流（Al）、２７……分離プラズマ流
（Ｕ、Th）、２８……スリツト、２９……コレク
タ、３０……真空容器、３１……真空排気孔、３
２……プラズマ源、３３……プラズマ、３４……
同軸電磁石、３５……プラズマ流出孔、３６……
プラズマ流、３７……偏向用同軸電磁石、３８…
…分離したプラズマ流（Al）、３９……分離した
プラズマ流（Ｕ、Th）、４０……コレクター、４
１……コレクタ。
Figure 1 is an explanatory diagram of the principle and configuration of an isotope electromagnetic separator, Figure 2 is an explanatory diagram of the principle and configuration of a plasma flow transport method, and Figure 3 is an illustration of the principle and configuration of an isotope electromagnetic separator. An explanatory diagram of the principle and configuration of impurity separation in which a magnetic field pipe is deflected by bending coaxial electromagnets by geometrically arranging them. FIG. 2 is an explanatory diagram of the principle and configuration of impurity separation by deflecting a pipe. 1...Ion source, 2...Generated plasma, 3...
Extraction electrode, 4...Ion beam, 5...Bending electromagnet, 6...Separated ion beam (Al), 7...
...Separated ion beam (U, Th), 8...Slit, 9...Collector, 10...Vacuum vessel, 11
...Vacuum exhaust hole, 12...Plasma source, 13...
Plasma, 14... Coaxial electromagnet, 15... Plasma outflow hole, 16... Plasma flow, 17... Collector, 18... Vacuum vessel, 19... Exhaust hole, 20...
... Plasma source, 21 ... Plasma, 22 ... Coaxial electromagnet, 23 ... Coaxial electromagnet for deflection, 24 ... Plasma outflow hole, 25 ... Plasma flow, 26 ... Separation plasma flow (Al), 27 ... Separation Plasma flow (U, Th), 28...slit, 29...collector, 30...vacuum container, 31...vacuum exhaust hole, 3
2...Plasma source, 33...Plasma, 34...
Coaxial electromagnet, 35...Plasma outflow hole, 36...
Plasma flow, 37... Coaxial electromagnet for deflection, 38...
... Separated plasma flow (Al), 39 ... Separated plasma flow (U, Th), 40 ... Collector, 4
1... Collector.
Claims (1)
りコレクタに導くプラズマ流輸送方法において、
途中の磁気パイプを偏向せしめ、この磁気パイプ
の中を流れるプラズマ流の偏向によりプラズマ流
中の物質成分の質量分離を起せしめることを特徴
とする不純物の分離方法。 ２ 磁気パイプの偏向を同軸電磁石の幾何配置に
より行なう特許請求の範囲第１項記載の不純物の
分離方法。 ３ 磁気パイプの偏向を磁気パイプとは別の磁場
との結合により行なう特許請求の範囲第１項記載
の不純物の分離方法。 ４ プラズマ流をアルミニウムを主成分とするも
のからなるものとし、不純物をウラニウム、トリ
ウムなどのアルフア粒子放出元素とする特許請求
の範囲第１項記載の不純物の分離方法。 ５ 不純物分離後のアルミニウムプラズマ流をコ
レクタ上の半導体基板上に導き、半導体装置のア
ルミニウム配線用膜としてデポジシヨンする特許
請求の範囲第４項記載の不純物の分離方法。[Claims] 1. A plasma flow transport method in which a magnetic pipe guides a plasma flow from a plasma source to a collector,
An impurity separation method characterized by deflecting a magnetic pipe in the middle and causing mass separation of material components in the plasma flow by deflecting the plasma flow flowing through the magnetic pipe. 2. The impurity separation method according to claim 1, wherein the magnetic pipe is deflected by the geometrical arrangement of coaxial electromagnets. 3. The impurity separation method according to claim 1, wherein the magnetic pipe is deflected by coupling with a magnetic field different from that of the magnetic pipe. 4. The impurity separation method according to claim 1, wherein the plasma flow is made of aluminum as a main component, and the impurity is an alpha particle emitting element such as uranium or thorium. 5. The impurity separation method according to claim 4, wherein the aluminum plasma flow after impurity separation is guided onto a semiconductor substrate on a collector and deposited as an aluminum wiring film of a semiconductor device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2345179A JPS55117856A (en) | 1979-03-02 | 1979-03-02 | Method and apparatus for separating impurities |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2345179A JPS55117856A (en) | 1979-03-02 | 1979-03-02 | Method and apparatus for separating impurities |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21249685A Division JPS61114455A (en) | 1985-09-27 | 1985-09-27 | Impurity separator |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55117856A JPS55117856A (en) | 1980-09-10 |
| JPS623541B2 true JPS623541B2 (en) | 1987-01-26 |
Family
ID=12110855
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2345179A Granted JPS55117856A (en) | 1979-03-02 | 1979-03-02 | Method and apparatus for separating impurities |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55117856A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61284579A (en) * | 1985-06-11 | 1986-12-15 | Matsushita Electric Ind Co Ltd | Plasma concentration type cvd device |
| JPS61114455A (en) * | 1985-09-27 | 1986-06-02 | Hitachi Ltd | Impurity separator |
| DE58909180D1 (en) * | 1988-03-23 | 1995-05-24 | Balzers Hochvakuum | Process and plant for coating workpieces. |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5339662A (en) * | 1976-09-22 | 1978-04-11 | Hitachi Ltd | Dial indicator for washer |
-
1979
- 1979-03-02 JP JP2345179A patent/JPS55117856A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5339662A (en) * | 1976-09-22 | 1978-04-11 | Hitachi Ltd | Dial indicator for washer |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS55117856A (en) | 1980-09-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP1082747B1 (en) | Acceleration and analysis architecture for ion implanter | |
| EP0156913B1 (en) | Ion microbeam implanting apparatus | |
| Medved et al. | Kinetic ejection of electrons from solids | |
| US4124801A (en) | Apparatus and process for separating materials | |
| US3294583A (en) | Process of coating a silicon semiconductor with indium using an ion beam | |
| JP7190570B2 (en) | Electrostatic filters and ion implanters with asymmetric electrostatic configurations | |
| JPS623541B2 (en) | ||
| US4649279A (en) | Negative ion source | |
| US3845300A (en) | Apparatus and method for magnetoplasmadynamic isotope separation | |
| US3573454A (en) | Method and apparatus for ion bombardment using negative ions | |
| US5805972A (en) | Method and apparatus for separating isotopes | |
| US6287463B1 (en) | Collector cup | |
| JPS61114455A (en) | Impurity separator | |
| US3313969A (en) | Charged particle deflecting apparatus having hemispherical electrodes | |
| US7462820B2 (en) | Isotope separation process and apparatus therefor | |
| RU2039849C1 (en) | Vacuum arc unit | |
| Meunier et al. | Preparation of thin targets with the isotope separator Paris | |
| JPS59138044A (en) | Focusing ion beam device | |
| Sobol et al. | Analysis of Electron Current Extraction from Synthesized Plasmas | |
| Alton | A simple, high efficiency, negative surface ionization source | |
| Kellerman et al. | Particle trapping and annihilation within the extraction system of ion sources | |
| JP2001011608A (en) | Film forming apparatus | |
| Cook et al. | Apparatus and process for separating materials | |
| Smith | Electromagnetic enrichment of stable isotopes | |
| Ishikawa et al. | Direct deposition of focused ion beams with an impregnated-electrode-type liquid metal ion source |