JPS62288176A - Method of bonding ceramic to al alloy member - Google Patents
Method of bonding ceramic to al alloy memberInfo
- Publication number
- JPS62288176A JPS62288176A JP12794286A JP12794286A JPS62288176A JP S62288176 A JPS62288176 A JP S62288176A JP 12794286 A JP12794286 A JP 12794286A JP 12794286 A JP12794286 A JP 12794286A JP S62288176 A JPS62288176 A JP S62288176A
- Authority
- JP
- Japan
- Prior art keywords
- alloy
- plate
- joining
- pure
- bonding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910000838 Al alloy Inorganic materials 0.000 title claims description 61
- 239000000919 ceramic Substances 0.000 title claims description 21
- 238000000034 method Methods 0.000 title claims description 21
- 238000005304 joining Methods 0.000 claims description 35
- 229910045601 alloy Inorganic materials 0.000 claims description 20
- 239000000956 alloy Substances 0.000 claims description 20
- 229910000861 Mg alloy Inorganic materials 0.000 claims description 15
- 238000002844 melting Methods 0.000 claims description 15
- 230000008018 melting Effects 0.000 claims description 15
- 229910001297 Zn alloy Inorganic materials 0.000 claims description 13
- 238000007747 plating Methods 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 3
- 239000011261 inert gas Substances 0.000 claims description 3
- 229910021364 Al-Si alloy Inorganic materials 0.000 claims 1
- 229910002110 ceramic alloy Inorganic materials 0.000 claims 1
- 238000005266 casting Methods 0.000 description 19
- 239000000463 material Substances 0.000 description 11
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000007791 liquid phase Substances 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 229910001092 metal group alloy Inorganic materials 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 241000272814 Anser sp. Species 0.000 description 1
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- 244000025254 Cannabis sativa Species 0.000 description 1
- 229910003023 Mg-Al Inorganic materials 0.000 description 1
- 229910003564 SiAlON Inorganic materials 0.000 description 1
- 229910007570 Zn-Al Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000003353 gold alloy Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000013001 point bending Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
Landscapes
- Pressure Welding/Diffusion-Bonding (AREA)
- Ceramic Products (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
３、発明の詳細な説明
〔産業上の利用分野〕
本発明はセラミックスとＡｌ合金部材との接合方法に関
する。Detailed Description of the Invention 3. Detailed Description of the Invention [Field of Industrial Application] The present invention relates to a method of joining ceramics and an Al alloy member.
従来、特開昭５８−１３５１８０号に記載の方法がある
が、ＡＬまたはＡｌ合金をインサート材としたセラミッ
クスと金属とを接合する方法においては、金属として融
点の高い鉄系金属の場合は接合可能であるが融点の低い
Ａｌ合金の場合、接合温度の方が人を合金の融点より高
いため接合不可能である。Conventionally, there is a method described in JP-A-58-135180, but in the method of joining ceramics and metal using AL or Al alloy as an insert material, it is possible to join iron-based metals with high melting points as metals. However, in the case of an Al alloy with a low melting point, bonding is impossible because the bonding temperature is higher than the melting point of the alloy.
セラミックスと金属部材とを接合する方法として、ＡＡ
またはＡｌ合金をインサート材として拡散接合する方法
があるが、金属部材がＡｌ合金部材である場合は、接合
困難となる。すなわち、接合温度をＡｌ合金部材の融点
よシ低くしなければならないためＡｌまたは人を合金イ
ンサート材とセラミックスとの反応が促進されず接合が
困難となる。さらに６人を合金部材の変形の点から。AA is a method for joining ceramics and metal members.
Alternatively, there is a method of diffusion bonding using an Al alloy as an insert material, but if the metal member is an Al alloy member, bonding becomes difficult. That is, since the joining temperature must be lower than the melting point of the Al alloy member, the reaction between the Al or aluminum alloy insert material and the ceramics is not promoted, making joining difficult. In addition, 6 people were considered from the point of view of deformation of alloy members.
接合圧力も高くできない。一方、接合圧力が低いとＡｌ
インサート材及び人を合金部材表面の酸化皮膜の破壊が
困難となシ、ｔた。接合面の密着性も悪く々って接合性
は低下する。Bonding pressure cannot be increased either. On the other hand, when the bonding pressure is low, Al
It was difficult to destroy the oxide film on the surface of the alloy member when inserting the insert material or touching it. The adhesion of the bonding surfaces is also poor, resulting in a decrease in bonding performance.
以上の問題点をまとめると下記のようになる。The above problems can be summarized as follows.
（１）接合温度をＡｌ合金部材の融点より低くしなけれ
ばならない。(1) The joining temperature must be lower than the melting point of the Al alloy member.
（ｉｔ） 接合圧力をＡｌ合金部材が変形しない程度
に低くしなければならない。(it) The bonding pressure must be low enough not to deform the Al alloy member.
Ｇ１１）インサート材及びｈｔｔ金部材表面の酸化皮膜
を除去もしくは破壊しなければならない。G11) The oxide film on the surface of the insert material and htt gold member must be removed or destroyed.
本発明の目的はセラミックスとＡｌ合金部材とを良好Ｋ
ｉｉ！合することが可能な接合方法を提供することにあ
る。The purpose of the present invention is to improve the quality of ceramics and Al alloy members.
ii! The object of the present invention is to provide a joining method that can be used in combination.
前記問題点を解決するため１本発明では次のような手段
を採用した。In order to solve the above problems, the present invention adopts the following means.
（＋）接合温度の点
接合プロセスを２工程とした。すなわち、セラミックス
に６らかじめ高温で純Ａｌ板もしくは。The point bonding process at the (+) bonding temperature was made into two steps. In other words, a pure Al plate or a ceramic plate is heated at a high temperature in advance.
Ａｌ合金板を接合する。その後、融点の低いＺｎ合金も
しくはＭｇ合金を用いてＡｌ合金部材の融点よシ低い温
度でセラミックスとＡｌ合金部材を接合する。Join the Al alloy plates. Thereafter, the ceramic and the Al alloy member are joined at a temperature lower than the melting point of the Al alloy member using a Zn alloy or Mg alloy with a low melting point.
（１１） 接合圧力の点
まずセラミックスＫＩｌＩＡｌ板もしくは人を合金板を
接合するので、接合圧力は高くできる。ま九。(11) Bonding pressure Since ceramic KIlIAl plates or solid alloy plates are first bonded, the bonding pressure can be high. Nine.
Ａｌ−８ｉ合金と純ＡＬもしくはＡｌ合金の積層板もし
くはクラツド板を用いた場合は、接合圧力はほとんど必
要としない。すなわち、接合温度をｈｔ−ｓｔ合全全部
材融点以上としＡｌ−８ｉ合金部材のみ液相とすると、
接合圧力はほとんど必要としない。When a laminated plate or clad plate of Al-8i alloy and pure AL or Al alloy is used, almost no bonding pressure is required. In other words, if the joining temperature is set to be higher than the melting point of all the members in the ht-st combination and only the Al-8i alloy member is in the liquid phase,
Almost no bonding pressure is required.
そして、その後のと純Ａｌ板もしくはＡｌ合金板を接合
し九セラミックスとＡｌ合金部材との接合でもＺｎ合金
もしくはＭｇ合金を溶融させるので。Then, the Zn alloy or Mg alloy is melted in the subsequent joining of the pure Al plate or the Al alloy plate and the joining of the ceramic and the Al alloy member.
接合圧力はほとんど必要としない。したがって。Almost no bonding pressure is required. therefore.
ＡＡ合金部材に大きな接合圧力をかけなくとも。No need to apply large bonding pressure to AA alloy parts.
接合面は密着化し、人り合金部材の変形はほとんどなく
接合可能となる。The joint surfaces are in close contact, and the metal alloy members can be joined with almost no deformation.
Ｇ１１）酸化皮膜の点
前記のように、液相を介した接合なので、真空中、もし
くは不活性ガス中で行なえば、酸化防止ができ、かつ、
液相が生じることによりＡｌ表面の酸化皮ＰＭは破壊さ
れ、接合性は向上する。G11) Regarding oxide film As mentioned above, since bonding is performed via a liquid phase, oxidation can be prevented by performing it in a vacuum or in an inert gas, and
The generation of a liquid phase destroys the oxide skin PM on the Al surface, improving bonding properties.
すなわち、溶融したインサート材と母材との反応で清浄
化と密着化が同時にはかられ、接合容易となる。That is, the reaction between the molten insert material and the base material simultaneously achieves cleaning and adhesion, making joining easier.
また、Ｚｎ合金もしくはＭｇ合金をセラミック側及びＡ
ｌ合余部材側に予めメッキしておけば。In addition, Zn alloy or Mg alloy is used on the ceramic side and A
l If the remaining parts are plated in advance.
よシ接合性は向上する。さらに、セラミックスと人り合
金部材とをＺｎ合金もしくはＭｇ合金と接合する際、接
合部に超音波振動を与えれば、大気中でも接合可能とな
る。The zygosity is improved. Furthermore, when joining ceramics and a metal alloy member to a Zn alloy or Mg alloy, if ultrasonic vibration is applied to the joint, joining can be performed even in the atmosphere.
１、接合プロセスを２工程とする。 1. The bonding process is a two-step process.
融点の差のある材料を接合することができる。Materials with different melting points can be joined.
２、Ｚｎ合金もしくはＭｇ合金を使用する。2. Use Zn alloy or Mg alloy.
ｈｔ合全余部材融点よシも低い温度でＺｎ−Ａｌ合金も
しくはＭｇ合金は溶融するためＡｌ合金部材の融点よシ
低い温度でかつＡｌ合金部材が変形しないほど小さな接
合圧力で接合可能となる。Since the Zn-Al alloy or Mg alloy melts at a temperature lower than the melting point of the remaining parts, it is possible to join them at a temperature lower than the melting point of the Al alloy member and with a welding pressure so small that the Al alloy member does not deform.
さらに、Ｚｎ合金もしくはＭｇ合金を溶かすことはＡｌ
表面に形成された安定な酸化皮膜の破壊。Furthermore, melting Zn alloy or Mg alloy is
Destruction of the stable oxide film formed on the surface.
反応の促進及び接合面の密着化の向上に有効である。す
なわち、接合性が向上する。It is effective in promoting reaction and improving adhesion between bonding surfaces. That is, bondability is improved.
３、Ｍｇ合金もしくはＺｎ合金メッキをする。3. Plate with Mg alloy or Zn alloy.
上記合金を超音波メツΦ、スパッタリングによるメッキ
などすれば、各Ａｌ表面の酸化皮膜の問題はなくなり接
合性は向上する。If the above-mentioned alloy is plated by ultrasonic plating or sputtering, the problem of the oxide film on each Al surface will be eliminated and the bonding performance will be improved.
４、超音波振動を与える。4. Apply ultrasonic vibration.
超音波振動によシｚｎ合金もしくはＭｇ合金の酸化皮膜
は破壊され、接合性は向上し、大気中でも接合可能とな
る。The oxide film of the Zn alloy or Mg alloy is destroyed by ultrasonic vibration, the bonding performance is improved, and bonding is possible even in the atmosphere.
１、サイアロンとＡｌ合金鋳物との接合例サイアロンと
Ａｌ合金鋳物との接合例について説明する。1. Example of joining between Sialon and Al alloy casting An example of joining between Sialon and Al alloy casting will be described.
第１図に示すように、予めと純Ａｌ板１（直径１０ａｍ
、厚さ０．５ ｍ ）をサイアロン丸棒２（直径１０履
、長さ２５■）に接合するにあたり（接合条件は、接合
温度６００Ｃ，接合圧力０．５ ｋｇｆ ／ｓａｗ”、
接合時間１５ｉ、接合雰囲％Ａｒガス）。As shown in Fig. 1, a pure Al plate 1 (diameter 10 am
, thickness 0.5 m) to Sialon round bar 2 (diameter 10, length 25 cm) (joining conditions were: welding temperature 600C, welding pressure 0.5 kgf/saw",
Bonding time 15i, bonding atmosphere %Ar gas).
と純Ａｌ板１とサイアロン丸棒２との間に石板がと純Ａ
ｌでそＯ両面ＫＡｌ−１０ｓ８ ｉ −２％Ｍｇ合金を
クラッドしたＡｊインサート材３（直径１０麿、厚さ０
．１６１）を挿入した。接合中は１両面のｋＬ−１０％
８ ｉ −２％Ｍｇ合金が溶融し。There is a stone plate between the pure Al plate 1 and the Sialon round bar 2.
Aj insert material 3 (diameter 10 mm, thickness 0
．． 161) was inserted. During bonding, kL-10% of one side
8 i -2%Mg alloy is melted.
Ａｌインサート材３表面及びと純Ａｌ板１表面の酸化皮
膜は破壊され、また、溶融Ａｌ−１０％ｆ３ｉ−２％Ｍ
ｇ合金とサイアロン丸棒２とが反応し。The oxide film on the surface of the Al insert material 3 and the surface of the pure Al plate 1 is destroyed, and the molten Al-10%f3i-2%M
The g-alloy and Sialon round bar 2 react.
サイアロン丸棒２とと純Ａｌ板１とは強固に接合する。The Sialon round bar 2 and the pure Al plate 1 are firmly joined.
しかる後、第２図に示すようにと純Ａｌ板１が接合され
たサイアロン丸棒２と人を合金鋳物４との間ＫＭｇ−６
０チＡｌ合金５（直径１０ｍ＋、厚さ０．０２ａＩＩＫ
）を挿入し、Ａｒガス雰囲気中で４８０Ｃに加熱し、
０．０１ ｋｇｆ／ａｓｈ”の圧力を負荷し、サイアロ
ン丸棒２とＡｌ合金鋳物４とを接合し友。After that, as shown in FIG.
0chi Al alloy 5 (diameter 10m+, thickness 0.02a IIK
) and heated to 480C in an Ar gas atmosphere.
A pressure of 0.01 kgf/ash was applied to join the Sialon round rod 2 and the Al alloy casting 4.
Ｍｇ−６０％ｋ１合金５の融点は約４５０ Ｇテロるの
で４８０Ｃの加熱によシＭｇ−６０％Ａｌ合金５のみ溶
融してサイアロン丸棒２に接合されたと純Ａｌ板１及び
Ａｌ合金鋳物４と反応して接合する。また、接合温度が
Ａｌ合金鋳物４の溶融開始温度（約５３０Ｃ）よシ低く
、また接合圧力も極めて小さいので、Ａ／１．合金鋳物
４の変形もなく接合できる。Since the melting point of the Mg-60%K1 alloy 5 is about 450 G, only the Mg-60%Al alloy 5 was melted by heating at 480C and was joined to the Sialon round bar 2, the pure Al plate 1 and the Al alloy casting 4. Reacts with and joins. Furthermore, since the joining temperature is lower than the melting start temperature (approximately 530C) of the Al alloy casting 4 and the joining pressure is extremely low, A/1. The alloy castings 4 can be joined without deformation.
接合後、３点曲げ試験を行ったところＡｌ合金鋳物４が
塑性変形し、接合部強度はＡｌ合金鋳物４の強度□以上
であった。本接合では、Ｍｇ−６チＡｌ合金板のかわシ
にＭｇ箔（厚さ０．０２ ｍ ）を用いても同様の結果
が得られた。これはＡｌとＭｇの共晶反応でＭｇ−Ａｌ
合金箔を用いた場合と同様４５０Ｃ以上で接合部界面に
溶融Ｍｇ −Ａ１合金層が形成されるためである。After joining, a three-point bending test was conducted, and the Al alloy casting 4 was plastically deformed, and the strength of the joint was greater than the strength of the Al alloy casting 4 □. In this bonding, similar results were obtained even when Mg foil (thickness: 0.02 m) was used as the edge of the Mg-6-Al alloy plate. This is a eutectic reaction between Al and Mg, resulting in Mg-Al
This is because a molten Mg-A1 alloy layer is formed at the joint interface at a temperature of 450 C or higher, similar to when alloy foil is used.
２、窒化珪素チップと複雑形状のＡｌ合金鋳物との接合
例
第３図及び第４図に示すような工程で窒化珪素チップと
複雑な形状をした人を合金鋳物ＣＡＤＣ１２）との接合
例について説明する。2. Example of joining a silicon nitride chip and a complex-shaped Al alloy casting An example of joining a silicon nitride chip and a complicated-shaped person to an alloy casting CADC12) in the process shown in Figures 3 and 4 will be explained. do.
実施例１と同様の接合条件で窒化珪素チップ６にと純Ａ
ｌ板７を接合する。その後、ｚｎ−ｓｓＡｌ合金板８（
厚さ０．１ ｍ ）をと純Ａｌ板７とＡｌ合金鋳物９と
の間に挿入し、大気中でガスバーナ１０を用いて接合部
近傍を局部加熱し、ｚｎ−ｓｓｈｔ合金板８のみを溶融
させる。Ｚｎ−５％Ａｌ合金板８が溶融した時１人を表
面部の酸化皮膜を破壊するため接合面同士を互いに軽く
摩擦する。このような工程によシ、窒化珪素チップｌと
Ａｌ合金鋳物９とは強固に接合できる。また、接合圧力
はほとんどかからないのでＡｌ合金鋳物９の変形もない
。Pure A was bonded to silicon nitride chip 6 under the same bonding conditions as in Example 1.
The l plate 7 is joined. After that, the zn-ssAl alloy plate 8 (
0.1 m thick) is inserted between the pure Al plate 7 and the Al alloy casting 9, and the vicinity of the joint is locally heated using a gas burner 10 in the atmosphere to melt only the ZN-SSHT alloy plate 8. let When the Zn-5% Al alloy plate 8 is melted, one person lightly rubs the bonded surfaces against each other in order to destroy the oxide film on the surface. Through such a process, the silicon nitride chip 1 and the Al alloy casting 9 can be firmly joined. Furthermore, since almost no bonding pressure is applied, there is no deformation of the Al alloy casting 9.
Ｚ ｎ −５％Ａｌ合金板８が溶融した時、接合面同士
を摩擦するかわりに＊Ｈ１音波加振機によシ超音波振動
を接合部に与えると、よシ一層間単に接合できる。When the Z n -5% Al alloy plate 8 is melted, instead of rubbing the joining surfaces together, applying ultrasonic vibration to the joining part using the *H1 sonic vibrator allows for even easier joining.
３、アルミナとＡｌ合金鋳物との接合側実施例１のサイ
アロンの代シにアルミナの丸棒を用いる接合例について
説明する。3. Joining side of alumina and Al alloy casting A joining example in which an alumina round bar is used instead of the sialon of Example 1 will be described.
実施例１と同一の接合条件で、アルミナにと純Ａｌ板を
接合する。その後、そのと純Ａｌ板にＺｎ−５％Ａｌ合
金を超音波メッキする。またＡｌ合金鋳物の丸棒の片面
にもＺｎ−５％Ａｌ合金を超音波メッキする。そして、
これらの超音波メツキした面同士を突き合わせ、Ａｒガ
ス雰囲気中で。A pure Al plate was bonded to alumina under the same bonding conditions as in Example 1. Thereafter, Zn-5% Al alloy is ultrasonically plated on the pure Al plate. Further, one side of the aluminum alloy cast round bar is also ultrasonically plated with Zn-5% Al alloy. and,
These ultrasonically plated surfaces were butted together in an Ar gas atmosphere.
４００Ｃに加熱し、１０分間保持する。この際。Heat to 400C and hold for 10 minutes. On this occasion.
接合材には接合面の密着化のため１ｋｇの荷重を加えた
。このようにして接合したアルミナ／Ａｌ合金鋳物接合
体の曲げ試験を実施したところ、実施例１と同様Ａｌ合
金鋳物が変形し接合部では破壊しなかった。A load of 1 kg was applied to the bonding material to ensure adhesion of the bonded surfaces. When the alumina/Al alloy casting assembly thus joined was subjected to a bending test, as in Example 1, the Al alloy casting was deformed but did not break at the joint.
以上のように、接合面にＺｎ −Ａｌ合金を超音波メッ
キすると、接合面同士を摩擦したシ、超音波振動を与え
る必要がなくなシ、ｉ−産品に対しては非常に有効であ
る。As described above, ultrasonic plating of Zn--Al alloy on the joint surfaces eliminates the need to rub the joint surfaces together and apply ultrasonic vibration, and is very effective for i-products.
一方、ｚｎ−Ａｚ金合金メッキした面を合わせ。On the other hand, align the zn-Az gold alloy plated surfaces.
大気中で４００Ｃに加熱し、さらに、接合面に超音波振
動を与えて接合した試験片を作成した。この試験片にお
いても、前記実施例と同様、良好な結果が得られた。こ
のように、超音波撮動を与えることによシ大気中での接
合も可能となった。A test piece was prepared by heating to 400C in the atmosphere and further applying ultrasonic vibration to the bonding surface. In this test piece as well, good results were obtained as in the above example. In this way, by providing ultrasonic imaging, it has become possible to bond in the atmosphere.
以上説明したように１本発明によれば、３８５〜４８０
Ｃの温度で接合でき、またＡｌ表面の酸化皮膜は破壊さ
れ接合性は向上する。As explained above, according to the present invention, 385 to 480
Bonding can be performed at a temperature of C, and the oxide film on the Al surface is destroyed, improving bonding performance.
第１図、第２図、第３図、第４図は本発明の接合方法に
関する説明図で、第１図及び第２図はサイアロンとＡｌ
合金鋳物との接合例の説明図、第３図及び第４図は窒化
珪素チップと複雑形状のＡｌ合金鋳物の接合例の説明図
でちる。
１．７・・・と純Ａｌ板、２・・・サイアロン丸棒、３
・・・Ａｌインサート板、４，９・・・Ａｌ合金鋳物、
５・・・Ｍｇ−６％合金板、６・・・窒化珪素チップ、
８・・・茅１ｍ 第２図
１−此Ａ！雁
２−二−サイアＤし琲
３ ・−−Ａノイー′す°−トオＬ（
４−Ａｌ冶８か全ル物
５°−ＪＶｆ）−７昭Ａト４ト氷（
第３８ 第４目
Ａ ＋＋＋ ｌ会−ａ集ケッ７゛
７−純Ａｌｌ板
δ−ｚ区−５ｚポ締板
？−、４ｆ番Ｅ昔物
１０・−ｔＸ’−す1, 2, 3, and 4 are explanatory diagrams relating to the joining method of the present invention, and FIGS. 1 and 2 show SiAlON and Al
FIGS. 3 and 4 are explanatory diagrams of an example of joining with an alloy casting, and FIGS. 3 and 4 are explanatory diagrams of an example of joining a silicon nitride chip and a complex-shaped Al alloy casting. 1.7... and pure Al plate, 2... Sialon round bar, 3
...Al insert plate, 4,9...Al alloy casting,
5... Mg-6% alloy plate, 6... Silicon nitride chip,
8...1m of grass Figure 2 1-This A! Wild Goose 2-2-Saia D Shiki 3 ・--A Noie'su°-Too L (4-Alji 8 or Zenru Mono 5°-JVf)-7 Showa To 4 To Ice (No. 38 No. 4 A +++ l meeting-a collection ket 7゛7-pure All board δ-z ward-5z po closing board?-, 4f No.E old thing 10・-tX'-su
Claims (1)
いて、予めセラミックスと純Ａｌ板もしくはＡｌ合金板
を真空中もしくは不活性ガス中で加熱して接合し、しか
る後、その純Ａｌ板もしくはＡｌ合金板と前記Ａｌ合金
部材との間にＺｎ合金もしくはＭｇ合金を介在させ、前
記Ｚｎ合金もしくはＭｇ合金を溶融させて接合すること
を特徴とするセラミックスとＡｌ合金部材との接合方法
。 ２、特許請求の範囲第１項の方法において、純Ａｌ板も
しくはＡｌ合金板として、Ａｌ−Ｓｉ合金と純Ａｌもし
くはＡｌ合金とが積層もしくはクラッドされていること
を特徴とするセラミックスとＡｌ合金部材との接合方法
。 ３、特許請求の範囲第１項の方法において、Ｚｎ合金も
しくはＭｇ合金を既にセラミックスに接合された純Ａｌ
板もしくはＡｌ合金板及びＡｌ合金部材にメッキし、そ
の後、その両者のＺｎ合金メッキ層もしくはＭｇ合金メ
ッキ層を溶融して接合することを特徴とするセラミック
スとＡｌ合金との接合方法。 ４、特許請求の範囲第１項の方法において、純Ａｌ板も
しくはＡｌ合金板が既に接合されたセラミックスとＡｌ
合金部材との間にＺｎ合金もしくはＭｇ合金を介在させ
、これらを大気中もしくは不活性ガス中にて加熱し、か
つ超音波振動を与えて接合することを特徴とするセラミ
ックスとＡｌ合金部材との接合方法。 ５、特許請求の範囲第１項から第４項のいずれかの方法
において、純Ｍｇもしくは純Ｚｎを介在させて接合する
ことを特徴とするセラミックスとＡｌ合金との接合方法
。[Claims] 1. In a method for joining ceramics and Al alloy members, the ceramics and pure Al plate or Al alloy plate are heated and joined in advance in a vacuum or in an inert gas, and then the pure A method for joining ceramics and an Al alloy member, characterized in that a Zn alloy or Mg alloy is interposed between the Al plate or Al alloy plate and the Al alloy member, and the Zn alloy or Mg alloy is melted and joined. . 2. In the method of claim 1, a ceramic and Al alloy member characterized in that an Al-Si alloy and pure Al or an Al alloy are laminated or clad as a pure Al plate or an Al alloy plate. How to join with. 3. In the method of claim 1, Zn alloy or Mg alloy is bonded to pure Al that has already been bonded to ceramics.
A method for joining ceramics and an Al alloy, which comprises plating a plate or an Al alloy plate and an Al alloy member, and then melting and joining the Zn alloy plating layer or the Mg alloy plating layer on both of them. 4. In the method according to claim 1, a pure Al plate or an Al alloy plate is bonded to a ceramic and an Al
Ceramics and Al alloy members are bonded by interposing a Zn alloy or Mg alloy between the alloy member, heating them in the atmosphere or inert gas, and applying ultrasonic vibrations. Joining method. 5. A method for joining ceramics and an Al alloy according to any one of claims 1 to 4, characterized in that the joining is performed with pure Mg or pure Zn interposed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12794286A JPS62288176A (en) | 1986-06-04 | 1986-06-04 | Method of bonding ceramic to al alloy member |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12794286A JPS62288176A (en) | 1986-06-04 | 1986-06-04 | Method of bonding ceramic to al alloy member |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62288176A true JPS62288176A (en) | 1987-12-15 |
| JPH0369865B2 JPH0369865B2 (en) | 1991-11-05 |
Family
ID=14972445
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12794286A Granted JPS62288176A (en) | 1986-06-04 | 1986-06-04 | Method of bonding ceramic to al alloy member |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62288176A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020044593A1 (en) * | 2018-08-28 | 2020-03-05 | 三菱マテリアル株式会社 | Copper/ceramic bonded body, insulation circuit board, method for producing copper/ceramic bonded body, and method for manufacturing insulation circuit board |
-
1986
- 1986-06-04 JP JP12794286A patent/JPS62288176A/en active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020044593A1 (en) * | 2018-08-28 | 2020-03-05 | 三菱マテリアル株式会社 | Copper/ceramic bonded body, insulation circuit board, method for producing copper/ceramic bonded body, and method for manufacturing insulation circuit board |
| JPWO2020045388A1 (en) * | 2018-08-28 | 2021-08-26 | 三菱マテリアル株式会社 | A method for manufacturing a copper / ceramics joint, an insulating circuit board, and a copper / ceramics joint, and a method for manufacturing an insulated circuit board. |
| US11396059B2 (en) | 2018-08-28 | 2022-07-26 | Mitsubishi Materials Corporation | Copper/ceramic bonded body, insulating circuit substrate, copper/ceramic bonded body production method, and insulating circuit substrate production method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0369865B2 (en) | 1991-11-05 |
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