JPS62281338A - Vapor phase epitaxy method - Google Patents
Vapor phase epitaxy methodInfo
- Publication number
- JPS62281338A JPS62281338A JP12525186A JP12525186A JPS62281338A JP S62281338 A JPS62281338 A JP S62281338A JP 12525186 A JP12525186 A JP 12525186A JP 12525186 A JP12525186 A JP 12525186A JP S62281338 A JPS62281338 A JP S62281338A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- raw material
- specific gravity
- carrier gas
- gases
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims description 18
- 238000000927 vapour-phase epitaxy Methods 0.000 title 1
- 239000007789 gas Substances 0.000 claims abstract description 70
- 230000005484 gravity Effects 0.000 claims abstract description 47
- 239000012159 carrier gas Substances 0.000 claims abstract description 42
- 239000002994 raw material Substances 0.000 claims abstract description 40
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 239000013078 crystal Substances 0.000 claims abstract description 16
- 239000004065 semiconductor Substances 0.000 claims abstract description 15
- 150000001875 compounds Chemical class 0.000 claims abstract description 14
- 229910052704 radon Inorganic materials 0.000 claims abstract description 3
- 229910052724 xenon Inorganic materials 0.000 claims abstract 2
- 238000006243 chemical reaction Methods 0.000 claims description 25
- 150000002902 organometallic compounds Chemical class 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 239000011261 inert gas Substances 0.000 claims description 7
- 239000012808 vapor phase Substances 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 2
- SYUHGPGVQRZVTB-UHFFFAOYSA-N radon atom Chemical compound [Rn] SYUHGPGVQRZVTB-UHFFFAOYSA-N 0.000 claims description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 2
- 229910052786 argon Inorganic materials 0.000 claims 1
- 229910052743 krypton Inorganic materials 0.000 claims 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 claims 1
- 229910052754 neon Inorganic materials 0.000 claims 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 claims 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 18
- VQNPSCRXHSIJTH-UHFFFAOYSA-N cadmium(2+);carbanide Chemical compound [CH3-].[CH3-].[Cd+2] VQNPSCRXHSIJTH-UHFFFAOYSA-N 0.000 abstract description 15
- ILXWFJOFKUNZJA-UHFFFAOYSA-N ethyltellanylethane Chemical compound CC[Te]CC ILXWFJOFKUNZJA-UHFFFAOYSA-N 0.000 abstract description 13
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 abstract description 13
- 229910052753 mercury Inorganic materials 0.000 abstract description 9
- 238000007796 conventional method Methods 0.000 abstract description 6
- 230000003247 decreasing effect Effects 0.000 abstract 2
- 229910004613 CdTe Inorganic materials 0.000 abstract 1
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 4
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 4
- 238000001947 vapour-phase growth Methods 0.000 description 4
- 230000001603 reducing effect Effects 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- -1 alkyl compound Chemical class 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 150000002894 organic compounds Chemical class 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 238000007259 addition reaction Methods 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
Abstract
Description
【発明の詳細な説明】
３、発明の詳細な説明
〔概要〕
Ｍｅｔａｌ−Ｏｒｇａｎｉｃ−Ｃｈｅｍｉｃａｌ−Ｖａ
ｐｏｒ−Ｄｅｐｏｓｉｔｉｏｎ（以下、ＭＯＣＶＤ法と
称する。）による気相エピタキシャル成長方法であって
、複数の有機金属化合物よりなる原料ガスとキャリアガ
ス、或いは複数の有機金属化合物と単体金属元素より成
る原料ガスとキャリアガスとを反応管内に導入し、該反
応管を加熱して複数の有機金属化合物よりなる原料ガス
が分解した金属原子、或いは複数の有機金属化合物と単
体金属元素よりなる原料ガスが分解した金属原子を基板
上に付着させて基板上に化合物半導体結晶を形成する場
合、キャリアガスに比重の大きい不活性ガスを用いて、
反応管に導入される原料ガス間どうしの比重差を少なく
し、反応管内で原料ガスがどうしが均一に混合するよう
にして均一な組成の化合物半導体結晶が形成されるよう
にしたもの。[Detailed Description of the Invention] 3. Detailed Description of the Invention [Summary] Metal-Organic-Chemical-Va
A vapor phase epitaxial growth method using por-deposition (hereinafter referred to as MOCVD method), which uses a raw material gas and a carrier gas consisting of a plurality of organometallic compounds, or a raw material gas and a carrier consisting of a plurality of organometallic compounds and a single metal element. A gas is introduced into a reaction tube and the reaction tube is heated to produce metal atoms decomposed from a raw material gas consisting of a plurality of organometallic compounds, or metal atoms decomposed from a raw material gas consisting of a plurality of organometallic compounds and a single metal element. When depositing on a substrate to form a compound semiconductor crystal on the substrate, an inert gas with a high specific gravity is used as the carrier gas.
A compound semiconductor crystal with a uniform composition is formed by reducing the difference in specific gravity between the raw material gases introduced into the reaction tube and uniformly mixing the raw material gases within the reaction tube.
本発明は化合物半導体結晶を構成する金属原子を含む有
機化合物を分解して基板上にエピタキシャル層を形成す
るＭＯＣＶＤ法に係り、特に化合物半導体結晶を構成す
る金泥原子の組成比が安定して得られるような気相エピ
タキシャル成長方法に関する。The present invention relates to a MOCVD method for forming an epitaxial layer on a substrate by decomposing an organic compound containing metal atoms constituting a compound semiconductor crystal, and in particular, it is possible to obtain a stable composition ratio of gold mud atoms constituting the compound semiconductor crystal. This invention relates to a vapor phase epitaxial growth method.
反応容器内に例えばテルル化カドミウム（ＣｄＴｅ）よ
りなる基板と、化合物半導体結晶の構成原子であるカド
ミウム（Ｃｄ）原子を含むアルキル化合物のジメチルカ
ドミウム、（（ＣＩ＋ ３） ２ Ｃｄ）と、テルル（
Ｔｅ）原子を含むアルキル化合物のジエチルテルル（（
Ｃ２Ｈｓ ） ２ Ｔｅ） と、水銀（Ｈｇ）と、キャ
リアガスとしての水素ガスを導入し、この反応容器内を
加熱することで、前記ジメチルカドミウムとジエチルテ
ルルを分解し、これ等のアルキル化合物より分解された
Ｃｄ原子とＴｅ原子と、更にＨｇ原子より構成されるＨ
ｇ ＋−ｘ Ｃｄ ｙ Ｔ ｅの化合物半導体を基板
上に気相成長するＭＯＣＶＤ法は周知である。In a reaction vessel, a substrate made of, for example, cadmium telluride (CdTe), dimethyl cadmium ((CI+ 3) 2 Cd), an alkyl compound containing cadmium (Cd) atoms, which are constituent atoms of a compound semiconductor crystal, and tellurium (
diethyl tellurium ((
By introducing C2Hs) 2Te), mercury (Hg), and hydrogen gas as a carrier gas and heating the inside of this reaction vessel, the dimethylcadmium and diethyltellurium are decomposed, and their alkyl compounds are decomposed. H composed of Cd atoms, Te atoms, and Hg atoms
The MOCVD method in which a compound semiconductor of g + -x Cd y T e is grown in a vapor phase on a substrate is well known.
このようなアルキル化合物を分解して基板上にＣｄ原子
と、Ｔｅ原子と、更にＨｇ原子をＨｇ ＋−ｘ Ｃｄ
ｘＴｅの結晶層として形成する際、Ｃｄ原子とＴｅ原子
とＨｇ原子の組成比を安定してＨｇ、−ｘＣｄ、 Ｔ
ｅの結晶層を形成することが望まれている。Such an alkyl compound is decomposed to form Cd atoms, Te atoms, and Hg atoms on the substrate.
When forming an xTe crystal layer, the composition ratio of Cd atoms, Te atoms, and Hg atoms is stabilized to Hg, -xCd, T.
It is desired to form a crystalline layer of e.
第１図はＨｇ ＋−ｘ Ｃｄ Ｘ Ｔ ｅの気相成長方
法の説明図で、図示するように石英ガラスよりなる反応
管１内にグラファイトよりなる基板設置台２に設置され
たＣｄＴｅよりなる基板３を設置し、この反応管１内に
バルブ４を開いてキャリアガスとしての水素ガスを導入
する。FIG. 1 is an explanatory diagram of the vapor phase growth method of Hg +-x Cd 3 is installed in the reaction tube 1, and a valve 4 is opened to introduce hydrogen gas as a carrier gas into the reaction tube 1.
次いでバルブ５，６．７を開いてジメチルカドミウムの
収容容器８とジエチルテルルの収容容器９と水銀の収容
容器１０に水素ガスを導入し、前記ジメチルカドミウム
、ジエチルテルル、水銀をそれぞれ担持した水素ガスを
反応管１内に導入する。Next, valves 5 and 6.7 are opened to introduce hydrogen gas into the dimethyl cadmium storage container 8, the diethyl tellurium storage container 9, and the mercury storage container 10, and the hydrogen gas supporting the dimethyl cadmium, diethyl tellurium, and mercury, respectively. is introduced into the reaction tube 1.
その後、反応管１の周囲に設けた高周波コイル１１に通
電することで、設置台２を加熱し、水素ガスによって担
持され、反応管１内に導入された有機金属化合物を分解
してＣｄＴｅの結晶層を基板３上に形成している。Thereafter, by energizing the high-frequency coil 11 provided around the reaction tube 1, the installation table 2 is heated, and the organometallic compound supported by the hydrogen gas and introduced into the reaction tube 1 is decomposed into CdTe crystals. A layer is formed on the substrate 3.
Ｃ発明が解決しようとする問題点〕
ところで、従来、このような気相成長方法に於けるキャ
リアガスとしては、還元性の強い水素ガスや、高純度の
状態でガスが得られ、かつ有機化合物を分解する際、付
加反応のような複雑な反応を生じないヘリウム（Ｈｅ）
ガス等をキャリアガスとして用いており、これ等水素ガ
スの比重は０．０６９で、ヘリウムガスの比重は０．１
４でいずれも比重の小さいキャリアガスを用いている。[Problems to be Solved by the Invention] Conventionally, as a carrier gas in such a vapor phase growth method, hydrogen gas with strong reducing properties, gas obtained in a highly pure state, and organic compounds Helium (He) does not cause complex reactions such as addition reactions when decomposing
These hydrogen gases have a specific gravity of 0.069 and helium gases have a specific gravity of 0.1.
4, a carrier gas with a small specific gravity is used in all cases.
このような比重の小さいガスをキャリアガスとして用い
ると、原料ガスの内、比重の大きい水銀を担持した水素
ガスは反応管の底部に滞留し、比重の軽いジメチルカド
ミウム、或いはジエチルテルルを担持した水素ガスは反
応管１の上部に位置するようになってこれらの原料ガス
間の混合が充分行われず、従って基板上に均一な組成の
化合物半導体結晶が得られない問題点を生じる。When such a gas with a low specific gravity is used as a carrier gas, the hydrogen gas supporting mercury, which has a high specific gravity, stays at the bottom of the reaction tube, and the hydrogen gas supporting dimethyl cadmium or diethyl tellurium, which has a low specific gravity, stays at the bottom of the reaction tube. Since the gases are located in the upper part of the reaction tube 1, these source gases are not sufficiently mixed, resulting in a problem that a compound semiconductor crystal having a uniform composition cannot be obtained on the substrate.
本発明は上記した問題点を解決し、キャリアガスに比重
の大きい不活性ガスを用いることで、原料ガスのうちで
比重の小さい原料ガスの比重を見掛は上大きくして原料
ガス相互間で比重の差を小さくして原料ガスどうしが均
一に混合するようにした化合物半導体結晶の製造方法の
提供を目的とする。The present invention solves the above-mentioned problems, and by using an inert gas with a high specific gravity as a carrier gas, the specific gravity of the raw material gas with a low specific gravity among the raw material gases is increased, and the specific gravity of the raw material gases is increased. The object of the present invention is to provide a method for manufacturing a compound semiconductor crystal in which raw material gases are uniformly mixed by reducing the difference in specific gravity.
本発明の気相エピタキシャル成長方法は、反応管内にキ
ャリアガスと有機金属化合物、或いはキャリアガスと有
機金属化合物と単体金属元素を担持した原料ガスを導入
し、該原料ガスを基板上で分解して化合物半導体結晶を
基板上に形成する方法に於いて、キャリアガスに比重の
大きい不活性ガスを用いるようにする。In the vapor phase epitaxial growth method of the present invention, a carrier gas and an organometallic compound, or a carrier gas and an organometallic compound, and a raw material gas carrying a single metal element are introduced into a reaction tube, and the raw material gas is decomposed on a substrate to form a compound. In a method for forming semiconductor crystals on a substrate, an inert gas with a high specific gravity is used as a carrier gas.
本発明の気相エピタキシャル成長方法は、キャリアガス
に比重の大きい不活性ガスを用いることで、キャリアガ
スに混合されている場合の原料ガスのそれぞれの見掛け
の比重を大きくし、もって原料ガス相互間の比重の差が
小さくなるようにして原料ガスどうしが均一に混合し、
組成の安定した化合物半導体結晶が得られるようにする
。In the vapor phase epitaxial growth method of the present invention, by using an inert gas with a high specific gravity as a carrier gas, the apparent specific gravity of each of the raw material gases when mixed with the carrier gas is increased, thereby increasing the gap between the raw material gases. The raw material gases are mixed uniformly so that the difference in specific gravity is small,
To obtain a compound semiconductor crystal with a stable composition.
（実施例）
本発明の実施例として、原料ガスにジメチルカドミウム
、ジエチルテルル、水銀を用いた場合について例を用い
て述べる。(Example) As an example of the present invention, a case will be described in which dimethyl cadmium, diethyl tellurium, and mercury are used as source gases.
第１表、及び第２表ににジメチルカドミウム、ジエチル
テルル、水銀の各々に付いての物理的特性に付いて述べ
る。Tables 1 and 2 describe the physical properties of dimethyl cadmium, diethyl tellurium, and mercury.
ここでＤＭｃｄはジメチルカドミウムを示し、ＤＥＴｅ
はジエチルテルルを示す。Here, DMcd indicates dimethyl cadmium, DETe
indicates diethyl tellurium.
更に本発明の方法で用いるキャリアガスとしての不活性
ガスの物理的性質について第３表に示す。Further, Table 3 shows the physical properties of the inert gas used as a carrier gas in the method of the present invention.
この表で各種キャリアガスの比重は空気を１と第
１ 表
第 ２ 表
して算出した。In this table, the specific gravity of various carrier gases is 1st and 2nd.
Calculations were made using Table 1.
尚、従来の方法で用いていた水素ガスの分子量は２．０
２で、空気を１とした場合の水素ガスの比重は０．０６
９となる。Furthermore, the molecular weight of hydrogen gas used in the conventional method is 2.0.
2, and when air is 1, the specific gravity of hydrogen gas is 0.06
It becomes 9.
ここで本発明の実施例として前記した第１図に示す気相
成長装置を用いて、例えばキャリアガスにＡｒガスを用
い、前記したジメチルカドミウム、ジエチルテルルより
なる有機金属化合物と水銀よりなる単体金属元素を用い
てＭＯＣＶＤ法を用いてＣｄＴｅの基板上にＨｇ ｌ−
ｘ Ｃｄ ｘ Ｔ ｅの結晶層を形第 ３ 表
成する場合に付いて述べる。Here, as an embodiment of the present invention, the above-mentioned vapor phase growth apparatus shown in FIG. Hg l− on a CdTe substrate using the MOCVD method using
A case will be described in which a crystal layer of x Cd x Te is formed as a third surface.
この場合、気相成長に用いる反応管は一端が開放されて
おり、大気中で行われているので反応系の全圧＝１ａｔ
ｍで表される。In this case, one end of the reaction tube used for vapor phase growth is open, and the reaction is carried out in the atmosphere, so the total pressure of the reaction system = 1at
Represented by m.
ここで原料ガスの比重を９ｇとし、原料ガスの分圧をＰ
ｇとし、キャリアガスの比重をρＣとすると、キャリア
ガスの分圧は（１−Ｐｇ）で与えられ、反応系内に於け
る原料ガスとキャリアガスとの混合ガスとの比重ρには
第（１）式に示されるようになる。Here, the specific gravity of the raw material gas is 9g, and the partial pressure of the raw material gas is P
g and the specific gravity of the carrier gas is ρC, the partial pressure of the carrier gas is given by (1-Pg), and the specific gravity ρ of the mixed gas of the raw material gas and carrier gas in the reaction system is given by the (1-Pg). 1) It becomes as shown in the formula.
ρｋ −ρｇＸＰｇ＋ρＣＸ（１−Ｐｇ） ・・・・
・・・・・（１１ここで第１表、第２表、第３表、第（
１）式を用いてＡｒガスをキャリアガスとした時のジメ
チルカドミウムより成る原料ガスとの混合ガスの比重は
、０．０１５７６ ｘ（１ｘｌＯ−’） ＋１．３８
ｘ（１−Ｉ Ｘｌ０−’）≠１．３７９９・・・・・・
（２）
またＡｒガスをキャリアガスとした時のジエチルテルル
より成る原料ガスとの混合ガスの比重は、０．０１７０
４ ｘ（１ｘｌＯ−’） ＋１．３８ｘ（１−１ｘｌ
Ｏ−’）＝ １．３７９９・・・・・・（３）
またＡｒガスをキャリアガスとした時の水銀蒸気よりな
る原料ガスとの混合ガスの比重は、第（４）式％式％
従って最も比重の大きい水銀の蒸気よりなる原料ガスと
、キャリアガスの計ガスとの混合ガスに於ける比重と、
比重の小さいジメチルカドミウムや、ジエチルテルルよ
りなる原料ガスと、キャリアガスの計ガスの混合ガスに
於ける比重の比は、第（５）式のようになる。ρk −ρgXPg+ρCX(1-Pg) ・・・・
......(11Here, Table 1, Table 2, Table 3, Table (
Using the formula 1), when Ar gas is used as a carrier gas, the specific gravity of the mixed gas with the raw material gas consisting of dimethyl cadmium is 0.01576 x (1xlO-') + 1.38
x(1-I Xl0-')≠1.3799...
(2) When Ar gas is used as a carrier gas, the specific gravity of the mixed gas with diethyl tellurium raw material gas is 0.0170.
4 x(1xlO-') +1.38x(1-1xl
O-') = 1.3799 (3) Furthermore, when Ar gas is used as a carrier gas, the specific gravity of the mixed gas with the raw material gas consisting of mercury vapor is expressed by formula (4) % Formula % Therefore, The specific gravity in a mixed gas of a raw material gas consisting of mercury vapor, which has the highest specific gravity, and a total carrier gas,
The ratio of the specific gravity in a mixed gas of a raw material gas consisting of dimethyl cadmium or diethyl tellurium, which has a small specific gravity, and a total carrier gas is expressed by equation (5).
１．５８１ ／１．３７９９＝１．１４５・・・・・・
・（５）ちなみに、従来の方法に於けるキャリアガスと
して水素ガスを用い、原料ガスにジメチルカドミウムを
用いた時の混合ガスの比重は第（６）式のようになる。1.581 /1.3799=1.145...
- (5) Incidentally, when hydrogen gas is used as the carrier gas in the conventional method and dimethyl cadmium is used as the raw material gas, the specific gravity of the mixed gas is as shown in equation (6).
０．０１５７６ Ｘ（ＩＸＩＯ−’） ＋０．０６９
（１−Ｉ Ｘｌ０−’）＝０．０６８９９・・・・・・
（６）
更に従来の方法に於けるキャリアガスとして水素ガスを
用い、原料ガスに水銀の蒸気を用いた時の混合ガスの比
重は第（７）式のようになる。0.01576 X(IXIO-') +0.069
(1-I Xl0-')=0.06899...
(6) Furthermore, when hydrogen gas is used as the carrier gas in the conventional method and mercury vapor is used as the raw material gas, the specific gravity of the mixed gas is as shown in equation (7).
１２．１４ ｘｏ、０６０５＋０．０６９（１−０，０
６０５） ＝０．７９９３・・・・・・・・・（７）
従って最も比重の大きい水銀の蒸気よりなる原料ガスと
、キャリアガスとしての水素ガスを用いた場合の混合ガ
スに於ける比重と、比重の小さいジメチルカドミウムよ
りなる原料ガスと水素ガスとの混合ガスに於ける比重の
比は第（８）式のようになる。12.14 xo, 0605+0.069(1-0,0
605) = 0.7993 (7) Therefore, the specific gravity of the mixed gas when using the raw material gas consisting of mercury vapor, which has the highest specific gravity, and hydrogen gas as the carrier gas. The ratio of specific gravity in a mixed gas of hydrogen gas and a raw material gas made of dimethyl cadmium, which has a small specific gravity, is expressed by equation (8).
０．７９９３１０．０６８９９ ＝ １１．６・・・・
・・（８）即ち、キャリアガスを水素ガスとした従来の
方法に比して、キャリアガスをＡｒガスとした本発明の
実施例に於ける場合は、原料ガスどうしの比重の比が約
１７１０に減少し、原料ガスどうしが反応系内で充分均
一に混合されることが判る。0.799310.06899 = 11.6...
(8) That is, compared to the conventional method using hydrogen gas as the carrier gas, in the embodiment of the present invention using Ar gas as the carrier gas, the ratio of the specific gravity of the raw material gases is about 1710. It can be seen that the raw material gases are mixed sufficiently uniformly within the reaction system.
このような上記した本発明の事項をまとめて第４表に示
す。ここで、ラドン（Ｒｎ）ガスをキャリアガスとして
用いた場合についても述べる。The above-mentioned matters of the present invention are summarized in Table 4. Here, a case where radon (Rn) gas is used as a carrier gas will also be described.
第４表
また比較のために、従来の方法に於ける水素ガスをキャ
リアガスとして用いた場合も示し、前記した原料ガスが
最も比重の大きい水銀とキャリアガスとの混合ガスとの
比重と、原料ガスのうちで比重の小さいジメチルカドミ
ウム、ジエチルテルルとキャリアガスとの混合ガスの比
を併せて示した。For comparison, Table 4 also shows the case where hydrogen gas is used as a carrier gas in the conventional method, and shows the specific gravity of the mixed gas of mercury and carrier gas, in which the raw material gas has the highest specific gravity, and the raw material gas. The ratio of the mixed gas of dimethyl cadmium and diethyl tellurium, which have lower specific gravity among the gases, and the carrier gas is also shown.
第４表より判るように、不活性ガスの比重が大きいＲｎ
のようなキャリアガスを用いるにつれて、原料ガスどう
しの比重の比が少なくなり、原料ガスどうしが尚一層均
一に混合されることが判る。As can be seen from Table 4, Rn has a high specific gravity of inert gas.
It can be seen that as a carrier gas such as .
以上述べたように、本発明の方法によれば、原料ガスど
うしが均一に混合されるので、組成が均一な化合物半導
体のエピタキシャル結晶層が得られ、このような方法で
形成した化合物半導体結晶を用いて赤外線検知素子のよ
うな半導体装置を形成すれば、高性能な装置が得られる
効果がある。As described above, according to the method of the present invention, since the raw material gases are mixed uniformly, an epitaxial crystal layer of a compound semiconductor with a uniform composition can be obtained, and the compound semiconductor crystal formed by such a method can be If a semiconductor device such as an infrared detecting element is formed using this material, a high-performance device can be obtained.
第１図は本発明の詳細な説明図である。
図に於いて、
１は反応管、２は基板設置台、３は基板、４，５゜６．
７はバルブ、８はジメチルカドミウム収容容器、９はジ
エチルテルル収容容器、１０は水銀収容容器、１１はコ
イルを示す。FIG. 1 is a detailed explanatory diagram of the present invention. In the figure, 1 is a reaction tube, 2 is a substrate installation stand, 3 is a substrate, 4,5°6.
7 is a valve, 8 is a dimethyl cadmium container, 9 is a diethyl tellurium container, 10 is a mercury container, and 11 is a coil.
Claims (2)
（１）内に有機金属化合物よりなる原料ガスとキャリア
ガス、或いは有機金属化合物よりなる原料ガスと単体の
金属原子とキャリアガスとを導入し、前記反応管（１）
内を加熱し、前記有機金属化合物を分解して、前記基板
（３）上に前記有機金属化合物の金属原子、或いは単体
の金属原子と有機金属化合物の金属原子より成る化合物
半導体結晶を成長させる場合に於いて、 前記キャリアガスに比重の大きい不活性ガスを用いるこ
とを特徴とする気相エピタキシャル成長方法。(1) A substrate (3) is installed in a reaction tube (1), and a raw material gas made of an organometallic compound and a carrier gas, or a raw material gas made of an organometallic compound and a single metal atom are placed in the reaction tube (1). and carrier gas are introduced into the reaction tube (1).
In the case where a compound semiconductor crystal consisting of metal atoms of the organometallic compound, or single metal atoms and metal atoms of the organometallic compound is grown on the substrate (3) by heating the inside and decomposing the organometallic compound. A vapor phase epitaxial growth method, characterized in that an inert gas with a high specific gravity is used as the carrier gas.
ン（Ａｒ）、クリプトン（Ｋｒ）、キセノン（Ｘｅ）、
ラドン（Ｒｎ）のうちの少なくとも一種類のガスを用い
ることを特徴とする特許請求の範囲第１項に記載の気相
エピタキシャル成長方法。(2) Neon (Ne), argon (Ar), krypton (Kr), xenon (Xe) as the carrier gas,
The vapor phase epitaxial growth method according to claim 1, characterized in that at least one type of gas selected from radon (Rn) is used.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61125251A JPH0732130B2 (en) | 1986-05-29 | 1986-05-29 | Vapor phase epitaxial growth method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61125251A JPH0732130B2 (en) | 1986-05-29 | 1986-05-29 | Vapor phase epitaxial growth method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62281338A true JPS62281338A (en) | 1987-12-07 |
| JPH0732130B2 JPH0732130B2 (en) | 1995-04-10 |
Family
ID=14905494
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61125251A Expired - Lifetime JPH0732130B2 (en) | 1986-05-29 | 1986-05-29 | Vapor phase epitaxial growth method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0732130B2 (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS49121478A (en) * | 1973-03-19 | 1974-11-20 | ||
| JPS5799725A (en) * | 1980-12-12 | 1982-06-21 | Seiko Epson Corp | Manufacture of amorphous semiconductor film |
| JPS5887818A (en) * | 1981-11-19 | 1983-05-25 | Mitsubishi Electric Corp | Thin film forming method |
| JPS5895550A (en) * | 1982-11-01 | 1983-06-07 | Shunpei Yamazaki | Device for forming non-single crystal semiconductor layer |
| JPS58128142A (en) * | 1982-01-25 | 1983-07-30 | Hitachi Ltd | Sealing method of driving section of reaction furnace |
| JPS60213021A (en) * | 1984-04-07 | 1985-10-25 | Konishiroku Photo Ind Co Ltd | Formation of amorphous film |
-
1986
- 1986-05-29 JP JP61125251A patent/JPH0732130B2/en not_active Expired - Lifetime
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS49121478A (en) * | 1973-03-19 | 1974-11-20 | ||
| JPS5799725A (en) * | 1980-12-12 | 1982-06-21 | Seiko Epson Corp | Manufacture of amorphous semiconductor film |
| JPS5887818A (en) * | 1981-11-19 | 1983-05-25 | Mitsubishi Electric Corp | Thin film forming method |
| JPS58128142A (en) * | 1982-01-25 | 1983-07-30 | Hitachi Ltd | Sealing method of driving section of reaction furnace |
| JPS5895550A (en) * | 1982-11-01 | 1983-06-07 | Shunpei Yamazaki | Device for forming non-single crystal semiconductor layer |
| JPS60213021A (en) * | 1984-04-07 | 1985-10-25 | Konishiroku Photo Ind Co Ltd | Formation of amorphous film |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0732130B2 (en) | 1995-04-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4368098A (en) | Epitaxial composite and method of making | |
| US4404265A (en) | Epitaxial composite and method of making | |
| US8524582B2 (en) | Silicon-germanium hydrides and methods for making and using same | |
| Cowley et al. | The single-source precursor concept. A case study of gallium arsenide | |
| US20130032857A1 (en) | Silicon-Germanium Hydrides and Methods for Making and Using Same | |
| US5593497A (en) | Method for forming a deposited film | |
| US3941647A (en) | Method of producing epitaxially semiconductor layers | |
| JPS63224225A (en) | Substrate of thin film single crystal diamond | |
| JPS62281338A (en) | Vapor phase epitaxy method | |
| JPH01252776A (en) | Formation of aluminum film by vapor growth | |
| JPH01144617A (en) | Method of continuous growth of super-lattice structure of distortion layer | |
| JPH02185026A (en) | Selective forming method of al thin-film | |
| Olivares et al. | Effect of Deposition Parameters on the Characteristics of Low-Pressure Chemical Vapor Deposited SiGe Films Grown from Si2 H 6 and GeH4 | |
| EP0240314B1 (en) | Method for forming deposited film | |
| JPH03215390A (en) | Method for epitaxial growth and doping of compound crystal | |
| EP0240305B1 (en) | Method for forming a deposited film | |
| US4238252A (en) | Process for growing indium phosphide of controlled purity | |
| EP0285834B1 (en) | Allyltellurides and their use in the mocvd growth of group ii-vi epitaxial films | |
| Fan et al. | Growth of atomically flat homoepitaxial magnesium oxide thin films by metal-organic chemical vapor deposition | |
| WO2001020687A1 (en) | New methods of fabricating devices and semiconductor layers comprising cadmium mercury telluride, mercury telluride, and cadmium telluride | |
| JPS6369220A (en) | Manufacture of group iv semiconductor thin film | |
| JPH01313927A (en) | Compound-semiconductor crystal growth method | |
| JPH0547668A (en) | Crystal growth method for compound semiconductor | |
| Bloem | Gas phase diffusion and surface reactions in the chemical vapour deposition of silicon | |
| Chizmeshya et al. | Nano-synthesis approach to the fabrication of monocrystalline silicon-like (III-V) yIV5-2y semiconductors |