JPS62290869A - Apparatus for producing hard carbon film - Google Patents
Apparatus for producing hard carbon filmInfo
- Publication number
- JPS62290869A JPS62290869A JP13341286A JP13341286A JPS62290869A JP S62290869 A JPS62290869 A JP S62290869A JP 13341286 A JP13341286 A JP 13341286A JP 13341286 A JP13341286 A JP 13341286A JP S62290869 A JPS62290869 A JP S62290869A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- hard carbon
- plasma
- carbon film
- reaction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910021385 hard carbon Inorganic materials 0.000 title claims abstract description 16
- 238000006243 chemical reaction Methods 0.000 claims abstract description 17
- 239000000463 material Substances 0.000 claims abstract description 11
- 230000003197 catalytic effect Effects 0.000 claims abstract description 8
- 150000002430 hydrocarbons Chemical class 0.000 claims abstract description 7
- 239000004215 Carbon black (E152) Substances 0.000 claims abstract description 6
- 229930195733 hydrocarbon Natural products 0.000 claims abstract description 6
- 238000004519 manufacturing process Methods 0.000 claims description 13
- 239000012528 membrane Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 9
- 229910052799 carbon Inorganic materials 0.000 abstract description 7
- 230000000694 effects Effects 0.000 abstract description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 6
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 abstract description 6
- 239000004020 conductor Substances 0.000 abstract description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052802 copper Inorganic materials 0.000 abstract description 4
- 239000010949 copper Substances 0.000 abstract description 4
- 230000015572 biosynthetic process Effects 0.000 abstract description 3
- 238000006555 catalytic reaction Methods 0.000 abstract description 2
- 238000010494 dissociation reaction Methods 0.000 abstract description 2
- 230000005593 dissociations Effects 0.000 abstract description 2
- 229910052697 platinum Inorganic materials 0.000 abstract description 2
- 229910052721 tungsten Inorganic materials 0.000 abstract description 2
- 238000005336 cracking Methods 0.000 abstract 1
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 20
- 239000010408 film Substances 0.000 description 17
- 238000010586 diagram Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 3
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 2
- 239000005977 Ethylene Substances 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- -1 carbon ions Chemical class 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
３、発明の詳細な説明
〔産業上の利用分野〕
この発明は、プラズマ化学気相成長法を利用した硬質炭
素膜製造装置誓こ関するものである。[Detailed Description of the Invention] 3. Detailed Description of the Invention [Field of Industrial Application] This invention relates to a hard carbon film manufacturing apparatus using plasma chemical vapor deposition.
第２図は１例えば雑誌Ｔｈ１ｎ ５ｏｌｉｄ Ｆｉ＆ｚ
ｓ ｍ ３５巻（１９７６年発行）第２５５頁に示され
た従来の直流プラズマ化学気相成長法を用いた硬質炭素
膜製造装置の説明図であり１図ｆこおいて、（１） Ｌ
Ｃ炭化水素系の反応ガスを供給するガス供給手段、（２
）は真空排気を行なうためのガス排気装置、（３）は化
学気相反応を行なうための反応容器、（５）は電極間ｌ
こ電圧を印加するための￥を源、（６）は反応ガスプラ
ズマ。Figure 2 shows 1For example, magazine Th1n 5solid Fi&z
s m Volume 35 (published in 1976), page 255, is an explanatory diagram of a hard carbon film manufacturing apparatus using the conventional DC plasma chemical vapor deposition method, and Fig. 1f shows (1) L
C gas supply means for supplying a hydrocarbon-based reaction gas, (2
) is a gas exhaust device for performing vacuum evacuation, (3) is a reaction vessel for performing a chemical vapor phase reaction, and (5) is a gas exhaust device for performing vacuum evacuation.
The source for applying this voltage is (6) the reactive gas plasma.
α１は基板、 ａ−ａは該基板ａｑ上に堆積した硬質炭
素膜、（１２ａ）、（１２ｂ）は例スば銅などの導電性
材料ｆこより構成される上部を極、下部電極である。α1 is a substrate, a-a is a hard carbon film deposited on the substrate aq, (12a) and (12b) are upper and lower electrodes made of conductive material f such as copper, for example.
次に動作コこついて説明する。ガス供給手段Ｃ１）から
例えばメタン、エチレンなどの炭化水素系カスをガス排
気装置（２）を動作させつつ一定流量反応容器（３）・
＼導入し、該反応容器（３）内の圧力を一定に保持する
。次に例えば銅などの上部電極（１２ａ） 、下部１！
極（１２１））間に、電源（５）を調整して、所定の電
圧を印加することにより、前記上部′ＪＬ極（１２ａ）
、″Ｆ部電極（１２ｂ）間１こ放電を生じさせ、反応ガ
スプラズマ（６）を発生させる。Next, I will explain how it works. While operating the gas exhaust device (2), a constant flow rate of hydrocarbon residues such as methane and ethylene is supplied from the gas supply means C1) to the reaction vessel (3).
\ and keep the pressure in the reaction vessel (3) constant. Next, an upper electrode (12a) of copper, for example, and a lower electrode 1!
By adjusting the power supply (5) and applying a predetermined voltage between the poles (121), the upper 'JL pole (12a)
, ``A discharge is generated between the F part electrodes (12b) and a reactive gas plasma (6) is generated.
該反応ガスプラズマ（６）中で生成した励起状態の炭素
原子、あるいは炭素イオン等の炭素源を下部電極（１２
ｂ）上に設置した基板ａＩ上ｔこ堆積させ硬質炭素膜０
υ７２−成長させる。A carbon source such as excited carbon atoms or carbon ions generated in the reactive gas plasma (6) is connected to the lower electrode (12).
b) A hard carbon film is deposited on the substrate aI placed above.
υ72-grow.
従来の硬質炭素膜製造装置は、電極材料として反応性に
乏しい鋼などの４屯性材料が用いられているため、炭素
源を生成させるために高エネルギーのプラズマを発生さ
せることが必要で、また膜生成速度が遅υ）などの問題
点があった。Conventional hard carbon film manufacturing equipment uses a 4-layer material such as steel with poor reactivity as an electrode material, so it is necessary to generate high-energy plasma to generate a carbon source. There were problems such as slow film formation rate υ).
この発明（工、上記のような問題点を解消するためにな
されたもので、低エネルギーのプラズマで炭素源を生成
できるととも１こ、膜生成速度が速い硬質炭素膜製造装
置を得ることを目的とする。This invention was made to solve the above-mentioned problems, and aims to provide a hard carbon film production device that can generate a carbon source with low-energy plasma and has a high film production rate. purpose.
この発明の硬質炭素膜製造ｇ装置に、互いに対向して投
けられた上部３よび上部電極、上記間を極間に放電を発
生させるための電源、上記両電極を内包する反応容器、
この反応容器に炭化水素系ガスを供給するガス供給手段
を備えるものに３いて、上記両電啄の内６）少なくとも
一方を触瀉作用を持つ材料で構成していることを特徴と
するものである。The hard carbon film manufacturing apparatus of the present invention includes an upper part 3 and an upper electrode placed facing each other, a power source for generating a discharge between the electrodes, and a reaction vessel containing both the electrodes.
3) The reactor is equipped with a gas supply means for supplying hydrocarbon gas to the reaction vessel, and 6) at least one of the above-mentioned batteries is made of a material having an catalytic action. be.
この発明Ｉこおける触謀作用を持つ材料は、低エネルギ
ーで反応ガスの分解を促進するため、膜生成速度を速く
する。The catalytic material in this invention I accelerates the decomposition of the reactant gas with low energy, thereby increasing the rate of film formation.
以下、この発明の一実施例を図についで説明する。第１
図はこの発明０）−実施例のｆｌｙ！質炭素膜製造装置
の説明図であり１図に３いて、（１）〜（３）は第２図
と同様であり、（４ａ）は触Ｓ作用の強い材料力Ｓらな
る上部電極、（４ｂ）は導電性材料力）らなる下部電極
、（５）は上記上部電極（４ａ） 、 Ｆ部電極（４ｂ
）間に電圧を印加するための電源、（６）は上記上部電
極（４ａ） 、下部電極（４ｂ）間に発生する反応ガス
プラズマ、（７ａ） 、 （７ｂ）は上記上部’ｔ 極
（４ａ） 、下部電極（４ｂ）の背面（ζコーティング
された絶縁性薄膜、（８ａ）は上記上部電極（４ａ）を
加熱するための上部ヒータ、（８ｂ）は下部ヒータ、（
９ａ） 、 （９ｂ）は温度コントローラ、α０は上記
上部電極（４ｂ）上ｌこ設置された基板であり、該基板
αｑは上記５部ヒータ（８ｂ）により加熱さｎる。０υ
は上記基板αＱ上に堆積した硬質炭素膜で、５−する。An embodiment of the present invention will be described below with reference to the drawings. 1st
The figure shows this invention 0) - Example fly! 1 is an explanatory diagram of a carbon film manufacturing apparatus, (1) to (3) are the same as in FIG. 4b) is a lower electrode made of conductive material (4b), (5) is the upper electrode (4a), F part electrode (4b)
), (6) is a reactive gas plasma generated between the upper electrode (4a) and the lower electrode (4b), (7a) and (7b) are the upper electrode (4a), ), the back surface of the lower electrode (4b) (ζ-coated insulating thin film, (8a) is an upper heater for heating the upper electrode (4a), (8b) is a lower heater, (
9a) and (9b) are temperature controllers, α0 is a substrate placed on the upper electrode (4b), and the substrate αq is heated by the five-part heater (8b). 0υ
is a hard carbon film deposited on the substrate αQ, 5-.
次；こ動作について説明する。ガス供給手段（１）から
例えば、メタン、エチレンなどの炭化水素系ガスをガス
排気装置 ＋２＋ ｆ動作させながら反応容器（３）内
−＼導入し、該反応容器（３）内の圧力を一定に保持す
る。次（こ、例えばタンゲスラン、ニッケル、白金など
の触謀作用の強い材料からなる上部成極（４ａ）と例え
ば銅などの導゛４注材料からなる上部電極（４ｂ）さの
間；こＩ九源］５）を調整し、所定の′電圧をかけるこ
と（こより、放ｉ！！を土じさせ、反応ガスプラズマ（
６）を発生させる。この際、放電による自己発Ｍ作用に
より上部成極（４ａ）表面は高温状態となり、触謀反応
が活性比し、反応カスの解離が促進さ几る。また、む５
作用（こよつ、反応ガスの分解エネルギーが低−ドする
１こめ、低エネルギーのプラズマを発生させるだけで反
応が通行する。次４こ、Ｌ記上部ルｐｊ （４ａ） 、
Ｆ都電ｉ （４ｂ）の背面に例えば、セラミック等の
絶縁性薄膜（７ａ） 、 （７ｂ）をコーティングし、
上部ヒータ（８ａ） 、下部ヒータ（８ｂ）を上記絶縁
性薄膜（７ａ） 、 （７ｂ）の背面に固着し、温度コ
ントローラ（９ａ） 、 （９ｂ） ｌこよって制御す
ることにより、上記上部心事（４ａ）の触謀反応を活性
化するとともに、上部逼ｉ （４ｂ） 、ｈに設置され
た基板００の温度を一定に保持し、該基板ａＱ上に効率
よく硬質炭素膜ａυを堆積させる。Next, this operation will be explained. A hydrocarbon gas such as methane or ethylene is introduced from the gas supply means (1) into the reaction vessel (3) while operating the gas exhaust device, and the pressure inside the reaction vessel (3) is kept constant. Hold. Next (between the upper electrode (4a) made of a highly conductive material such as tungsten, nickel, platinum, etc. and the upper electrode (4b) made of a conductive material such as copper; source] 5), apply a predetermined voltage (by causing the emission!!), and generate a reactive gas plasma (
6). At this time, the surface of the upper polarization (4a) is brought into a high temperature state due to the self-generating M action caused by the discharge, the catalytic reaction becomes more active, and the dissociation of the reaction scum is promoted. Also, Mu5
Effect (1) Since the decomposition energy of the reaction gas is low, the reaction can proceed by simply generating a low-energy plasma.
For example, an insulating thin film (7a), (7b) made of ceramic or the like is coated on the back side of F Toden i (4b),
The upper heater (8a) and the lower heater (8b) are fixed to the back surfaces of the insulating thin films (7a) and (7b), and are controlled by the temperature controllers (9a) and (9b). While activating the tactile reaction of 4a), the temperature of the substrate 00 placed at the upper portions i (4b) and h is maintained constant, and the hard carbon film aυ is efficiently deposited on the substrate aQ.
なお、上記実施例では２反応ガスプラズマ（６）を発生
させるための電源「５）として直流電源を設けにもυ）
を示したが、交流成像で・５つでもよい。In addition, in the above embodiment, a DC power source is provided as the power source "5)" for generating the two-reactant gas plasma (6).
, but in AC imaging, five may be used.
また、上部ｒご７隘（４ａ） ｆｔ１ｌｌ ４こ触謀作
用の強い材料を用いた場合ＥこついＣ説明し１こが、上
部１！＄１（４ｂ）側、あるい（ま、土都電田（４ａ）
、Ｆ部成極（４ｂ）両側に触謀作用の強い材料を用いて
もよく、上記実施例と同様σ）幻呆を奏する。Also, if you use a material with a strong tactile effect, the upper part will be difficult to explain. $1 (4b) side, or (ma, Doto Denden (4a)
, a material with a strong tactile action may be used on both sides of the F section polarization (4b), and the same effect as in the above embodiments σ) will occur.
さらｔこ、上記実施例でに、温度コントローラーを上部
３よび上部′ＩＪｌりに設〆す１こ場合（こついて説明
し１こが、触零作用を持つ材料で構成された１１こ温度
コントローラーを設ければ所期の目的を達成できる。In addition, in the above embodiment, if the temperature controller is installed at the upper part 3 and the upper part 1, the temperature controller 11 made of a material with a tactile effect will be explained. If you set this, you can achieve the desired purpose.
以上説明したとおり、この発明は、互いに対向して設け
られた上部および下部電極、上記両電極間に放電を発生
させるための電源、上記両電極を内包する反応容器、こ
の反応容器に炭化水素系ガスを供給するガス供給手段を
備えるものにおいて、上記両電極の内の少なくとも一方
を触媒作用を持つ材料で構成していることを特徴とする
ものを用いることにより、低エネルギープラズマで炭素
源を生成できるととも−こ、膜生成速度が速い硬質炭素
膜製造装置を得ることができる。As explained above, the present invention includes upper and lower electrodes provided opposite to each other, a power source for generating a discharge between the two electrodes, a reaction vessel containing the two electrodes, and a hydrocarbon-based In a device equipped with a gas supply means for supplying gas, at least one of the above-mentioned electrodes is made of a material having a catalytic action, thereby generating a carbon source with low energy plasma. If this is possible, a hard carbon film manufacturing apparatus with a high film production rate can be obtained.
第り図はこの発明の一実施例の硬質炭素膜製造装置の説
明図、第２図は従来の硬質炭素膜製造装置の説明図であ
る。
図φこおいて、（１）はガス供給手段、（２）は反応容
器、Ｃ１ｋ） 、 （４ｂ） ｉま触媒作用を持つ材料
で構成された上部および下部電極である。
なお、各図中同一符号は同一、又は相当部分を示す。
第１図
１： 〃゛スイ共弁争手反
Ｊ：及た容豚FIG. 2 is an explanatory diagram of a hard carbon film manufacturing apparatus according to an embodiment of the present invention, and FIG. 2 is an explanatory diagram of a conventional hard carbon film manufacturing apparatus. In the figure φ, (1) is a gas supply means, (2) is a reaction vessel, C1k), (4b) i are upper and lower electrodes made of a material having a catalytic action. Note that the same reference numerals in each figure indicate the same or equivalent parts. Figure 1 1: ゛Sui Joint Venture Dispute Anti-J: Atata Yobuta
Claims (2)
上記両電極間に放電を発生させるための電源、上記両電
極を内包する反応容器、この反応容器に炭化水素系ガス
を供給するガス供給手段を備えるものにおいて、上記両
電極の内の少なくとも一方を触媒作用を持つ材料で構成
していることを特徴とする硬質炭素膜製造装置。(1) Upper and lower electrodes provided opposite each other;
A device comprising a power source for generating a discharge between the two electrodes, a reaction vessel containing the two electrodes, and a gas supply means for supplying a hydrocarbon gas to the reaction vessel, wherein at least one of the two electrodes is A hard carbon membrane manufacturing device characterized by being made of a material with catalytic action.
る特許請求の範囲第１項記載の硬質炭素膜製造装置。(2) The hard carbon film manufacturing apparatus according to claim 1, which has a temperature controller for controlling the temperature of the electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13341286A JPS62290869A (en) | 1986-06-09 | 1986-06-09 | Apparatus for producing hard carbon film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13341286A JPS62290869A (en) | 1986-06-09 | 1986-06-09 | Apparatus for producing hard carbon film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62290869A true JPS62290869A (en) | 1987-12-17 |
Family
ID=15104162
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13341286A Pending JPS62290869A (en) | 1986-06-09 | 1986-06-09 | Apparatus for producing hard carbon film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62290869A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5306348A (en) * | 1990-12-24 | 1994-04-26 | General Electric Company | Metal growth accelerator shell for the chemical vaporization deposition of diamond |
| JP2017514985A (en) * | 2014-03-05 | 2017-06-08 | ロータス アプライド テクノロジー エルエルシーＬｏｔｕｓ Ａｐｐｌｉｅｄ Ｔｅｃｈｎｏｌｏｇｙ， Ｌｌｃ | Electrically and chemically active adsorption layers for plasma electrodes. |
-
1986
- 1986-06-09 JP JP13341286A patent/JPS62290869A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5306348A (en) * | 1990-12-24 | 1994-04-26 | General Electric Company | Metal growth accelerator shell for the chemical vaporization deposition of diamond |
| JP2017514985A (en) * | 2014-03-05 | 2017-06-08 | ロータス アプライド テクノロジー エルエルシーＬｏｔｕｓ Ａｐｐｌｉｅｄ Ｔｅｃｈｎｏｌｏｇｙ， Ｌｌｃ | Electrically and chemically active adsorption layers for plasma electrodes. |
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