JPS6231762Y2 - - Google Patents

Info

Publication number
JPS6231762Y2
JPS6231762Y2 JP1982136133U JP13613382U JPS6231762Y2 JP S6231762 Y2 JPS6231762 Y2 JP S6231762Y2 JP 1982136133 U JP1982136133 U JP 1982136133U JP 13613382 U JP13613382 U JP 13613382U JP S6231762 Y2 JPS6231762 Y2 JP S6231762Y2
Authority
JP
Japan
Prior art keywords
image sensor
heating chamber
heated
heating
solid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP1982136133U
Other languages
Japanese (ja)
Other versions
JPS5940714U (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1982136133U priority Critical patent/JPS5940714U/en
Publication of JPS5940714U publication Critical patent/JPS5940714U/en
Application granted granted Critical
Publication of JPS6231762Y2 publication Critical patent/JPS6231762Y2/ja
Granted legal-status Critical Current

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  • Electric Ovens (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Description

【考案の詳細な説明】 〔考案の技術分野〕 本考案は、イメージセンサとして固体撮像素子
を備えた高周波加熱装置に係り、特に加熱室の内
壁面処理構造の改良に関する。
[Detailed Description of the Invention] [Technical Field of the Invention] The present invention relates to a high-frequency heating device equipped with a solid-state imaging device as an image sensor, and particularly relates to an improvement in the inner wall surface treatment structure of a heating chamber.

〔考案の技術的背景とその問題点〕[Technical background of the invention and its problems]

たとえば電子レンジのごとき高周波加熱装置に
おいて、被加熱物に対する加熱調理のパワーレベ
ルもしくは加熱時間等を制御する手段が種々開発
されている。近時その一手段として固体撮像素子
の利用が考慮されている。この種撮像素子は、た
とえばCCD(Charge Couple Device)イメージ
センサと呼ばれるものであり、その受光面に入射
される光学情報を複数の単位に分けて読み出す機
能をもつているデバイスを指す。なお説明すれ
ば、光電変換機能に加えて光電変換により発生し
た信号電荷を感光セルで蓄積することができる信
号電荷蓄積機能をもつている。
For example, in high-frequency heating devices such as microwave ovens, various means have been developed for controlling the power level, heating time, etc. of heating an object to be heated. Recently, the use of solid-state image sensors has been considered as one means for achieving this goal. This type of image sensor is, for example, called a CCD (Charge Couple Device) image sensor, and refers to a device that has a function of reading out optical information incident on its light-receiving surface by dividing it into a plurality of units. To explain, in addition to the photoelectric conversion function, it has a signal charge accumulation function that allows the photosensitive cell to accumulate signal charges generated by photoelectric conversion.

ところでこの素子は、加熱室に収納した被加熱
物からの反射光の大きさ(量)によつて動作され
るものであるため、被加熱物とその周囲となる部
分からそれぞれ素子に入射される光(光源からの
光による反射光)はその強さに差があるほど被加
熱物の判別が容易となる。また被加熱物からの反
射光の強さが強いほど素子の測定系は動作が容易
となる。すなわち被加熱物の設定されている場所
の光源からの照度が大きいほど良く、かつ被加熱
物とその他の部分は反射率に差が大きいほど良い
ことになる。
By the way, this element operates based on the magnitude (amount) of reflected light from the object to be heated stored in the heating chamber, so the light that is incident on the element from the object to be heated and its surroundings respectively. The greater the difference in the intensity of light (reflected light from a light source), the easier it becomes to identify the object to be heated. Further, the stronger the intensity of the reflected light from the object to be heated, the easier the operation of the measurement system of the element becomes. In other words, the higher the illuminance from the light source at the location of the heated object, the better, and the larger the difference in reflectance between the heated object and other parts, the better.

〔考案の目的〕[Purpose of invention]

本考案は上記事情に着目してなされたものであ
り、その目的とするところは、固体撮像素子の測
定精度の向上化を図り、加熱効率の向上化を得る
高周波加熱装置を提供するものである。
The present invention was developed in view of the above circumstances, and its purpose is to provide a high-frequency heating device that improves the measurement accuracy of solid-state image sensors and improves heating efficiency. .

〔考案の概要〕[Summary of the idea]

本考案は、加熱室内壁面の固体撮像素子視角内
にある部分を無反射処理し、視野角外の部分を高
反射率を得る処理を施したものである。
In the present invention, a portion of the wall surface of the heating chamber within the viewing angle of the solid-state image sensor is subjected to anti-reflection treatment, and a portion outside the viewing angle is treated to obtain high reflectance.

〔考案の実施例〕[Example of idea]

以下本考案の一実施例を図面にもとづいて説明
する。図中1は、たとえば電子レンジの本体であ
り、この内部に加熱室2が設けられる。加熱室2
の内底部には図示しない被加熱物を載置するため
の載置棚3が収容される。また加熱室2の天井壁
上には固体撮像素子であるCCDイメージセンサ
4と光源ランプ5が取着される。これらに対向す
る天井壁部位にはそれぞれ透孔6,7が穿設され
る。したがつてCCDイメージセンサ4は透孔6
を介して加熱室2内に角度θの視野角を得るよう
になつている。上記角度θは上記載置棚3を視野
に収める角度である。上記光源ランプ5は透孔7
を介して加熱室2内を照射できるようになつてい
る。加熱室2の内壁面は後述するように処理され
る。すなわち上記CCDイメージセンサ4の視野
角θに入る部分は無反射処理部2aとする。実際
には上記視野角θよりも余裕をもつて大きな範囲
を定めて良い。無反射処理部2a以外の内壁面は
全て反射率の極めて高い高反射処理部2bとす
る。したがつて光源ランプ5からの光は高反射処
理部2bで反射して散乱光となり、被加熱物を無
影状態に照射できる。しかも被加熱物周辺は無反
射処理部2aとなつているから、上記CCDイメ
ージセンサ4に対して被加熱物だけが反射するこ
とになる。
An embodiment of the present invention will be described below based on the drawings. Reference numeral 1 in the figure is, for example, a main body of a microwave oven, and a heating chamber 2 is provided inside the main body. Heating chamber 2
A mounting shelf 3 for mounting an object to be heated (not shown) is housed in the inner bottom of the heating device. Furthermore, a CCD image sensor 4, which is a solid-state imaging device, and a light source lamp 5 are mounted on the ceiling wall of the heating chamber 2. Through holes 6 and 7 are formed in the ceiling wall portions facing these, respectively. Therefore, the CCD image sensor 4 has a through hole 6.
A viewing angle of angle θ is obtained within the heating chamber 2 through the heating chamber 2. The angle θ is an angle that allows the placement shelf 3 to be included in the field of view. The light source lamp 5 has a through hole 7
The inside of the heating chamber 2 can be irradiated through the heating chamber 2. The inner wall surface of the heating chamber 2 is treated as described below. That is, the portion included in the viewing angle θ of the CCD image sensor 4 is defined as the non-reflection processing portion 2a. In reality, a range that is larger than the viewing angle θ may be determined with some margin. All inner wall surfaces other than the non-reflection treated portion 2a are high reflection treated portions 2b having extremely high reflectance. Therefore, the light from the light source lamp 5 is reflected by the high reflection processing section 2b to become scattered light, and the object to be heated can be irradiated in a shadowless state. Moreover, since the area around the object to be heated is a non-reflection treated area 2a, only the object to be heated is reflected to the CCD image sensor 4.

しかして、光源ランプ5からの光は高反射処理
部2bに反射して散乱光となり、被加熱物を直接
的,間接的に照射する。無反射処理部2aでは反
射しないから、被加熱物のみが浮び上つた状態で
反射しその反射光をCCDイメージセンサ4が受
ける。これは被加熱物の大きさを正しく測定し、
図示しない制御部にその信号を送つて加熱調理の
パワーレベルや加熱時間等を設定できる。
The light from the light source lamp 5 is reflected by the high reflection processing section 2b and becomes scattered light, which directly or indirectly irradiates the object to be heated. Since no reflection occurs in the non-reflection processing section 2a, only the object to be heated is reflected in a raised state, and the CCD image sensor 4 receives the reflected light. This accurately measures the size of the heated object,
By sending the signal to a control section (not shown), the cooking power level, heating time, etc. can be set.

このように上記実施例においては、光源ランプ
5を加熱室2の天井壁に取付けたから、加熱室2
内の被加熱物に対して均一の照度を与えることが
できる。
In the above embodiment, since the light source lamp 5 is attached to the ceiling wall of the heating chamber 2, the heating chamber 2
Uniform illuminance can be given to the object to be heated inside.

なお上記実施例においては、固体撮像素子4と
してCCDイメージセンサを用いるようにした
が、これに限定されるものではなく、たとえば
MOS(Meta Oxide Semiconductor),CID
(Charge Injection Device)もしくはBBD
(Bucket Brigade Device)を用いても良い。
In the above embodiment, a CCD image sensor is used as the solid-state image sensor 4, but the invention is not limited to this, and for example,
MOS (Meta Oxide Semiconductor), CID
(Charge Injection Device) or BBD
(Bucket Brigade Device) may also be used.

〔考案の効果〕[Effect of idea]

以上説明したように本考案によれば、加熱室内
壁面の固体撮像素子の視野角内にある部分を無反
射処理し、視野角外の部分を高反射率を得る処理
を施したから、被加熱物に対する照度を上げるこ
とができ、視野角内においては反射率を少くして
固体撮像素子の測定誤差の低下を図り、加熱効率
の向上化を得るという効果を奏する。
As explained above, according to the present invention, the part of the heating chamber wall that is within the viewing angle of the solid-state image sensor is subjected to anti-reflection treatment, and the part outside the viewing angle is treated to obtain high reflectance. It is possible to increase the illuminance to an object, reduce the reflectance within the viewing angle, reduce the measurement error of the solid-state image sensor, and improve the heating efficiency.

【図面の簡単な説明】[Brief explanation of the drawing]

図面は本考案の一実施例を示す高周波加熱装置
の概略的縦断面図である。 2……加熱室、4……固体撮像素子(CCDイ
メージセンサ)、θ……視野角、2a……無反射
処理部、2b……高反射処理部。
The drawing is a schematic longitudinal cross-sectional view of a high-frequency heating device showing an embodiment of the present invention. 2... Heating chamber, 4... Solid-state imaging device (CCD image sensor), θ... Viewing angle, 2a... Non-reflection processing section, 2b... High reflection processing section.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 加熱室に収納した被加熱物の大きさを固体撮像
素子で検知し加熱時間のパワーレベル、加熱時間
等を制御するものにおいて、上記加熱室内壁面の
固体撮像素子視野角内にある部分を無反射処理
し、視野角外の部分を高反射率を得る処理を施し
たことを特徴とする高周波加熱装置。
In a device that detects the size of the object to be heated stored in a heating chamber with a solid-state image sensor and controls the power level, heating time, etc. of the heating time, a portion of the wall surface of the heating chamber that is within the viewing angle of the solid-state image sensor is non-reflective. A high-frequency heating device characterized in that a high-frequency heating device is processed to obtain a high reflectance in a portion outside the viewing angle.
JP1982136133U 1982-09-08 1982-09-08 High frequency heating device Granted JPS5940714U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1982136133U JPS5940714U (en) 1982-09-08 1982-09-08 High frequency heating device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1982136133U JPS5940714U (en) 1982-09-08 1982-09-08 High frequency heating device

Publications (2)

Publication Number Publication Date
JPS5940714U JPS5940714U (en) 1984-03-15
JPS6231762Y2 true JPS6231762Y2 (en) 1987-08-14

Family

ID=30306181

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1982136133U Granted JPS5940714U (en) 1982-09-08 1982-09-08 High frequency heating device

Country Status (1)

Country Link
JP (1) JPS5940714U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016056247A1 (en) * 2014-10-10 2016-04-14 パナソニックIpマネジメント株式会社 Heating cooker

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6909954B2 (en) * 2016-03-29 2021-07-28 パナソニックIpマネジメント株式会社 Cooker
CN112005054B (en) 2018-04-25 2023-02-28 松下知识产权经营株式会社 Heating cooker

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016056247A1 (en) * 2014-10-10 2016-04-14 パナソニックIpマネジメント株式会社 Heating cooker
JP2016080211A (en) * 2014-10-10 2016-05-16 パナソニックIpマネジメント株式会社 Heating cooker

Also Published As

Publication number Publication date
JPS5940714U (en) 1984-03-15

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