JPS62292070A - Contact type image sensor and its production - Google Patents

Contact type image sensor and its production

Info

Publication number
JPS62292070A
JPS62292070A JP61135814A JP13581486A JPS62292070A JP S62292070 A JPS62292070 A JP S62292070A JP 61135814 A JP61135814 A JP 61135814A JP 13581486 A JP13581486 A JP 13581486A JP S62292070 A JPS62292070 A JP S62292070A
Authority
JP
Japan
Prior art keywords
photoelectric conversion
conversion element
substrates
image sensor
element substrates
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP61135814A
Other languages
Japanese (ja)
Inventor
Koichi Nakamura
公一 中村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Business Innovation Corp
Original Assignee
Fuji Xerox Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Xerox Co Ltd filed Critical Fuji Xerox Co Ltd
Priority to JP61135814A priority Critical patent/JPS62292070A/en
Publication of JPS62292070A publication Critical patent/JPS62292070A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To make the size in subscanning direction small and to improve the accuracy of dimension in production by positioning the adjacent photoelectric conversion element at the end of adjacent photoelectic conversion element substrates on a base member having the prescribed plane accuracy in the interval corrsponding to picture element density. CONSTITUTION:A base member 1 having the prescribed plane accurcy holds plural photoelectric conversion element substrates 2 by bringing the substrates 2 into contact directly with its base. The substrates 2 has photoelectric conversion elements 3 in array at the interval of g=62.5mum (sixteen dots/mm) and the interval of the elements 3 positioned at the end of the adjacent substrates 2 is set g=62.5upsilonm. The plural substrates 2 are arrayed in a straight line and the elements 3 are arranged in a straight line. When the distance of the edges of the elements 3 positioned at the foremost end and the substrates 2 is set as l and the interval between the substrates 2 is set as delta, g=2l+delta is obtained. If delta=0 and g=2l are set, the substrates 2 are arranged tightly. Thus the size in subscanning direction can be made small and the accuracy of dimension in production can be improved.

Description

【発明の詳細な説明】 3、発明の詳細な説明。[Detailed description of the invention] 3. Detailed description of the invention.

〔産業上の利用分野〕[Industrial application field]

本発明は大きなサイズの原1.yrであっても原稿幅と
同し長さの光電変換素子アレイを所定の精度で直線状に
配置できるようにした密着型イメージセンサおよびその
製造方法に関する。
The present invention is suitable for large size materials.1. The present invention relates to a contact type image sensor that allows a photoelectric conversion element array having the same length as the document width to be linearly arranged with a predetermined accuracy even if the image sensor is yr, and a method for manufacturing the same.

〔従来の技術〕[Conventional technology]

従来の密着型イメージセンサとして、例えば、特開昭6
0−128772号公報に示されるものがある。ここに
示される密着型イメージセンサは、副走査方向に所定の
ピンチ数だけ離れた二本の平行な直線上に、例えば、ア
モルファスシリコン、C6S等の光電変換素子アレイを
有した光電変換素子基板(イメージセンサチップ)を千
鳥状に、かつ、主走査方向に所定の間隔を存して配置し
た構成になっている。
As a conventional contact type image sensor, for example,
There is one shown in Japanese Patent No. 0-128772. The contact image sensor shown here has a photoelectric conversion element substrate (for example, a photoelectric conversion element substrate (such as amorphous silicon, C6S, etc.) having a photoelectric conversion element array made of amorphous silicon, C6S, etc. on two parallel straight lines separated by a predetermined number of pinches in the sub-scanning direction. The image sensor chips (image sensor chips) are arranged in a staggered manner at predetermined intervals in the main scanning direction.

以上の構成において、例えば、ファクシミリ装置のプラ
テン(図示せず)上に原稿を載置して副走査速度に応じ
た速度で原稿を移送すると、光源によって照射された原
稿走査線上の反射光がセルフォックレンズ(図示せず)
を介して対応する光電変換素子に結像される。
In the above configuration, for example, when an original is placed on the platen (not shown) of a facsimile machine and the original is transported at a speed corresponding to the sub-scanning speed, the reflected light on the original scanning line irradiated by the light source Fock lens (not shown)
The image is formed on the corresponding photoelectric conversion element via the .

このとき、原稿は前述した副走査方向に所定のピッチ数
だけ離れた二本の走査線上で光電変換素子基板の主走査
方向の間隔に応じた間隔で原稿内容を読み取られ、電気
信号として変換された後所定の信号処理を受ける。即ち
、第1の走査線上で読み取られた奇数番領域の読取信号
と、第2の走査線上で読み取られた偶数番領域の読取信
号を交互に組み合わせて合成することによって原稿幅に
対応した主走査方向の一定走査線の読取信号を得ること
ができる。従って、原稿サイズが大きくなったとしても
、製造上あるいはコスト上の理由がら長さに限界のある
光電変換素子基板を使用しながら原稿サイズに応した長
さの密着型イメージセンサを得ることができる。
At this time, the contents of the document are read on two scanning lines separated by a predetermined number of pitches in the sub-scanning direction, at intervals corresponding to the spacing of the photoelectric conversion element board in the main scanning direction, and converted into electrical signals. After that, it undergoes predetermined signal processing. That is, by alternately combining and synthesizing the reading signals of the odd-numbered areas read on the first scanning line and the reading signals of the even-numbered areas read on the second scanning line, main scanning corresponding to the document width is performed. A read signal of scan lines with constant direction can be obtained. Therefore, even if the original size becomes large, it is possible to obtain a contact image sensor with a length corresponding to the original size while using a photoelectric conversion element substrate that has a limited length due to manufacturing or cost reasons. .

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

しかし、従来の密着型イメージセンサによれば、光電変
換素子基板を二本の平行な直線上に千鳥状に配置してい
るため、奇数番領域と偶数番領域の読取信号を合成しな
ければならず、かつ両領域の接続部において原稿の一部
を重複して読み取っている。そのため、副走査方向のサ
イズが大になり、また、二本の直線上に配置される光電
変換素子基板の位置を所定の精度にしなければならなら
ず、かつ重複して読み取った信号の処理が必要である。
However, in conventional contact-type image sensors, the photoelectric conversion element substrates are arranged in a staggered manner on two parallel straight lines, so the read signals of odd-numbered areas and even-numbered areas must be combined. Moreover, a portion of the document is read redundantly at the connection portion between both areas. Therefore, the size in the sub-scanning direction becomes large, the position of the photoelectric conversion element substrate placed on two straight lines must be set to a predetermined accuracy, and the processing of redundantly read signals is required. is necessary.

〔問題点を解決するための手段〕[Means for solving problems]

本発明は上記に鑑みてなされたものであり、余分な信号
処理の必要性を省き、副走査方向のサイズの小型化を図
り、製造上の寸法精度を容易に達成するため、光電変換
素子基板の端部を所定の位置で切断した後この端部で隣
接する光電変換素子を画素密度に応じた間隔にして一直
線上に配置するようにした密着型イメージセンサおよび
その製造方法を提供するものである。
The present invention has been made in view of the above, and is intended to eliminate the need for extra signal processing, reduce the size in the sub-scanning direction, and easily achieve dimensional accuracy in manufacturing. The present invention provides a contact type image sensor and a method for manufacturing the same, in which the end of the image sensor is cut at a predetermined position, and then adjacent photoelectric conversion elements are arranged in a straight line at intervals corresponding to the pixel density at this end. be.

以下、本発明による密着型イメージセンサおよびその製
造方法を詳細に説明する。
Hereinafter, a contact type image sensor and a method for manufacturing the same according to the present invention will be explained in detail.

〔実施例〕〔Example〕

第1図(イ)、(ロ)は本発明の密着型イメージセンサ
の一実施例を示し、所定の平面積度を有したベース部材
1が複数の光電変換素子基板2をその底面に直接接触し
て支持している。光電変換素子基板2はg = 62.
5μmの間隔(16ドツト/1m)で光電変換素子3を
アレイ状に有しており、隣接する基板2の端部に位置す
る素子30間隔もg = 62.5μmに設定されてい
る。複数の基板3は一直線状に配列されているため、素
子3も一直線状になっている。
FIGS. 1(A) and 1(B) show an embodiment of the contact type image sensor of the present invention, in which a base member 1 having a predetermined planar area directly contacts a plurality of photoelectric conversion element substrates 2 with its bottom surface. and support it. The photoelectric conversion element substrate 2 has g=62.
The photoelectric conversion elements 3 are arranged in an array at intervals of 5 μm (16 dots/1 m), and the spacing between elements 30 located at the ends of adjacent substrates 2 is also set to g = 62.5 μm. Since the plurality of substrates 3 are arranged in a straight line, the elements 3 are also in a straight line.

第1図(ロ)は隣接する基板2の端部を拡大したもので
あり、最も端部に位置する素子3と基板2の縁の距離を
β、基板2の間隔をδとすると、g=21+δとなる。
FIG. 1(B) is an enlarged view of the edges of adjacent substrates 2. If the distance between the edge of the substrate 2 and the element 3 located at the end is β, and the distance between the substrates 2 is δ, then g= It becomes 21+δ.

δ−01g=27!とすると、基板2が密接配置される
ことになる。即ち、1=62.572μmとなるように
基板2の端部を切断加工すれば良い。
δ−01g=27! In this case, the substrates 2 will be closely placed. That is, the end portion of the substrate 2 may be cut so that 1=62.572 μm.

ここで、AOサイズの原稿読取装置に適用される密着型
イメージセンサを例示すると、次の通りである。
Here, an example of a contact type image sensor applied to an AO size document reading device is as follows.

ベース部材の長さ    874■ 光電変換部の有効長   864龍 光電変換部のドツト数 13.824 ドツト密度(ドツト間隔)16/■璽(62,5μm)
以上の密着型イメージセンサにおいて、4096ド・ノ
ド、257 mmの基板を使用し、その両端を切断加工
して3456ドソトの基板2とし、これを4個使用して
上述の密着型イメージセンサを得た。
Length of base member 874 ■ Effective length of photoelectric conversion section 864 Dragon Number of dots in photoelectric conversion section 13.824 Dot density (dot spacing) 16/■ (62.5 μm)
In the above contact-type image sensor, a 4096-inch, 257-mm substrate is used, and both ends of the substrate are cut to form a 3,456-inch substrate 2, and four of these are used to obtain the above-mentioned contact-type image sensor. Ta.

次に、第2図(イ)、(ロ)により本発明の密着型イメ
ージセンサの製造方法を説明する。
Next, a method for manufacturing a contact type image sensor according to the present invention will be explained with reference to FIGS. 2(a) and 2(b).

前述した通り、4096ドツト、2571墓の基板の両
端を切断した後研摩して3456ドソドの光電変換素子
(光電変換部の有効長を216龍とする)を有する基板
2とする。
As described above, both ends of the substrate with 4096 dots and 2571 dots are cut and polished to obtain a substrate 2 having 3456 dots of photoelectric conversion elements (the effective length of the photoelectric conversion part is 216 dots).

この基板2の端部を密接させてベース部材1上に配置し
、基板2の一方の側面より弾性部材4を介して押圧し、
他方の側面よりマイクロメータ5を介して押圧する。マ
イクロメータ5を介する押圧は弾性部材4の弾性力に抗
して行われ、マイクロメータ5の微調整によって基板2
の位置を所定の位置に設定して仮り止めを行う。この仮
り止め後、基板2の側面に接着剤6を塗布し、ベース部
材1と基板2を直接接触(間に接着剤を介しないで)さ
せたまま基板2を固定する(第2図(ロ))。
The ends of the substrate 2 are placed on the base member 1 in close contact with each other, and pressed from one side of the substrate 2 via the elastic member 4,
Press from the other side via the micrometer 5. Pressing via the micrometer 5 is performed against the elastic force of the elastic member 4, and fine adjustment of the micrometer 5 causes the substrate 2 to be pressed.
Set the position to a predetermined position and temporarily secure it. After this temporary fixing, adhesive 6 is applied to the side surface of the substrate 2, and the substrate 2 is fixed while keeping the base member 1 and the substrate 2 in direct contact (without intervening adhesive between them) (see Fig. 2). )).

第3図は上述した基板2の位置調整を行う位置調整装置
を示し、ベース部材1を載置する基台10と、基台の両
側に設けられた弾性機構14およびマイクロメータ機構
15を有する。弾性機構14は内部に圧縮ばね16を有
し、この圧縮ばね16によって突出するようにロッド1
7が付勢され、ロッド17の付勢力は基板2の一方の側
面と接触しているスペーサ18に与えられている。一方
、マイクロメータ機構15はその調整によって前後進し
、その各先端が一直線上にあるとき各マイクロメータの
初期値が同一となる様なロッド19を有し、ロッド19
は基板2の他の側面とその先端で接触しているスペーサ
20を図示上左右に運動させる。
FIG. 3 shows a position adjustment device for adjusting the position of the substrate 2 described above, and includes a base 10 on which the base member 1 is placed, and an elastic mechanism 14 and a micrometer mechanism 15 provided on both sides of the base. The elastic mechanism 14 has a compression spring 16 inside, and the rod 1 is pushed out by the compression spring 16.
7 is biased, and the biasing force of the rod 17 is applied to the spacer 18 that is in contact with one side of the substrate 2. On the other hand, the micrometer mechanism 15 has a rod 19 that moves forward and backward by adjustment, and has a rod 19 such that the initial value of each micrometer is the same when each tip of the rod is on a straight line.
The spacer 20, which is in contact with the other side surface of the substrate 2 at its tip, is moved left and right in the drawing.

以上の構成において、基台10上にベース部材1を載置
し、ベース部材1上に複数の基板2を配列し、その両側
よりスペーサ18.20によって挟持する。従って、基
板2は圧縮ばね16によって図示上左方に付勢される。
In the above configuration, the base member 1 is placed on the base 10, a plurality of substrates 2 are arranged on the base member 1, and the substrates 2 are sandwiched from both sides by the spacers 18 and 20. Therefore, the substrate 2 is biased to the left in the drawing by the compression spring 16.

この時基板2は図示しない圧縮ばねにより図示上方から
押えられてその浮き上がりが防止され、この状態でマイ
クロメータを微調整し、それによって付勢力に抗した運
動を基板2に与えて基板2を所定の位置に設定する。こ
の後、前述した基板2のベース部材lへの仮り止めが行
われる。
At this time, the substrate 2 is pressed down from above in the drawing by a compression spring (not shown) to prevent it from floating up, and in this state, the micrometer is finely adjusted, thereby giving the substrate 2 a movement against the biasing force to move the substrate 2 into a predetermined position. Set to the position. After this, the above-described substrate 2 is temporarily fixed to the base member l.

本発明の密着型イメージセンサは、従来の千鳥状に配置
された基板を有するものに比べ、二走査線上の走査に基
づいて読取信号を合成する必要がないため、その位置精
度はより低い値(例えば31μm)の設定が可能となる
The contact type image sensor of the present invention has a lower positional accuracy than the conventional one having substrates arranged in a staggered manner because there is no need to synthesize read signals based on scanning on two scanning lines. For example, 31 μm) can be set.

ここで、光電変換素子基板2として光電変換素子アレイ
に沿って共通電極を有するものを使用すると、その端部
で切断加工することが困難になるので、各光電変換素子
を駆動する一対の電極はそれぞれ独立したものを使用す
る方が好ましい。
Here, if a photoelectric conversion element substrate 2 having a common electrode along the photoelectric conversion element array is used, it will be difficult to cut the edges, so the pair of electrodes that drive each photoelectric conversion element will be It is preferable to use independent ones.

〔発明の効果〕〔Effect of the invention〕

以上説明した通り、本発明の密着型イメージセン”す°
およびその製造方法によれば、光電変換素子基板の端部
を所定の位置で切断した後この端部で隣接する光電変換
素子を画素密度に応じた間隔にして一直線上に配置する
ようにしたため、余分な信号処理の必要性を省き、副走
査方向のサイズの小型化を図り、製造上の寸法精度を容
易に之げることかできる。
As explained above, the close-contact image sensor of the present invention
According to the manufacturing method, the end of the photoelectric conversion element substrate is cut at a predetermined position, and then adjacent photoelectric conversion elements are arranged in a straight line at intervals corresponding to the pixel density at this end. It is possible to eliminate the need for extra signal processing, reduce the size in the sub-scanning direction, and easily achieve dimensional accuracy in manufacturing.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図(イ)、(ロ)は本発明の密着型イメージセンサ
の一実施例を示す説明図。第2図(イ)、(ロ)は本発
明の密着型イメージセンサの製造方法の一実施例を示す
説明図。第3図は第2図(イ)の実施例において使用さ
れる位置調整装置の説明図。 符号の説明 1−−−ベース部材   2−−一光電変換素子基板3
−・−光電変換素子      4−・−−−m−弾性
部材5−−−マイクロメータ 特許出願人  冨士ゼロックス株式会社代理人   弁
理士   平 1)忠 雄vE1図 (ロ) (ロ)
FIGS. 1A and 1B are explanatory diagrams showing an embodiment of the contact type image sensor of the present invention. FIGS. 2(A) and 2(B) are explanatory diagrams showing an embodiment of the method for manufacturing a contact type image sensor of the present invention. FIG. 3 is an explanatory diagram of a position adjustment device used in the embodiment of FIG. 2(A). Explanation of symbols 1 --- Base member 2 --- Photoelectric conversion element substrate 3
-・-Photoelectric conversion element 4-・---m-Elastic member 5---Micrometer Patent applicant Fuji Xerox Co., Ltd. Agent Patent attorney Taira 1) Tadao vE1 diagram (b) (b)

Claims (2)

【特許請求の範囲】[Claims] (1)画素密度に応じた間隔で直線状に配置された光電
変換素子アレイを有した複数の光電変換素子基板と、該
複数の光電変換素子基板を縦列配置して前記光電変換素
子アレイを直線状にして支持するベース部材とを備え、 前記ベース部材は所定の平面精度を有する 面上に前記複数の光電変換素子基板と直接接触して前記
複数の光電変換素子基板を支持し、前記複数の光電変換
素子基板は隣接する光 電変換素子基板の端部で隣接する光電変換素子が前記画
素密度に応じた間隔で位置することを特徴とする密着型
イメージセンサ。
(1) A plurality of photoelectric conversion element substrates having photoelectric conversion element arrays arranged linearly at intervals according to pixel density, and a plurality of photoelectric conversion element substrates arranged in tandem to form the photoelectric conversion element arrays in a straight line. a base member supporting the plurality of photoelectric conversion element substrates in direct contact with the plurality of photoelectric conversion element substrates on a surface having a predetermined planar accuracy, The photoelectric conversion element substrate is a contact type image sensor, wherein adjacent photoelectric conversion elements are located at the end portions of the adjacent photoelectric conversion element substrates at intervals corresponding to the pixel density.
(2)画素密度に応じた間隔で直線状に配置された光電
変換素子アレイを有した複数の光電変換素子基板の端部
を切断加工し、 前記複数の光電変換素子基板の隣接する端 部の隣接する光電変換素子が前記画素密度に応じた間隔
で位置するように縦列配置し、 前記複数の光電変換素子基板を一方の側面 より弾性的に押圧するとともにその他方の側面より位置
計測部材を介して前記複数の光電変換素子基板を押圧し
、 前記一方の側面の弾性力に抗して前記他方 の側面より押圧しながら前記位置計測部材の位置計測に
基づいて前記複数の光電変換素子基板を所定の位置に設
定した後前記ベース部材に固定することを特徴とする密
着型イメージセンサの製造方法。
(2) Cutting the ends of a plurality of photoelectric conversion element substrates having photoelectric conversion element arrays arranged linearly at intervals according to pixel density, and cutting the ends of adjacent ends of the plurality of photoelectric conversion element substrates. Adjacent photoelectric conversion elements are arranged in tandem so that they are located at intervals according to the pixel density, and the plurality of photoelectric conversion element substrates are elastically pressed from one side and pressed from the other side through a position measuring member. and press the plurality of photoelectric conversion element substrates by pressing the plurality of photoelectric conversion element substrates, and pressing the plurality of photoelectric conversion element substrates from the other side surface against the elastic force of the one side surface based on the position measurement of the position measurement member. A method of manufacturing a contact type image sensor, the method comprising: fixing the image sensor to the base member after setting the image sensor to the position of the base member.
JP61135814A 1986-06-11 1986-06-11 Contact type image sensor and its production Pending JPS62292070A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61135814A JPS62292070A (en) 1986-06-11 1986-06-11 Contact type image sensor and its production

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61135814A JPS62292070A (en) 1986-06-11 1986-06-11 Contact type image sensor and its production

Publications (1)

Publication Number Publication Date
JPS62292070A true JPS62292070A (en) 1987-12-18

Family

ID=15160432

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61135814A Pending JPS62292070A (en) 1986-06-11 1986-06-11 Contact type image sensor and its production

Country Status (1)

Country Link
JP (1) JPS62292070A (en)

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