JPS6233455A - Manufacture of contact type one-dimensional image device - Google Patents

Abstract

PURPOSE:To simplify the manufacturing process of devices and to increase the manufacturing yield of devices, by forming an inter-layer insulating layer for forming matrix wiring so as to cover an light-receiving element. CONSTITUTION:II-IV sole compound semiconductor including Cd or two or more kinds of compound semiconductor material of them is made of raw powder of about 0.2mum being added with CuCl2 and/or AgCl2 of 0.1-1mol as an impurity, being fired for 30-60min at 600-800 deg.C in an inert gas, and being treated with an activating process to provide a photoconductivity. Concerning the device structure, a photoelectric converting film 2 formed on an insulating substrate 1 through an firing process is formed in belt-shape, and common electrodes 3 and stripe-shaped discrete electrodes 4 are formed so as to cover the both sides of the photoelectric converting film 2. The discrete electrodes 4 are extended continuously to form lower layer wiring 5, on which an inter-layer insulating film and an organic insulating layer 6 serving as an element protecting film are formed. Moreover, upper wiring 7 is formed thereon, and the electrode wiring is formed as matrix wiring divided into blocks each of a plural number.

Description

Detailed Description of the Invention <Industrial Application Field> The present invention provides a photoconductive material containing a Cd-containing n-VI group compound semiconductor or two or more of these compound semiconductors as a photoelectric conversion film. The present invention relates to a method for manufacturing a contact type one-dimensional image element that employs a mold reading method and matrix wiring drive.

<Prior art> A method for producing a long or large-area photoelectric conversion film! A Stop H Senroku Fungi Neck/Ratio Hook 51. Thin film fabrication techniques such as pulverized glow discharge electric phase epitaxy are used.

For this reason, photoelectric conversion films are protected using various organic resin films or inorganic insulating films.

<Problems to be Solved by the Invention> In the conventional thin film manufacturing techniques described above, the quality of the film characteristics largely depends on the manufacturing technology of the manufacturing equipment, and there are problems in terms of yield and reliability. For example, when producing an amorphous silicon thin film using reactive sputtering or glow discharge electrophase growth, advanced technology is required to control the glow discharge plasma, making reproducibility difficult.

It becomes difficult to obtain uniformity of film properties.

Furthermore, when producing If-Vl group compound semiconductor thin films containing Cd by sputtering or vacuum evaporation, the deviation from the stoichiometric composition varies slightly depending on the production conditions, and the photoconductivity imparted may be affected. Cd, Cu or A for
Activation treatment by doping with a halogen compound such as G also has a major drawback in that it is difficult to obtain reproducibility depending on the manufacturing conditions.

Further, in the conventional device manufacturing method, an extra process is required to form a protective film of the device, which causes problems such as high cost.

The present invention was devised in view of these points.
It is an object of the present invention to provide a method for manufacturing a contact type one-dimensional image element, which simplifies the process of manufacturing the element and makes it possible to improve the yield of manufacturing the element.

Means for Solving the Problems> In order to achieve the above object, the method for manufacturing a contact type one-dimensional image element of the present invention uses a single n-■ group compound semiconductor containing Cd or two or more of these. In a contact type one-dimensional image element in which a light receiving element made of a compound semiconductor and a matrix wiring part are provided on the same substrate, an interlayer insulating layer for forming the matrix wiring is formed to cover the light receiving element part. It consists of

Effect> As described above, in the present invention, by manufacturing a light-receiving element composed of a single n-VI group compound semiconductor containing Cd or a compound semiconductor of two or more of these types on the same substrate as the matrix wiring forming part, Since the glabellar insulating film for matrix wiring formation also serves as a protective film for the photoelectric conversion film constituting the light-receiving element, the manufacturing process of the element is simplified. By using an insulating polymer film as the film, defects such as pinholes in the protective film and interlayer insulating film can be reduced as much as possible, and the yield of device manufacturing can be improved.

According to the device manufacturing process of the present invention described above, since the protective film formation process for the photoelectric conversion film is completed at the beginning of the device manufacturing process by forming an interlayer insulating film for forming multilayer wiring, through-hole formation and wiring fineness are performed in the later process. It becomes possible to completely eliminate the influence of various etchants on the characteristics of the light-receiving element during processing steps, etc., and the reliability of the characteristics of the element can be greatly improved.

In addition, an organic polymer material has a lower dielectric constant than an inorganic insulating material, and a thick film of 5 to 10 μm can be easily formed, so an insulating polymer film is used as an interlayer insulating film as in the example. This makes it possible to keep the capacitance of the multilayer wiring portion small, and it is possible to form a matrix wiring that does not pose any problem when driving elements at high speed.

Furthermore, thick films that are difficult to form with inorganic insulating materials can be easily formed with organic polymer materials, making it easier to prevent pinholes and improving yields in device manufacturing.

Cost reduction is achieved.

<Example> Hereinafter, an example of the present invention will be described in detail with reference to the drawings.

A single II-VI group compound semiconductor containing Cd or a compound semiconductor material of two or more of them is prepared by adding CuC to raw powder of about 0.2 μm obtained by a known chemical precipitation method.
l 2 and/or A g Cl 2 from 0.1 to 1
60% of the added mole% impurities in an inert gas.
The material used is one that has been given photoconductivity by firing at 0 to 800[deg.] C. for 30 to 60 minutes and performing an activation treatment. This crystalline powder is used as the starting material in the following examples.

The device configuration is shown in Figures 1 and 2 (A-A' sectional view in Figure 1).
As shown in the figure, a photoelectric conversion film 2 formed through a baking process is provided in a band shape on an insulating substrate I, and a common electrode 3 and strip-shaped individual electrodes 4 are provided to cover both sides of the photoelectric conversion film 2. The individual electrodes 4 are continuously extended to form a lower wiring 5, on which an organic insulating layer 6 serving as an interlayer insulation film and an element protection film is formed, and an upper wiring 7 is formed on top of this. is formed, and the electrode wiring is formed as a matrix wiring divided into a plurality of blocks.

The materials of the electrodes 3, 4 and the wirings 5, 7 are high melting point metals with a small work function, such as Ti, Ta, or an alloy thereof, so that they can make ohmic contact with the photoelectric conversion film 2, and at the same time perform photoelectric conversion. 2 and the insulating substrate]. As the insulating substrate 1, a highly heat-resistant substrate such as a ceramic substrate, an alumina substrate, or a pyrenk frost is used. FIG. 3 is a diagram showing the basic circuit configuration when the contact type one-dimensional image element manufactured according to the present invention is actually used. The illustrated resistors R1, R2... are the common electrode 3.
and each individual electrode 4, 4, . 11 is a bias DC power supply for applying to the common electrode 3, and 12 is a load resistor for reading the signal current as a voltage, which is output to the signal output terminal 13.

Reference numeral 14 denotes a changeover switch, and by switching, each common electrode 3 is connected to the bias DC power supply 11 or the ground side. 15 is a switch for connecting each individual electrode 4 to the load resistor 12, and the switches 14 and 15 are, for example, C-MO
S) A switching element consisting of a transistor, which is sequentially controlled by a gate in the element connected to a shift register.
A switching operation is performed.

With the above configuration, the photoelectric conversion film 2 constituting each pixel element exhibits a resistance change depending on the amount of light received, and this resistance change is outputted as a signal current by the bias DC power supply 11, so that the terminal 13 has a change in resistance depending on the amount of light. The corresponding voltage is output.

Therefore, when each pixel is scanned by switching the switch I'4.15, the light receiving element constituting each pixel exhibits a resistance change according to the amount of light received, and a signal current is sent from the terminal 13 to generate one-dimensional image information. A read signal is output.

This configuration does not require blocking diodes to prevent crosstalk, and by using matrix wiring, the number of switching elements can be significantly reduced, making it easy to manufacture devices and reducing costs. Become.

The photoelectric conversion films produced in the examples of the present invention exhibit extremely high photoconductivity; for example, the CdSe-based photoelectric conversion film has
When irradiated with light at 695 nm and 301x, the brightness ratio is 103 or more, and a signal with a photocurrent of 1 μA or more is obtained.It uses a real-time readout method, and has excellent photoresponse characteristics, with a rise (90%) and a rise Both descents (90%) are 5m
It exhibits a fast response of 5 ec or less, and exhibits extremely favorable characteristics as an element for high-speed reading. Furthermore, since the photodetector is completely sealed with an organic insulating resin film, the photoconductor paste can be produced by screen printing, and the organic insulating layer can also be formed by a coating process. Therefore, it is also suitable for mass production.

Hereinafter, the manufacturing process of an element using a CdSe-based photoelectric conversion film will be described in detail.

A #7059 glass substrate made by Corning Co., Ltd. was used as the insulating substrate 1. A photoconductive paste was applied onto this substrate 1 using a screen printing method, and after drying with hot air at 00°C for 1 hour, it was dried in an N2 atmosphere. aOO℃/15 minutes, then 500℃
A heat treatment was performed for 30 minutes to form a photoelectric conversion film having a thickness of 4 μm. O-1 [r Makise 11 Kiyoshi 12.2nd condition]
CdS with an average particle size of about 2 μm
e Crystal powder (Cu: 0.4 mol% doped, 800°C in N2
Processed powder) was added with 1°3 mol% of CdC, 2% by weight of low melting point glass frit (Tg: ass°C) based on the total amount, and an appropriate amount of oil for viscosity adjustment (containing 1.5% by weight of ethyl cellulose), and then milled in a ball mill. The mixture was mixed for about 50 hours in a vacuum cleaner.

A common electrode 3 is placed on the photoelectric conversion film 2 produced in this way.
A counter electrode consisting of individual electrodes 4 was formed by a lift-off method, and lower layer wiring 5 was also formed. In this example, approximately 5000A of Ti was deposited as electrodes and wiring to form a light-receiving element array consisting of 1728 pixels with an electrode spacing of 50mm and an electrode length of 70μm. A polyimide resin layer 6 having a thickness of about 5 pm after curing was formed on the entire surface by a spin-coding method as an interlayer insulating film and an element protective film. To form through holes for matrix wiring, first, polyimide resin was patterned in a half-cured state using normal photolithography technology, Ni--Cu was deposited as an upper wiring material, and then the polyimide resin film was fully cured. For the upper wiring pattern, a matrix wiring with 32 elements in one block was formed using ordinary photography technology.

Since the interlayer insulating layer 6 of the matrix wiring portion was simultaneously formed on the light receiving element after the lift-off process, it was not affected by the process of forming the upper wiring, and no deterioration in the characteristics of the photoelectric conversion film was observed.

The device manufactured by the above method had a bias voltage of 12V, 3
It was possible to read a signal current of about 15 meLA on average with respect to the incident light of 0.06x, and the variation in output characteristics between each pixel was good at ±15%.

In addition, the light response speed is 3.0 m5e (90%)
It was possible to fabricate a high-speed contact type one-dimensional image element that exhibited excellent response characteristics with c fall (90%) of 0.5 m5ec and was readable using a real-time reading method. Furthermore, when we conducted a reliability test on this device at a high temperature of 65°C and 95% RH, we obtained good results with characteristic fluctuations within 5% even after 200 hours. It has been found that the resin layer sufficiently functions as a sealing film for improving the reliability of the device.

<Effects of the Invention> As described above, according to the present invention, since the light-receiving element array is sealed at the same time as the matrix wiring formation process, the number of steps can be simplified and mass productivity is also excellent. Therefore, according to the present invention, it is possible to manufacture a highly reliable device at a low cost and with a high yield.

[Brief explanation of drawings]

FIG. 1 is a partial plan view of a contact type one-dimensional image element manufactured according to an embodiment of the present invention, and FIG.
FIG. 3 is a diagram showing a cross section of a portion, and is a diagram showing a basic circuit configuration when a contact type one-dimensional image element manufactured according to the present invention is actually used. I... Insulating substrate, 2... Photoelectric conversion film, 3... Common electrode, 4... Individual electrode, 5... Lower layer wiring, 6...
・Organic insulating film as interlayer insulating film and element protection film, 7.
・Top wiring. Figure 1 Figure 2

Claims (1)

[Claims] 1. A close-contact type one-dimensional device in which a light-receiving element composed of a single II-VI group compound semiconductor containing Cd or a compound semiconductor of two or more of these and a matrix wiring section are provided on the same substrate. 1. A method of manufacturing a contact type one-dimensional image element, characterized in that, in the image element, an interlayer insulating layer for forming matrix wiring is formed so as to cover the light-receiving element part. 2. The light-receiving element may contain C as a flux for the compound semiconductor.
It is formed by applying a paste made by dispersing one or more of the halides and/or low-melting glass frit in an organic binder to a substrate, and subjecting it to a heat treatment process at 400°C to 600°C in an inert gas atmosphere. A method of manufacturing a contact type one-dimensional image element according to claim 1, characterized in that: 3. The method of manufacturing a contact type one-dimensional image element according to claim 1, wherein the interlayer insulating layer on the light receiving element and on the matrix wiring portion is composed of an insulating polymer film. 4. The method of manufacturing a contact type one-dimensional image element according to claim 1, wherein the electrodes constituting the light receiving element and the lower electrode of the matrix wiring section are formed continuously.