JPS62284518A - Integrated circuit - Google Patents

Integrated circuit

Info

Publication number
JPS62284518A
JPS62284518A JP61127794A JP12779486A JPS62284518A JP S62284518 A JPS62284518 A JP S62284518A JP 61127794 A JP61127794 A JP 61127794A JP 12779486 A JP12779486 A JP 12779486A JP S62284518 A JPS62284518 A JP S62284518A
Authority
JP
Japan
Prior art keywords
circuit
logic elements
time
delay
delay circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP61127794A
Other languages
Japanese (ja)
Inventor
Toshiyuki Muta
俊之 牟田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP61127794A priority Critical patent/JPS62284518A/en
Publication of JPS62284518A publication Critical patent/JPS62284518A/en
Pending legal-status Critical Current

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  • Static Random-Access Memory (AREA)
  • Pulse Circuits (AREA)

Abstract

PURPOSE:To obtain a desired delay time by providing a delay circuit constituted by connecting plural logic elements in series and a control circuit which selects outputs of the respective logic elements. CONSTITUTION:This integrated circuit incorporates the delay circuit 1 constituted by connecting plural logic elements 11-1n in series, a counter 2 which counts input pulses supplied to the delay circuit 1, and the selecting circuit 3 which selects the output pulses of the logic elements 11-1n. A figure shows that the time Td from the trailing edge to the leading edge of the output (o) of a monostable multivibrator when the monostable multivibrator is connected between the selecting circuit 3 and delay circuit 1 is equal to the sum of delay times of the logic elements 11-1m. This time Td is found from the counted value of the counter 2 within a specific time, so the logic elements 11-1m are so selected that the time has a desired value. Consequently, the desired delay time Td is obtained.

Description

【発明の詳細な説明】 3、発明の詳細な説明 〔概要〕 高密度集積回路(LSI )等の集積回路内に、複数個
の論理素子を直列接続して構成した遅延回路と、各論理
素子の出力を選択する制御回路とを設けることによって
、所望の遅延時間が得られるようにしたものである。
[Detailed Description of the Invention] 3. Detailed Description of the Invention [Summary] A delay circuit configured by connecting a plurality of logic elements in series in an integrated circuit such as a high-density integrated circuit (LSI), and each logic element. A desired delay time can be obtained by providing a control circuit that selects the output of the delay time.

〔産業上の利用分野〕[Industrial application field]

本発明は集積回路の改良に関するものである。 The present invention relates to improvements in integrated circuits.

たとえばメモリの読取り書込み制御には、ローアドレス
ストローブ信号(RAS )コラムアドレスストローブ
信号(CAS )書込み許可信号(WE)および出力許
可信号(OE)の4種類の制御信号を用いるが、これら
の制御信号を作るためのメモリ制・御回路は9通常、1
個の高密度集積回路の中に組み込まれる。
For example, four types of control signals are used to control reading and writing of memory: a row address strobe signal (RAS), a column address strobe signal (CAS), a write enable signal (WE), and an output enable signal (OE). The memory control/control circuit for creating is usually 9,1
integrated into individual high-density integrated circuits.

ところで、これらの制御信号に対しては、各制御信号自
身および各制御信号相互間のオンオフのタイミング□に
関し、制御対象であるメモリの特性を考慮して決められ
た最小値が許容限界値として決められている。
By the way, for these control signals, the minimum value determined in consideration of the characteristics of the memory to be controlled is determined as the allowable limit value for each control signal itself and the on/off timing □ between each control signal. It is being

またメモリの制御においては、アクセス時間を短くする
ことが特に重要である。したがって、メモリ制御回路の
設計に際しては、これらのタイミングを、できる限り許
容限界まで近づけることによって、一連の制御が最短時
間で行われるようにしている。
Furthermore, in memory control, it is particularly important to shorten access time. Therefore, when designing a memory control circuit, these timings are brought as close as possible to the allowable limits so that a series of controls can be performed in the shortest possible time.

一方、これらのタイミングの制御にはクロックを使用す
るが、クロックの周期が、たとえば50n3であるとす
ると、 50nsのパルス幅の信号はクロックから直接
作ることができる。
On the other hand, a clock is used to control these timings, and if the period of the clock is, for example, 50n3, a signal with a pulse width of 50 ns can be generated directly from the clock.

しかし、これから、たとえば60n3のパルス幅の信号
を作るには、50nsのパルス幅の信号と、これを10
n3遅延させた信号とを作り、二つの信号の論理和をと
るという方法を用いる。
However, to create a signal with a pulse width of 60n3, for example, you need to create a signal with a pulse width of 50ns and a signal with a pulse width of 10n3.
A method is used in which a signal delayed by n3 is generated and the logical sum of the two signals is calculated.

このような用途に供するため、高密度集積回路には、所
望の遅延を作るための遅延回路を使用することが多い。
To serve such applications, high-density integrated circuits often use delay circuits to create a desired delay.

この際、前記のように、制御信号のタイミングをできる
限り許容限界に近づけるうえで、正確な遅延時間が得ら
れることが非常に重要である。
At this time, as described above, it is very important to obtain an accurate delay time in order to bring the timing of the control signal as close to the allowable limit as possible.

〔従来の技術〕[Conventional technology]

高密度集積回路の内部で精密な時間単位の遅延時間を必
要とする場合には、従来、たとえば遅延時間がl ns
前後の論理素子を直列に複数個接続したものを、高密度
集積回路の内部に設ける(第一の従来例)、あるいは外
部に設ける(第二の従来例)という方法が採られていた
When a precise time unit delay time is required inside a high-density integrated circuit, conventionally, for example, the delay time is l ns
A method has been adopted in which a plurality of front and rear logic elements connected in series are provided inside a high-density integrated circuit (first conventional example) or externally (second conventional example).

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

上記第一の従来例では、製品のばらつきあるいは温度変
化等を考慮して1遅延時間に対してかなりの許容限界を
与える必要があり、高速のメモリ制御回路等には適用で
きなかった。
In the first conventional example, it is necessary to give a considerable tolerance limit to one delay time in consideration of product variations, temperature changes, etc., and it cannot be applied to high-speed memory control circuits and the like.

また第二の従来例においては2通用装置の小型化・コス
トダウンの妨げになっていた。
Further, in the second conventional example, it has been an obstacle to miniaturization and cost reduction of the dual-purpose device.

すなわち9本発明の目的は、高速のメモリ制御回路に通
した遅延回路内蔵の集積回路を提供するにある。
That is, an object of the present invention is to provide an integrated circuit with a built-in delay circuit that passes through a high-speed memory control circuit.

(問題点を解決するための手段) 本発明による集積回路は、第1図の原理図に示すように
、複数個の論理素子11〜1nを直列接続して構成した
遅延回路1と、遅延回路1に与えられる大力パルスを計
数するカウンタ2と、複数個の論理素子11〜1nの各
々の出力パルスを選択する選択回路3とを内蔵したもの
である。
(Means for Solving Problems) As shown in the principle diagram of FIG. 1, the integrated circuit according to the present invention includes a delay circuit 1 configured by connecting a plurality of logic elements 11 to 1n in series, 1, and a selection circuit 3 for selecting output pulses from each of a plurality of logic elements 11 to 1n.

〔作用〕[Effect]

第2図は9選択回路3と遅延回路1との間に単安定マル
チバイブレークを接続したときの、単安定マルチバイブ
レータの出力(0)および各論理素子11〜1mの出力
(1)〜(m>の関係を示すタイムチャートであり、単
安定マルチバイブレークの出力(0)の立下がりから立
上がりまでの時間Tdがm個の論理素子11〜b++の
各々における遅延時間の和に等しいことを表している。
Figure 2 shows the output (0) of the monostable multivibrator and the outputs (1) to (m This is a time chart showing the relationship between There is.

 “ ゛この時間Tdは、カウンタ2による所定時間内のカウ
ント値から求めることができるので、これが所望の値に
なるように論理素子11〜1mの出力を選択することに
より、所望の遅延時間Tdを得ることができる。
“This time Td can be obtained from the count value of the counter 2 within a predetermined time, so by selecting the outputs of the logic elements 11 to 1m so that this becomes the desired value, the desired delay time Td can be obtained. Obtainable.

〔実施例〕〔Example〕

第3図は本発明の実施例の構成図であり遅延回路1の先
頭の論理素子11はOR棄子、また以降の論理素子12
〜1n+はAND素子としている。
FIG. 3 is a block diagram of an embodiment of the present invention, in which the first logic element 11 of the delay circuit 1 is an OR discard, and the subsequent logic elements 12
~1n+ is an AND element.

OR回路5を介し起動パルスを入力することによっテ単
安定マルチバイブレータ4を起動すると。
When the monostable multivibrator 4 is started by inputting a starting pulse through the OR circuit 5.

生成された所定パルス幅の信号は遅延回路1に人力され
、遅延回路1で遅延を受けたのち単安定マルチバイブレ
ータ4に入力され、一定間隔の連続パルスtO)が作ら
れる。
The generated signal with a predetermined pulse width is input to the delay circuit 1, and after being delayed in the delay circuit 1, is input to the monostable multivibrator 4, and continuous pulses tO) at regular intervals are generated.

これを、カウンタ2によってカウントし、外部に設けた
図示省略のファームウェアによってカウント値から遅延
時間を計算し、同じく外部に設けた図示省略の制御回路
によって選択回路3を制御し、所望の遅延時間が得られ
るように論理素子11〜1mの出力を選択する。
This is counted by a counter 2, a delay time is calculated from the count value by firmware (not shown) provided externally, and a selection circuit 3 is controlled by a control circuit (not shown) also provided externally, so that the desired delay time is determined. The outputs of the logic elements 11 to 1m are selected so as to obtain the desired result.

これを、装置電源投入時あるいは稼働中等に適時おこな
い、所童の遅延時間が得られたあと、単安定マルチバイ
ブレーク4を停止させ5遅延回路1と選択回路3とによ
って作られる遅延を内部回路6で利用する。 ・ 各論理素子11〜1mにおける遅延時間は約103であ
るから、約1 nsの精度で所望の遅延時間を作ること
ができる。
This is done at appropriate times such as when the device is powered on or during operation, and after the desired delay time is obtained, the monostable multi-bi break 4 is stopped and the delay created by the delay circuit 1 and the selection circuit 3 is transferred to the internal circuit 6. Use with. - Since the delay time in each logic element 11 to 1m is about 103, the desired delay time can be created with an accuracy of about 1 ns.

したがって高密度集積回路の製品のばらつきや温度変化
等による制御信号のタイミングの変動を高い精度で補償
することができる。
Therefore, it is possible to compensate for variations in timing of control signals due to product variations in high-density integrated circuits, temperature changes, etc. with high accuracy.

〔発明の効果〕〔Effect of the invention〕

以上説明したように1本発明による高密度集積回路では
、所望の遅延時間を高精度で作ることができる。このた
め、たとえばメモリ制御回路においては、制御信号のタ
イミングを許容限界に近づけることができ、アクセス時
間を短縮するうえで大きな効果が得られる。
As explained above, in the high-density integrated circuit according to the present invention, a desired delay time can be created with high precision. Therefore, in a memory control circuit, for example, the timing of the control signal can be brought closer to the permissible limit, and a great effect can be obtained in shortening the access time.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の原理図。 第2図は作用の説明図。 第3図は実施例の構成図である。 図中。 1は遅延回路、11〜1nは論理素子。 2はカウンタ、    3は選択回路。 4は単安定マルチバイブレークを指す。 第1図 (島 作用の説明図 第2図 第 3 図 FIG. 1 is a diagram showing the principle of the present invention. FIG. 2 is an explanatory diagram of the action. FIG. 3 is a configuration diagram of the embodiment. In the figure. 1 is a delay circuit, and 11 to 1n are logic elements. 2 is a counter, 3 is a selection circuit. 4 refers to a monostable multibibreak. Figure 1 (island Diagram of action Figure 2 Figure 3

Claims (1)

【特許請求の範囲】 複数個の論理素子(11〜1n)を直列接続して構成し
た遅延回路(1)と、 前記遅延回路(1)に与えられる入力パルスを計数する
カウンタ(2)と、 前記複数個の論理素子(11〜1n)の各々の出力パル
スを選択する選択回路(3)とを備えることを特徴とす
る集積回路。
[Scope of Claims] A delay circuit (1) configured by connecting a plurality of logic elements (11 to 1n) in series; a counter (2) that counts input pulses applied to the delay circuit (1); An integrated circuit comprising: a selection circuit (3) for selecting an output pulse of each of the plurality of logic elements (11 to 1n).
JP61127794A 1986-06-02 1986-06-02 Integrated circuit Pending JPS62284518A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61127794A JPS62284518A (en) 1986-06-02 1986-06-02 Integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61127794A JPS62284518A (en) 1986-06-02 1986-06-02 Integrated circuit

Publications (1)

Publication Number Publication Date
JPS62284518A true JPS62284518A (en) 1987-12-10

Family

ID=14968839

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61127794A Pending JPS62284518A (en) 1986-06-02 1986-06-02 Integrated circuit

Country Status (1)

Country Link
JP (1) JPS62284518A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63228495A (en) * 1987-03-18 1988-09-22 Hitachi Ltd Mos memory
JPH01241222A (en) * 1988-03-22 1989-09-26 Nec Corp Ad converter
JPH0289294A (en) * 1988-09-27 1990-03-29 Nec Corp Semiconductor integration circuit
US5014242A (en) * 1987-12-10 1991-05-07 Hitachi, Ltd. Semiconductor device for a ram disposed on chip so as to minimize distances of signal paths between the logic circuits and memory circuit
WO1995002885A1 (en) * 1993-07-13 1995-01-26 Seiko Epson Corporation Semiconductor memory device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63228495A (en) * 1987-03-18 1988-09-22 Hitachi Ltd Mos memory
US5014242A (en) * 1987-12-10 1991-05-07 Hitachi, Ltd. Semiconductor device for a ram disposed on chip so as to minimize distances of signal paths between the logic circuits and memory circuit
US5367490A (en) * 1987-12-10 1994-11-22 Hitachi, Ltd. Semiconductor integrated circuit device with two variable delay lines in writing circuit control
JPH01241222A (en) * 1988-03-22 1989-09-26 Nec Corp Ad converter
JPH0289294A (en) * 1988-09-27 1990-03-29 Nec Corp Semiconductor integration circuit
WO1995002885A1 (en) * 1993-07-13 1995-01-26 Seiko Epson Corporation Semiconductor memory device

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