JPS62281374A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS62281374A
JPS62281374A JP61122306A JP12230686A JPS62281374A JP S62281374 A JPS62281374 A JP S62281374A JP 61122306 A JP61122306 A JP 61122306A JP 12230686 A JP12230686 A JP 12230686A JP S62281374 A JPS62281374 A JP S62281374A
Authority
JP
Japan
Prior art keywords
light
mirror
light emitting
semiconductor
emitting element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP61122306A
Other languages
Japanese (ja)
Inventor
Shigeaki Yamashita
山下 茂明
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Omron Corp
Original Assignee
Omron Tateisi Electronics Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Omron Tateisi Electronics Co filed Critical Omron Tateisi Electronics Co
Priority to JP61122306A priority Critical patent/JPS62281374A/en
Publication of JPS62281374A publication Critical patent/JPS62281374A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58Optical field-shaping elements
    • H01L33/60Reflective elements

Abstract

PURPOSE:To contrive accomplishment of efficient utilization of luminous flux by a method wherein a reflection mirror, desirably a concaved reflection mirror, is arranged in front of a semiconductor light emitting element or a light receiving element, and the back side of said element is used as the light projecting surface or the light receiving surface of the title semiconductor device. CONSTITUTION:A concave mirror 1, having a rotary paraboloid of curved surface formed by the locus of the point at equal distance from a fixed plane surface and a fixed point on the mirror face, is used as a reflecting mirror, a semiconductor light emitting element chip is arranged on the focus F, end the light emitting surface faces mirror-face of concave mirror 1. The light emitted from the light emitting element chip is converted into a parallel flux of light by the concave mirror 1, and the flux of light advances toward the rear of the chip. Said semiconductor light projecting device has the solid angle omega1 of 2pi steradians. Accordingly, not only the output light in optic-axial direction, but also the output light vertical to the optical axis can be utilized efficiently as the incident light.

Description

【発明の詳細な説明】 3、発明の詳細な説明 発明の要約 従来、半導体発光素子または受光素子の前面にレンズを
配置して光束の平行化、集光その他の作用を行なってい
たものに対して1反射鏡、好ましくは凹面反射鏡を設け
1かっこれらの素子チップを投光、受光装置の投光、受
光面と逆向きに配置したことを特徴とする。
[Detailed Description of the Invention] 3. Detailed Description of the Invention Summary of the Invention Conventionally, a lens was placed in front of a semiconductor light emitting element or a light receiving element to collimate, condense, and perform other functions. The device is characterized in that one reflecting mirror, preferably a concave reflecting mirror, is provided, and these element chips are arranged in opposite directions to the light emitting and light receiving surfaces of the light emitting and receiving device.

発明の青葉 技術分野 この発明は半導体装置、さらに詳しくは半導体投光装置
または半導体受光装置に関する。
TECHNICAL FIELD OF THE INVENTION The present invention relates to a semiconductor device, and more particularly to a semiconductor light projector or a semiconductor light receiver.

従来技術とその問題点 この種の半導体装置は半導体発光素子または半導体受光
素子を含んでいる。投光装置においては発光素子の発光
出力光を集光または平行光に変換するために、受光装置
においては入射光を受光素子上に適切に集光するために
何らかの光学系を備えている。第5図はこれらの従来の
半導体装置の一例を示している。同図(a)は樹脂封止
タイプのもので、半導体発光または受光素子を樹脂1[
で封止するときにこの樹脂の一部11aを半球状に形成
してこの部分を樹脂レンズとしている。同図(b)およ
び(C)は金属ステム・タイプのもので半導体発光また
は受光素子を内部に収めたキャップ12の前面にガラス
・レンズ13を設けるか、またはキャップ12の窓12
aの内側にレンズ(図示略)を設けている。
Prior Art and its Problems This type of semiconductor device includes a semiconductor light emitting element or a semiconductor light receiving element. A light projecting device is equipped with some kind of optical system in order to condense or convert the output light of a light emitting element into parallel light, and a light receiving device is equipped with some kind of optical system in order to appropriately condense incident light onto a light receiving element. FIG. 5 shows an example of these conventional semiconductor devices. Figure (a) shows a resin-sealed type, in which the semiconductor light-emitting or light-receiving element is sealed with resin 1[
When sealing is performed, a portion 11a of this resin is formed into a hemispherical shape, and this portion is used as a resin lens. Figures (b) and (c) are of a metal stem type, and a glass lens 13 is provided on the front surface of the cap 12 which houses a semiconductor light emitting or light receiving element inside, or a window 12 of the cap 12 is provided.
A lens (not shown) is provided inside a.

いずれにしてもこれら従来の半導体装置においては、第
6図に投光装置の例を図式的に示すように、半導体発光
素子または受光素子のチンブI4の前面(すなわちこれ
らの素子チップの発光面または受光面の前方)に光学系
を構成するレンズ15(第5図のlLa、 13等に相
当)を配置して集光または平行化を行なっている。しか
しながら、このような(を成では、光束の利用率を考え
ると、実用上光量不足や受光感度不足で、半導体発光/
受光装置を使用する機器の性能を制限する場合が多い。
In any case, in these conventional semiconductor devices, as shown schematically in an example of a light projecting device in FIG. A lens 15 (corresponding to LLa, 13, etc. in FIG. 5) constituting an optical system is arranged in front of the light receiving surface to condense or collimate light. However, when considering the utilization rate of the luminous flux, in this type of structure, there is insufficient light quantity and insufficient light receiving sensitivity in practical use, and semiconductor light emitting/
This often limits the performance of equipment that uses the light receiving device.

第7図は発光ダイオードの配光パターンを示している。FIG. 7 shows the light distribution pattern of the light emitting diode.

この図からも分るように1発光ダイオードからはその光
軸V方向のみならず光軸に垂直な方向Hにもかなりの光
が出射している。ところが。
As can be seen from this figure, a considerable amount of light is emitted from one light emitting diode not only in the direction of its optical axis V but also in the direction H perpendicular to the optical axis. However.

第6図に示す構成では、チップ14から出射する光束の
有効利用立体角ω2はせいぜい(2/3)πステラジア
ン程度であり、光軸方向の光しか利用久7 できないことになる。この有効利用立体角を2?ラジア
ンとすることができればほとんどすべての出射光を利用
することができるようになる。このことは、受光装置に
ついてもほぼ同じようにあてはまる。
In the configuration shown in FIG. 6, the effective solid angle ω2 of the light beam emitted from the chip 14 is approximately (2/3)π steradian at most, and only light in the optical axis direction can be used. This effective solid angle is 2? If it can be made into radians, almost all of the emitted light can be used. This also applies to the light receiving device in almost the same way.

発明の概要 発明の目的 この発明は、光束の利用率の高い半導体装置を提供する
ことを目的とする。
SUMMARY OF THE INVENTION OBJECTS OF THE INVENTION An object of the present invention is to provide a semiconductor device with high utilization of luminous flux.

発明の構成および効果 この発明による半導体装置は、半導体発光または受光素
子の前面に反射鏡、好ましくは凹面反射鏡を配置し、こ
の素子の後側を装置の投光面または受光面としたことを
特徴とする。
Structure and Effects of the Invention The semiconductor device according to the present invention has a reflecting mirror, preferably a concave reflecting mirror, arranged in front of a semiconductor light emitting or light receiving element, and the rear side of this element is used as a light emitting surface or a light receiving surface of the device. Features.

この構成とすることによって、+導体投光/受光装置は
理論的には光束に対する2πステラジアンの有効立体角
をもつことができ、従来のものに比べて約3倍の光束の
を効利用を図ることかできる。
With this configuration, the + conductor light emitter/receiver can theoretically have an effective solid angle of 2π steradians with respect to the luminous flux, making effective use of approximately three times the luminous flux compared to conventional systems. I can do it.

実施例の説明 第1図は、半導体投光装置に適用したこの発明の構成を
図式的に示すものである。反射鏡としては、1足手面と
1定点から等距離にある点の軌跡が形成する曲面である
回転放物面をv1面にもつ凹面鏡1が用いられており、
その焦点Fに半導体発光素子チップが配置されており、
その発光面か凹面鏡1の鏡面を向いている。発光素子チ
ップから出射された光は凹面鏡1によって平行光束に変
換され、チップの後方に向って進む。このような構成と
すると、この半導体投光装置は2πステラジアンの立体
角ω1をもつ。これによって、第7図に示す光軸方向の
出力光のみならず光軸に垂直な方向の出力光をも投射光
として有効に利用できるようになる。
DESCRIPTION OF EMBODIMENTS FIG. 1 schematically shows the configuration of the present invention applied to a semiconductor light projector. As the reflecting mirror, a concave mirror 1 is used, which has a paraboloid of revolution on its v1 surface, which is a curved surface formed by the locus of points equidistant from one foot surface and one fixed point.
A semiconductor light emitting element chip is placed at the focal point F,
Its light emitting surface faces the mirror surface of the concave mirror 1. Light emitted from the light emitting element chip is converted into a parallel beam of light by the concave mirror 1, and travels toward the rear of the chip. With such a configuration, this semiconductor light projector has a solid angle ω1 of 2π steradians. As a result, not only the output light in the direction of the optical axis shown in FIG. 7 but also the output light in the direction perpendicular to the optical axis can be effectively used as projection light.

第2図は1実際の半導体投光装置または半導体受光装置
を示している。リード・フレーム2上に固定された素子
チップ[4が樹脂3によって封1ヒされている。この樹
脂3のチップ14前面側には凹面鏡1があり、後面側が
投光面または受光1Iii3aとなっている。リード・
フレーム2はできるたけ幅の狭いものが好ましい。
FIG. 2 shows an actual semiconductor light projector or semiconductor light receiver. An element chip [4] fixed on a lead frame 2 is sealed with a resin 3. There is a concave mirror 1 on the front side of the chip 14 of this resin 3, and the rear side is a light projecting surface or a light receiving surface 1Iiii3a. Lead
It is preferable that the frame 2 be as narrow as possible.

このような半導体装置は一例として次のようにして作成
される。
As an example, such a semiconductor device is manufactured as follows.

リード・フレーム2に′ト導体チップ14を載置し8波
なワイヤボンディングを行ない、この後回転放物面をも
つ成形金型を用いてエポキン樹脂3で低圧成形する。成
形温度は150〜170°C1時間は3分程度である。
The conductive chip 14 is placed on the lead frame 2 and eight-wave wire bonding is performed, and then low-pressure molding is performed with Epoquin resin 3 using a molding die having a paraboloid of revolution. The molding temperature is 150 to 170°C and one hour is about 3 minutes.

次に、成形されたもの全体を真空蒸着装置内に入れ、役
、受光面3a等の放物面以外の表面をマスキングして放
物面側にたとえばアルミニウムを蒸着することによって
凹面鏡1を形成する。
Next, the entire molded product is placed in a vacuum evaporation apparatus, surfaces other than the paraboloid, such as the light-receiving surface 3a, are masked, and aluminum, for example, is vapor-deposited on the paraboloid side, thereby forming the concave mirror 1. .

凹面の反射鏡としては回転放物面以外の種々の形状のも
のが用いられよう。
Various shapes other than a paraboloid of revolution may be used as the concave reflecting mirror.

たとえば、第3図に示すように、2定点からの距離の和
が一定な点の軌跡が形成する曲面である回転楕円面をも
つ反射鏡は、2つの焦点fl。
For example, as shown in FIG. 3, a reflecting mirror having an ellipsoid of revolution, which is a curved surface formed by the trajectory of points whose sum of distances from two fixed points is constant, has two focal points fl.

f をもつ。そこで、一方の焦点f1に発光素子を置く
とその発光光束は他方の焦点f2に焦光する。これは、
たとえば収束光を先ファイバに6゛効に入光させる手段
として利用できよう。
It has f. Therefore, when a light emitting element is placed at one focal point f1, the luminous flux thereof is focused on the other focal point f2. this is,
For example, it could be used as a means to make the convergent light enter the destination fiber with a 6° effect.

第4図に示すように、2定点からの距離の差か一定な点
の軌跡が形成する曲面である回転双曲面ちまた2つの焦
点f、f2をもつ。−h′の焦点■ flに発光素子を置くとこの曲面で反射された光束はあ
たかももう1つの焦点f、から放射されるかのように反
q・1される。焦点f1に置かれる素子としては1発光
素子よりもむしろ受光素子の方が好ましく、このような
反射面をもつ反射鏡は受光装置に利用されよう。
As shown in FIG. 4, a hyperboloid of revolution, which is a curved surface formed by the difference in distance from two fixed points or the locus of constant points, also has two focal points f and f2. When a light emitting element is placed at the focal point f of −h', the light beam reflected by this curved surface is reflected by q·1 as if it were radiated from another focal point f. As the element placed at the focal point f1, a light-receiving element is preferred rather than a single light-emitting element, and a reflecting mirror having such a reflective surface may be used in a light-receiving device.

さらに他の例として回転放物面と回転双曲面の曲面の組
合せのような1直線と1定点からの距離の差が一定な点
の軌跡が形成する曲面を反射面とすることもできよう。
As another example, the reflecting surface may be a curved surface formed by a locus of a straight line and a point with a constant difference in distance from a fixed point, such as a combination of curved surfaces of a paraboloid of revolution and a hyperboloid of revolution.

この場合には、この曲面の焦点に点光源を置くと、光軸
に垂直な一方の軸方向には平行光線か、これに直交する
他方の軸方向には回転双曲面からのような拡散光線が放
射される。
In this case, if a point light source is placed at the focal point of this curved surface, there will be parallel rays in one axis direction perpendicular to the optical axis, or diffused rays such as from a rotation hyperboloid in the other axis direction orthogonal to this. is emitted.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図はこの発明の詳細な説明するための断面図、第2
図はこの発明の実施例を示す断面図、第3図および第4
図は反射鏡の他の曲面の例を示す図である。 第5図(a) 、 (b)および(C)は従来の半導体
装置の例を示す側面図、第6図はその)IM成を図式的
に示す断面図、第7図は発光ダイオードの配光パターン
を示すものである。 1・・・反射鏡、   2・・・リード・フレーム13
・・・樹脂、     3a・・・投光面または受光面
。 14・・・発光素子または受光素子チップ。 以  上 特許出願人  立石電機株式会社 代 理 人  弁理士 牛久 健司 (外1名)第1図 第3図 第4図
Fig. 1 is a sectional view for explaining the invention in detail;
The figures are cross-sectional views showing embodiments of the present invention, Figures 3 and 4.
The figure is a diagram showing an example of another curved surface of the reflecting mirror. Figures 5(a), (b) and (C) are side views showing examples of conventional semiconductor devices, Figure 6 is a sectional view schematically showing its IM configuration, and Figure 7 is a diagram showing the arrangement of light emitting diodes. It shows a light pattern. 1...Reflector, 2...Lead frame 13
...resin, 3a...light emitting surface or light receiving surface. 14...Light emitting element or light receiving element chip. Patent applicant Tateishi Electric Co., Ltd. Representative Patent attorney Kenji Ushiku (1 other person) Figure 1 Figure 3 Figure 4

Claims (1)

【特許請求の範囲】[Claims] 半導体発光または受光素子の前面に反射鏡を配置し、こ
の素子の後側を装置の投光面または受光面としたことを
特徴とする半導体装置。
A semiconductor device characterized in that a reflecting mirror is arranged in front of a semiconductor light emitting or light receiving element, and the rear side of this element is used as a light projecting surface or a light receiving surface of the device.
JP61122306A 1986-05-29 1986-05-29 Semiconductor device Pending JPS62281374A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61122306A JPS62281374A (en) 1986-05-29 1986-05-29 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61122306A JPS62281374A (en) 1986-05-29 1986-05-29 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS62281374A true JPS62281374A (en) 1987-12-07

Family

ID=14832691

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61122306A Pending JPS62281374A (en) 1986-05-29 1986-05-29 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS62281374A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0364806A2 (en) * 1988-10-21 1990-04-25 TEMIC TELEFUNKEN microelectronic GmbH Surface light-emitting device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4982287A (en) * 1972-12-11 1974-08-08
JPS5113209B1 (en) * 1970-12-11 1976-04-26
JPS5990964A (en) * 1982-11-16 1984-05-25 Nec Corp Photodetector
JPS6063970A (en) * 1983-09-17 1985-04-12 Fanuc Ltd Light emitting diode radiating parallel rays

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5113209B1 (en) * 1970-12-11 1976-04-26
JPS4982287A (en) * 1972-12-11 1974-08-08
JPS5990964A (en) * 1982-11-16 1984-05-25 Nec Corp Photodetector
JPS6063970A (en) * 1983-09-17 1985-04-12 Fanuc Ltd Light emitting diode radiating parallel rays

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0364806A2 (en) * 1988-10-21 1990-04-25 TEMIC TELEFUNKEN microelectronic GmbH Surface light-emitting device

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