JPS62290585A - Photo-recording medium - Google Patents
Photo-recording mediumInfo
- Publication number
- JPS62290585A JPS62290585A JP61135209A JP13520986A JPS62290585A JP S62290585 A JPS62290585 A JP S62290585A JP 61135209 A JP61135209 A JP 61135209A JP 13520986 A JP13520986 A JP 13520986A JP S62290585 A JPS62290585 A JP S62290585A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- zinc sulfide
- recording
- photo
- sulfide thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010408 film Substances 0.000 claims abstract description 49
- 239000010409 thin film Substances 0.000 claims abstract description 44
- 239000005083 Zinc sulfide Substances 0.000 claims abstract description 32
- 229910052984 zinc sulfide Inorganic materials 0.000 claims abstract description 32
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 claims abstract description 31
- 230000003287 optical effect Effects 0.000 claims description 22
- 229920000307 polymer substrate Polymers 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 13
- 239000007789 gas Substances 0.000 abstract description 13
- 239000001301 oxygen Substances 0.000 abstract description 13
- 229910052760 oxygen Inorganic materials 0.000 abstract description 13
- 230000004888 barrier function Effects 0.000 abstract description 11
- 238000000034 method Methods 0.000 abstract description 9
- 239000000758 substrate Substances 0.000 abstract description 9
- 230000001681 protective effect Effects 0.000 abstract description 8
- 230000007774 longterm Effects 0.000 abstract description 4
- 230000006866 deterioration Effects 0.000 abstract description 3
- 230000000694 effects Effects 0.000 abstract description 2
- 239000000126 substance Substances 0.000 abstract description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 abstract 1
- 238000007733 ion plating Methods 0.000 abstract 1
- 238000001771 vacuum deposition Methods 0.000 abstract 1
- 239000011701 zinc Substances 0.000 abstract 1
- 229910052725 zinc Inorganic materials 0.000 abstract 1
- 230000035699 permeability Effects 0.000 description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 11
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 9
- 239000004926 polymethyl methacrylate Substances 0.000 description 9
- 238000002834 transmittance Methods 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012770 industrial material Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000006722 reduction reaction Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
- B41M5/00—Duplicating or marking methods; Sheet materials for use therein
- B41M5/26—Thermography ; Marking by high energetic means, e.g. laser otherwise than by burning, and characterised by the material used
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Thermal Transfer Or Thermal Recording In General (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
Abstract
Description
【発明の詳細な説明】
３、発明の詳細な説明
（産業上の利用分野）
本発明は、光学的な情報の記録再生に用いる光記録媒体
に関するものである。Detailed Description of the Invention 3. Detailed Description of the Invention (Field of Industrial Application) The present invention relates to an optical recording medium used for recording and reproducing optical information.
（従来の技術）（発明が解決しようとする問題点）レー
ザー光を用いて情報信号の記録再生を行う光記録媒体は
、高密度の記録媒体として、近年。(Prior Art) (Problems to be Solved by the Invention) Optical recording media that record and reproduce information signals using laser light have recently become popular as high-density recording media.
注目を集めている（たとえば、工業材料、第３２巻、第
８号、１９８４年、３８〜４４頁）。光記録媒体は、従
来、透明性の優れたポリメチルメタクリレート（以下Ｐ
Ｍ Ｍ Ａという）やポリカーボネート（以下ＰＣと
いう）などの高分子材料を基板として用いることが多く
、基板上に蒸着により記録膜を形成し、さらに保護膜と
して、ＰＭＭＡ板を貼り合わせるか、エポキシ樹脂など
のコーテイング膜を設けている。It is attracting attention (for example, Industrial Materials, Vol. 32, No. 8, 1984, pp. 38-44). Optical recording media have traditionally been made of polymethyl methacrylate (hereinafter referred to as P), which has excellent transparency.
Polymer materials such as MMA) and polycarbonate (hereinafter referred to as PC) are often used as substrates, and a recording film is formed on the substrate by vapor deposition, and as a protective film, a PMMA plate is laminated or epoxy resin is used. Coating films such as these are provided.
前記の記録媒体においては、基板や保護膜が有機高分子
であるために、ガラスなどに比べて水蒸気や気体の透過
が大きく、基板や保護膜を透過した水蒸気や酸素などが
、記録膜の成分と反応することにより、記録膜の変質、
劣化をまねくという欠点がある。このような欠点を解決
するためには。In the above-mentioned recording media, since the substrate and protective film are made of organic polymers, water vapor and gas permeate through them more than glass, and the water vapor and oxygen that have passed through the substrate and protective film are absorbed by the components of the recording film. By reacting with
It has the disadvantage of causing deterioration. In order to solve these shortcomings.
ガスバリヤ−性（水蒸気や酸素を通しにくい性質）を有
する無機材料の保護膜を用いる方法がある。There is a method of using a protective film made of an inorganic material that has gas barrier properties (property that prevents water vapor and oxygen from passing through).
このような保護膜としては、ＳｉＯ□膜等が挙げられる
が、クランクが生じやすく充分なガスバリヤ−性が得ら
れていない。Examples of such a protective film include a SiO□ film, but it tends to cause cranking and does not provide sufficient gas barrier properties.
本発明の゛目的は、このような従来技術の欠点を解消し
、耐湿性に優れ、長期安定性を有する光記録媒体を提供
することである。An object of the present invention is to eliminate the drawbacks of the prior art and provide an optical recording medium that has excellent moisture resistance and long-term stability.
（問題点を解決するための手段）
本発明者らは、このような問題点を解決するために鋭意
研究の結果、硫化亜鉛薄膜を形成することにより、耐湿
性に非常に優れ、長期安定性を有する光記録媒体が得ら
れることを見出し１本発明に到達した。(Means for Solving the Problems) In order to solve these problems, the inventors of the present invention have conducted intensive research and found that by forming a zinc sulfide thin film, the film has excellent moisture resistance and long-term stability. The present invention was achieved by discovering that an optical recording medium having the following properties can be obtained.
すなわち２本発明は、透明な高分子の基板上に光記録膜
を設けて成る光記録媒体において、上記光記録膜の片面
または両面に硫化亜鉛薄膜層を形成したことを特徴とす
る光記録媒体を提供するものである。That is, the present invention provides an optical recording medium comprising an optical recording film provided on a transparent polymer substrate, characterized in that a zinc sulfide thin film layer is formed on one or both sides of the optical recording film. It provides:
硫化亜鉛薄膜層は、高度のガスバリヤ−性を有する上に
、透明性に優れ、化学的に安定で、かつ機械的強度も強
いので、記録膜の保護膜に非常に通している。The zinc sulfide thin film layer has a high degree of gas barrier property, excellent transparency, chemical stability, and strong mechanical strength, so that it is highly permeable to the protective film of the recording film.
たとえば、硫化亜鉛薄膜層を高分子の基板上に形成した
ものと、高分子の基板そのものの水蒸気透過率と酸素透
過率とを測定すると、硫化亜鉛薄膜層を形成した方が、
水蒸気透過率、酸素透過率ともに著しく小さくなる。こ
のように、高度のガスバリヤ−性を有する硫化亜鉛薄膜
を記録膜の保。For example, when measuring the water vapor permeability and oxygen permeability of a zinc sulfide thin film layer formed on a polymer substrate and the polymer substrate itself, it is found that forming a zinc sulfide thin film layer is better.
Both water vapor permeability and oxygen permeability become significantly smaller. In this way, a zinc sulfide thin film with high gas barrier properties is used to protect the recording film.
護膜として用いることにより、記録膜が水蒸気や酸素と
接触することにより劣化するのを効果的に防止すること
が出来る。硫化亜鉛薄膜層の膜厚が０．０１μｍ以下で
はガスバリヤ−性が充分ではないので、硫化亜鉛薄膜層
の膜厚は０．１．ｉｊｍ以上が好ましく、実用的な範囲
は０．０１〜１．０μｍである。１．０μｍ以上の場合
には、膜厚の増加の割にはガスバリヤ−性は向上しない
。By using it as a protective film, it is possible to effectively prevent the recording film from deteriorating due to contact with water vapor or oxygen. If the thickness of the zinc sulfide thin film layer is 0.01 μm or less, gas barrier properties will not be sufficient. ijm or more is preferable, and the practical range is 0.01 to 1.0 μm. If the thickness is 1.0 μm or more, the gas barrier properties will not improve despite the increase in film thickness.
硫化亜鉛薄膜層を形成する方法としては、蒸着法、イオ
ンブレーティング法、スパッタリング法などの真空薄膜
形成法を用いることが出来る。薄膜層を形成するのは、
場合によっては記録膜の片面だけでもよいが、第１図に
示すように記録膜の両面に形成したほうが効果が大きい
。必要ならば外側の硫化亜鉛薄膜層上にエポキシ樹脂な
どの樹脂コーテイング膜を形成しても良いし、ＰＭＭＡ
板などを貼り合わせても良い。As a method for forming the zinc sulfide thin film layer, a vacuum thin film forming method such as a vapor deposition method, an ion blating method, or a sputtering method can be used. The thin film layer is formed by
In some cases, it may be necessary to form the film on only one side of the recording film, but it is more effective to form it on both sides of the recording film as shown in FIG. If necessary, a resin coating film such as epoxy resin may be formed on the outer zinc sulfide thin film layer.
You can also attach boards etc.
本発明の硫化亜鉛薄膜層を備えた光記録媒体は。An optical recording medium comprising a zinc sulfide thin film layer according to the present invention.
光記録膜として Ｔｅ、 Ｔｅ−Ｔｅ０ｚ＋ Ｓ ｂ
、 Ｓｅ。As an optical recording film Te, Te-Te0z+ S b
, Se.
ＢｉまたはＡ２などの蒸着膜や、あるいはホトクロミッ
ク材料、染料などの有機記録材料を用いる場合にも適用
可能である。必要ならば、上記の光記録膜とともにＡ７
ｉなどの金属反射膜を設けることも可能である。It is also applicable when using a vapor deposited film such as Bi or A2, or an organic recording material such as a photochromic material or dye. If necessary, add A7 along with the above optical recording film.
It is also possible to provide a metal reflective film such as i.
（実施例） 次に１本発明を実施例によって具体的に説明する。(Example) Next, one embodiment of the present invention will be specifically explained using examples.
実施例１
厚さ１．２ｕのＰＭＭＡ板の片面に、厚さ０．１ ｐｍ
の硫化亜鉛薄膜層をＲＦビイオンブレーティング法より
形成した。すなわち、あらかじめ、基板と硫化亜鉛焼結
体とを所定の位置にセットした真空装置内をＩ Ｘ １
０−’Ｔｏｒｒまで排気したのち、アルゴンガスを２
Ｘ １０−’Ｔｏｒｒ導入し、高周波プラズマ（１３，
５６Ｍｌｌｚ、 ５０ Ｗ）を発生させ、電子銃によ
り硫化亜鉛焼結体を加熱蒸発させて、１０人／Ｓの成膜
速度で硫化亜鉛薄膜層を形成した。Example 1 A 0.1 pm thick film was applied to one side of a 1.2 u thick PMMA plate.
A zinc sulfide thin film layer was formed using the RF bioion blating method. That is, I
After exhausting to 0-' Torr, argon gas was
X 10-' Torr was introduced, and high-frequency plasma (13,
The zinc sulfide sintered body was heated and evaporated using an electron gun to form a zinc sulfide thin film layer at a deposition rate of 10 persons/S.
この試料（魚１）について、水蒸気透過率および酸素透
過率を測定した。水蒸気透過率は、パーマトラン−Ｗｌ
（モダンコントロール社製）を用いて４０℃、９０
％ＲＨの条件で、酸素透過率は。The water vapor permeability and oxygen permeability of this sample (Fish 1) were measured. Water vapor transmission rate is Permatran-Wl
(manufactured by Modern Control) at 40°C and 90°C.
Under the condition of %RH, the oxygen permeability is.
オフストラン１００ （モダンコントロール社製）を用
いて２０℃、１００％ＲＨの条件で測定した。Measurement was performed using Ofstran 100 (manufactured by Modern Control) at 20° C. and 100% RH.
結果は、第１表に示す。The results are shown in Table 1.
第 １ 表
比較例として、厚さ１．２鶴のＰＭＭＡ板上に硫化亜鉛
薄膜層の代わ−りに厚さ０．１μｍのＳｉｎｇ薄膜層を
形成した試料（！１１［Ｌ２）、″ａ膜層を形成しない
厚さ１．２１ｍのＰＭＭＡ板（階３）について同様に水
蒸気透過率、酸素透過率を測定した。結果は。Table 1 As a comparative example, a sample (!11[L2), "a film" was prepared in which a 0.1 μm thick Sing thin film layer was formed on a 1.2 mm thick PMMA plate instead of a zinc sulfide thin film layer. The water vapor permeability and oxygen permeability were similarly measured for a 1.21 m thick PMMA board (floor 3) without forming a layer.The results are as follows.
第１表に示す。Shown in Table 1.
ここで、５ｉＯｚ薄膜層はＲＦビイオンブレーティング
法より形成した。真空装置内をｌＸｌ０−５Ｔｏｒｒま
で排気したのち、酸素ガスを２ Ｘ １０−’Ｔｏｒｒ
導入し、高周波プラズマ（１３，５６ＭＨｚ、 ５０
Ｗ）を発生させ、電子銃により５ｉＣｈ焼結体を加熱蒸
発させて、１０人／Ｓの成膜速度でＳ ｉ Ｏを薄膜層
を形成した。Here, the 5iOz thin film layer was formed by RF bioion blating method. After evacuating the inside of the vacuum device to 1X10-5 Torr, oxygen gas was evacuated to 2X10-'Torr.
high frequency plasma (13,56MHz, 50
W) was generated and the 5iCh sintered body was heated and evaporated using an electron gun to form a thin film layer of S i O at a film formation rate of 10 persons/S.
硫化亜鉛薄膜層を形成した試料（Ｎｌｌｌ）は、薄膜層
を形成しない試料（磁３）に比べ水蒸気透過率、酸素透
過率ともに非常に小さくなっており。The sample with a zinc sulfide thin film layer (Nllll) had significantly lower water vapor permeability and oxygen permeability than the sample with no thin film layer (Magnetic 3).
ガスバリヤ−性に優れていることがわかる。また。It can be seen that it has excellent gas barrier properties. Also.
ＳｉＯ□薄膜層を形成した試料（Ｉｌｈ ２ ’）と比
較しても優れている。このことから、硫化亜鉛薄膜はガ
スバリヤ−性に優れており、したがって、水蒸気や酸素
から記録膜を効果的に保護することが証明された。It is also superior to the sample (Ilh 2 ') in which a SiO□ thin film layer is formed. This proves that the zinc sulfide thin film has excellent gas barrier properties and therefore effectively protects the recording film from water vapor and oxygen.
さらに、厚さ１．２ＨのＰＭＭＡ板の片面に、硫化亜鉛
薄膜層、Ｔｅ−Ｔｅ○２記録膜、硫化亜鉛薄膜層を順次
形成して本発明の光記録媒体を得た。Furthermore, a zinc sulfide thin film layer, a Te-Te*2 recording film, and a zinc sulfide thin film layer were sequentially formed on one side of a 1.2H thick PMMA plate to obtain an optical recording medium of the present invention.
それぞれの膜の膜厚は、すべて０．１μｍとなるように
作られた。硫化亜鉛薄膜層の形成はＲＦビイオンブレー
ティング法用いた。Ｔｅ−Ｔｅ０□記録膜は、真空蒸着
法により形成するため、真空装置内を３ Ｘ １０ ”
’Ｔｏｒｒまで排気したのち、タングステンボートに通
電加熱してＴｅＯ□粉末を蒸発させた。蒸発時に、タン
グステンボートとＴｅＯｘ界面で還元反応が生じ、Ｔｅ
ｎｔの酸素が一部除かれ。The thickness of each film was made to be 0.1 μm. The zinc sulfide thin film layer was formed using the RF bioion blating method. Since the Te-Te0□ recording film is formed by vacuum evaporation, the space inside the vacuum apparatus is 3 x 10''.
After evacuation to 'Torr, the tungsten boat was heated with electricity to evaporate the TeO□ powder. During evaporation, a reduction reaction occurs at the interface between the tungsten boat and TeOx, and Te
Some of the nt oxygen is removed.
Ｔｅ−Ｔｅ０□膜を得ることが出来た。A Te-Te0□ film could be obtained.
このようにして得られた本発明の光記録媒体（Ｉｌ＆１
４）を、６０℃、９０％ＲＨの環境下に放置し、８３０
ｎｍにおける光線透過率の変化を測定することにより、
耐湿度特性を求めた。結果を第２図に示す。図において
、縦軸は光線透過率の変化で、初期値をＴｏ、放１時間
後の光線透過率をＴＸとした場合、ＴＸ／Ｔｏで表され
た値である。The optical recording medium of the present invention thus obtained (Il&1
4) was left in an environment of 60°C and 90% RH, and
By measuring the change in light transmittance in nm,
The humidity resistance characteristics were determined. The results are shown in Figure 2. In the figure, the vertical axis represents the change in light transmittance, which is a value expressed as TX/To, where To is the initial value and TX is the light transmittance after 1 hour of release.
また比較例として、厚さ１，２ＤのＰＭＭＡ板上に、硫
化亜鉛薄膜層の代わりに、厚さ０．１μｍのＳｉ０ｇ薄
膜を酸素プラズマ（１３，５６ＭＨｚ、 ５０Ｗ）を
発生させたＲＦビイオンブレーティング法形成したもの
（磁５）、厚さ１．２ｍｍのＰ Ｍ Ｍ Ａ板上に記録
膜だけを形成したもの（患６）について。As a comparative example, instead of the zinc sulfide thin film layer, a SiOg thin film with a thickness of 0.1 μm was placed on a PMMA plate with a thickness of 1.2D using RF bioion brating in which oxygen plasma (13.56MHz, 50W) was generated. (Magnetic 5), and one in which only the recording film was formed on a PMMA plate with a thickness of 1.2 mm (Magnetic 6).
同様に耐湿度特性を求めた。結果を第２図に示す。Humidity resistance characteristics were determined in the same manner. The results are shown in Figure 2.
図から明らかなように２本発明の硫化亜鉛薄膜層を設け
た光記録媒体は、光線透過率の経時変化が少なく耐湿性
に優れることがわかる。これは、硫化亜鉛薄膜がガスバ
リヤ−性に優れ、効果的に記録膜を保護するためである
。As is clear from the figure, the optical recording medium provided with the zinc sulfide thin film layer of the present invention shows little change in light transmittance over time and is excellent in moisture resistance. This is because the zinc sulfide thin film has excellent gas barrier properties and effectively protects the recording film.
実施例２
厚さ１．２鶴のＰＭＭＡ基板上に、実施例１と同様にし
て硫化亜鉛薄膜、Ｔｅ Ｔｅ０ｚ薄膜、硫化亜鉛薄膜
を順次形成した。この試料について記録実験を行った。Example 2 A zinc sulfide thin film, a Te Te0z thin film, and a zinc sulfide thin film were sequentially formed in the same manner as in Example 1 on a PMMA substrate having a thickness of 1.2 mm. A recording experiment was conducted on this sample.
半導体レーザ光を単一周波数５ＭＨｚで変調し。Semiconductor laser light is modulated at a single frequency of 5MHz.
照射パワー８ｍＷで１８０Ｏｒｐｍで回転するディスク
面を照射して記録を行った。再生時には。Recording was performed by irradiating the disk surface rotating at 180 rpm with an irradiation power of 8 mW. when playing.
１ｍＷのレーザ光を用いた。A 1 mW laser beam was used.
スペクトルアナライザーを用いてＣＮ比を測定した結果
、５８ｄＢのＣＮ比が得られた。この試料を４０℃、９
０％ＲＨの条件下で２０００時間放置したのちＣＮ比の
測定を行ったところ、はとんど変化がなかった。As a result of measuring the CN ratio using a spectrum analyzer, a CN ratio of 58 dB was obtained. This sample was heated at 40℃, 9
When the CN ratio was measured after being left for 2000 hours under 0% RH conditions, there was almost no change in the CN ratio.
比較のため、硫化亜鉛薄膜のかわりにＳ ｉ Ｏｚ薄膜
を用いた試料および基板の上に記録膜だけを形成した試
料について同様に記録実験を行ったところ、ＣＮ比の初
期値は、それぞれ５７ｄＢ、５９ｄＢであり、４０°Ｃ
１９０％ＲＨの条件下で２０００時間放置後のＣＮ比は
、それぞれ５０ｄＢ以下、４０ｄＢ以下であった。For comparison, similar recording experiments were conducted on a sample using a SiOz thin film instead of the zinc sulfide thin film and a sample with only a recording film formed on the substrate, and the initial values of the CN ratio were 57 dB and 57 dB, respectively. 59dB and 40°C
The CN ratio after being left for 2000 hours under the condition of 190% RH was 50 dB or less and 40 dB or less, respectively.
（発明の効果） 本発明によれば、光記録膜の片面または両面に。(Effect of the invention) According to the invention, on one or both sides of the optical recording film.
ガスバリヤ−性、透明性に優れた硫化亜鉛薄膜層を形成
することにより、耐湿性、長期安定性の向上した光記録
媒体を提供することが出来る。By forming a zinc sulfide thin film layer with excellent gas barrier properties and transparency, it is possible to provide an optical recording medium with improved moisture resistance and long-term stability.
第１図は１本発明の光記録媒体の一例の態様を示す断面
図である。第２図は１本発明の光記録媒体および比較例
の劣化試験における光線透過率の変化を示すグラフであ
る。
１・・・−・−・・基 板
２、 ４ − 硫化亜鉛薄膜層
３−・〜・・・・・−光記録膜FIG. 1 is a sectional view showing an embodiment of an optical recording medium according to the present invention. FIG. 2 is a graph showing changes in light transmittance in a deterioration test of the optical recording medium of the present invention and a comparative example. 1...--Substrate 2, 4-Zinc sulfide thin film layer 3---Optical recording film
Claims (1)
媒体において、上記光記録膜の片面または両面に硫化亜
鉛薄膜層を形成したことを特徴とする光記録媒体。An optical recording medium comprising an optical recording film provided on a transparent polymer substrate, characterized in that a zinc sulfide thin film layer is formed on one or both sides of the optical recording film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61135209A JPS62290585A (en) | 1986-06-10 | 1986-06-10 | Photo-recording medium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61135209A JPS62290585A (en) | 1986-06-10 | 1986-06-10 | Photo-recording medium |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62290585A true JPS62290585A (en) | 1987-12-17 |
Family
ID=15146400
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61135209A Pending JPS62290585A (en) | 1986-06-10 | 1986-06-10 | Photo-recording medium |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62290585A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0266747A (en) * | 1988-09-01 | 1990-03-06 | Matsushita Electric Ind Co Ltd | Flat plate information recording carrier |
-
1986
- 1986-06-10 JP JP61135209A patent/JPS62290585A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0266747A (en) * | 1988-09-01 | 1990-03-06 | Matsushita Electric Ind Co Ltd | Flat plate information recording carrier |
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