JPS62299111A - Buffer device - Google Patents

Buffer device

Info

Publication number
JPS62299111A
JPS62299111A JP61143401A JP14340186A JPS62299111A JP S62299111 A JPS62299111 A JP S62299111A JP 61143401 A JP61143401 A JP 61143401A JP 14340186 A JP14340186 A JP 14340186A JP S62299111 A JPS62299111 A JP S62299111A
Authority
JP
Japan
Prior art keywords
output
input
inverters
transmission delay
gate width
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP61143401A
Other languages
Japanese (ja)
Inventor
Takashi Morigami
森上 隆
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP61143401A priority Critical patent/JPS62299111A/en
Publication of JPS62299111A publication Critical patent/JPS62299111A/en
Pending legal-status Critical Current

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  • Pulse Circuits (AREA)
  • Logic Circuits (AREA)

Abstract

PURPOSE:To control the leading/trailing waveform and a transmission delay time of an output optionally by connecting inverters whose input/output response times have a difference in parallel. CONSTITUTION:An input signal from an input terminal 1 is given to the 1st and 2nd transfer gates 2, 3 and its threshold voltage causes a delay in an input/ output response in an output waveform of the 1st and 2nd inverters 4, 5. The leading/trailing of the waveform at an output terminal 6 are controlled by the gate width of the 1st and 2nd inverters 4, 5, and the input/output transmission delay time is controlled by the 1st and 2nd transfer gates 2, 3. The gate width of the 1st and 2nd inverters 4, 5 is selected as 1:2, and the Pch, Nch gate width of the 1st and 2nd transfer gates 2, 3 is selected as 50mum, then the leading/trailing slows down by 1.0 ns in comparison with a conventional circuit and the transmission delay is retarded by nearly 1.0 ns.

Description

【発明の詳細な説明】 3、発明の詳細な説明 〔産業上の利用分野〕 本発明はバッファー装置に関し、特に相補型MO8集積
回路におけるバッファー装置の構成に関する。
Detailed Description of the Invention 3. Detailed Description of the Invention [Field of Industrial Application] The present invention relates to a buffer device, and particularly to the configuration of a buffer device in a complementary MO8 integrated circuit.

〔従来の技術〕[Conventional technology]

従来、この種のバッファー装置は、第3図に示す通りイ
ンバータ回路友けで構成されている。従って、出力波形
の立上り、立下り及び入出力伝達遅延時間は、インバー
タを構成するMO8I−ラ/ジスタのゲート幅で決まる
Conventionally, this type of buffer device is composed of an inverter circuit as shown in FIG. Therefore, the rise and fall of the output waveform and the input/output transmission delay time are determined by the gate width of the MO8I-ra/register that constitutes the inverter.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

上述した従来のバッファー装置は、インバータだけの構
成となっているので、インバータを構成するMOSトラ
ンジスタのゲート幅により、出力波形の立上9.立下シ
及び入出力伝達遅延時間が決まるため、設計の自由度が
ないという欠点がある。
Since the above-mentioned conventional buffer device is configured with only an inverter, the rise of the output waveform depends on the gate width of the MOS transistor that constitutes the inverter.9. There is a drawback that there is no degree of freedom in design because the fall time and input/output transmission delay time are determined.

〔問題点を解決するための手段〕[Means for solving problems]

本発明のバッファー装置は、異なる電源端子間に接続さ
れた一4電型MO8)ランジスタと逆導電型MOSトラ
ンジスタとの対を複数個有し、このトランジスタの対が
それぞれ並列に接続されており、このトランジスタ対の
一部のトランジスタの対のゲートと他の残りのトランジ
スタの対のゲートとの間に遅延回路を有することを特徴
とする特〔実施例〕 次に、本発明について図面を参照して説明する。
The buffer device of the present invention has a plurality of pairs of a 14-volt type MO8) transistor and a reverse conductivity type MOS transistor connected between different power supply terminals, and each pair of transistors is connected in parallel, A special embodiment characterized in that a delay circuit is provided between the gates of some of the transistor pairs and the gates of the remaining transistor pairs.Next, the present invention will be described with reference to the drawings. I will explain.

第1図は、本発明の第1の実施例の等価回路図である。FIG. 1 is an equivalent circuit diagram of a first embodiment of the present invention.

第1および第2のインバータ4,5はそれぞれNチャネ
ルトランジスタとPチャネルトランジスタとからなるC
MOSインバータでなり、第2のインバータ5のゲート
を入力端子1に直接接続し、第1のインバータ4のゲー
トは、第1及び第2のトランスファーゲート2,3t−
介して入力端子に接続する。第1のトランスファーゲー
トのNチャネルトランジスタ(以下Nchと略す)のゲ
ートヲ入力端子へ、Pfマネルトランジスタ(以下Pc
hと略す)のゲートを出力端子6に接続し、また第2の
トランスファーゲートのNchとPchのゲートをそれ
ぞれ出力端子と入力端子に接続する。
The first and second inverters 4 and 5 each include an N-channel transistor and a P-channel transistor.
The gate of the second inverter 5 is directly connected to the input terminal 1, and the gate of the first inverter 4 is connected to the first and second transfer gates 2, 3t-.
Connect to the input terminal via the A Pf mannel transistor (hereinafter Pc
h) is connected to the output terminal 6, and the Nch and Pch gates of the second transfer gate are connected to the output terminal and the input terminal, respectively.

第1及び第2のインバータの出力は、ともに出力端子に
接続している。
The outputs of the first and second inverters are both connected to an output terminal.

入力端子1からの入力信号を第1.第2のトランスファ
ーゲート2,3を通して、それのしきい値電圧により第
1及び第2のインバータの出力波形に入出力応答の遅延
を生じさせる。この時の出力端子60波形は、第1.第
2のインバータのゲート幅により立上り、立下シをコン
トロールでき、また第1.第2のトランスファーゲート
によシ入出力伝達遅延時間をコントロールできる。シミ
ュレーションの結果、第1と第2のインバータのゲート
幅を1:2にし、第1と第2のトランスファーゲートの
Pc11. Nchゲート幅を50 pmとした場合、
従来の回路に比べ立上υ、立下9で1.Qns遅くなシ
、伝達遅延で約1.Ons遅くなった。
The input signal from input terminal 1 is input to the first terminal. Through the second transfer gates 2 and 3, the threshold voltage thereof causes a delay in the input/output response of the output waveforms of the first and second inverters. The output terminal 60 waveform at this time is the 1st. The rise and fall times can be controlled by the gate width of the second inverter, and the gate width of the second inverter can be controlled. The input/output transmission delay time can be controlled by the second transfer gate. As a result of the simulation, the gate width of the first and second inverters was set to 1:2, and the Pc11. of the first and second transfer gates was set to 1:2. When the Nch gate width is 50 pm,
Compared to the conventional circuit, the rise time is υ and the fall time is 9. Qns is slow, the transmission delay is about 1. Ons is late.

第2図は本発明の第2の実施例の等価回路図である。第
1図と異なり、抵抗7を入力端子1と第1のインバータ
のゲート40間に接続する。この抵抗値により入出力伝
達遅延時間をコントロールできる。また、この実施例は
回路構成が簡単で、現在使用しているバッファー回路を
もとに容易に設計できる利点がある。シミ二V−ショ/
の結果、抵抗500Ω、第1と第2のインバータのゲー
ト幅比1:2で従来に比べ立上9.立下りで1.Qns
1伝達遅延で約1.5nsの遅れがでた。
FIG. 2 is an equivalent circuit diagram of a second embodiment of the present invention. Unlike FIG. 1, a resistor 7 is connected between the input terminal 1 and the gate 40 of the first inverter. The input/output transmission delay time can be controlled by this resistance value. Further, this embodiment has the advantage that the circuit configuration is simple and that it can be easily designed based on the buffer circuit currently in use. Simini V-Sho/
As a result, with a resistance of 500Ω and a gate width ratio of the first and second inverters of 1:2, the startup time was 9. 1 on the falling edge. Qns
One transmission delay resulted in a delay of approximately 1.5 ns.

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明は、入出力応答時間に差をつ
けたインバータを並列に接続することにより、任意に出
力の立上り、立下り波形及び伝達遅延時間をコントロー
ルできる効果がある。特に1本発明はバッファー系のI
Cやより高速なICの出力段に設置することにより、高
ドライブ能力によるリンギング等の不具合を解決できる
効果がある0
As explained above, the present invention has the effect of arbitrarily controlling the output rise and fall waveforms and transmission delay time by connecting inverters in parallel with different input and output response times. In particular, one aspect of the present invention is the buffer system I
By installing it in the output stage of C or higher speed IC, it has the effect of solving problems such as ringing due to high drive capacity.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の第1の実施例を示す等1曲回路図、第
2図は本発明の第2の実施例を示す等価回路図、第3図
は従来のバッファー装置の等価回路図である。 1・・・・・・入力端子、2・・・・・・第1のトラン
スファーゲート、3・・・・・・第2のトランスファー
ゲート、4・・・・・・第1のインバータ、5・・・・
・・第2のインバータ、6・・・・・・出力端子、7・
・・・・・抵抗。 代理人 弁理士  内 原   晋 第 1 図 第 2 闇 第 3 図
Fig. 1 is an equivalent circuit diagram showing a first embodiment of the present invention, Fig. 2 is an equivalent circuit diagram showing a second embodiment of the invention, and Fig. 3 is an equivalent circuit diagram of a conventional buffer device. It is. DESCRIPTION OF SYMBOLS 1...Input terminal, 2...First transfer gate, 3...Second transfer gate, 4...First inverter, 5... ...
...Second inverter, 6... Output terminal, 7.
·····resistance. Agent Patent Attorney Susumu Uchihara Figure 1 Figure 2 Dark Figure 3

Claims (1)

【特許請求の範囲】[Claims] 異なる電源端子間に接続された一導電型MOSトランジ
スタと逆導電型MOSトランジスタとの対を複数個有し
、前記トランジスタの対がそれぞれ並列に接続されてお
り、前記トランジスタの対の一部のトランジスタの対の
ゲートと他の残りのトランジスタの対のゲートとの間に
遅延回路を有することを特徴とするバッファー装置。
It has a plurality of pairs of one conductivity type MOS transistor and opposite conductivity type MOS transistor connected between different power supply terminals, each of the pairs of transistors are connected in parallel, and some of the transistors of the pair of transistors are connected in parallel. A buffer device comprising a delay circuit between the gates of the pair of transistors and the gates of the remaining transistor pairs.
JP61143401A 1986-06-18 1986-06-18 Buffer device Pending JPS62299111A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61143401A JPS62299111A (en) 1986-06-18 1986-06-18 Buffer device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61143401A JPS62299111A (en) 1986-06-18 1986-06-18 Buffer device

Publications (1)

Publication Number Publication Date
JPS62299111A true JPS62299111A (en) 1987-12-26

Family

ID=15337909

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61143401A Pending JPS62299111A (en) 1986-06-18 1986-06-18 Buffer device

Country Status (1)

Country Link
JP (1) JPS62299111A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5986920A (en) * 1982-11-10 1984-05-19 Matsushita Electric Ind Co Ltd Pulse generating device
JPS60208114A (en) * 1984-03-31 1985-10-19 Toshiba Corp Semiconductor integrated circuit device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5986920A (en) * 1982-11-10 1984-05-19 Matsushita Electric Ind Co Ltd Pulse generating device
JPS60208114A (en) * 1984-03-31 1985-10-19 Toshiba Corp Semiconductor integrated circuit device

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