JPS62283486A - Magnetic bubble memory device - Google Patents

Magnetic bubble memory device

Info

Publication number
JPS62283486A
JPS62283486A JP61125778A JP12577886A JPS62283486A JP S62283486 A JPS62283486 A JP S62283486A JP 61125778 A JP61125778 A JP 61125778A JP 12577886 A JP12577886 A JP 12577886A JP S62283486 A JPS62283486 A JP S62283486A
Authority
JP
Japan
Prior art keywords
magnetic field
coil
rotating magnetic
transfer
bubble memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP61125778A
Other languages
Japanese (ja)
Inventor
Satoshi Takahashi
聡 高橋
Naoki Miyamoto
直樹 宮本
Koji Oba
大庭 幸治
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Hitachi Consumer Electronics Co Ltd
Japan Display Inc
Original Assignee
Hitachi Device Engineering Co Ltd
Hitachi Ltd
Hitachi Consumer Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Device Engineering Co Ltd, Hitachi Ltd, Hitachi Consumer Electronics Co Ltd filed Critical Hitachi Device Engineering Co Ltd
Priority to JP61125778A priority Critical patent/JPS62283486A/en
Publication of JPS62283486A publication Critical patent/JPS62283486A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To improve a bubble transfer characteristic by attaching a bubble memory chip and a rotating magnetic field generating coil by relatively shifting the angle of a rotating direction. CONSTITUTION:The setting is carried out in such a manner that the phase difference phi3 between the chips 1a, 1b and the rotating magnetic field generating X coil 3a, Y coil 3b substantially goes to zero and the peak values of the rotating magnetic field are substantially situated at the positions of 0 deg., 90 deg., 180 deg., 270 deg.. Thereby, the rotating magnetic field strength becomes larger at 0 deg., 180 deg. according to the gap transfer of a basic transfer path in a minor loop limiting the ceiling value side of the transfer bias magnetic field margin of the chip, the driving force during the gap transfer is increased, and the rotating magnetic field strength becomes larger at 90 deg., 270 deg., too and the transfer force at the time of a start is improved in a start/stop operation.

Description

【発明の詳細な説明】 3、発明の詳細な説明 〔産業上の利用分野〕 本発明は磁気バブルメモリチップに最適な回転磁界を与
えるのに好適な磁気バブルメモリ装置に関するものであ
る。
Detailed Description of the Invention 3. Detailed Description of the Invention [Field of Industrial Application] The present invention relates to a magnetic bubble memory device suitable for providing an optimum rotating magnetic field to a magnetic bubble memory chip.

〔従来の技術〕[Conventional technology]

一般に磁気バブルメモリ装置において、磁気バブルを転
送用パターン間で転送するためには、磁気バブルが存在
する磁性薄膜面内に面方向の回転磁界を与えることが必
要である。
Generally, in a magnetic bubble memory device, in order to transfer magnetic bubbles between transfer patterns, it is necessary to apply a rotating magnetic field in the in-plane direction within the plane of the magnetic thin film where the magnetic bubbles exist.

第5図は通常用いられている磁気パズルメモリ装置の一
例を示す要部平面図である。同図において、内部に磁気
バブルメモリチップ1が収納配置された基板2の外周面
には回転磁界発生用のXコイル3&およびYコイル3b
が互いに直交して配置されている。そして、Xコイル3
mには第6図に示すような回転磁界発生用の三角波電流
IXを流し、Yコイル3bには三角波電流Ixよりも位
相φ!が90°遅れた三角波電流工Yを流すことによっ
て、磁気バブルメモリチップ1の面内には第7図に示す
ように各電流Ix、Iyにより形成される回転磁界が合
成された矩形状の磁界軌跡を有し。
FIG. 5 is a plan view of essential parts of an example of a commonly used magnetic puzzle memory device. In the figure, an X coil 3 and a Y coil 3b for generating a rotating magnetic field are provided on the outer peripheral surface of a substrate 2 in which a magnetic bubble memory chip 1 is housed.
are arranged perpendicular to each other. And X coil 3
A triangular wave current IX for generating a rotating magnetic field as shown in FIG. 6 is passed through the Y coil 3b, and the phase φ! By flowing a triangular wave current Y with a delay of 90°, a rectangular magnetic field is created within the plane of the magnetic bubble memory chip 1, which is a combination of the rotating magnetic fields formed by the currents Ix and Iy, as shown in FIG. It has a trajectory.

かつ反時計方向に回転する回転磁界が与えられる。A rotating magnetic field that rotates counterclockwise is applied.

このよらな回転磁界発生方法によれば、合成された回転
磁界の強度は第7図から明らかなように位相φ2がO’
、 90’、 180°、270° で最大となる。
According to this method of generating a rotating magnetic field, the intensity of the combined rotating magnetic field is such that the phase φ2 is O' as is clear from FIG.
, 90', 180°, and 270°.

なお、第5図に示すような従来のE字状配線基板は例え
ば特開昭53−78130号公報で知られている。
Incidentally, a conventional E-shaped wiring board as shown in FIG. 5 is known from, for example, Japanese Patent Laid-Open No. 78130/1983.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

しかしながら、このように構成される磁気パプルメモリ
装置において、前述した回転磁界発生用のXコイル3a
およびYコイル3bを駆動させる回転磁界駆動回路は、
その回路定数により第8図に示すように位相の最大値が
O’、 90″′、 180°。
However, in the magnetic pulse memory device configured in this way, the above-mentioned X coil 3a for generating a rotating magnetic field is
And the rotating magnetic field drive circuit that drives the Y coil 3b is
Due to the circuit constants, the maximum phase values are O', 90'', and 180°, as shown in Figure 8.

270° よりもφ3だけ遅れ、理想的な回転磁界が得
られず、磁気バブル転送特性が低下するという問題があ
った。
There was a problem in that the rotation was delayed by φ3 from 270°, an ideal rotating magnetic field could not be obtained, and the magnetic bubble transfer characteristics deteriorated.

本発明は、良好な磁気バブル転送特性が得られる磁気バ
ブルメモリ装置を提供することを目的としている。
An object of the present invention is to provide a magnetic bubble memory device that can obtain good magnetic bubble transfer characteristics.

〔問題点を解決するための手段〕[Means for solving problems]

本発明の一実施例によれば、Xコイル、Yコイルの電流
位相が遅れる分のみXコイル、Yコイルと磁気バブルメ
モリチップとの相対的な位fit’l=ずらして取り付
けることにより、実質上1回転磁界ノピークカ00.9
0″、180u、270°K fa 定すレル磁気パズ
ルメモリ装置が提供される。
According to one embodiment of the present invention, the relative positions of the X coil, Y coil and the magnetic bubble memory chip are shifted by the amount that the current phases of the X coil and Y coil are delayed, so that substantially One rotation magnetic field no peak force 00.9
0'', 180u, 270°Kfa is provided.

〔作用〕[Effect]

本発明においては、Xコイル、Yコイルと磁気バブルメ
モリチップとの相対的な位置関係が一致され、磁気バブ
ルメモリチップに与えられる回転磁界が0°、90°、
180°、 270’の位置で実質上最大となる。
In the present invention, the relative positions of the X coil, the Y coil, and the magnetic bubble memory chip are matched, and the rotating magnetic field applied to the magnetic bubble memory chip is 0°, 90°,
It is substantially maximum at the 180° and 270' positions.

〔実施例〕〔Example〕

以下、図面を用いて本発明の実施例を詳細に説明する。 Embodiments of the present invention will be described in detail below with reference to the drawings.

第1図は本発明による磁気バブルメモリ装置の一実施例
を示す要部破断斜視図であシ、前述の図と同一部分は同
一符号を付しである。同図において、la、ibは情報
を磁気パズルで書き込み、読み出しおよび記憶を行なう
並設された2個の磁気バブルメモリチップ(以下チップ
と称する)、2は2個のチップia、 1bを所定の搭
載部2aK接着して固定配置させるプ1)ント配線基板
(以下基板と称する)、3a、3bはテップ1a、lb
の外周部にX軸、Y軸方向に互いに直交して巻設されチ
ップ1a、ibに磁気バブル駆動用の回転磁界を印加す
る回転磁界発生用のXコイル、Yコイル、4はXコイル
3& 、Yコイル3b組立体の外面に配設されてチップ
1a、1bにバイアス磁界を印加するバイアス磁昂発生
用永久磁石板(以下永久磁石板と称する)、5は永久磁
石板4のYコイル3b外面に接触配置されてチップ1a
、lbに印加させるバイアス磁界を均一化させる整磁板
、6はチップla、1bを搭載した基板2の背面側周縁
部に配設されてチップia、ibの磁気バブルクリア、
テスティング用磁界を発生させるループ状のバイアス磁
界発生用コイル(以下バイアスコイルと称する)であり
、このバイアスコイル6の背面側には図示されないが、
前述した永久磁石板4および整磁板5と同一構成の永久
磁石板および整磁板が各一対となって配設されている。
FIG. 1 is a cutaway perspective view of essential parts showing an embodiment of a magnetic bubble memory device according to the present invention, and the same parts as those in the previous figures are given the same reference numerals. In the figure, la and ib are two parallel magnetic bubble memory chips (hereinafter referred to as chips) that write, read, and store information in the form of magnetic puzzles, and 2 are two chips ia and 1b arranged in a predetermined manner. Mounting part 2aK is bonded and fixedly arranged 1) Print wiring board (hereinafter referred to as board), 3a and 3b are steps 1a and lb
An X coil, a Y coil, and a Y coil 4 are wound around the outer periphery of the X-coil 3 and Y-axis to apply a rotating magnetic field for driving magnetic bubbles to the chips 1a and ib so as to be orthogonal to each other in the X-axis and Y-axis directions, respectively. A permanent magnet plate (hereinafter referred to as a permanent magnet plate) for generating bias magnetism that is disposed on the outer surface of the Y coil 3b assembly and applies a bias magnetic field to the chips 1a and 1b; 5 is the outer surface of the Y coil 3b of the permanent magnet plate 4; The chip 1a is placed in contact with the chip 1a.
, 1b is a magnetization plate that uniformizes the bias magnetic field applied to the chips 1a, 1b, and 6 is disposed on the peripheral edge of the back side of the substrate 2 on which the chips 1a and 1b are mounted to clear the magnetic bubbles of the chips 1a and 1b.
This is a loop-shaped bias magnetic field generating coil (hereinafter referred to as bias coil) that generates a testing magnetic field, and although not shown on the back side of this bias coil 6,
A pair of permanent magnet plates and a magnetic shunt plate having the same configuration as the permanent magnet plate 4 and magnetic shunt plate 5 described above are arranged.

7は基板2の第1の端子部2b 、第2の端子部2cに
配設された入出力信号堰り出し用リード(以下リードと
称する)。
Reference numeral 7 designates input/output signal leads (hereinafter referred to as leads) disposed at the first terminal portion 2b and the second terminal portion 2c of the substrate 2.

8は外部磁界を連蔽させるシールドケース(以下ケース
と称する)、9は対向配置された一対の永久磁石板4.
整磁板5に対してチップ1a、ibを搭載した基板2を
所定の傾斜角をもたせてケース8内に固定配置させるモ
ールドレジンである。
Reference numeral 8 indicates a shield case (hereinafter referred to as a case) that shields an external magnetic field, and reference numeral 9 indicates a pair of permanent magnet plates 4.
This is a molded resin for fixing the substrate 2 on which the chips 1a and ib are mounted in the case 8 at a predetermined inclination angle with respect to the magnetic field shunt plate 5.

第2図は第1図で説明したチップia、ibt搭載した
基板2にそれぞれXコイル3aおよびYコイル3bが巻
設された基板組立体t−示す平面図である。同図におい
ては、基板2に対して2個のチップia、ibが互いに
平行度を維持して固定配置されておシ、Xコイル3aお
よびYコイル3bのみが第8図に示す遅れ位相φ3差分
だけ回転させ、傾斜させて固定配置されている。
FIG. 2 is a plan view showing the board assembly t-, in which the X coil 3a and the Y coil 3b are wound around the board 2 on which the chips ia and ibt described in FIG. 1 are mounted, respectively. In the figure, two chips ia and ib are fixedly arranged with respect to the substrate 2 while maintaining parallelism with each other, and only the X coil 3a and the Y coil 3b have the delayed phase φ3 difference shown in FIG. It is only rotated, tilted and fixedly placed.

このような構成によれば、チップit、ibとXコイル
3a、Yコイル3bとの位相差φ3がほぼ零となり、第
7図に示すように回転磁界のピーク値が実質上0°、9
0°、180°、 2700の位置に設定される。これ
によって磁気バブルメモリチップの転送バイアス磁界マ
ージンの上限値側を制限しているマイナループ内の基本
転送路のギャップ転送で回転磁界強度が0°、180°
で大きくなるので、ギャップ転送間の駆動力が増加する
とともに回転磁界強度が90’、270°でも大きくな
るので、スタート/ストップ動作において、スタート時
の転送力を向上させることができる。
According to such a configuration, the phase difference φ3 between the chips it and ib and the X coil 3a and Y coil 3b becomes almost zero, and the peak values of the rotating magnetic field become substantially 0° and 9°, as shown in FIG.
Set at 0°, 180°, and 2700 positions. This limits the upper limit of the transfer bias magnetic field margin of the magnetic bubble memory chip.The rotating magnetic field strength changes from 0° to 180° in the gap transfer of the basic transfer path in the minor loop.
Since the driving force during gap transfer increases and the strength of the rotating magnetic field also increases at 90' and 270 degrees, it is possible to improve the transfer force at the time of start/stop operation.

第3図は本発明による磁気パズルメモリ装置の他の実施
例を説明するための基板組立体の平面図であり、前述の
図と同一部分は同一符号を付しである。同図において、
第2図と異なる点は、基板2に対してXコイル3aおよ
びYコイル3bは互いに平行度を維持して固定配置され
ており、2個のチップ1m、1bのみが遅れ位相φ、差
分だけ回転させ、傾斜させて固定配置されている。
FIG. 3 is a plan view of a substrate assembly for explaining another embodiment of the magnetic puzzle memory device according to the present invention, and the same parts as in the previous figures are given the same reference numerals. In the same figure,
The difference from Fig. 2 is that the X coil 3a and Y coil 3b are fixedly arranged with respect to the substrate 2 while maintaining parallelism with each other, and only the two chips 1m and 1b are rotated by the difference in phase φ with a delay in the two chips 1m and 1b. It is tilted and fixedly arranged.

このような構成においてもチップla、lbとXコイル
3a 、Yコイル3bとの位相φ3差がほぼ零となり、
前述と同様の作用により全く同等の効果が得られる。
Even in this configuration, the phase difference φ3 between the chips la and lb and the X coil 3a and Y coil 3b is almost zero,
Exactly the same effect can be obtained by the same action as described above.

なお、前述した実施例においては、チップ1a。Note that in the embodiment described above, the chip 1a.

1bおよびXコイル3a、Yコイル3bのいずれか一方
を遅れ位相φ3のみ回転させ、傾斜させた場合について
説明したが1本発明はこれに限定されるものではなく、
第4図に示すように基板2の外形を遅れ位相φ3差分の
み傾斜させ、チップ1a。
1b, the X coil 3a, and the Y coil 3b are rotated and tilted by the delayed phase φ3, but the present invention is not limited to this.
As shown in FIG. 4, the outer shape of the substrate 2 is tilted by a delay phase difference of φ3 to form a chip 1a.

1bは傾斜させることなく正常な位置に配置し。Place 1b in its normal position without tilting it.

Xコイル3a、3bが基板2の傾斜に対応して位相φ3
差のみ傾斜して配置される構成であっても前述と同様の
効果が得られる。
The X coils 3a and 3b have a phase of φ3 corresponding to the inclination of the substrate 2.
The same effect as described above can be obtained even with a configuration in which only the difference is inclined.

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明によれば、磁気バブルメモリ
チップと回転磁界発生用コイルとを相対的な位置をずら
して取り付けることにより、回転磁界の位相差のずれを
補正することができるので。
As explained above, according to the present invention, by attaching the magnetic bubble memory chip and the rotating magnetic field generating coil with their relative positions shifted, it is possible to correct the shift in the phase difference of the rotating magnetic field.

周辺回路の定数等を変更することなく、簡単な調整で磁
気バブル転送りf性の極めて良好な磁気バブルメモリ装
置が得られる。
A magnetic bubble memory device with extremely good magnetic bubble transfer characteristics can be obtained by simple adjustment without changing the constants of peripheral circuits.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明による磁気バブルメモリ装置の一突施例
を示す一部破断胴視図、第2図は第1図の基板組立体を
示す千面図、第3図および第4図は本発明の他の実施例
を示す基板組立体の平面図、第5図ないし第8図は従来
の磁気パズルメモリ装置の構成およびその機能、動作を
説明する図である。 1 、ia、1b・・・・磁気バブルメモリチップ(チ
ップ)、2・・・・プリント配線基板(基板)。 2& ・・・・搭載部、2b、2c ・・・・端子部、
3a  Φ畢・1Xコイル、3b−−−−Yコイル。 、7′
FIG. 1 is a partially cutaway trunk view showing an embodiment of the magnetic bubble memory device according to the present invention, FIG. 2 is a 100-sided view showing the board assembly of FIG. 1, and FIGS. FIGS. 5 to 8 are plan views of a substrate assembly showing other embodiments of the present invention, and are diagrams for explaining the configuration, functions, and operations of a conventional magnetic puzzle memory device. 1, ia, 1b...Magnetic bubble memory chip (chip), 2...Printed wiring board (substrate). 2&...Mounting part, 2b, 2c...Terminal part,
3a φ/1X coil, 3b---Y coil. ,7′

Claims (1)

【特許請求の範囲】[Claims] 1、磁気バブルメモリチップと、前記磁気バブルメモリ
チップの外面に配置される回転磁界発生用コイルとを相
対的に回転方向の角度をずらして取付けることを特徴と
した磁気バブルメモリ装置。
1. A magnetic bubble memory device characterized in that a magnetic bubble memory chip and a rotating magnetic field generating coil disposed on the outer surface of the magnetic bubble memory chip are attached with relative rotational angles shifted.
JP61125778A 1986-06-02 1986-06-02 Magnetic bubble memory device Pending JPS62283486A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61125778A JPS62283486A (en) 1986-06-02 1986-06-02 Magnetic bubble memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61125778A JPS62283486A (en) 1986-06-02 1986-06-02 Magnetic bubble memory device

Publications (1)

Publication Number Publication Date
JPS62283486A true JPS62283486A (en) 1987-12-09

Family

ID=14918607

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61125778A Pending JPS62283486A (en) 1986-06-02 1986-06-02 Magnetic bubble memory device

Country Status (1)

Country Link
JP (1) JPS62283486A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106767455A (en) * 2016-12-15 2017-05-31 惠科股份有限公司 Method for automatic measurement, the equipment of the transmission handing-over platform of driving chip

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106767455A (en) * 2016-12-15 2017-05-31 惠科股份有限公司 Method for automatic measurement, the equipment of the transmission handing-over platform of driving chip

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